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    • 1. 发明授权
    • Multi-step flow cleaning method and multi-step flow cleaning apparatus
    • 多步流动清洗方法和多步流动清洗装置
    • US06432218B1
    • 2002-08-13
    • US09402877
    • 1999-12-07
    • Masatoshi HirokawaHaruki SonodaYusuke AbeTetsuji OishiMasashi OmoriHiroshi Tanaka
    • Masatoshi HirokawaHaruki SonodaYusuke AbeTetsuji OishiMasashi OmoriHiroshi Tanaka
    • B08B310
    • B08B3/10Y10S134/902
    • A multi-step flow cleaning method and a multi-step flow cleaning apparatus are provided which effectively clean workpieces with a stream of a cleaning solution and to suppress an increase of foreign matters adhering to the surfaces of the workpieces. A cleaning tank 10 for holding workpieces is provided, a supply line 14 for supplying a cleaning solution such as pure water from the bottom surface of the cleaning tank is provided, and a valve 12 for adjusting the flow of the cleaning solution is disposed in the middle of the supply line 14. The valve 12 is equipped with a switching section 12a for controlling the outflow of the cleaning solution by opening or closing the supply line 14, and a bypass 12b for supplying the cleaning solution, bypassing the switching section 12a. The valve 12 is provided such that it is able to adjust in two steps the supply flow of the cleaning solution supplied to the cleaning tank 10 by using the supply flow fed through the bypass 12b and the supply flow fed through the switching section 12a.
    • 提供了一种多级流动清洗方法和多级流动清洁装置,其用清洁液流清洁工件,并且抑制附着在工件表面上的异物的增加。 设置有用于保持工件的清洁槽10,用于从清洗槽的底面供给纯净水等清洗液的供给管路14,将清洗液的流量调整用阀12配置在 阀12配备有用于通过打开或关闭供应管线14来控制清洗溶液的流出的切换部分12a和绕过切换部分12a的清洁溶液供给的旁路12b。 阀12设置成使得能够通过使用通过旁路12b供给的供给流和通过切换部12a供给的供给流,分两步调整供给到清洗槽10的清洗溶液的供给流。
    • 8. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US09070549B2
    • 2015-06-30
    • US12680799
    • 2008-09-22
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • B08B5/02H01L21/02H01L21/67
    • H01L21/02052H01L21/67028
    • A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.
    • 在将晶片浸入清洗槽中的清洗液体的状态下,将干燥气体从大致水平方向或垂直向下方向向大致水平方向,倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中,其中干燥气体被供应到干燥室中。 此时,在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下,将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后,干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。