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1. 发明授权

US6121205A Bulk superconductor and process of preparing same 失效
标题翻译：散装超导体及其制备方法
公开(公告)号：US6121205A
公开(公告)日：2000-09-19
申请号：US855497
申请日：1997-05-13
申请人： Masato Murakami , Kazuhiko Sawada , Naomichi Sakai , Takamitsu Higuchi
发明人： Masato Murakami , Kazuhiko Sawada , Naomichi Sakai , Takamitsu Higuchi
IPC分类号： C04B35/45 , C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/02 , H01L39/14 , H01L39/24
CPC分类号： H01L39/2419 , H01L39/02 , H01L39/143 , Y10S428/93 , Y10S505/701 , Y10S505/925 , Y10S505/926
摘要： A bulk superconductor including a plurality of units each composed of a substrate and a superconductive layer of R--Ba--Cu--O, where R is selected from La, Nd, Sm, Eu, Gd, Y, Dy, Ho, Er, Tm, Yb and mixtures thereof, formed on the substrate. The units are arranged in a row or in a matrix such that the superconductive layers of respective units are superconductively joined with each other.
摘要翻译：一种体积超导体，其包括多个单元，每个单元由基板和R-Ba-Cu-O的超导层组成，其中R选自La，Nd，Sm，Eu，Gd，Y，Dy，Ho，Er，Tm ，Yb及其混合物。这些单元排列成一排或者矩阵，使得各单元的超导层彼此超导结合。

2. 发明授权

US5525584A Superconductor and method of producing same 失效
标题翻译：超导体及其制造方法
公开(公告)号：US5525584A
公开(公告)日：1996-06-11
申请号：US452138
申请日：1995-05-26
申请人： Masato Murakami , Sang-Im Yoo , Naomichi Sakai , Hiroshi Takaichi , Takamitsu Higuchi , Shoji Tanaka
发明人： Masato Murakami , Sang-Im Yoo , Naomichi Sakai , Hiroshi Takaichi , Takamitsu Higuchi , Shoji Tanaka
IPC分类号： H01L39/12 , H01B12/00
CPC分类号： H01L39/126 , Y10S505/742 , Y10S505/778 , Y10S505/779 , Y10S505/785
摘要： A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I):(R.sup.1.sub.1-x,Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I)wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.
摘要翻译：公开了一种高临界温度和高临界电流密度超导体，其包含由下式（I）表示的金属氧化物：（R11-x，Bax）Ba2Cu3Od（I）其中R1代表选自以下的至少一种元素：的La，Nd，Sm，Eu和Gd，x是大于0但不大于0.5的数，d是6.2和7.2之间的数。 RE211，RE422和/或由式（R21-z，Baz）（Ba1-y，R2y）2Cu3Op（R2 = La，Nd，Sm，Eu或Gd）表示的金属氧化物的细相可以分散在基质的式（I）的基质相。上述超导体可以通过在5℃/小时以下的冷却速度下，在温度为1000〜-1300℃的温度下冷却含有R 1，Ba，Cu和O的熔体，在0.00001和0.05atm之间，然后在氧气氛中在250-600℃退火。

3. 发明授权

US5849667A Superconductor and method of producing same 失效
标题翻译：超导体及其制造方法
公开(公告)号：US5849667A
公开(公告)日：1998-12-15
申请号：US683915
申请日：1996-07-19
申请人： Masato Murakami , Sang-Im Yoo , Naomichi Sakai , Hiroshi Takaichi , Takamitsu Higuchi , Shoji Tanaka
发明人： Masato Murakami , Sang-Im Yoo , Naomichi Sakai , Hiroshi Takaichi , Takamitsu Higuchi , Shoji Tanaka
IPC分类号： H01L39/12 , H01B12/00 , C04B35/50
CPC分类号： H01L39/126 , Y10S505/742 , Y10S505/778 , Y10S505/779 , Y10S505/785
摘要： A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I): (R.sup.1.sub.1-x, Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I) wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.
摘要翻译：公开了一种高临界温度和高临界电流密度超导体，其包含由下式（I）表示的金属氧化物:( R11-x，Bax）Ba2Cu3Od（I）其中R1表示选自以下的至少一种元素：的La，Nd，Sm，Eu和Gd，x是大于0但不大于0.5的数，d是6.2和7.2之间的数。 RE211，RE422和/或由式（R21-z，Baz）（Ba1-y，R2y）2Cu3Op（R2 = La，Nd，Sm，Eu或Gd）表示的金属氧化物的细相可以分散在基质的式（I）的基质相。上述超导体可以通过在5℃/小时以下的冷却速度下，在温度为1000〜-1300℃的温度下冷却含有R 1，Ba，Cu和O的熔体，在0.00001和0.05atm之间，然后在氧气氛中在250-600℃退火。

4. 发明授权

US07950282B2 Acceleration sensor incorporating a piezoelectric device 有权
标题翻译：具有压电元件的加速度传感器
公开(公告)号：US07950282B2
公开(公告)日：2011-05-31
申请号：US12053011
申请日：2008-03-21
申请人： Takamitsu Higuchi , Yasuhiro Ono
发明人： Takamitsu Higuchi , Yasuhiro Ono
IPC分类号： G01P15/09
CPC分类号： G01P15/097 , G01P15/0802
摘要： An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer and having a base section affixed to the vibration section forming layer and two beam sections extending from the base section, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on each of the beam sections; the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency; and the detection circuit detects a change in the frequency of vibrations of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the beam sections extend, and outputs a signal corresponding to the acceleration based on the change in the frequency.
摘要翻译：加速度传感器包括：压电振动装置; 振荡电路; 以及检测电路，其中所述压电振动装置包括基板，形成在所述基板上的绝缘层，形成在所述绝缘层上方的振动部分形成层，在穿过所述振动的第一开口部中以悬臂形状形成的振动部分截面形成层，并且具有固定在振动部分形成层上的基部和从基部延伸的两个梁部，穿过绝缘层并形成在第一开口部和振动部下方的第二开口部，以及压电元件每个梁段上形成的截面; 振荡电路以共振频率振动压电振动装置; 并且检测电路检测由沿光束部分延伸的方向施加的加速度引起的压电振动装置的振动频率的变化，并且基于频率的变化输出与加速度相对应的信号。

5. 发明申请

US20100013894A1 PIEZOELECTRIC LAMINATE, SURFACE ACOUSTIC WAVE DEVICE, THIN-FILM PIEZOELECTRIC RESONATOR, AND PIEZOELECTRIC ACTUATOR 审中-公开
标题翻译：压电层压板，表面声波装置，薄膜压电谐振器和压电致动器
公开(公告)号：US20100013894A1
公开(公告)日：2010-01-21
申请号：US12556232
申请日：2009-09-09
申请人： Mayumi Ueno , Takamitsu Higuchi , Takeshi Kijima
发明人： Mayumi Ueno , Takamitsu Higuchi , Takeshi Kijima
IPC分类号： B41J2/045
CPC分类号： H01L41/18 , B41J2/14201 , H01L41/0815 , H01L41/1873 , H01L41/318 , H03H9/02031 , H03H9/02574
摘要： A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1
摘要翻译：一种压电层压板，包括在基底上形成的底部和第一压电层，并包括铌酸钾钠。第一压电层由组成式（KaNa1-a）xNbO3表示，组成式中的“a”和“x”分别为0.1

6. 发明授权

US07596840B2 Method for manufacturing piezoelectric thin film resonator 失效
标题翻译：制造压电薄膜谐振器的方法
公开(公告)号：US07596840B2
公开(公告)日：2009-10-06
申请号：US11190038
申请日：2005-07-26
申请人： Setsuya Iwashita , Takamitsu Higuchi
发明人： Setsuya Iwashita , Takamitsu Higuchi
IPC分类号： H04R17/10 , B44C1/165
CPC分类号： H01L41/319 , H03H3/02 , H03H9/02031 , H03H9/0542 , H03H9/173 , Y10T29/42 , Y10T29/435 , Y10T29/49128 , Y10T29/49156
摘要： To provide a method for manufacturing a piezoelectric thin film resonator with excellent characteristics. A method for manufacturing a piezoelectric thin film resonator in accordance with the present invention includes a step of forming a laminated body by successively laminating, above a first substrate, a piezoelectric thin film and a first electrode, a step of bonding a second substrate and the laminated body, a step of separating the first substrate from the laminated body, a step of forming a second electrode above the piezoelectric thin film, and a step of patterning the second electrode, the piezoelectric thin film and the first electrode.
摘要翻译：提供一种制造具有优异特性的压电薄膜谐振器的方法。根据本发明的压电薄膜谐振器的制造方法包括：通过在第一基板上方依次层叠形成压电薄膜和第一电极而形成层压体的步骤，接合第二基板和层压体，从层叠体分离第一基板的步骤，在压电薄膜的上方形成第二电极的工序，以及对第二电极，压电薄膜和第一电极进行图案化的工序。

7. 发明授权

US07310862B2 Method for manufacturing a piezoelectric device 有权
标题翻译：制造压电元件的方法
公开(公告)号：US07310862B2
公开(公告)日：2007-12-25
申请号：US11000517
申请日：2004-11-30
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： H01L41/22
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1634 , B41J2/1642 , B41J2/1645 , B41J2/1646 , C23C14/08 , C23C14/28 , H01L41/1876 , H01L41/316 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49007
摘要： A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer which partially has a layer formed by an ion beam assisted laser ablation method while controlling a temperature rise accompanied by an ion beam irradiation by a cooling device and is bi-axially oriented as a whole, is formed on a surface of a substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.
摘要翻译：提供了一种有效地制造具有在期望方向上排列的晶体取向的压电薄膜的压电装置的方法。在衬底的表面上形成部分地具有通过离子束辅助激光烧蚀法形成的层的中间层，同时控制伴随着冷却装置的离子束照射并且作为整体的双轴取向的温度升高。在中间层上形成下电极。在下电极上形成压电薄膜。在压电膜上形成上电极。下电极和压电膜通过外延生长形成。

8. 发明授权

US07258742B2 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus 有权
标题翻译：铌酸钾单晶薄膜，表面声波元件，频率滤波器，频率振荡器，电子电路和电子设备的制造方法
公开(公告)号：US07258742B2
公开(公告)日：2007-08-21
申请号：US10916208
申请日：2004-08-11
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： C30B25/02
CPC分类号： H03H9/02543 , C30B19/00 , C30B19/12 , C30B29/30 , H03H3/08 , H03H9/02574 , H03H9/0542
摘要： A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and electronic device employ the thin film manufactured by the method, and have high k2, and are wideband, reduced in size and economical in power consumption. A plasma plume containing K, Nb, and O in the range 0.5≦x≦xE is supplied to a substrate, where x is a mole ratio of niobium (Nb) to potassium (K) in KxNb1−xOy, and xE is a mole composition ratio at the eutectic point for KNbO3 and 3K2O.Nb2O5 under a predetermined oxygen partial pressure. Maintaining the temperature Ts of the substrate in the range TE≦Ts≦Tm where TE represents the temperature at the eutectic point and Tm represents a complete melting temperature, the KNbO3 single crystal is precipitated from the KxNb1−xOy deposited on the substrate.
摘要翻译：在单晶基板上制造具有单相高质量和优异形态的KNbO 3 单晶薄膜的方法。表面声波元件，频率滤波器，频率振荡器，电子电路和电子器件采用该方法制造的薄膜，并且具有高k 2，并且是宽带的，尺寸减小且经济能量消耗。将含有0.5 <= X <= X 的K，Nb和O的等离子体羽流供给到基底，其中x是铌（Nb）与钾（K）的摩尔比，在N x Nb 1-x O y y中，x E是在共晶点处的摩尔组成比在预定的氧分压下的KNbO 3 3和3K 2 O 2 N 2 O 5 O 3。保持基板的温度T 在范围T T E表示共晶点处的温度，T≠表示完全熔融温度，KNbO 3单晶从K铌Nb析出沉积在衬底上的1-x O 2 O 3。

9. 发明授权

US07244016B2 Ink jet head and its manufacturing method, and ink jet printer 失效
标题翻译：喷墨头及其制造方法，以及喷墨打印机
公开(公告)号：US07244016B2
公开(公告)日：2007-07-17
申请号：US11002964
申请日：2004-12-02
申请人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa , Satoshi Nebashi
发明人： Setsuya Iwashita , Takamitsu Higuchi , Hiromu Miyazawa , Satoshi Nebashi
IPC分类号： B41J2/045
CPC分类号： B41J2/14233
摘要： An ink jet head is provided that can effectively suppress operational interferences among adjacent cavities, and is capable of ultra-high-density and high-speed printing. The ink jet head is equipped with a plurality of cavities each having a volume that is variable by a deformation operation of a piezoelectric element, wherein beam members are provided between inner walls that interpose the cavity.
摘要翻译：提供了可以有效地抑制相邻空腔之间的操作干扰的喷墨头，并且能够进行超高密度和高速打印。喷墨头配备有多个空腔，每个空腔具有通过压电元件的变形操作而变化的体积，其中梁构件设置在插入空腔的内壁之间。

10. 发明申请

US20070045109A1 Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device 失效
标题翻译：绝缘靶材料，绝缘材料的制造方法，绝缘复合氧化物膜及器件
公开(公告)号：US20070045109A1
公开(公告)日：2007-03-01
申请号：US11511663
申请日：2006-08-29
申请人： Takeshi Kijima , Takamitsu Higuchi
发明人： Takeshi Kijima , Takamitsu Higuchi
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C04B35/493 , C04B35/497 , C04B35/6264 , C04B35/6325 , C04B35/6346 , C04B2235/3234 , C04B2235/3239 , C04B2235/3248 , C04B2235/3251 , C04B2235/3255 , C04B2235/3258 , C04B2235/3287 , C04B2235/3418 , C04B2235/3427 , C04B2235/441 , C04B2235/449 , C04B2235/768 , C23C14/088 , H01L21/31691 , H01L41/0805 , H01L41/1876 , H01L41/316
摘要： An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.
摘要翻译：一种用于获得由通式AB 1-X C X O 3 3表示的绝缘复合氧化物膜的绝缘靶材料，包括至少Pb，包含Zr，Ti，V，W和Hf中的至少一种的元素B和包含Nb和Ta中的至少一种的元素C.

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