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    • 3. 发明申请
    • METHOD OF REUSABLY SEPARATING TWO ADHERED PLATES AND APPARATUS USED FOR THE METHOD
    • 重新分离两个粘合板的方法和用于该方法的装置
    • US20130025777A1
    • 2013-01-31
    • US13560575
    • 2012-07-27
    • Masato FUJITAAkira HIRAO
    • Masato FUJITAAkira HIRAO
    • B32B38/10C08L75/16B32B37/12
    • C09J5/00B32B43/006B32B2457/20C09J2203/318C09J2205/302C09J2483/00Y10T156/1702
    • Provided is a method of reusably separating two adhered plates, including step 1 for firmly adhering two plates adhered to each other via a pressure-sensitive adhesive sheet or a curable resin layer to a first jig and a second jig, respectively, step 2 for detaching the two plates by moving at least one of the first jig and the second jig to produce a shear stress causing breakage of the pressure-sensitive adhesive sheet or the curable resin layer, and step 3 for removing the two plates after detachment from the jigs, wherein, in the aforementioned step 1, one or both of the plates is(are) firmly adhered to the jig(s) via a silicone pressure-sensitive adhesive sheet or porous pressure-sensitive is adhesive sheet. Using the method, two plates adhered to each other via a pressure-sensitive adhesive sheet or a curable resin layer can be stably and reusably detached by certainly fixing them by using jig fixtures.
    • 提供了一种可重复分离两个粘合板的方法,包括步骤1,用于通过压敏粘合片或固化树脂层将彼此粘附的两个板牢固地粘合到第一夹具和第二夹具上,步骤2用于分离 所述两个板通过移动所述第一夹具和所述第二夹具中的至少一个而产生导致所述压敏粘合片或所述可固化树脂层破裂的剪切应力;以及步骤3,用于在从所述夹具脱离之后去除所述两个板, 其中,在上述步骤1中,通过硅氧烷压敏粘合片或多孔压敏粘合片将一个或两个板牢固地粘合到夹具上。 使用该方法,可以通过使用夹具固定装置固定它们,通过压敏粘合片或可固化树脂层彼此粘合的两块板可以稳定地且可重复地分离。
    • 4. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20090156014A1
    • 2009-06-18
    • US12368800
    • 2009-02-10
    • Toshihisa KORETSUNEMasato FUJITA
    • Toshihisa KORETSUNEMasato FUJITA
    • H01L21/302
    • H01L21/32139H01L21/0334Y10S438/942
    • A method for manufacturing a semiconductor device of the present invention includes: forming a first film, a second film and a third film in sequence on a silicon substrate; patterning a resist film formed on the third film by conducting an exposure and developing process for the resist film employing an exposure mask including a phase shifter; selectively dry-etching the third film through a mask of the resist film employing the second film as an etch stop to process the third film into a first pattern; further dry-etching the third film employing the second film as an etch stop to partially remove the third film, thereby processing the third film into a second pattern; patterning the second film employing the third film having the second pattern as a mask; and patterning the first film employing the patterned second film as a mask.
    • 本发明的半导体器件的制造方法包括:在硅衬底上依次形成第一膜,第二膜和第三膜; 通过使用包括移相器的曝光掩模对抗蚀剂膜进行曝光和显影处理来对形成在第三膜上的抗蚀剂膜图案化; 通过使用第二膜的抗蚀剂膜的掩模来选择性地干蚀刻第三膜作为蚀刻停止,以将第三膜处理成第一图案; 使用第二膜进一步干蚀刻第三膜作为蚀刻停止部分地去除第三膜,从而将第三膜处理成第二图案; 使用具有第二图案的第三膜作为掩模来图案化第二膜; 以及使用图案化的第二膜作为掩模对第一膜进行构图。