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1. 发明申请

US20090156014A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20090156014A1
公开(公告)日：2009-06-18
申请号：US12368800
申请日：2009-02-10
申请人： Toshihisa KORETSUNE , Masato FUJITA
发明人： Toshihisa KORETSUNE , Masato FUJITA
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0334 , Y10S438/942
摘要： A method for manufacturing a semiconductor device of the present invention includes: forming a first film, a second film and a third film in sequence on a silicon substrate; patterning a resist film formed on the third film by conducting an exposure and developing process for the resist film employing an exposure mask including a phase shifter; selectively dry-etching the third film through a mask of the resist film employing the second film as an etch stop to process the third film into a first pattern; further dry-etching the third film employing the second film as an etch stop to partially remove the third film, thereby processing the third film into a second pattern; patterning the second film employing the third film having the second pattern as a mask; and patterning the first film employing the patterned second film as a mask.
摘要翻译：本发明的半导体器件的制造方法包括：在硅衬底上依次形成第一膜，第二膜和第三膜; 通过使用包括移相器的曝光掩模对抗蚀剂膜进行曝光和显影处理来对形成在第三膜上的抗蚀剂膜图案化; 通过使用第二膜的抗蚀剂膜的掩模来选择性地干蚀刻第三膜作为蚀刻停止，以将第三膜处理成第一图案; 使用第二膜进一步干蚀刻第三膜作为蚀刻停止部分地去除第三膜，从而将第三膜处理成第二图案; 使用具有第二图案的第三膜作为掩模来图案化第二膜; 以及使用图案化的第二膜作为掩模对第一膜进行构图。

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