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    • 10. 发明授权
    • Method for producing liquid discharge head
    • 液体排出头的制造方法
    • US06875365B2
    • 2005-04-05
    • US10145202
    • 2002-05-15
    • Hidenori WatanabeYukihiro Hayakawa
    • Hidenori WatanabeYukihiro Hayakawa
    • B41J2/16C23F1/00C23F1/40H01L21/306
    • B41J2/1628B41J2/1603B41J2/1629B41J2/1642
    • A method for producing a liquid discharge head provided with a discharge port for discharging liquid, a liquid flow path communicating with the discharge port, and a silicon substrate including a discharge energy generating element for generating energy for liquid discharge and a liquid supply aperture for supplying the liquid flow path with the liquid, the method comprising following steps of: forming an anisotropic etching stop layer in a portion wherein the liquid supply apertures is to be formed on the top side of the substrate; forming an insulation layer on the anisotropic etching stop layer; destructing the crystalline structure under the etching stop layer in the liquid supply aperture forming portion utilizing the insulation layer as a mask, forming, on the rear side of the substrate, an etching mask layer having an aperture corresponding to the liquid supply aperture forming portion on the top side, etching the substrate by anisotropic etching from the aperture until the area where the crystalline structure is destructed is exposed; further etching the area where the crystalline structure is destructed from the portion exposed by the anisotropic etching step thereby exposing the anisotropic etching stop layer; and eliminating the exposed anisotropic etching stop layer.
    • 一种液体排出头的制造方法,其具备排出液体的排出口,与排出口连通的液体流路,以及包括用于产生液体排出能量的排出能量产生元件的硅基板和供给液体供给孔 所述液体流路与所述液体接触,所述方法包括以下步骤:在要在所述基板的顶侧上形成所述液体供应孔的部分中形成各向异性蚀刻停止层; 在各向异性蚀刻停止层上形成绝缘层; 利用绝缘层作为掩模,破坏在液体供给孔形成部分中的蚀刻停止层下面的晶体结构,在衬底的背面形成具有对应于液体供应孔形成部分的孔的蚀刻掩模层 顶部通过各向异性蚀刻从孔直到晶体结构被破坏的区域被暴露来蚀刻衬底; 进一步蚀刻由各向异性蚀刻步骤暴露的部分破坏晶体结构的区域,从而暴露各向异性蚀刻停止层; 并消除暴露的各向异性蚀刻停止层。