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    • 2. 发明授权
    • Antenna apparatus, method of manufacturing same and method of designing
same
    • 天线装置及其制造方法及其设计方法
    • US5798734A
    • 1998-08-25
    • US708225
    • 1996-09-06
    • Masataka OhtsukaYoji IsotaMakoto MatsunagaYoshihiko KonishiShintaro Nakahara
    • Masataka OhtsukaYoji IsotaMakoto MatsunagaYoshihiko KonishiShintaro Nakahara
    • H01Q3/26H01Q9/04H01Q13/08H01Q13/18H01Q21/00H01Q1/38
    • H01Q9/0407H01Q9/0414
    • An antenna apparatus, a method of manufacturing the same, and a method of designing the same, are provided. A first dielectric layer, first dielectric film, second dielectric layer and second dielectric film are laminated on a flat metal plate in the mentioned order. A radiation element fed through a feeding line is arranged below another radiation element that is not fed through the feeding line. The feeding line forms, along its overall length, a microstrip line having the dielectric layer sandwiched by the feeding line and the flat conductive plate, resulting in no model change from the microstrip line to a triplate line or vice versa, with reduced feeding loss. The thickness of the dielectric layer is so set as to be sufficiently small compared with the used wavelength, to thereby suppress the radiation from discontinuities lying on the microstrip line constituted of the feeding line and flat conductive plate. This eliminates the need for a metal shield plate to prevent unnecessary radiation from the feeding line.
    • 提供了一种天线装置及其制造方法及其设计方法。 第一电介质层,第一电介质膜,第二电介质层和第二电介质膜按照上述顺序层叠在平坦的金属板上。 通过馈电线馈送的辐射元件布置在不通过馈电线馈送的另一辐射元件下方。 馈电线沿着其整个长度形成具有被馈电线和平板导电板夹持的电介质层的微带线,导致没有模型从微带线变为三板线,反之亦然,具有减少的馈电损耗。 电介质层的厚度与使用波长相比设定得足够小,从而抑制位于由馈电线和平板导电板构成的微带线上的不连续的辐射。 这消除了对金属屏蔽板的需要,以防止来自馈线的不必要的辐射。
    • 3. 发明授权
    • Antenna apparatus
    • 天线装置
    • US5926136A
    • 1999-07-20
    • US852599
    • 1997-05-07
    • Masataka OhtsukaYoshihiko KonishiMakoto MatsunagaShintaro Nakahara
    • Masataka OhtsukaYoshihiko KonishiMakoto MatsunagaShintaro Nakahara
    • H01Q15/08H01Q1/32H01Q3/01H01Q3/02H01Q9/04H01Q13/08
    • H01Q9/0407H01Q3/02H01Q9/0414
    • In an antenna apparatus in which n dielectric layers with .epsilon..sub.r1 -.epsilon..sub.rn in dielectric constants are respectively stacked between a ground plate and a major radiating conductor, the thickness t.sub.1 -t.sub.n of the dielectric layers are determined so as to satisfy substantially the following equations:(t.sub.1 +t.sub.2 + . . . +t.sub.n)/(t.sub.1 /.epsilon..sub.r1 +t.sub.2 /.epsilon..sub.r2 + . . . +t.sub.n /.epsilon..sub.rn)=.epsilon..sub.reff, andt.sub.1 +t.sub.2 + . . . t.sub.n =t.sub.minwith respect to a dielectric constant .epsilon..sub.reff of the antenna defined for a desired beam width, and the minimum value t.sub.min of the dielectric layers capable of ensuring a desired operation band and low reflection losses in this dielectric constant .epsilon..sub.reff. Thus, the thinnest antenna structure which can ensure a desired radiation in directions of low elevation angles, and desired operation bands and low reflection losses can be made.
    • 在其中介电常数中的ε1〜ε1的n个电介质层分别层叠在接地板和主辐射导体之间的天线装置中,电介质层的厚度t1-tn被确定为基本上满足以下等式 :(t1 + t2 + ... + tn)/(t1 / epsilon r1 + t2 / epsilon r2 + ... + tn / epsilon rn)=εreff和t1 + t2 +。 。 。 相对于为期望波束宽度定义的天线的介电常数εreff,以及能够确保期望的操作频带的介电层的最小值tmin和在该介电常数εref中的低反射损耗,tn = tmin。 因此,可以制造能够确保在低仰角方向上期望的辐射以及期望的操作带和低反射损耗的最薄的天线结构。
    • 10. 发明授权
    • Microwave semiconductor switch
    • 微波半导体开关
    • US4789846A
    • 1988-12-06
    • US45627
    • 1987-05-01
    • Makoto MatsunagaYoshitada IyamaFumio Takeda
    • Makoto MatsunagaYoshitada IyamaFumio Takeda
    • H01P1/15H03K17/693
    • H03K17/693H01P1/15
    • A microwave semiconductor switch wherein first and second field effect transistors and first, second and third input/output microstrip lines are integrally formed on a semiconductor substrate. The first field effect transistor is connected in series between the second input/output line and a junction point of the first, second and third input/output lines at a position adjacent to the junction point. The second field effect transistor is connected at a second position spaced approximately a quarter of the wavelength from the junction point between the second position and the ground. The drain electrodes and source electrodes of the first and second transistors are placed at the same potential. The transmission paths for microwaves are switched by varying a bias voltage applied to the gate electrodes of the field effect transistors.
    • 一种微波半导体开关,其中第一和第二场效应晶体管以及第一,第二和第三输入/输出微带线一体形成在半导体衬底上。 第一场效应晶体管串联连接在第二输入/输出线与第一,第二和第三输入/输出线的连接点相邻的位置。 第二场效应晶体管在距离第二位置和地之间的接合点间隔大约四分之一波长的第二位置连接。 第一和第二晶体管的漏电极和源极被放置在相同的电位。 通过改变施加到场效应晶体管的栅电极的偏置电压来切换微波的传输路径。