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1. 发明授权

US4789846A Microwave semiconductor switch 失效
标题翻译：微波半导体开关
公开(公告)号：US4789846A
公开(公告)日：1988-12-06
申请号：US45627
申请日：1987-05-01
申请人： Makoto Matsunaga , Yoshitada Iyama , Fumio Takeda
发明人： Makoto Matsunaga , Yoshitada Iyama , Fumio Takeda
IPC分类号： H01P1/15 , H03K17/693
CPC分类号： H03K17/693 , H01P1/15
摘要： A microwave semiconductor switch wherein first and second field effect transistors and first, second and third input/output microstrip lines are integrally formed on a semiconductor substrate. The first field effect transistor is connected in series between the second input/output line and a junction point of the first, second and third input/output lines at a position adjacent to the junction point. The second field effect transistor is connected at a second position spaced approximately a quarter of the wavelength from the junction point between the second position and the ground. The drain electrodes and source electrodes of the first and second transistors are placed at the same potential. The transmission paths for microwaves are switched by varying a bias voltage applied to the gate electrodes of the field effect transistors.
摘要翻译：一种微波半导体开关，其中第一和第二场效应晶体管以及第一，第二和第三输入/输出微带线一体形成在半导体衬底上。第一场效应晶体管串联连接在第二输入/输出线与第一，第二和第三输入/输出线的连接点相邻的位置。第二场效应晶体管在距离第二位置和地之间的接合点间隔大约四分之一波长的第二位置连接。第一和第二晶体管的漏电极和源极被放置在相同的电位。通过改变施加到场效应晶体管的栅电极的偏置电压来切换微波的传输路径。

2. 发明授权

US06201441B1 Semiconductor circuit 失效
标题翻译：半导体电路
公开(公告)号：US06201441B1
公开(公告)日：2001-03-13
申请号：US09423518
申请日：1999-11-10
申请人： Noriharu Suematsu , Shigeru Sugiyama , Kensuke Nakajima , Yoshitada Iyama , Fumimasa Kitabayashi
发明人： Noriharu Suematsu , Shigeru Sugiyama , Kensuke Nakajima , Yoshitada Iyama , Fumimasa Kitabayashi
IPC分类号： H03F114
CPC分类号： H03F3/72 , H03F3/19 , H03F2203/7239 , H03G1/0088
摘要： An operational command signal is output to one of an amplifier or a variable damper depending on the signal level of a high frequency signal.
摘要翻译：操作指令信号根据高频信号的信号电平输出到放大器或可变阻尼器中的一个。

3. 发明授权

US6094108A Unbalance-to-balance converter utilizing a transistor 失效
标题翻译：利用晶体管的不平衡平衡转换器
公开(公告)号：US6094108A
公开(公告)日：2000-07-25
申请号：US153329
申请日：1998-09-15
申请人： Noriharu Suematsu , Shigeru Sugiyama , Masayoshi Ono , Yoshitada Iyama , Fumimasa Kitabayashi
发明人： Noriharu Suematsu , Shigeru Sugiyama , Masayoshi Ono , Yoshitada Iyama , Fumimasa Kitabayashi
IPC分类号： H03D7/14 , H03H11/32
CPC分类号： H03H11/32
摘要： An unbalance-to-balance converter includes an FET and a balanced output adjusting capacitor connected between the source terminal of the FET and an earth conductor. The balanced output adjusting capacitor has a capacitance value equal to a capacitance difference Cpd-Cps between a drain side parasitic capacitance Cpd and a source side parasitic capacitance Cps. This makes it possible to solve a problem involved in a conventional unbalance-to-balance converter in that when the drain side parasitic capacitance Cpd differs from the source side parasitic capacitance Cps, a pair of balanced signals output from the drain terminal and source terminal do not have the same amplitude and are not in complete opposition.
摘要翻译：不平衡平衡转换器包括FET和连接在FET的源极端子与接地导体之间的平衡输出调整电容器。平衡输出调整电容器的电容值等于漏极侧寄生电容Cpd与源极侧寄生电容Cps之间的电容差Cpd-Cps。这使得可以解决传统的不平衡转换器中涉及的问题，因为当漏极侧寄生电容Cpd与源极侧寄生电容Cps不同时，从漏极端子和源极端子输出的一对平衡信号没有相同的幅度，并没有完全相反。

4. 发明授权

US6044255A Radio frequency circuit with integrated elements and method of manufacture 失效
标题翻译：具有集成元件和制造方法的射频电路
公开(公告)号：US6044255A
公开(公告)日：2000-03-28
申请号：US939968
申请日：1997-09-29
申请人： Noriharu Suematsu , Masayoshi Ono , Tadashi Kawahara , Mikio Uesugi , Kenji Hiroshige , Yoshitada Iyama
发明人： Noriharu Suematsu , Masayoshi Ono , Tadashi Kawahara , Mikio Uesugi , Kenji Hiroshige , Yoshitada Iyama
IPC分类号： H03F3/19 , H04B1/28
CPC分类号： H04B1/28
摘要： A radio frequency circuit is disclosed which includes a low-noise amplifier and a mixer integrated on the same semiconductor chip by using a silicon BiCMOS process. The low-noise amplifier has a silicon bipolar junction transistor and the mixer has a silicon MOS type field effect transistor. In the radio frequency circuit, the mixer can include two silicon MOS type field effect transistors one of which has a source connected to a drain of the other silicon MOS type field effect transistor and a gate of one silicon MOS type field effect transistor is supplied with a local signal and a gate of the other silicon MOS type field effect transistor is supplied with a radio frequency signal amplified by the low-noise amplifier.
摘要翻译：公开了一种射频电路，其包括通过使用硅BiCMOS工艺在同一半导体芯片上集成的低噪声放大器和混频器。低噪声放大器具有硅双极结型晶体管，混频器具有硅MOS型场效应晶体管。在射频电路中，混频器可以包括两个硅MOS型场效应晶体管，其中一个源极连接到另一个硅MOS型场效应晶体管的漏极，并且一个硅MOS型场效应晶体管的栅极被提供另一硅MOS型场效应晶体管的本地信号和栅极被提供有由低噪声放大器放大的射频信号。

5. 发明授权

US5701107A Phase shifter circuit using field effect transistors 失效
标题翻译：移相器电路采用场效应晶体管
公开(公告)号：US5701107A
公开(公告)日：1997-12-23
申请号：US614765
申请日：1996-03-13
申请人： Michiaki Kasahara , Hazime Kawano , Kazuyoshi Inami , Kohichi Muroi , Yoshitada Iyama
发明人： Michiaki Kasahara , Hazime Kawano , Kazuyoshi Inami , Kohichi Muroi , Yoshitada Iyama
IPC分类号： H03H7/20 , H03H11/16 , H01P3/00
CPC分类号： H03H7/20 , H03H11/20
摘要： A phase shifter, which can switch between a phase delay circuit and a phase leading circuit consisting of inductors and capacitors, is constituted by disposing FETs having inductors or capacitors arranged in parallel with the source and drain electrodes of each FET connected and controlling a bias voltage to be applied to the gate electrodes of the FETs to switch between the on and off conditions of the FETs. Thus, a phase shifter obtained has a small frequency characteristic.
摘要翻译：可以在相位延迟电路和由电感器和电容器组成的相位引导电路之间切换的移相器通过设置具有与所连接的每个FET的源极和漏极并联布置的电感器或电容器的FET来设置，并且控制偏置电压施加到FET的栅电极，以在FET的导通和关断条件之间切换。因此，获得的移相器具有小的频率特性。

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