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    • 6. 发明授权
    • Dump vehicle overturn preventing device
    • 倾倒车辆翻倒防止装置
    • US08670906B2
    • 2014-03-11
    • US13505749
    • 2010-12-09
    • Masanori IchinoseTomohiko YasudaTakayuki Sato
    • Masanori IchinoseTomohiko YasudaTakayuki Sato
    • B60P1/56
    • B60P1/04B60P1/045B60P1/283
    • Provided is an overturn preventing device for a dump vehicle equipped with a body (3) and hoist cylinders (5). The dump vehicle overturn preventing device comprises: a loaded weight estimation unit (32) which estimates loaded weight on the body; a vehicle rotation moment calculation unit (33) which calculates a vehicle rotation moment Mb caused by movement of the dump vehicle's load upon discharging of the load; a reference moment calculation unit (34) which determines a reference moment Ms not greater than an overturn threshold moment MI which is the minimum value of a rotation moment required to lift the front wheels (1) off the ground; a judgment unit (35) which judges whether or not the vehicle rotation moment Mb has exceeded the reference moment Ms; and a display device (37) which notifies the driver that there is a probability of an overturn of the vehicle when the vehicle rotation moment Mb is judged to have exceeded the reference moment Ms. The device thus prevents overturning of the vehicle caused by the load sliding down from the body in a lump.
    • 本发明提供一种用于装备有主体(3)和起重缸(5)的倾卸车辆的翻倒防止装置。 倾倒车辆翻倒防止装置包括:负载重量估计单元(32),其估计车身上的重量; 车辆旋转力矩计算单元(33),其计算由所述倾卸车辆的负载在所述负载的放电时的移动而引起的车辆旋转力矩Mb; 确定不大于将前轮(1)离开地面所需的旋转力矩的最小值的倾覆阈值力矩MI的参考力矩Ms确定的基准力矩计算单元(34) 判断车辆旋转时刻Mb是否超过基准时刻Ms的判断单元(35) 以及显示装置(37),当车辆旋转力矩Mb被判断为超过基准时刻时,通知驾驶员存在车辆翻倒的可能性。该装置因此防止由负载引起的车辆翻倒 从身体滑落下来。
    • 8. 发明授权
    • Method for producing group III nitride-based compound semiconductor
    • 制备III族氮化物基化合物半导体的方法
    • US08361222B2
    • 2013-01-29
    • US12081943
    • 2008-04-23
    • Shiro YamazakiSeiji NagaiTakayuki SatoKatsuhiro ImaiMakoto IwaiTakatomo SasakiYusuke MoriFumio Kawamura
    • Shiro YamazakiSeiji NagaiTakayuki SatoKatsuhiro ImaiMakoto IwaiTakatomo SasakiYusuke MoriFumio Kawamura
    • C30B15/14C30B15/00C30B21/06C30B27/02C30B28/10C30B30/04
    • C30B29/403C30B9/00C30B9/12C30B29/406
    • In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 1A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG. 1B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG. 1C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG. 1D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.
    • 在通过助熔剂制造GaN的情况下,可以防止在GaN自立基板的氮面上沉积杂晶,原料的浪费。 例示了四个坩埚和GaN自立衬底的布置。 在图 如图1A所示,自立基板的氮面与坩埚的倾斜的平坦的内壁紧密接触。 在图 如图1B所示,自立基板的氮面与坩埚的水平方向的平坦的内壁紧密接触,通过夹具固定基板。 在图 如图1C所示,在坩埚的平坦底部设置夹具,通过夹具固定两个GaN自立基板,使得基板的氮面彼此紧密接触。 在图 如图1D所示,在坩埚的平坦底部设置夹具,并且将GaN自立基板固定在夹具上,使得基板的氮面被夹具覆盖。 将熔融的镓和钠的助熔剂混合物装入每个坩埚中,并且在加压氮气下在镓面上生长GaN单晶。