专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07153359B2 Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof 有权
公开(公告)号：US07153359B2
公开(公告)日：2006-12-26
申请号：US10254013
申请日：2002-09-25
申请人： Masashi Maekawa , Keiichi Fukuyama , Michinori Iwai , Kohei Tanaka
发明人： Masashi Maekawa , Keiichi Fukuyama , Michinori Iwai , Kohei Tanaka
IPC分类号： C30B13/28
CPC分类号： H01L21/02691 , C30B13/00 , C30B29/06 , H01L21/02686 , H01L21/2026 , H01L27/1281 , H01L29/66757 , Y10S117/904 , Y10S117/905
摘要： A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.

2. 发明授权

US07049183B2 Semiconductor film, method for manufacturing semiconductor film, semiconductor device, and method for manufacturing semiconductor device 失效
标题翻译：半导体膜，半导体膜的制造方法，半导体装置以及半导体装置的制造方法
公开(公告)号：US07049183B2
公开(公告)日：2006-05-23
申请号：US10699460
申请日：2003-11-03
申请人： Naoki Makita , Michinori Iwai , Shinya Morino , Takayuki Tsutsumi
发明人： Naoki Makita , Michinori Iwai , Shinya Morino , Takayuki Tsutsumi
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02675 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/41733 , H01L29/66757 , H01L29/78675
摘要： A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the amorphous semiconductor layer and then performing a first heat treatment so as to crystallize the amorphous semiconductor layer, thereby obtaining a crystalline semiconductor layer, performing a first gettering process to remove the catalyst element from the semiconductor layer, and performing a second gettering process that is different from the first gettering process to remove the catalyst element from the semiconductor layer. The first gettering process includes removing at least large masses of a semiconductor compound of the catalyst element present in the crystalline semiconductor layer. The second gettering process includes moving at least a portion of the catalyst element remaining in the crystalline semiconductor layer so as to form a low-catalyst-concentration region in the crystalline semiconductor layer, the low-catalyst-concentration region having a lower catalyst element concentration than in other regions.
摘要翻译：本发明的方法包括以下步骤：在绝缘表面上形成非晶半导体层，向非晶半导体层添加能够促进结晶的催化剂元件，然后进行第一热处理以使非晶半导体层结晶，由此获得晶体半导体层，执行第一吸气工艺以从半导体层去除催化剂元件，以及执行与第一吸气过程不同的第二吸气过程以从半导体层去除催化剂元件。第一吸气方法包括除去至少大质量的结晶半导体层中存在的催化剂元素的半导体化合物。第二吸气过程包括将至少一部分留在结晶半导体层中的催化剂元素移动以在结晶半导体层中形成低催化剂浓度区域，低催化剂浓度区域具有较低的催化剂元素浓度比其他地区。

3. 发明授权

US06673659B2 Semiconductor device and method of producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06673659B2
公开(公告)日：2004-01-06
申请号：US09771625
申请日：2001-01-30
申请人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Michinori Iwai
发明人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Michinori Iwai
IPC分类号： H01L2100
CPC分类号： H01L27/1218 , G02F1/13454 , H01L21/67236 , H01L27/1214 , H01L27/1262 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L2029/7863
摘要： A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film in which the composition ratios of N, O and H are continuously changed by changing the flow rates of H2 and N2O, is used as the base film to prevent a change in the TFT characteristics. The base film can be formed by varying the flow rates of H2 and N2O in the same film-forming chamber to enhance the productivity.
摘要翻译：为了防止杂质从玻璃基板扩散到有源层中，为了保持诸如TFT的Vth和S值的特性的稳定性，为了保持提高的生产率，为TFT形成基膜。使用通过改变H 2和N 2 O的流量来连续地改变N，O和H的组成比的膜作为基膜，以防止TFT特性的变化。基膜可以通过改变相同成膜室中的H 2和N 2 O的流速来提高生产率而形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式