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1. 发明授权

US08716732B2 Light emitting element 有权
标题翻译：发光元件
公开(公告)号：US08716732B2
公开(公告)日：2014-05-06
申请号：US13137540
申请日：2011-08-24
申请人： Masao Kamiya , Masashi Deguchi
发明人： Masao Kamiya , Masashi Deguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/20 , H01L33/382 , H01L33/46 , H01L33/60 , H01L2924/0002 , H01L2933/0025 , H01L2924/00
摘要： A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.
摘要翻译：发光元件包括半导体层叠结构，其包括第一导电类型的第一半导体层，发光层和不同于第一导电类型的第二导电类型的第二半导体层，第二半导体层的一部分和去除所述发光层以暴露所述第一半导体层的一部分，所述半导体层叠结构上的第一反射层，并且包括开口，所述开口形成在所述第一半导体层的暴露部分中，用于载体的透明布线电极通过所述开口注入到所述第一半导体层或所述第二半导体层中的第二反射层，形成在所述透明布线电极上并覆盖所述开口的一部分的第二反射层，以便反射从所述发光层发射的光并通过所述开口返回到第一半导体层。

2. 发明授权

US06253305B1 Microprocessor for supporting reduction of program codes in size 有权
标题翻译：支持缩小程序代码的微处理器
公开(公告)号：US06253305B1
公开(公告)日：2001-06-26
申请号：US09226791
申请日：1999-01-07
申请人： Toshimichi Matsuzaki , Masashi Deguchi , Toshifumi Hamaguchi , Yutaka Tanase , Masahiko Matsumoto
发明人： Toshimichi Matsuzaki , Masashi Deguchi , Toshifumi Hamaguchi , Yutaka Tanase , Masahiko Matsumoto
IPC分类号： G06F922
CPC分类号： G06F9/3814 , G06F9/30149 , G06F9/30156 , G06F9/30167 , G06F9/30178 , G06F9/3802 , G06F9/3816 , G06F9/383
摘要： A microprocessor is provided for supporting reduction of codes in size, wherein instructions are extended in units of 0.5 word from a basic one word code. A word of instruction, fetched from an external memory, is transferred to a decoding register via instruction buffers and a selector both operate in units of half words, then is decoded by a decoder. A storage unit stores a state of an instruction stored in an instruction buffer. A controlling unit controls the selector so that the instructions are transferred from instruction buffers to the decoding register in units of half words based on a direction from the decoder and the states stored in the storage unit.
摘要翻译：提供了一种微处理器，用于支持尺寸减小的代码，其中指令以基本一字代码的0.5字为单位进行扩展。从外部存储器取出的指令字通过指令缓冲器传送到解码寄存器，选择器以半字为单位进行操作，然后由解码器解码。存储单元存储存储在指令缓冲器中的指令的状态。控制单元控制选择器，使得指令基于来自解码器的方向和存储在存储单元中的状态，以半字为单位从指令缓冲器传送到解码寄存器。

3. 发明授权

US09117973B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09117973B2
公开(公告)日：2015-08-25
申请号：US13317692
申请日：2011-10-26
申请人： Masashi Deguchi
发明人： Masashi Deguchi
IPC分类号： H01L33/00 , H01L33/42 , H01L33/38 , H01L33/46 , H01L33/32
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/46
摘要： A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, a first transparent electrode formed on the second conductive type layer, a reflecting layer formed on the first transparent electrode, and including a smaller area than the first transparent electrode, a second transparent electrode formed on the first transparent electrode so as to cover the reflecting layer, and a pad electrode formed on the second transparent electrode and in a region above the reflecting layer.
摘要翻译：半导体发光元件包括半导体多层结构，其包括第一导电类型层，第二导电类型层和夹在第一导电类型层和第二导电类型层之间的发光层，形成在第二导电类型层上的第一透明电极形成在第一透明电极上并具有比第一透明电极小的区域的反射层，形成在第一透明电极上以覆盖反射层的第二透明电极和形成在第二透明电极上的第二透明电极的焊盘电极透明电极和反射层上方的区域。

4. 发明授权

US09099627B2 Method for producing group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US09099627B2
公开(公告)日：2015-08-04
申请号：US13824286
申请日：2011-07-12
申请人： Shingo Totani , Masashi Deguchi , Miki Moriyama
发明人： Shingo Totani , Masashi Deguchi , Miki Moriyama
IPC分类号： H01L33/60 , H01L33/44 , H01L33/46 , H01L33/38
CPC分类号： H01L33/60 , H01L33/38 , H01L33/44 , H01L33/46 , H01L2933/0025
摘要： Sample A is produced by sequentially forming a first insulating film of SiO2 and a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO2, a reflective film, and a second insulating film of SiO2 on a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600° C. for three minutes. As shown in FIG. 1, in Al/Ag/Al where Al has a thickness of 1 Å to 30 Å, Ag/Al where Al has a thickness of 20 Å, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 Å, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.
摘要翻译：通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜和反射膜来制造样品A. 样品B通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜，反射膜和SiO 2的第二绝缘膜来制造。在样品A和B中，在热处理前后在450nm的波长下测量反射膜的反射率。在600℃下进行热处理3分钟。如图所示。如图1所示，在Al / Ag / Al中，其中Al具有厚度为的厚度为的Al / Ag / Al，Al的厚度为Al，Al / Ag / Al / Ag / Al，其中Al的厚度为反射率为95％以上，即使在热处理后也等于或高于Ag。

5. 发明授权

US09024342B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09024342B2
公开(公告)日：2015-05-05
申请号：US13200927
申请日：2011-10-05
申请人： Masao Kamiya , Masashi Deguchi
发明人： Masao Kamiya , Masashi Deguchi
IPC分类号： H01L33/46 , H01L33/38 , H01L33/22
CPC分类号： H01L33/38 , H01L33/22 , H01L33/46
摘要： A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.
摘要翻译：半导体发光元件包括半导体多层结构，其包括第一导电类型层，第二导电类型层和夹在第一导电类型层和第二导电类型层之间的发光层，以及反射层，形成在第二导电类型导电型层，用于反射从发光层发射的光。沿着从发光层朝向第一导电型层的方向提取光。第一导电类型层包括在与发光层不相对的表面上的凹凸区域，用于改变光的路径，并且反射层的至少一部分形成为延伸到凹凸的边缘的正上方 -convex区域。

6. 发明申请

US20130203194A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：生产III族氮化物半导体发光器件的方法
公开(公告)号：US20130203194A1
公开(公告)日：2013-08-08
申请号：US13824286
申请日：2011-06-12
申请人： Shingo Totani , Masashi Deguchi , Miki Moriyama
发明人： Shingo Totani , Masashi Deguchi , Miki Moriyama
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/38 , H01L33/44 , H01L33/46 , H01L2933/0025
摘要： Sample A is produced by sequentially forming a first insulating film of SiO2 and a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO2, a reflective film, and a second insulating film of SiO2 on a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600° C. for three minutes. As shown in FIG. 1, in Al/Ag/Al where Al has a thickness of 1 Å to 30 Å, Ag/Al where Al has a thickness of 20 Å, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 Å, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.
摘要翻译：通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜和反射膜来制造样品A. 样品B通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜，反射膜和SiO 2的第二绝缘膜来制造。在样品A和B中，在热处理前后在450nm的波长下测量反射膜的反射率。在600℃下进行热处理3分钟。如图所示。如图1所示，在Al / Ag / Al中，其中Al具有厚度为的厚度为的Al / Ag / Al，Al的厚度为Al，Al / Ag / Al / Ag / Al，其中Al的厚度为反射率为95％以上，即使在热处理后也等于或高于Ag。

7. 发明授权

US08466481B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08466481B2
公开(公告)日：2013-06-18
申请号：US13064453
申请日：2011-03-25
申请人： Masashi Deguchi , Masao Kamiya
发明人： Masashi Deguchi , Masao Kamiya
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/382 , H01L33/405 , H01L33/42
摘要： A first intermediate electrode 30 is a plural number of electrodes connecting to plural electrode forming parts formed in plural places, respectively on the surface of a first semiconductor layer 104. A second intermediate electrode 40 is a plural number of electrodes connecting to plural places of a transparent electrically conductive film 10, respectively. A first electrode 60 connects a plural number of the first intermediate electrodes 30 to each other, and a second electrode 70 connects a plural number of the second intermediate electrodes 40 to each other. The transparent electrically conductive film 10 is formed thin in a region A where a distance between the first intermediate electrode and the second intermediate electrode is the shortest, as compared with other regions.
摘要翻译：第一中间电极30是分别在第一半导体层104的表面上连接多个形成在多个位置的多个电极形成部的多个电极。第二中间电极40是连接多个位置的多个电极透明导电膜10。第一电极60将多个第一中间电极30彼此连接，第二电极70将多个第二中间电极40彼此连接。与其他区域相比，透明导电膜10在第一中间电极和第二中间电极之间的距离最短的区域A中形成得较薄。

8. 发明申请

US20120049219A1 Light emitting element 有权
标题翻译：发光元件
公开(公告)号：US20120049219A1
公开(公告)日：2012-03-01
申请号：US13137540
申请日：2011-08-24
申请人： Masao Kamiya , Masashi Deguchi
发明人： Masao Kamiya , Masashi Deguchi
IPC分类号： H01L33/60
CPC分类号： H01L33/42 , H01L33/20 , H01L33/382 , H01L33/46 , H01L33/60 , H01L2924/0002 , H01L2933/0025 , H01L2924/00
摘要： A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer: a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.
摘要翻译：发光元件包括半导体层叠结构，其包括第一导电类型的第一半导体层，发光层和不同于第一导电类型的第二导电类型的第二半导体层，第二半导体层的一部分和去除所述发光层以暴露所述第一半导体层的一部分：所述半导体层叠结构上的第一反射层，并且包括开口，所述开口形成在所述第一半导体层的暴露部分中，所述透明布线电极用于载体通过所述开口注入到所述第一半导体层或所述第二半导体层中的第二反射层，形成在所述透明布线电极上并覆盖所述开口的一部分的第二反射层，以便反射从所述发光层发射的光并通过所述开口返回到第一半导体层。

9. 发明申请

US20080308964A1 Method for forming film of silane coupling agent 审中-公开
标题翻译：形成硅烷偶联剂薄膜的方法
公开(公告)号：US20080308964A1
公开(公告)日：2008-12-18
申请号：US12213053
申请日：2008-06-13
申请人： Tsuyoshi Amatani , Mutsuyuki Kawaguchi , Satoshi Saitou , Masashi Deguchi
发明人： Tsuyoshi Amatani , Mutsuyuki Kawaguchi , Satoshi Saitou , Masashi Deguchi
IPC分类号： B28B11/04
CPC分类号： H05K3/389 , C23C26/00 , H05K2203/0766 , H05K2203/0786
摘要： A method for forming a film of silane coupling agent on a metal surface is provided. The method includes: a step of applying a solution containing a silane coupling agent on the metal surface; a step of drying the metal surface coated with the solution at a temperature in the range of 25 to 150° C. and for a length of time of 5 minutes or less; and a step of water-rinsing the dried metal surface.
摘要翻译：提供了一种在金属表面上形成硅烷偶联剂的膜的方法。该方法包括：在金属表面上涂布含有硅烷偶联剂的溶液的工序; 在25〜150℃的温度范围内干燥涂有溶液的金属表面和5分钟以下的时间的步骤; 以及对干燥的金属表面进行水冲洗的步骤。

10. 发明授权

US5649229A Pipeline data processor with arithmetic/logic unit capable of performing different kinds of calculations in a pipeline stage 失效
标题翻译：具有算术/逻辑单元的管道数据处理器能够在流水线阶段执行不同类型的计算
公开(公告)号：US5649229A
公开(公告)日：1997-07-15
申请号：US419957
申请日：1995-04-10
申请人： Toshimichi Matsuzaki , Nobuo Higaki , Masashi Deguchi
发明人： Toshimichi Matsuzaki , Nobuo Higaki , Masashi Deguchi
IPC分类号： G06F9/30 , G06F9/312 , G06F9/318 , G06F9/32 , G06F9/38 , G06F12/02 , G06F15/78 , G06F13/00
CPC分类号： G06F9/30 , G06F15/7832 , G06F9/30043 , G06F9/30058 , G06F9/30181
摘要： The data processors of the present invention transfer the contents of address registers and program registers through an unused bus during the cycle of writing into registers and execute, in one cycle, a load instruction or a store instruction that requires address calculation, although the processors have two buses and one arithmetic/logic unit. Also, the data processors assign basic arithmetic instructions between registers and load/store instructions instruction codes having a basic instruction word length of one byte by functionally dividing general purpose-registers into four address registers and four data registers.
摘要翻译：本发明的数据处理器在写入寄存器的周期期间通过未使用的总线传送地址寄存器和程序寄存器的内容，并且在一个周期中执行需要地址计算的加载指令或存储指令，尽管处理器具有两个总线和一个算术/逻辑单元。此外，数据处理器通过将通用寄存器功能划分为四个地址寄存器和四个数据寄存器来分配寄存器之间的基本算术指令和加载/存储指令，其具有一个字节的基本指令字长度。

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