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1. 发明授权

US4612148A Process for producing stretched articles of ultrahigh-molecular-weight polyethylene 失效
标题翻译：用于生产超高分子量聚乙烯拉伸制品的方法
公开(公告)号：US4612148A
公开(公告)日：1986-09-16
申请号：US755590
申请日：1985-07-16
申请人： Masanori Motooka , Hitoshi Mantoku , Takao Ohno
发明人： Masanori Motooka , Hitoshi Mantoku , Takao Ohno
IPC分类号： B29C47/00 , B29C47/86 , B29C55/00 , C08J5/18 , C08L23/06 , D01F6/46 , D01F1/10 , D01D5/088
CPC分类号： C08J5/18 , B29C47/0004 , B29C47/0014 , B29C47/0021 , B29C47/802 , B29C47/86 , B29C47/862 , B29C47/8805 , B29C47/8895 , C08F255/02 , C08L23/06 , D01F6/46 , B29C47/0057 , B29C47/02 , B29C55/00 , B29K2023/06 , B29K2023/0683 , B29K2995/0088 , B29L2007/008 , C08J2323/06
摘要： Stretched articles of ultrahigh-molecular-weight polyethylene are prepared by melt-kneading a mixture of ultrahigh-molecular-weight polyethylene with a paraffinic wax having a melting point of 40.degree. to 120.degree. C. and a weight average molecular weight of at least 230 but less than 2000 in a screw extruder while maintaining the temperature of the mixture at 180.degree. to 280.degree. C. The molten mixture is melt-extruded through a die at a temperature of 180.degree. to 300.degree. C. under a draft condition of a draft ratio of less than 2 or in the absence of a draft and the resulting unstretched extrudate is cooled to solidify it. The unstretched solidified extrudate is than subjected to a stretching treatment in a heated liquid medium which is a solvent for the paraffinic wax at a temperature of 60.degree. to 140.degree. C. at a particular stretch ratio. Stretch shaped articles of ultrahigh-molecular-weight polyethylene having high tensile strength and modulus of elasticity are produced uniformly and reproducibly. The stretched shaped articles are substantially free from stretching uneveness. Examples of the paraffinic wax include n-alkanes having at least 22 carbon atoms.

2. 发明授权

US4545950A Process for producing stretched articles of ultrahigh-molecular-weight polyethylene 失效
标题翻译：用于生产超高分子量聚乙烯拉伸制品的方法
公开(公告)号：US4545950A
公开(公告)日：1985-10-08
申请号：US566302
申请日：1983-12-28
申请人： Masanori Motooka , Hitoshi Mantoku , Takao Ohno
发明人： Masanori Motooka , Hitoshi Mantoku , Takao Ohno
IPC分类号： B29C47/00 , B29C47/86 , B29C55/00 , C08J5/18 , C08L23/06 , D01F6/46 , D01F1/10 , D01D5/092
CPC分类号： C08J5/18 , B29C47/0004 , B29C47/0014 , B29C47/0021 , B29C47/802 , B29C47/86 , B29C47/862 , B29C47/8805 , B29C47/8895 , C08F255/02 , C08L23/06 , D01F6/46 , B29C47/0057 , B29C47/02 , B29C55/00 , B29K2023/06 , B29K2023/0683 , B29K2995/0088 , B29L2007/008 , C08J2323/06
摘要： Stretched articles of ultrahigh-molecular-weight polyethylene are prepared by melt-kneading a mixture of ultrahigh-molecular-weight polyethylene with a paraffinic wax having a melting point of 40.degree. to 120.degree. C. and a weight average molecular weight of at least 230 but less than 2000 in a screw extruder while maintaining the temperature of the mixture at 180.degree. to 280.degree. C. The molten mixture is melt-extruded through a die at a temperature of 180.degree. to 300.degree. C. and the resulting unstretched extrudate is cooled to solidify it. The unstretched solidified extrudate is then subjected to a stretching treatment at a temperature of 60.degree. to 140.degree. C. at a particular stretch ratio. Stretch shaped articles of ultrahigh-molecular-weight polyethylene having high tensile strength and modulus of elasticity are produced uniformly and reproducibly. The stretched shaped articles are substantially free from stretching uneveness. Examples of the paraffinic wax include n-alkanes having at least 22 carbon atoms.
摘要翻译：超高分子量聚乙烯的拉伸制品通过将超高分子量聚乙烯与熔点为40〜120℃，重均分子量为230以上的链烷烃蜡的混合物熔融混炼，但在螺杆挤出机中小于2000，同时将混合物的温度保持在180℃至280℃。熔融混合物在180℃至300℃的温度下通过模具熔融挤出，并将得到的未拉伸挤出物冷却固化。然后将未拉伸固化的挤出物以特定的拉伸比在60至140℃的温度下进行拉伸处理。均匀且可再现地制造具有高拉伸强度和弹性模量的超高分子量聚乙烯的拉伸成型制品。拉伸的成形制品基本上没有拉伸不均匀。链烷烃蜡的实例包括具有至少22个碳原子的正烷烃。

3. 发明申请

US20090061192A1 REFLECTIVE SHEET AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：反射片及其制作方法
公开(公告)号：US20090061192A1
公开(公告)日：2009-03-05
申请号：US11911435
申请日：2006-04-11
申请人： Kei Mizutani , Takashi Kushida , Satoshi Kitazawa , Takao Ohno , Koji Furuya
发明人： Kei Mizutani , Takashi Kushida , Satoshi Kitazawa , Takao Ohno , Koji Furuya
IPC分类号： B32B5/16
CPC分类号： G02B5/08 , G02B5/0808 , G02F1/133605 , Y10T428/249986
摘要： There is provided a reflective sheet made of self-sustaining porous sheet which comprises inert particles and a polyolefin and which has a porosity of 30 to 95% and a reflectivity at a wavelength of 550 nm of 60 to 120%. This reflective sheet can be reduced in thickness and weight while retaining sufficient reflectivity.
摘要翻译：提供由自持多孔片制成的反射片，其包含惰性颗粒和聚烯烃，其孔隙率为30〜95％，波长550nm的反射率为60〜120％。该反射片可以减小厚度和重量，同时保持足够的反射率。

4. 发明授权

US07407702B2 Polymetaphenylene isophthalamide-based polymer porous film, process for its production and battery separator 失效
标题翻译：聚邻苯二甲酰间苯二胺基聚合物多孔膜，其生产工艺及电池隔膜
公开(公告)号：US07407702B2
公开(公告)日：2008-08-05
申请号：US10776184
申请日：2004-02-12
申请人： Takao Ohno , Jiro Sadanobu , Tsutomu Nakamura , Susumu Honda , Toyoaki Ishiwata
发明人： Takao Ohno , Jiro Sadanobu , Tsutomu Nakamura , Susumu Honda , Toyoaki Ishiwata
IPC分类号： B32B5/22 , B01D39/14 , B05D1/22
CPC分类号： B32B27/08 , B01D67/0011 , B01D67/0016 , B01D69/02 , B01D69/141 , B01D71/56 , B01D2323/08 , B01D2323/12 , B01D2325/22 , B01D2325/24 , B32B27/18 , B32B27/304 , B32B27/34 , B32B27/36 , B32B38/0036 , B32B2305/026 , B32B2307/306 , B32B2307/724 , B32B2309/025 , B32B2377/00 , B32B2457/10 , C08J5/18 , C08J9/28 , C08J2201/0542 , C08J2377/10 , H01M2/1646 , H01M2/1653 , H01M2/166 , Y10T428/249978 , Y10T428/249979 , Y10T428/24998 , Y10T428/249981 , Y10T428/249986 , Y10T428/249991 , Y10T428/249992 , Y10T428/249993 , Y10T428/31725
摘要： A polymetaphenylene isophthalamide-based polymer porous film having a satisfactory porous structure that exhibits excellent gas permeability and heat resistance. It is produced by a process which comprises casting a dope of the polymetaphenylene isophthalamide-based polymer and coagulating it in a coagulating bath. The porous film may also contain inorganic whiskers, and a composite porous film may be formed in combination with a separate thermoplastic polymer film.
摘要翻译：具有令人满意的多孔结构的聚邻苯二甲酰间苯二胺系聚合物多孔膜具有优异的透气性和耐热性。它是通过一种方法生产的，该方法包括将聚邻苯二甲酰间苯二胺基聚合物的掺杂物浇铸并在凝固浴中凝结。多孔膜也可以含有无机晶须，并且复合多孔膜可以与单独的热塑性聚合物膜组合形成。

5. 发明申请

US20050167812A1 Semiconductor device, three-dimensional semiconductor device, and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体器件，三维半导体器件以及半导体器件的制造方法
公开(公告)号：US20050167812A1
公开(公告)日：2005-08-04
申请号：US11062735
申请日：2005-02-23
申请人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
发明人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
IPC分类号： H01L21/768 , H01L23/31 , H01L23/48 , H01L23/485 , H01L23/522 , H01L25/065 , H01L29/76
CPC分类号： H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/13008 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
摘要翻译：提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。通过蚀刻形成孔，电极焊盘用作蚀刻停止层。埋入电极形成在孔中。该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

6. 发明授权

US4830996A Ferroelectric ceramics 失效
标题翻译：铁电陶瓷
公开(公告)号：US4830996A
公开(公告)日：1989-05-16
申请号：US218550
申请日：1988-07-13
申请人： Nobuki Hirai , Yoshihisa Ushida , Takao Ohno
发明人： Nobuki Hirai , Yoshihisa Ushida , Takao Ohno
IPC分类号： C04B35/493 , H01L41/187
CPC分类号： C04B35/493 , H01L41/187
摘要： Ferroelectric ceramics represented by xPbTiO.sub.3 -yPbZrO.sub.3 -zPb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -mSrTiO.sub.3 -nSnO.sub.2 -pZnO-qBi.sub.2 O.sub.3 -rX wherein x,y,z,m,n,p,q and r represent amounts by mole, respectively, with the proviso that x+y+z being 1, Z is at least one oxide selected from the group consisting of Dy.sub.2 O.sub.3, Ta.sub.2 O.sub.5, and Y.sub.2 O.sub.3, and wherein x is from 0.25 to 0.50, y is from 0.05 to 0.70, z is from 0.05 to 0.70, m is from 0 to 0.10, n is from 0 to 0.04, p is from 0 to 0.04, q is from 0 to 0.02 and r is from 0.005 to 0.02. The disclosed ferroelectric ceramics have increased relative dielectric constant and/or electromechanical coupling factor, and are suitable for use as actuators.

7. 发明授权

US08216934B2 Semiconductor device suitable for a stacked structure 有权
标题翻译：适用于堆叠结构的半导体器件
公开(公告)号：US08216934B2
公开(公告)日：2012-07-10
申请号：US12976089
申请日：2010-12-22
申请人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
发明人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/13008 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
摘要翻译：提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。通过蚀刻形成孔，电极焊盘用作蚀刻停止层。埋入电极形成在孔中。该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

8. 发明申请

US20090020100A1 INTERNAL COMBUSTION ENGINE CONTROL APPARATUS 有权
标题翻译：内燃机发动机控制装置
公开(公告)号：US20090020100A1
公开(公告)日：2009-01-22
申请号：US12145001
申请日：2008-06-24
申请人： Keiichiro SAKAIGAKI , Takao Ohno , Akira Furuta
发明人： Keiichiro SAKAIGAKI , Takao Ohno , Akira Furuta
IPC分类号： F02D41/00
CPC分类号： F02D41/22 , F02D41/009 , F02D2041/0095 , F02D2250/06 , F02N11/0825 , F02N11/10 , F02N2250/04 , Y02T10/40 , Y02T10/48
摘要： In order to accurately detect an abnormal state of a rotation direction detection unit for detecting a rotation direction of a crank shaft, provided is an internal combustion engine control apparatus including: a rotation detection unit including the rotation direction detection unit for detecting the rotation direction of the crank shaft of an engine to output a rotation direction signal, and a rotation speed detection unit for outputting a pulse signal according to a rotation speed of the crank shaft; a stop position calculation unit for calculating, based on an output from the rotation detection unit, a stop position of the crank shaft when the engine stops; and an abnormal state detection unit for detecting the abnormal state of the rotation direction detection unit when an actual rotation direction of the crank shaft differs from the rotation direction of the crank shaft based on the rotation direction signal.
摘要翻译：为了精确地检测用于检测曲轴的旋转方向的旋转方向检测单元的异常状态，提供了一种内燃机控制装置，包括：旋转检测单元，包括：旋转方向检测单元，用于检测曲轴的旋转方向用于输出旋转方向信号的发动机的曲轴;以及转速检测单元，用于根据曲轴的转速输出脉冲信号; 停止位置计算单元，用于基于来自所述旋转检测单元的输出，计算当所述发动机停止时所述曲轴的停止位置; 以及异常状态检测单元，用于当曲轴的实际旋转方向与曲轴的旋转方向基于旋转方向信号不同时，检测旋转方向检测单元的异常状态。

9. 发明申请

US20090008798A1 SEMICONDUCTOR DEVICE SUITABLE FOR A STACKED STRUCTURE 有权
标题翻译：适用于堆叠结构的半导体器件
公开(公告)号：US20090008798A1
公开(公告)日：2009-01-08
申请号：US12210645
申请日：2008-09-15
申请人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
发明人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
IPC分类号： H01L23/52
CPC分类号： H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/13008 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
摘要翻译：提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。通过蚀刻形成孔，电极焊盘用作蚀刻停止层。埋入电极形成在孔中。该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

10. 发明授权

US5863355A Flux for soldering electronic components on circuit substrates, and mounted or unmounted circuit substrate 失效
标题翻译：用于焊接电路基板上的电子元件的焊剂，以及安装或未安装的电路基板
公开(公告)号：US5863355A
公开(公告)日：1999-01-26
申请号：US606772
申请日：1996-02-27
申请人： Takao Ohno , Shouichi Saito , Satoshi Shinohara , Kazuyuki Takakuwa
发明人： Takao Ohno , Shouichi Saito , Satoshi Shinohara , Kazuyuki Takakuwa
IPC分类号： B23K35/363 , B23K35/36 , H05K3/06
CPC分类号： B23K35/3618 , B23K35/3613 , B23K35/3615
摘要： The invention provides a soldering flux for mounting circuit substrates, which is free from any organic solvent attributable to air pollution and dispenses with any washing step. The soldering flux is obtained by dissolving a rosin modified by an unsaturated organic acid according to the Diels-Alder reaction in an aqueous solvent. A volatile basic agent may further be contained in the flux.
摘要翻译：本发明提供了一种用于安装电路基板的助焊剂，其不受任何有机溶剂的影响，可由于空气污染而排除任何洗涤步骤。焊剂通过将根据Diels-Alder反应的不饱和有机酸改性的松香溶解在水性溶剂中而获得。挥发性碱性剂可以进一步包含在助熔剂中。

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