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1. 发明授权

US07116691B2 Edge-emitting type semiconductor laser 有权
标题翻译：边缘发射型半导体激光器
公开(公告)号：US07116691B2
公开(公告)日：2006-10-03
申请号：US10766035
申请日：2004-01-29
申请人： Masanobu Ando , Hiroshi Watanabe
发明人： Masanobu Ando , Hiroshi Watanabe
IPC分类号： H01S5/20
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34 , H01S2301/18
摘要： The interval Λ between each stripe of interference fringe generated in a conventional n-type contact layer is determined by a function (f(λ)=λ(n2−neq2)−1/2/2) wherein λ, n, and neq represent luminous wavelength λ of lights radiated from a light emitting part 104, refractive index n of the n-type contact layer, and equivalent refractive index neq of the n-type contact layer in guided wave mode, respectively. The remaining thickness δ of the n-type contact layer 102 at the concave part D which is formed at the back surface of the crystal growth substrate may be about Λ/2. When at least one portion of the n-type contact layer which is formed right beneath the laser cavity remains with about δ in thickness, the n-type contact layer arranged even right beneath the laser cavity can maintain excellent contact to a negative electrode. As a result, effective light confinement enables to adequately suppress ripples in FFP owing to lights leaked into the n-type contact layer, to thereby provide a semiconductor laser which oscillates stable lights.
摘要翻译：在常规n型接触层中产生的每条条纹干涉条纹之间的间隔Lλ由函数（f（λ）=λ（n≥0） 2/2）其中λ，n和n eq表示从发光部分辐射的光的发光波长λ 104，导向波模式中n型接触层的n型接触层的折射率n和等效折射率n eq eq 。形成在晶体生长衬底的背面的凹部D处的n型接触层102的剩余厚度δ可以为约λ/ 2。当在激光腔正下方形成的n型接触层的至少一部分保持厚度约为三角形时，即使在激光腔正下方布置的n型接触层可以保持与负电极的良好接触。结果，有效的光限制能够充分地抑制由于光泄漏到n型接触层中的FFP中的波纹，从而提供振荡稳定的光的半导体激光器。

2. 发明申请

US20110073890A1 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US20110073890A1
公开(公告)日：2011-03-31
申请号：US12726452
申请日：2010-03-18
申请人： Yoshiaki Sugizaki , Akihiro Kojima , Masanobu Ando , Kazuyoshi Furukawa
发明人： Yoshiaki Sugizaki , Akihiro Kojima , Masanobu Ando , Kazuyoshi Furukawa
IPC分类号： H01L33/44
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.
摘要翻译：本发明的半导体发光元件的制造方法包括：在临时衬底的主表面上形成包括发光层和第一互连层的半导体层; 通过沟槽将半导体层和第一互连层分成多个芯片; 将临时衬底上的多个芯片中彼此不相邻的多个芯片的每个分割部分的每个分割部分连接到第二互连层，同时与临时衬底的主表面和主要衬底相对形成第二互连层的支撑基板的表面，并且在照射接合的芯片和临时基板之间的界面照射之后，将多个接合的芯片从临时基板共同转移到支撑基板，并将芯片和临时基板彼此分离。

3. 发明申请

US20100151612A1 Group III-V semiconductor device and method for producing the same 有权
标题翻译： III-V族半导体器件及其制造方法
公开(公告)号：US20100151612A1
公开(公告)日：2010-06-17
申请号：US12656970
申请日：2010-02-22
申请人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Kazuyoshi Tomita
发明人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Kazuyoshi Tomita
IPC分类号： H01L21/20 , H01L21/18
CPC分类号： H01L33/025 , H01L33/0079 , H01L33/46
摘要： A method for producing a Group III-V semiconductor device, includes forming, on a base, a plurality of semiconductor devices isolated from one another, forming, through ion implantation, a high-resistance region in a surface layer of a side surface of each semiconductor device, after formation of the high-resistance region, forming a p-electrode and a low-melting-point metal diffusion prevention layer on the top surface of the semiconductor device, bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer, and removing the base through the laser lift-off process.
摘要翻译：一种制造III-V族半导体器件的方法，包括在基底上形成彼此隔离的多个半导体器件，通过离子注入形成每个半导体器件的侧表面的表面层中的高电阻区域半导体器件，在形成高电阻区域之后，在半导体器件的顶表面上形成p电极和低熔点金属扩散防止层，通过低电阻区域将半导体器件接合到导电支撑衬底，熔点金属层，并通过激光剥离工艺去除基体。

4. 发明授权

US07541262B2 Method for producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07541262B2
公开(公告)日：2009-06-02
申请号：US11633622
申请日：2006-12-05
申请人： Masanobu Ando , Toshiya Uemura , Shigemi Horiuchi
发明人： Masanobu Ando , Toshiya Uemura , Shigemi Horiuchi
IPC分类号： H01L21/30
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40
摘要： The present invention contemplates preventing clogging of a dicer for forming separation trenches in a semiconductor wafer, and as well improving the yield of a semiconductor device cut out of the semiconductor wafer. A second adhesive to be charged into spaces contains an epoxy material as a base material. Silica filler particles (diameter: about 2 to about 4 μm) are added to the base material in an appropriate amount. Charging of the second adhesive may be performed by adding the adhesive dropwise to a side wall of a semiconductor wafer, or by immersing an edge of the semiconductor wafer in the adhesive in the form of liquid. When a liquid-form epoxy material of low viscosity is employed, the spaces can be evenly filled with the second adhesive by capillary action. An n-electrode is formed on an exposed surface of an n-type layer through vapor deposition employing a resist mask. Separation trenches are formed through half-cut dicing from the exposed surface of the n-type layer toward the second adhesive.
摘要翻译：本发明考虑防止用于在半导体晶片中形成分离沟槽的切割机的堵塞，并且还提高从半导体晶片切出的半导体器件的产量。要填充到空间中的第二粘合剂包含环氧树脂材料作为基材。将二氧化硅填料颗粒（直径：约2至约4μm）以适当的量加入到基材中。第二粘合剂的充电可以通过将粘合剂滴加到半导体晶片的侧壁，或者通过将半导体晶片的边缘以液体的形式浸入粘合剂中来进行。当使用低粘度的液态环氧材料时，可以通过毛细作用将间隙均匀地填充第二粘合剂。通过使用抗蚀剂掩模的气相沉积在n型层的暴露表面上形成n电极。通过从n型层的暴露表面朝向第二粘合剂的半切割切割形成分离沟槽。

5. 发明授权

US08367523B2 Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device 有权
标题翻译：半导体发光元件及半导体发光元件的制造方法
公开(公告)号：US08367523B2
公开(公告)日：2013-02-05
申请号：US12726452
申请日：2010-03-18
申请人： Yoshiaki Sugizaki , Akihiro Kojima , Masanobu Ando , Kazuyoshi Furukawa
发明人： Yoshiaki Sugizaki , Akihiro Kojima , Masanobu Ando , Kazuyoshi Furukawa
IPC分类号： H01L21/46 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.
摘要翻译：本发明的半导体发光元件的制造方法包括：在临时衬底的主表面上形成包括发光层和第一互连层的半导体层; 通过沟槽将半导体层和第一互连层分成多个芯片; 将临时衬底上的多个芯片中彼此不相邻的多个芯片的每个分割部分的每个分割部分连接到第二互连层，同时与临时衬底的主表面和主要衬底相对形成第二互连层的支撑基板的表面，并且在照射接合芯片和临时基板之间的界面照射之后，将多个粘合芯片从临时基板共同转印到支撑基板，并将芯片和临时基板彼此分离。

6. 发明授权

US07754514B2 Method of making a light emitting element 失效
标题翻译：制造发光元件的方法
公开(公告)号：US07754514B2
公开(公告)日：2010-07-13
申请号：US11892258
申请日：2007-08-21
申请人： Takayoshi Yajima , Masanobu Ando , Toshiya Uemura , Akira Kojima , Koji Kaga
发明人： Takayoshi Yajima , Masanobu Ando , Toshiya Uemura , Akira Kojima , Koji Kaga
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095 , H01L33/32
摘要： A method of making a light emitting element, the light emitting element with a semiconductor layer represented by: AlXInYGa1−X−YN (0≦X≦1, 0≦Y≦1, 0≦X+Y≦1), has the step of wet-etching a surface of the semiconductor layer by using an etching solution to have a roughened surface on the semiconductor layer. The wet-etching is conducted without irradiating the surface of the semiconductor layer with a light with a wavelength region corresponding to energy higher than bandgap energy of the semiconductor layer.
摘要翻译：一种制造发光元件的方法，具有由AlXInYGa1-X-YN（0＆nlE; X＆nlE; 1,0＆amp; NlE; Y＆nlE; 1,0＆amp; NlE; X + Y＆nlE; 1）表示的半导体层的发光元件具有步骤通过使用蚀刻溶液对半导体层的表面进行湿蚀刻，以在半导体层上具有粗糙表面。在不用半导体层的能隙高于能量的波长区域的光照射半导体层的表面的情况下进行湿式蚀刻。

7. 发明申请

US20120056220A1 SEMICONDUCTOR LIGHT EMMITING DEVICE 失效
标题翻译：半导体照明装置
公开(公告)号：US20120056220A1
公开(公告)日：2012-03-08
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

8. 发明授权

US08101490B2 Method for manufacturing semiconductor device and apparatus for manufacturing same 有权
标题翻译：半导体装置的制造方法及其制造装置
公开(公告)号：US08101490B2
公开(公告)日：2012-01-24
申请号：US12728841
申请日：2010-03-22
申请人： Masanobu Ando , Toru Gotoda , Toru Kita
发明人： Masanobu Ando , Toru Gotoda , Toru Kita
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： B32B38/10 , B23K26/40 , B23K26/53 , B23K2103/50 , B32B2309/02 , B32B2309/105 , B32B2310/0843 , B32B2311/08 , B32B2311/18 , B32B2457/206
摘要： A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.
摘要翻译：一种制造半导体器件的方法包括：用激光照射生长衬底，将激光聚焦在用于半导体器件的晶体内或生长衬底内的规定位置内，用于半导体器件的晶体形成在第一主要部分上生长底物的表面; 在平行于第一主表面的方向上移动激光; 并且从生长衬底剥离包括用于半导体器件的晶体的薄层，激光的波长比用于半导体器件或生长衬底的晶体的吸收端波长长，激光被照射在用于半导体器件或生长衬底内的晶体。

9. 发明申请

US20110039356A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SAME 有权
标题翻译：制造半导体器件的方法及其制造方法
公开(公告)号：US20110039356A1
公开(公告)日：2011-02-17
申请号：US12728841
申请日：2010-03-22
申请人： Masanobu Ando , Toru Gotoda , Toru Kita
发明人： Masanobu Ando , Toru Gotoda , Toru Kita
IPC分类号： H01L21/66 , B32B38/10
CPC分类号： B32B38/10 , B23K26/40 , B23K26/53 , B23K2103/50 , B32B2309/02 , B32B2309/105 , B32B2310/0843 , B32B2311/08 , B32B2311/18 , B32B2457/206
摘要： A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconductor device being formed on a first major surface of the growth substrate; moving the laser light in a direction parallel to the first major surface; and peeling off a thin layer including the crystal for the semiconductor device from the growth substrate, a wavelength of the laser light being longer than an absorption end wavelength of the crystal for the semiconductor device or the growth substrate, the laser light being irradiated inside a crystal for the semiconductor device or inside the growth substrate.
摘要翻译：一种制造半导体器件的方法包括：用激光照射生长衬底，将激光聚焦在用于半导体器件的晶体内或生长衬底内的规定位置内，用于半导体器件的晶体形成在第一主要部分上生长底物的表面; 在平行于第一主表面的方向上移动激光; 并且从生长衬底剥离包括用于半导体器件的晶体的薄层，激光的波长比用于半导体器件或生长衬底的晶体的吸收端波长长，激光被照射在用于半导体器件或生长衬底内的晶体。

10. 发明申请

US20100081256A1 Method for producing group III nitride compound semiconductor element 有权
标题翻译：制备III族氮化物半导体元件的方法
公开(公告)号：US20100081256A1
公开(公告)日：2010-04-01
申请号：US12585969
申请日：2009-09-29
申请人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
发明人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
IPC分类号： H01L21/302
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46
摘要： A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other. Next, the epitaxial layer is divided into each chip by separating the epitaxial growth substrate by laser lift-off, and then removing the epitaxial layer serving as the outer periphery of each chip. Next, the outer peripheral side surface of the epitaxial layer of each chip is at least completely covered with an insulating protective film. Next, the supporting substrate is separated into each chip.
摘要翻译：制造III族氮化物化合物半导体元件的方法包括：使用不同种类的基板作为外延生长基板，生长含有III族氮化物化合物半导体的外延层，将支撑基板通过外延生长层的上表面附着在外延生长层的顶面导电层，然后通过激光剥离去除外延生长衬底。在外延层和支撑基板的粘合之前，形成至少到达外延层的底表面与外延生长衬底之间的界面的第一沟槽，该外延生长衬底从形成在外延生长衬底上的外延层的顶表面起作用当所述外延层和所述支撑基板彼此接合时与所述晶片的外部连通的通风口。接下来，通过用激光剥离分离外延生长衬底，然后除去作为每个芯片的外周的外延层，将外延层分成每个芯片。接下来，每个芯片的外延层的外周侧表面至少完全被绝缘保护膜覆盖。接下来，将支撑基板分离成各个芯片。

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