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    • 10. 发明授权
    • Process for producing semiconductor device comprising two step annealing
treatment
    • 包括两步退火处理的半导体器件的制造方法
    • US5420079A
    • 1995-05-30
    • US979457
    • 1992-11-20
    • Shigeo OnishiAkitsu AyukawaKenichi Tanaka
    • Shigeo OnishiAkitsu AyukawaKenichi Tanaka
    • H01L21/265H01L21/336H01L21/324
    • H01L29/66575H01L21/26513H01L21/2652Y10S148/003
    • The disclosed invention is a process for fabricating a semiconductor device comprising the steps of:forming a gate electrode;covering the gate electrode and surface of the substrate with a layer of silicon dioxide;etching the silicon dioxide layer using an RIE method and an HF etching method to form a sidewall of silicon dioxide against each side of the gate electrode;injecting ions into the substrate at an acceleration energy within the range of about 10-20 KeV to minimize crystalline defects in the substrate caused by ion injection;heating the entire substrate in two successive stages: (a) initially at a first temperature within the range of 700.degree.-850.degree. C. for approximately one hour to recover the crystallinity of the substrate damaged in the injecting step and to inhibit diffusion of impurities; and (b) then at a second temperature within the range of 900.degree.-1100.degree. C. for 5-15 seconds to form a shallow depth diffusion region in the substrate.
    • 所公开的发明是一种制造半导体器件的方法,包括以下步骤:形成栅电极; 用二氧化硅层覆盖栅电极和衬底表面; 使用RIE方法和HF蚀刻方法蚀刻二氧化硅层,以形成针对栅电极的每一侧的二氧化硅的侧壁; 以约10-20keV的范围内的加速能量将离子注入衬底,以最小化由离子注入引起的衬底中的晶体缺陷; 在两个连续的阶段中加热整个基板:(a)最初在700-850℃范围内的第一温度下持续约1小时,以恢复在注入步骤中损坏的底物的结晶度并抑制杂质扩散 ; 和(b)然后在900℃-1100℃的第二温度下进行5-15秒,以在衬底中形成浅深度扩散区域。