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    • 1. 发明授权
    • Magnetooptic device and its driving method
    • 磁光装置及其驱动方法
    • US5173955A
    • 1992-12-22
    • US658328
    • 1991-02-20
    • Masamichi YamanishiHitoshi Oda
    • Masamichi YamanishiHitoshi Oda
    • G02F1/095G11B11/105G11C7/00H01S5/026
    • G11C7/005G02F1/0955G11B11/10584G11B11/10589H01S5/026
    • There is provided a magnetooptic device including a substrate; a semiconductor layer having a quantum well structure formed on the substrate, in which the semiconductor layer is formed by alternately laminating a well layer and a barrier layer and at least the barrier layer in those layers contains magnetic ions; and electrodes to apply an electric field to the semiconductor layer. A light which was polarized in a predetermined direction is input to the semiconductor layer. A magnetic field is applied to the semiconductor layer. An electric field is applied to the semiconductor layer by the electrodes. The light which was transmitted in the semiconductor layer is extracted. A degree of leakage of a wave function of the carrier in the well layer into the barrier layer changes. An effective magnetic field which a carrier spin feels changes by an exchange interaction between the carrier spin and a magnetic moment associated with the magnetic ions. Thus, a degree of magnetooptic effect which is given to the transmission light changes. The degree of manetooptic effect can be controlled by the applied electric field. The magnetooptic device is preferably used as an optical modulator or an optical isolator in the field of optical communications or optical memories.
    • 提供了包括基板的磁光装置; 在衬底上形成有量子阱结构的半导体层,其中半导体层通过交替层叠阱层和阻挡层而形成,并且至少这些层中的势垒层包含磁离子; 以及向半导体层施加电场的电极。 沿预定方向极化的光被输入到半导体层。 对半导体层施加磁场。 通过电极将电场施加到半导体层。 提取在半导体层中透过的光。 阱层中的载流子的波函数的泄漏程度变化。 通过载流子自旋与与磁离子相关的磁矩之间的交换相互作用,载流子自旋感觉到的有效磁场变化。 因此,给予透射光的磁光效应程度改变。 电磁效应的程度可以通过施加的电场来控制。 磁光装置优选地用作光通信或光存储器领域中的光调制器或光隔离器。
    • 8. 发明授权
    • Electron wave interference devices, methods for modulating an
interference current and electron wave branching and/or combining
devices and methods therefor
    • 电波干扰装置,用于调制干扰电流的方法和电子波分支和/或组合装置及其方法
    • US5371388A
    • 1994-12-06
    • US208196
    • 1994-03-10
    • Hitoshi Oda
    • Hitoshi Oda
    • H01L29/66H01L27/14H01L31/00
    • B82Y10/00H01L29/66977
    • An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating electrons from the source electrode to the drain electrode and a gate electrode provided on a halfway portion of the channel means between the source electrode and the drain electrode for dividing the channel means into plural channels solely in the halfway portion of the channel means. A positional relationship between the channel means and the gate electrode is set so that a depletion layer is extended under the gate electrode toward the channel means by applying a given voltage to the gate electrode. The depletion layer extended through the channel means forms an island which inhibits the propagation of electrons in the channel means and thus divides the channel means into the plural channels.
    • 电子波干涉装置包括用于注入电子的源电极,用于从其中取出电子的漏电极,用于将电子从源极传播到漏电极的通道装置和设置在通道的中途部分上的栅电极, 源极电极和漏极电极,用于仅在通道装置的中途部分将通道装置分成多个通道。 设置通道装置和栅电极之间的位置关系,以便通过向栅电极施加给定的电压使耗尽层在栅电极下延伸到沟道装置。 通过通道装置延伸的耗尽层形成抑制通道装置中的电子传播的岛,从而将通道装置分成多个通道。