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1. 发明授权

US5840369A Polyimide precursor composition, polyimide composition, process for the production of said polyimide precursor composition, and process for the production of said polymide composition 失效
标题翻译：聚酰亚胺前体组合物，聚酰亚胺组合物，用于制备所述聚酰亚胺前体组合物的方法，以及制备所述聚酰亚胺组合物的方法
公开(公告)号：US5840369A
公开(公告)日：1998-11-24
申请号：US819941
申请日：1997-03-18
申请人： Masamichi Maruta , Hidehisa Nanai , Yoshihiro Moroi , Hiroshi Takahashi , Seiji Hasegawa
发明人： Masamichi Maruta , Hidehisa Nanai , Yoshihiro Moroi , Hiroshi Takahashi , Seiji Hasegawa
IPC分类号： B41M1/12 , B41M7/00 , C08G73/10 , C08G73/12 , C09D11/033 , C09D11/10 , C09D11/102 , H01L23/498 , H01L23/532 , H05K3/28 , B05D1/32
CPC分类号： B41M7/00 , B41M1/12 , C08G73/1032 , C08G73/1039 , C08G73/1042 , C08G73/106 , C08G73/123 , H01L23/49894 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H05K3/285
摘要： A polyimide precursor composition which is produced by (i) providing a polyamide acid solution obtained by reacting an aromatic tetracarboxylic acid component and a diamine component in the presence of an oxygen-containing solvent and (ii) subjecting said polyamide acid solution to heat treatment. The polyimide precursor composition exhibits a desirable apparent viscosity and a desirable thixotropic property and it excels in film forming ability, and because of this, it enables the formation a high quality relief pattern film with no defect and which excels in form retention by way of the screen printing. Further, the polyimide precursor composition is extremely suitable for the formation of a relief pattern by way of screen printing in the production of electronic, electric, optical, or precision devices, wherein the relief pattern is required to have a reduced dielectric constant and a reduced residual stress and to have a sufficient heat resistance, moisture resistance, physical strength, and chemical stability.
摘要翻译：一种聚酰亚胺前体组合物，其通过（i）在含氧溶剂的存在下提供通过使芳族四羧酸组分和二胺组分反应获得的聚酰胺酸溶液和（ii）使所述聚酰胺酸溶液进行热处理而制备。聚酰亚胺前体组合物表现出理想的表观粘度和理想的触变性，并且成膜性优异，因此能够形成无缺陷的高品质浮雕图案膜，并且通过丝网印刷。此外，聚酰亚胺前体组合物非常适合于在电子，电学，光学或精密器件的制造中通过丝网印刷形成凸版图案，其中需要浮雕图案具有降低的介电常数和减小的残余应力，并具有足够的耐热性，耐湿性，物理强度和化学稳定性。

2. 发明授权

US5686525A Polyimide precursor composition and the production of said polyimide precursor composition 失效
标题翻译：聚酰亚胺前体组合物和所述聚酰亚胺前体组合物的制备
公开(公告)号：US5686525A
公开(公告)日：1997-11-11
申请号：US615991
申请日：1996-03-14
申请人： Masamichi Maruta , Hidehisa Nanai , Yoshihiro Moroi , Hiroshi Takahashi , Seiji Hasegawa
发明人： Masamichi Maruta , Hidehisa Nanai , Yoshihiro Moroi , Hiroshi Takahashi , Seiji Hasegawa
IPC分类号： B41M1/12 , B41M7/00 , C08G73/10 , C08G73/12 , C09D11/033 , C09D11/10 , C09D11/102 , H01L23/498 , H01L23/532 , H05K3/28 , C08L79/08 , B05D1/32 , C08G69/26
CPC分类号： B41M7/00 , B41M1/12 , C08G73/1032 , C08G73/1039 , C08G73/1042 , C08G73/106 , C08G73/123 , H01L23/49894 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , H05K3/285
摘要： A polyimide precursor composition which is produced by (i) providing a polyamide acid solution obtained by reacting an aromatic tetracarboxylic acid component and a diamine component in the presence of an oxygen-containing solvent and (ii) subjecting said polyamide acid solution to heat treatment. The polyimide precursor composition exhibits a desirable apparent viscosity and a desirable thixotropic property and it excels in film forming ability, and because of this, it enables the formation a high quality relief pattern film with no defect and which excels in form retention by way of the screen printing. Further, the polyimide precursor composition is extremely suitable for the formation of a relief pattern by way of the screen printing in production of electronic, electric, optical, or precision devices, wherein the relief pattern is required to have a reduced dielectric constant and a reduced residual stress and to have a sufficient heat resistance, moisture resistance, physical strength, and chemical stability.
摘要翻译：一种聚酰亚胺前体组合物，其通过（i）在含氧溶剂的存在下提供通过使芳族四羧酸组分和二胺组分反应获得的聚酰胺酸溶液和（ii）使所述聚酰胺酸溶液进行热处理而制备。聚酰亚胺前体组合物表现出理想的表观粘度和理想的触变性，并且成膜性优异，因此能够形成无缺陷的高品质浮雕图案膜，并且通过丝网印刷。此外，聚酰亚胺前体组合物非常适合于在电子，电，光学或精密装置的生产中通过丝网印刷形成凸版图案，其中需要浮雕图案具有降低的介电常数和降低的残余应力，并具有足够的耐热性，耐湿性，物理强度和化学稳定性。

3. 发明授权

US5478918A Low stress polyimide composition and precursor composition solution of same 失效
标题翻译：低应力聚酰亚胺组合物和前体组合物溶液相同
公开(公告)号：US5478918A
公开(公告)日：1995-12-26
申请号：US189774
申请日：1994-02-01
申请人： Masamichi Maruta , Hidehisa Nanai , Yoshihiro Moroi , Hiroshi Takahashi , Seiji Hasegawa
发明人： Masamichi Maruta , Hidehisa Nanai , Yoshihiro Moroi , Hiroshi Takahashi , Seiji Hasegawa
IPC分类号： C08G73/10 , C08G73/12 , C08L79/04 , C08L79/08
CPC分类号： C08G73/106 , C08G73/1039 , C08G73/121 , C08L79/08 , C08L79/085
摘要： A polyimide precursor composition solution includes a tetracarboxylic acid component containing not less than 70 mol % of at least one selected from the group consisting of benzenetetracarboxylic acid and its reactive derivatives; a maleimide compound; and a diamine component containing not less than 70 mol % of 2,2'-substituted-4,4'-benzidine represented by the general formula (I) and siloxydiamine amounting to from 1 to 10 mol %. The tetracarboxylic acid component, the maleimide compound and the diamine component are dissolved in a solvent which is consisting essentially of .gamma.-butyrolactone. The amount of the tetracarboxylic acid component is substantially equivalent to that of the diamine component. The amount of the maleimide compound is from 5 to 30 wt % of the total weight of the tetracarboxylic acid and the diamine component. A polyimide coating film prepared from the polyamide precursor solution is very low in residual stress and superior in adhesion to a substrate, has a very flat surface and can be desirably treated by wet etching process with an etching solution which is not hazardous. ##STR1## wherein R are the same or different ones selected from the group consisting of CF.sub.3, CH.sub.3, C.sub.2 H.sub.5, OCH.sub.3, OC.sub.2 H.sub.5, Cl, Br and phenyl group.
摘要翻译：聚酰亚胺前体组合物溶液包括含有不少于70mol％的选自苯四甲酸及其活性衍生物中的至少一种的四羧酸组分; 马来酰亚胺化合物; 和含有不少于70摩尔％的由通式（I）表示的2,2'-取代-4,4'-联苯胺和1〜10摩尔％的硅氧酰胺的二胺成分。将四羧酸组分，马来酰亚胺化合物和二胺组分溶解在基本上由γ-丁内酯组成的溶剂中。四羧酸组分的量基本上等于二胺组分的量。马来酰亚胺化合物的量为四羧酸和二胺成分总重量的5〜30重量％。由聚酰胺前体溶液制备的聚酰亚胺涂膜的残留应力非常低，并且对基材的粘合性优异，具有非常平坦的表面，并且可以通过湿法蚀刻工艺优选用不危险的蚀刻溶液处理。（I）其中R是选自CF 3，CH 3，C 2 H 5，OCH 3，OC 2 H 5，Cl，Br和苯基的相同或不同的基团。

4. 发明授权

US06750320B2 Process for producing polyimide platy object 失效
标题翻译：生产聚酰亚胺板状物体的方法
公开(公告)号：US06750320B2
公开(公告)日：2004-06-15
申请号：US10078265
申请日：2002-02-20
申请人： Yoshihiro Moroi , Hidehisa Nanai , Yuji Yamamoto , Shigeki Sakaguchi
发明人： Yoshihiro Moroi , Hidehisa Nanai , Yuji Yamamoto , Shigeki Sakaguchi
IPC分类号： B32B2700
CPC分类号： B29C41/003 , B29C41/12 , B29C67/246 , B29K2079/08 , B29K2105/0073 , B29L2011/00 , Y10T428/31721
摘要： A process for producing a polyimide platy object includes (a) providing a solution containing a solvent and a solute (i.e., a polyimide precursor or polyimide); (b) pouring the solution onto a supporting member; (c) removing a portion of the solvent from the solution at a first temperature lower than boiling point of the solvent, thereby forming a precursory platy object thereon, the precursory platy object having a self-supporting property and a first surface in contact with the supporting member and a second surface away therefrom and a first content of the solvent at the first surface and a second content (less than the first content by 2-10 wt %) of the solvent at the second surface; and (d) detaching the precursory platy object therefrom; and (e) heating the precursory platy object at a second temperature higher than boiling point of the solvent and is lower than decomposition temperature of the polyimide.
摘要翻译：制备聚酰亚胺板状物体的方法包括（a）提供含有溶剂和溶质（即聚酰亚胺前体或聚酰亚胺）的溶液; （b）将溶液倾倒到支撑构件上; （c）在低于溶剂沸点的第一温度下从溶液中除去一部分溶剂，从而在其上形成前体片状物体，所述前体片状物体具有自支撑性质和与所述第一表面接触的第一表面支撑构件和离开其的第二表面和第一表面处的溶剂的第一含量和第二表面处的溶剂的第二含量（小于第一含量2-10重量％）; 和（d）从其中分离前体片状物体; 和（e）在高于溶剂沸点的第二温度下加热前体片状物体，并且低于聚酰亚胺的分解温度。

5. 发明申请

US20100172620A1 Optical Axis Converting Element and Method for Manufacturing the Same 审中-公开
标题翻译：光轴转换元件及其制造方法
公开(公告)号：US20100172620A1
公开(公告)日：2010-07-08
申请号：US12602018
申请日：2008-05-29
申请人： Hidehisa Nanai
发明人： Hidehisa Nanai
IPC分类号： G02B6/10 , G02B6/04
CPC分类号： G02B6/12002 , G02B6/122 , G02B6/13
摘要： Disclosed in a multichannel optical waveguide device characterized by comprising: a structure including a cladding and having a light-incident end surface, a light-outgoing end surface, and a plurality of flat reflection surfaces located parallel with each other; and L-shaped cores embedded in the cladding, the L-shaped cores being three-dimensionally arranged parallel with each other in m rows and n columns (where m and n are 2 or more), each L-shaped core having end faces which are exposed respectively to the light-incident end surface and the light-outgoing end surface, m number of the L-shaped cores in each column guiding light from the light-incident end surface to the light-outgoing end surface by changing direction of light on n number of the flat reflection surfaces, wherein an interval between the two adjacent cores on the light-incoming end surface is different from an interval between the two adjacent cores on the light-outgoing end surface, the two adjacent cores on the light-incoming end surface respectively corresponding to the two adjacent cores on the light-outgoing end surface.
摘要翻译：本发明涉及一种多通道光波导器件，其特征在于包括：具有包层的结构，具有光入射端面，发光端面以及平行的多个平面反射面; 嵌入在包层中的L字形芯，L字形芯彼此平行地排列成m行n列（其中m和n为2以上），每个L形磁芯的端面为分别暴露于光入射端面和发光端面，每列中的L数个芯的m个数通过改变光的方向将来自光入射端面的光引导到出光端面在n个平面反射面上，其中光入射端面上的两个相邻的芯之间的间隔与发光端面上的两个相邻的芯之间的间隔不同，入射端面分别对应于光出射端面上的两个相邻的芯。

6. 发明授权

US09053924B2 Cleaning agent for silicon wafer 有权
标题翻译：硅晶片清洗剂
公开(公告)号：US09053924B2
公开(公告)日：2015-06-09
申请号：US12898185
申请日：2010-10-05
申请人： Soichi Kumon , Takashi Saio , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu , Shigeo Hamaguchi , Kazuhiko Maeda
发明人： Soichi Kumon , Takashi Saio , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu , Shigeo Hamaguchi , Kazuhiko Maeda
IPC分类号： H01L21/02 , B08B3/00 , C11D3/16 , C11D7/50 , H01L21/00 , C09D183/04
CPC分类号： H01L21/02052 , B08B3/00 , C09D183/04 , C11D3/162 , C11D7/5022 , H01L21/00 , H01L21/02054
摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.
摘要翻译：一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。

7. 发明授权

US08932390B2 Liquid chemical for forming protecting film 有权
标题翻译：用于形成保护膜的液体化学品
公开(公告)号：US08932390B2
公开(公告)日：2015-01-13
申请号：US13348268
申请日：2012-01-11
申请人： Takashi Saio , Soichi Kumon , Masanori Saito , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Takashi Saio , Soichi Kumon , Masanori Saito , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu
IPC分类号： C09K3/18 , H01L21/02
CPC分类号： H01L21/02068 , C11D11/0047
摘要： Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].
摘要翻译：公开了一种用于形成防水保护膜的液体化学品。液体化学品含有形成防水保护膜的试剂和溶剂。该试剂用于在晶片的清洁步骤之后并且在用于晶片的干燥步骤之前在晶片上形成防水保护膜，所述晶片在其表面处具有不均匀图案并且包含至少一种钛元素，钨，铝，铜，锡，钽和钌在凹凸图案的凹部的表面处，至少在凹部的表面上形成防水保护膜。液体化学品的特征在于用于形成防水保护膜的试剂是由以下通式[1]表示的化合物。

8. 发明授权

US08828144B2 Process for cleaning wafers 有权
标题翻译：清洗晶圆的工艺
公开(公告)号：US08828144B2
公开(公告)日：2014-09-09
申请号：US13350007
申请日：2012-01-13
申请人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Hidehisa Nanai , Yoshinori Akamatsu
发明人： Soichi Kumon , Takashi Saio , Shinobu Arata , Masanori Saito , Hidehisa Nanai , Yoshinori Akamatsu
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01L21/02057
摘要： A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.
摘要翻译：一种在其表面上清洁具有不均匀图案的晶片的方法。该方法至少包括以下步骤：用清洗液清洗晶片; 在清洁后用拒水液体化学品代替保留在晶片的凹陷部分中的清洁液体; 干燥晶片，其中，所述清洗液含有80质量％以上的沸点为55〜200℃的溶剂，其中，所述取代工序中供给的所述憎水性液体化学物质的温度不低于 40℃以下，并且低于防水液体化学品的沸点，从而至少对凹部的表面赋予防水性。

9. 发明申请

US20130104931A1 Liquid Chemical for Forming Protective Film, and Cleaning Method for Wafer Surface 审中-公开
标题翻译：用于形成保护膜的液体化学品和晶片表面的清洁方法
公开(公告)号：US20130104931A1
公开(公告)日：2013-05-02
申请号：US13807708
申请日：2011-06-15
申请人： Shinobu Arata , Masanori Saito , Takashi Saio , Soichi Kumon , Hidehisa Nanai
发明人： Shinobu Arata , Masanori Saito , Takashi Saio , Soichi Kumon , Hidehisa Nanai
IPC分类号： C09D5/38
CPC分类号： C09D5/38 , H01L21/02068 , H01L21/321
摘要： Disclosed is a liquid chemical for forming a water repellent protective film at least on surfaces of recessed portions of a metal-based wafer, the liquid chemical for forming a water repellent protective film being characterized by comprising a surfactant which has an HLB value of 0.001-10 according to Griffin's method and includes a hydrophobic moiety having a C6-C18 hydrocarbon group and water, and characterized in that the concentration of the surfactant in the liquid chemical is not smaller than 0.00001 mass % and not larger than the saturated concentration relative to 100 mass % of the total amount of the liquid chemical. This liquid chemical can improve a cleaning step which tends to induce a metal-based wafer to cause a pattern collapse.
摘要翻译：公开了一种用于在至少在金属基晶片的凹部的表面上形成防水保护膜的液体化学品，用于形成防水保护膜的液体化学品的特征在于包含HLB值为0.001- 10，根据Griffin的方法，包括具有C6-C18烃基和水的疏水部分，其特征在于，液体化学品中表面活性剂的浓度不小于0.00001质量％且不大于相对于100的饱和浓度液体化学品总量的质量％。这种液体化学品可以改善易于引起金属基晶片导致图案塌陷的清洁步骤。

10. 发明申请

US20110214685A1 Cleaning Agent For Silicon Wafer 有权
标题翻译：硅晶片清洗剂
公开(公告)号：US20110214685A1
公开(公告)日：2011-09-08
申请号：US12898185
申请日：2010-10-05
申请人： Soichi KUMON , Takashi Saio , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu , Shigeo Hamaguchi , Kazuhiko Maeda
发明人： Soichi KUMON , Takashi Saio , Shinobu Arata , Hidehisa Nanai , Yoshinori Akamatsu , Shigeo Hamaguchi , Kazuhiko Maeda
IPC分类号： B08B3/00 , C11D3/20
CPC分类号： H01L21/02052 , B08B3/00 , C09D183/04 , C11D3/162 , C11D7/5022 , H01L21/00 , H01L21/02054
摘要： A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.
摘要翻译：一种用于硅晶片（第一清洁剂）的清洁剂至少含有一种水基清洗液和一种防水清洗液，用于在清洁过程中至少提供具有防水性的凹凸图案的凹陷部分。水性清洗液是将具有与硅晶片中的Si元素和疏水性基团化学结合的反应性部分的防水化合物和至少含有醇溶剂的有机溶剂混合并包含的液体。利用该清洁剂，可以提高倾向于引起图案塌陷的清洁处理。

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