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    • 2. 发明授权
    • Semiconductor circuit device including an overvoltage protection element
    • 包括过电压保护元件的半导体电路装置
    • US4672402A
    • 1987-06-09
    • US912673
    • 1986-09-25
    • Masami YamaokaYukio TsuzukiShoji Toyoshima
    • Masami YamaokaYukio TsuzukiShoji Toyoshima
    • H01L29/73H01L21/331H01L29/866H01L29/868H01L29/90
    • H01L29/868
    • In a semiconductor circuit device having a diode as an overvoltage protection element, a semiconductor substrate is comprised of an N-type collector substrate integral with a transistor. An N.sup.+ type collector diffusion layer is formed on the rear surface of the substrate. A P-type anode region and a N.sup.+ cathode region are formed in the major surface of the substrate so that they are spaced apart from each other and the N.sup.+ cathode region has the same type of impurity, but at a higher impurity concentration level than, the semiconductor substrate. An insulating film is formed on the surface of the resultant structure. A gate electrode is formed in an overlapping relation to the anode region and cathode region with an insulating film therebetween. A gate potential is established between the gate electrode and the underlying substrate.
    • 在具有二极管作为过电压保护元件的半导体电路器件中,半导体衬底由与晶体管集成的N型集电极基板构成。 在基板的背面形成有N +型集电极扩散层。 在基板的主表面上形成P型阳极区域和N +阴极区域,使得它们彼此间隔开,并且N +阴极区域具有相同类型的杂质,但是在较高的杂质浓度水平下, 半导体衬底。 在所得结构的表面上形成绝缘膜。 与阳极区域和阴极区域之间具有绝缘膜的重叠关系形成栅电极。 在栅极电极和下面的衬底之间建立栅极电位。
    • 3. 发明授权
    • Semiconductor device including overvoltage protection diode
    • 半导体器件包括过压保护二极管
    • US5596217A
    • 1997-01-21
    • US407157
    • 1989-09-14
    • Masami YamaokaShoji Toyoshima
    • Masami YamaokaShoji Toyoshima
    • H01L27/02H01L29/739H01L29/866
    • H01L29/866H01L27/0248H01L29/7391
    • A semiconductor device includes a diode element for protecting a transistor against an overvoltage. A first region of p-type conductivity is formed on an upper surface of an n-type semiconductor substrate in which base and emitter regions of the transistor are formed. A second region of n.sup.+ -type conductivity whose impurity concentration is higher than that of the n-type semiconductor substrate is formed on its upper surface to be spaced apart from the first region. An insulating film is formed to cover the upper surface of the semiconductor substrate. Furthermore, a conductive film is formed to partially overlap the first and second regions through the insulating film. The first region serves as an anode, the second region serves as a cathode, and the conductive film serves as a gate electrode; thus an overvoltage protection diode is obtained.
    • 半导体器件包括用于保护晶体管免受过电压的二极管元件。 在形成晶体管的基极和发射极区域的n型半导体衬底的上表面上形成p型导电性的第一区域。 在其上表面上形成杂质浓度高于n型半导体衬底的n +型导电性的第二区域,以与第一区域间隔开。 形成绝缘膜以覆盖半导体衬底的上表面。 此外,形成导电膜以通过绝缘膜部分地重叠第一和第二区域。 第一区域用作阳极,第二区域用作阴极,并且导电膜用作栅电极; 从而得到过电压保护二极管。