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    • 1. 发明授权
    • Method for manufacturing bottom valve seat
    • 制造底阀座的方法
    • US4070895A
    • 1978-01-31
    • US721987
    • 1976-09-10
    • Masami YamadaYuji Soeda
    • Masami YamadaYuji Soeda
    • B21D53/10F16F9/34
    • B21D53/10F16F9/34Y10T29/49306
    • A method for manufacturing a bottom valve seat for use in a hydraulic damper is provided including the steps of: punching out a circular blank from a flat plate of a given thickness to prepare a circular blank having given dimensions; drawing the blank into a cup-shaped work having a circumferential flange portion; forming a cylindrical wall in the cup-shaped work thus provided, with the wall having a given length; and pressing the central portion of a bottom portion of the cup-shaped work downwards or internally, thereby forming an annular flat portion along the circumferential edge of the bottom portion; cutting the flange portion into given dimensions; and punching a through hole in the flange portion. In this bottom valve seat, the flange portion has a flat surface and at least one oil passage is provided in the portion of the valve seat, which is opposite to the bottom portion.
    • 一种用于制造用于液压阻尼器的底阀座的方法包括以下步骤:从给定厚度的平板上冲出圆形坯料以制备具有给定尺寸的圆形坯料; 将坯料拉成具有圆周凸缘部分的杯形工件; 在如此提供的杯形工件中形成圆柱形壁,壁具有给定的长度; 并且将杯形作业的底部的中心部分向下或向内按压,从而沿底部的周缘形成环形平坦部分; 将凸缘部分切割成给定的尺寸; 并且在凸缘部分中冲孔。 在该底阀座中,凸缘部具有平坦表面,并且在阀座的与底部相对的部分中设置有至少一个油通道。
    • 9. 发明授权
    • Light-emitting semiconductor device using group III nitride compound
    • 使用III族氮化物化合物的发光半导体器件
    • US5652438A
    • 1997-07-29
    • US504340
    • 1995-07-19
    • Michinari SassaMakoto TamakiMasayoshi KoikeNaoki ShibataMasami YamadaTakahide Oshio
    • Michinari SassaMakoto TamakiMasayoshi KoikeNaoki ShibataMasami YamadaTakahide Oshio
    • H01L33/12H01L33/32H01L33/40H01L33/62H01L33/00
    • H01L33/38H01L33/32H01L33/325H01L2224/48463H01L33/382H01L33/40
    • A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.
    • 发光半导体器件(10)连续地具有蓝宝石衬底(1),AlN缓冲层(2),高载流子(n型)掺杂的硅(Si)掺杂的GaN n +层(3), 锌(Zn)和Si掺杂(Al x Ga 1-x 1)y 1 In 1-y 1 N发射层(5)的Si掺杂(AlX2Ga1-x2)y2In1-y2N n +层(4) 和掺杂Mg的(Alx2Ga1-x2)y2In1-y2N p层(6)。 AlN缓冲层(2)具有500厚度。 GaN n +层(3)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 n +层(4)的厚度约为2.0μm,电子浓度为2×10 18 / cm 3。 发射层(5)厚约0.5μm。 p层6的厚度约为1.0μm,空穴浓度为2×10 17 / cm 3。 镍电极(7,8)分别连接到p层(6)和n +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 引线(21,22)通过楔形接合方法与电极(7,8)连接,以期望减少电极位于其上的器件的发光侧的电极的表面积,从而增加光 从设备发射。
    • 10. 发明授权
    • Photoemitter electron tube and photodetector
    • Photoemitter电子管和光电探测器
    • US5591986A
    • 1997-01-07
    • US299664
    • 1994-09-02
    • Minoru NiigakiToru HirohataTuneo IharaMasami Yamada
    • Minoru NiigakiToru HirohataTuneo IharaMasami Yamada
    • H01J1/34H01L27/14H01J31/00H01L29/49
    • H01J1/34H01J2201/3423
    • The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.
    • 本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。 本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层,层叠在光子吸收层的一个表面上的绝缘体层,层叠在绝缘体层上的引线电极和形成在 光子吸收层的另一个表面,以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压,由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成 由形成在引线电极和一个表面之间的电场发射预定的极性电压。