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1. 发明申请

US20130319953A1 BALLAST WATER TREATMENT APPARATUS AND BALLAST WATER TREATMENT METHOD 审中-公开
标题翻译：压载水处理设备和压汞处理方法
公开(公告)号：US20130319953A1
公开(公告)日：2013-12-05
申请号：US14000456
申请日：2012-07-23
申请人： Isao Ozawa , Munetsugu Ueyama , Ryusuke Nakai
发明人： Isao Ozawa , Munetsugu Ueyama , Ryusuke Nakai
IPC分类号： C02F1/00
CPC分类号： C02F1/00 , B01D29/21 , B01D29/54 , B01D29/6446 , B01D2201/583 , B63J4/002 , C02F1/004 , C02F2103/008
摘要： A ballast water treatment apparatus includes a filter that is cylindrically formed so as to surround an axis, a case that includes an outer cylindrical portion that is disposed so as to surround the filter, a rotation mechanism that rotates the filter around the axis, an untreated water nozzle that ejects untreated water to a filter-surrounding region that is defined by an outer peripheral surface of the filter and the outer cylindrical portion, a cleaning water nozzle that ejects cleaning water toward the outer peripheral surface of the filter, a filtered water channel through which filtered water that has passed through the filter flows from a region inside the filter to outside of the case, and a discharge channel through which discharged water that has not passed through the filter is discharged from the filter-surrounding region to outside of the case.
摘要翻译：一种压载水处理装置，包括以围绕轴线为圆筒状的过滤器，包括设置为围绕过滤器的外筒部的壳体，使过滤器绕轴线旋转的旋转机构，未处理水喷嘴，其将未处理的水喷射到由过滤器的外周面和外筒部限定的过滤器周围区域;清洗水喷嘴，其向清洗器的外周面排出清洗水;过滤水通道已通过过滤器的过滤水通过该过滤器从过滤器内部的区域流到壳体外部，并且未通过过滤器的排出水通过该排出通道从过滤器周围区域排出到外部案件。

2. 发明授权

US09511310B2 Device and method for treating ballast water for ship 有权
标题翻译：用于船舶压载水处理的装置和方法
公开(公告)号：US09511310B2
公开(公告)日：2016-12-06
申请号：US13580175
申请日：2011-02-16
申请人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
发明人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
IPC分类号： B01D33/70 , B01D37/00 , B01D29/21 , B01D29/64 , B01D29/74 , B01D29/92 , C02F1/32 , B01D33/073 , B01D33/39 , B01D33/46 , B01D35/30 , B63J4/00 , C02F1/00 , C02F103/00
CPC分类号： B01D29/21 , B01D29/6446 , B01D29/74 , B01D29/92 , B01D33/073 , B01D33/39 , B01D33/463 , B01D35/303 , B01D2201/583 , B63J4/002 , C02F1/001 , C02F1/325 , C02F2103/008 , C02F2209/11 , C02F2303/04 , Y02T70/36
摘要： A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.
摘要翻译：一个过滤器，其围绕轴线设置为圆柱体，并且设置成可围绕轴线旋转;处理水喷嘴，用于朝向过滤器的外周表面喷射经处理的水，设置成围绕过滤器的壳体，并且包括外部具有处理水喷嘴的喷嘴开口的圆柱形部分，用于将已经从过滤器透过过滤器的过滤水引导到过滤器的气缸内部的过滤水流路和用于排出的排出流体还提供了没有通过过滤器过滤到壳体外部的水。

3. 发明申请

US20120312757A1 DEVICE AND METHOD FOR TREATING BALLAST WATER FOR SHIP 有权
标题翻译：用于船舶处理压载水的装置和方法
公开(公告)号：US20120312757A1
公开(公告)日：2012-12-13
申请号：US13580175
申请日：2011-02-16
申请人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
发明人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
IPC分类号： B01D33/70 , B01D37/00 , B01D33/35
CPC分类号： B01D29/21 , B01D29/6446 , B01D29/74 , B01D29/92 , B01D33/073 , B01D33/39 , B01D33/463 , B01D35/303 , B01D2201/583 , B63J4/002 , C02F1/001 , C02F1/325 , C02F2103/008 , C02F2209/11 , C02F2303/04 , Y02T70/36
摘要： A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.
摘要翻译：一个过滤器，其围绕轴线设置为圆柱体，并且设置成可围绕轴线旋转;处理水喷嘴，用于朝向过滤器的外周表面喷射经处理的水，设置成围绕过滤器的壳体，并且包括外部具有处理水喷嘴的喷嘴开口的圆柱形部分，用于将已经从过滤器透过过滤器的过滤水引导到过滤器的气缸内部的过滤水流路和用于排出的排出流体还提供了没有通过过滤器过滤到壳体外部的水。

4. 发明授权

US4863554A Process for pulling a single crystal 失效
标题翻译：拉制单晶的工艺
公开(公告)号：US4863554A
公开(公告)日：1989-09-05
申请号：US17072
申请日：1987-02-20
申请人： Akihisa Kawasaki , Toshihiro Kotani , Ryusuke Nakai , Shintaro Miyazawa , Keigo Hoshikawa
发明人： Akihisa Kawasaki , Toshihiro Kotani , Ryusuke Nakai , Shintaro Miyazawa , Keigo Hoshikawa
IPC分类号： C30B15/14 , C30B27/02 , H01L21/208
CPC分类号： C30B15/14
摘要： An apparatus for pulling a single crystal by CZ method or LEC method is improved. To this end, the heater for heating the inside of the furnace is divided at least in the vicinity of the solid-liquid interface into at least two heaters. Using this apparatus, a single crystal with a decreased dislocation density can be obtained.
摘要翻译：通过CZ法或LEC法提取单晶的装置得到改善。为此，用于加热炉内部的加热器至少在固 - 液界面附近分成至少两个加热器。使用该装置，可以获得具有降低的位错密度的单晶。

5. 发明申请

US20120118824A1 WATER TREATMENT APPARATUS AND WATER TREATMENT METHOD 审中-公开
标题翻译：水处理设备和水处理方法
公开(公告)号：US20120118824A1
公开(公告)日：2012-05-17
申请号：US13297706
申请日：2011-11-16
申请人： Hideki KASHIHARA , Ryusuke Nakai , Shuji Hahakura , Satoshi Yahagi
发明人： Hideki KASHIHARA , Ryusuke Nakai , Shuji Hahakura , Satoshi Yahagi
IPC分类号： C02F1/44 , B01D71/26 , B01D71/34 , B01D69/02 , B01D71/36
CPC分类号： C02F1/441 , B01D61/00 , B01D61/025 , B01D61/145 , B01D61/147 , B01D61/58 , B01D65/02 , B01D69/02 , B01D71/34 , B01D71/36 , B01D2321/04 , B01D2321/2058 , B01D2321/2075 , B01D2325/02 , B01D2325/38 , C02F1/444 , C02F2103/06 , C02F2103/08 , C02F2301/08 , C02F2303/24 , Y02A20/131
摘要： There is provided a water treatment apparatus, including: first membrane filtration means in which a filtration membrane having an average pore diameter of 1 μm or more is used; second membrane filtration means for treating water filtered by the first membrane filtration means, by using a microfiltration membrane or ultrafiltration membrane; and reverse osmosis membrane filtration means for treating water filtered by the second membrane filtration means. In particular, there is provided a water treatment apparatus, wherein a hydrophobic polymer membrane that is not subjected to hydrophilicizing processing is used as the filtration membrane having an average pore diameter of 1 μm or more. There is also provided a water treatment method that can be implemented by these water treatment apparatuses.
摘要翻译：提供了一种水处理装置，包括：第一膜过滤装置，其中使用平均孔径为1μm以上的过滤膜; 第二膜过滤装置，用于处理由第一膜过滤装置过滤的水，通过使用微滤膜或超滤膜; 以及用于处理由第二膜过滤装置过滤的水的反渗透膜过滤装置。特别地，提供了一种水处理装置，其中使用不进行亲水化处理的疏水性聚合物膜作为平均孔径为1μm以上的过滤膜。还提供了可以通过这些水处理装置实施的水处理方法。

6. 发明授权

US06180269B2 GaAs single crystal substrate and epitaxial wafer using the same 有权
标题翻译： GaAs单晶衬底和使用其的外延晶片
公开(公告)号：US06180269B2
公开(公告)日：2001-01-30
申请号：US09334215
申请日：1999-06-16
申请人： Yoshiaki Hagi , Ryusuke Nakai
发明人： Yoshiaki Hagi , Ryusuke Nakai
IPC分类号： B32B900
CPC分类号： H01L21/0262 , C30B11/00 , C30B29/42 , H01L21/02395 , H01L21/02463 , H01L21/02546 , Y10T428/265
摘要： A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2×104 cm−2, a carbon concentration of 2.5 to 20.0×1015 cm−3, a boron concentration of 2.0 to 20.0×1016 cm−3, an impurity concentration other than carbon and boron of at most 1×1017 cm−3, an EL2 concentration of 5.0 to 10.0×1015 cm−3, resistivity of 1.0 to 5.0×108 &OHgr;·cm and a mean residual strain measured by photoelastic analysis of at most 1.0×10−5.
摘要翻译： GaAs单晶衬底和使用其的外延晶片抑制外延层生长期间的滑移的产生，并且改善在这种衬底上制造的器件的击穿耐受特性。 GaAs单晶基板的平面位错密度为2×104cm-2以下，碳浓度为2.5〜20.0×10 15 cm -3，硼浓度为2.0〜20.0×10 16 cm -3，碳以外的杂质浓度和至多1×10 17 cm -3的硼，EL 2浓度为5.0至10.0×10 15 cm -3，电阻率为1.0至5.0×10 8ΩEGA.cm，通过光弹性分析测量的平均残余应变为至多1.0×10 -5。

7. 发明授权

US4634490A Method of monitoring single crystal during growth 失效
标题翻译：生长过程中监测单晶的方法
公开(公告)号：US4634490A
公开(公告)日：1987-01-06
申请号：US679895
申请日：1984-12-10
申请人： Masami Tatsumi , Shin-ichi Sawada , Ryusuke Nakai
发明人： Masami Tatsumi , Shin-ichi Sawada , Ryusuke Nakai
IPC分类号： C30B15/26 , G01N23/207
CPC分类号： C30B15/26 , G01N23/207
摘要： Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.
摘要翻译：生长期间的单晶由切割的X射线束照射，并且来自晶体的衍射X射线束以二维方式由图像放大器监测，使得衍射的X射线可被图像放大器监测，即使发生晶体直径的变化。生长期间单晶的一半部分被切割的X射线束照射，并且晶体的另一半部分在晶体的整个高度上被X射线束照射，使得晶体生长的Laue斑点被显示在图像放大器的显示器的一半部分上，并且在图像放大器的显示器的另一半部分中监视被上拉的晶体的形状。

8. 发明授权

US4556784A Method for controlling vertically arranged heaters in a crystal pulling device 失效
标题翻译：用于在拉晶装置中控制垂直排列的加热器的方法
公开(公告)号：US4556784A
公开(公告)日：1985-12-03
申请号：US539905
申请日：1983-10-07
申请人： Ryusuke Nakai
发明人： Ryusuke Nakai
IPC分类号： C30B15/14 , C30B15/20 , C30B27/02 , F27B14/00
CPC分类号： C30B15/14 , C30B15/20
摘要： In the pulling of a single crystal from a melt by the Czochralski method the temperature of the melt and the crystal is controlled by a plurality of heaters surrounding the crucible in vertically disposed relation relative to each other. The lowermost heater is controlled by an automatic temperature controller in response to the temperature of the bottom of the crucible and the remaining heaters are controlled by the selectring a specific ratio for the power supply of each of the remaining heaters with respect to the power supply of the lowermost heater.
摘要翻译：在通过切克劳斯基法从熔体中拉出单晶时，熔体和晶体的温度由围绕坩埚的多个加热器以彼此垂直设置的关系来控制。最低的加热器由自动温度控制器控制，响应于坩埚底部的温度，剩余的加热器通过选择来控制每个剩余加热器的电源相对于电源的电源的特定比例最低的加热器。

9. 发明申请

US20120074059A1 CLEANING METHOD FOR FILTRATION MEMBRANE AND MEMBRANE FILTRATION APPARATUS 审中-公开
标题翻译：用于过滤膜和膜过滤装置的清洁方法
公开(公告)号：US20120074059A1
公开(公告)日：2012-03-29
申请号：US13242528
申请日：2011-09-23
申请人： Shuji HAHAKURA , Hideki Kashihara , Satoshi Yahagi , Ryusuke Nakai
发明人： Shuji HAHAKURA , Hideki Kashihara , Satoshi Yahagi , Ryusuke Nakai
IPC分类号： B01D65/06 , B01D71/32 , B01D71/26
CPC分类号： C02F1/44 , B01D65/02 , B01D2313/12 , B01D2321/04 , B01D2321/168 , B01D2321/185 , C02F1/441 , C02F1/444 , C02F2103/008 , C02F2103/08 , C02F2303/16
摘要： There is provided a cleaning method for a hydrophobic filtration membrane used for membrane filtration of water to be treated such as seawater, discharged water and ballast water including a jelly-like suspended substance and clogged with the suspended substance in the water to be treated, the filtration membrane being brought into contact with limonene-containing water, or backwashing of the filtration membrane with a cleaning liquid being done, and then, a flow having air taken therein being applied onto a surface of the filtration membrane or a water stream from an eductor nozzle being sprayed onto the filtration membrane. There is also provided a membrane filtration apparatus capable of efficiently performing the above-mentioned cleaning method.
摘要翻译：本发明提供一种用于对被处理水进行膜过滤的疏水性过滤膜的清洗方法，例如海水，排出水和包含果冻状悬浮物质的压载水，并将被悬浮物质堵塞在被处理水中，过滤膜与含柠檬烯的水接触，或者用完成的清洗液对过滤膜进行反冲洗，然后将其中吸入的空气的流量施加到过滤膜的表面或来自喷射器的水流喷嘴喷射到过滤膜上。还提供了能够有效地进行上述清洗方法的膜过滤装置。

10. 发明授权

US4636280A Method for the pretreatment of a substrate for ion implantation 失效
标题翻译：离子注入用基板预处理方法
公开(公告)号：US4636280A
公开(公告)日：1987-01-13
申请号：US643034
申请日：1984-08-21
申请人： Ryusuke Nakai , Toshihiko Takebe , Hajime Yamazaki
发明人： Ryusuke Nakai , Toshihiko Takebe , Hajime Yamazaki
IPC分类号： H01L21/265 , H01L21/322 , C30B1/02
CPC分类号： H01L21/265 , H01L21/26546 , H01L21/3225
摘要： An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.
摘要翻译：具有均匀杂质分布的IC晶片通过预处理获得，包括在高温下长时间退火半导体衬底，然后在IC处理之前快速冷却。

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