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1. 发明授权

US07138715B2 Interconnect, interconnect forming method, thin film transistor, and display device 有权
标题翻译：互连，互连形成方法，薄膜晶体管和显示装置
公开(公告)号：US07138715B2
公开(公告)日：2006-11-21
申请号：US10974722
申请日：2004-10-28
申请人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
发明人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , H01L21/4846 , H01L23/498 , H01L27/12 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.
摘要翻译：根据本发明的互连形成方法包括在绝缘膜上形成用于金属扩散的阻挡膜的步骤，使用化学镀处理在用于金属扩散的阻挡膜上选择性地形成金属籽晶层的步骤，使用电镀工艺在所述金属种子层上选择性地形成金属导电层，以及使用所述金属导电层作为掩模来蚀刻用于金属扩散的阻挡膜的步骤。

2. 发明授权

US06890849B2 Interconnect, interconnect forming method, thin film transistor, and display device 有权
公开(公告)号：US06890849B2
公开(公告)日：2005-05-10
申请号：US10660702
申请日：2003-09-12
申请人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
发明人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
IPC分类号： G02F1/136 , H01L21/336 , H01L21/48 , H01L23/498 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/40
CPC分类号： H01L29/4908 , H01L21/4846 , H01L23/498 , H01L27/12 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.

3. 发明申请

US20050082538A1 Interconnect, interconnect forming method, thin film transistor, and display device 有权
标题翻译：互连，互连形成方法，薄膜晶体管和显示装置
公开(公告)号：US20050082538A1
公开(公告)日：2005-04-21
申请号：US10974722
申请日：2004-10-28
申请人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
发明人： Masaki Kado , Shigeru Aomori , Yoshitaka Yamamoto
IPC分类号： G02F1/136 , H01L21/336 , H01L21/48 , H01L23/498 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/04
CPC分类号： H01L29/4908 , H01L21/4846 , H01L23/498 , H01L27/12 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An interconnect forming method according to the present invention includes a step of forming a barrier film for metal diffusion on an insulator film, a step of selectively forming a metal seed layer on the barrier film for metal diffusion using an electroless plating process, a step of selectively forming a metal conductive layer on the metal seed layer using an electroplating process, and a step of etching the barrier film for metal diffusion using the metal conductive layer as a mask.
摘要翻译：根据本发明的互连形成方法包括在绝缘膜上形成用于金属扩散的阻挡膜的步骤，使用化学镀处理在用于金属扩散的阻挡膜上选择性地形成金属籽晶层的步骤，使用电镀工艺在所述金属种子层上选择性地形成金属导电层，以及使用所述金属导电层作为掩模来蚀刻用于金属扩散的阻挡膜的步骤。

4. 发明授权

US09048453B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09048453B2
公开(公告)日：2015-06-02
申请号：US13627205
申请日：2012-09-26
申请人： Takuya Kawata , Hisao Ikeda , Manabu Niboshi , Seiichi Mitsui , Yoshitaka Yamamoto
发明人： Takuya Kawata , Hisao Ikeda , Manabu Niboshi , Seiichi Mitsui , Yoshitaka Yamamoto
IPC分类号： H01L51/52
CPC分类号： H01L51/5209 , H01L51/5275 , H01L51/5278
摘要： To provide a light-emitting device which can emit bright light without increasing the projected area of a light-emitting element and be manufactured with high yield. A light-emitting device of one embodiment of the present invention includes a plurality of projections; a first electrode formed along the plurality of projections; a layer containing a light-emitting organic compound formed along the plurality of projections and over the first electrode; and a second electrode formed along the plurality of projections and over the layer containing a light-emitting organic compound. Further, the plurality of projections each have a bottom surface having a side in contact with a bottom surface of an adjacent projection; a plurality of side surfaces each having a certain angle greater than 0° and less than or equal to 80° with respect to the bottom surface; and a vertex having a first continuously curved surface.
摘要翻译：本发明提供一种发光装置，其能够在不增加发光元件的投影面积的同时发出亮光，并能够以高收率制造。本发明的一个实施例的发光装置包括多个突起; 沿所述多个突起形成的第一电极; 包含沿着所述多个突起形成并在所述第一电极上方的发光有机化合物的层; 以及沿所述多个突起形成并且包含发光有机化合物的层的第二电极。此外，多个突起各自具有与相邻突起的底面接触的一侧的底面; 多个侧表面各自具有相对于底面大于0°且小于或等于80°的一定角度; 以及具有第一连续弯曲表面的顶点。

5. 发明授权

US08772752B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08772752B2
公开(公告)日：2014-07-08
申请号：US13477373
申请日：2012-05-22
申请人： Hidekazu Miyairi , Atsushi Hirose , Yoshitaka Yamamoto , Tomohiro Kimura
发明人： Hidekazu Miyairi , Atsushi Hirose , Yoshitaka Yamamoto , Tomohiro Kimura
IPC分类号： H01L47/00
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/78633 , H01L29/78648
摘要： An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other.
摘要翻译：目的是防止黑色矩阵层的宽度未扩大到设计值以上的情况下由于配准不良引起的漏光。本发明的一个实施例是一种包括单栅极薄膜晶体管的半导体器件，其中第一半导体层夹在底栅电极和第一黑矩阵层之间。第一半导体层和第一黑矩阵层彼此重叠。

6. 发明申请

US20130266843A1 POSITIVE ELECTRODE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY MODULE 有权
标题翻译：非水电解质二次电池正极，非水电解质二次电池和电池模块
公开(公告)号：US20130266843A1
公开(公告)日：2013-10-10
申请号：US13993901
申请日：2011-12-14
申请人： Tomitaro Hara , Takao Fukunaga , Takayasu Iguchi , Takao Kitagawa , Yoshitaka Yamamoto
发明人： Tomitaro Hara , Takao Fukunaga , Takayasu Iguchi , Takao Kitagawa , Yoshitaka Yamamoto
IPC分类号： H01M4/36 , H01M4/583
CPC分类号： H01M4/366 , H01M4/131 , H01M4/133 , H01M4/136 , H01M4/362 , H01M4/5825 , H01M4/583 , H01M10/052 , H01M2004/021 , Y02T10/7011
摘要： The present invention provides a positive electrode for a non-aqueous electrolyte secondary battery in which the charge/discharge rate of a secondary battery is increased by increasing the discharge/discharge rate of the positive electrode as a result of increasing the rate of incorporation and release of lithium ions in olivine-type phosphorous complex compound particles, a non-aqueous electrolyte secondary battery provided with this positive electrode for a non-aqueous electrolyte secondary battery, and a battery module provided with this non-aqueous electrolyte secondary battery. The positive electrode for a non-aqueous electrolyte secondary battery of the present invention is a positive electrode for a non-aqueous electrolyte secondary battery containing olivine-type lithium complex compound particles having a carbonaceous film formed on the surface thereof as a positive electrode active material, in which the coverage factor of the carbonaceous film relative to the surface area of the olivine-type lithium complex compound particles is preferably 95% or more, and the packed density of the olivine-type lithium complex compound particles in this positive electrode for a non-aqueous electrolyte secondary battery is preferably 0.90 g/cm3 to 1.09 g/cm3.
摘要翻译：本发明提供一种非水电解质二次电池用正极，其特征在于，通过增加所述正极的放电/放电率，通过增加所述正极的放电/放电率来提高二次电池的充放电率的橄榄石型磷配位化合物粒子中的锂离子，设置有该非水电解质二次电池用正极的非水电解质二次电池以及具备该非水电解质二次电池的电池模块。本发明的非水电解质二次电池用正极是含有在表面形成有碳膜作为正极活性物质的橄榄石型锂络合物粒子的非水电解质二次电池用正极，其中碳质膜相对于橄榄石型锂络合物颗粒的表面积的覆盖系数优选为95％以上，在该正极中的橄榄石型锂络合物粒子的填充密度为非水电解质二次电池优选为0.90g / cm 3至1.09g / cm 3。

7. 发明申请

US20100059505A1 CONTAINER FOR ELECTROMAGNETIC COOKERS 有权
标题翻译：电磁烤箱容器
公开(公告)号：US20100059505A1
公开(公告)日：2010-03-11
申请号：US12306874
申请日：2006-06-26
申请人： Hagino Fujita , Yoshitaka Yamamoto , Takayuki Aikawa , Takashi Miura , Hideo Kurashima
发明人： Hagino Fujita , Yoshitaka Yamamoto , Takayuki Aikawa , Takashi Miura , Hideo Kurashima
IPC分类号： H05B6/12
CPC分类号： A47J36/02 , B65D81/262 , B65D81/3407
摘要： [Problem] To provide a container for an electromagnetic cooker which can be heated corresponding to impedance check frequency which differs depending on a manufacturer of an electromagnetic cooker or the like, can properly and easily set a heat generation characteristic, is excellent in marketability, configuration in use, disposability, handiness in cooking and the like, is suitable for retort foods, instant foods and the like, and exhibits high heating efficiency.[Means for Resolution] A container for an electromagnetic cooker includes a container body made of a non-conductive material and a conductive layer in a bottom portion of the container, wherein the ratio of resistance change (R−R0)/R0 of the conductive layer with respect to the impedance check frequency of a heating coil is set to 5.3 or more, and a ratio of inductance change (L−L0)/L0 of the conductive layer with respect to the impedance check frequency of the heating coil is set to −0.17 or less. Here, R indicates the high-frequency resistance (Ω) on a heating coil side with a load, R0 indicates the high-frequency resistance (Ω) on the heating coil side without a load, L indicates the inductance (μH) on the heating coil side with a load, and L0 indicates the inductance (μH) on the heating coil side without a load.
摘要翻译： [问题]为了提供可根据电磁炉等的制造商等而不同的阻抗检查频率进行加热的电磁炉的容器，可以适当且容易地设定发热特性，具有优异的市场性，配置性在使用中，一次性，烹饪方便等适用于蒸煮食品，速食食品等，并且显示出高的加热效率。 [解决方法]电磁炉的容器包括由非导电材料制成的容器主体和容器底部的导电层，其中导电性的电阻变化率（R-R0）/ R0 相对于加热线圈的阻抗检查频率的层设定为5.3以上，导体层的电感变化率（L-L0）/ L0相对于加热线圈的阻抗检查频率的比率被设定为 -0.17以下。这里，R表示加热线圈侧负载时的高频电阻（＆OHgr），R0表示加热线圈侧无负载时的高频电阻（＆OHgr），L表示电感（μH）加热线圈侧为负载，L0表示加热线圈侧无负载时的电感（μH）。

8. 发明授权

US07352002B2 Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same 有权
标题翻译：包括具有不同结晶度的半导体薄膜的半导体器件及其制造方法及其制造方法及其制造方法
公开(公告)号：US07352002B2
公开(公告)日：2008-04-01
申请号：US11403938
申请日：2006-04-14
申请人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
发明人： Yoshinobu Kimura , Masakiyo Matsumura , Yoshitaka Yamamoto , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Fumiki Nakano
IPC分类号： H01L29/04
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L29/66757 , H01L29/78675
摘要： A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.
摘要翻译：制造薄膜半导体器件衬底的方法包括在基底层上形成非单晶半导体薄膜的步骤和用能量束照射非单晶半导体薄膜以提高结晶度的退火步骤构成非单晶半导体薄膜的非单晶半导体。退火步骤包括同时用多个能量束照射非单晶半导体薄膜，以形成多个单位区域，每个单位区域包括至少一个被能量束照射的照射区域和至少一个不照射的非照射区域用能量束照射。

9. 发明申请

US20070023759A1 THIN FILM TRANSISTOR, CIRCUIT APPARATUS AND LIQUID CRYSTAL DISPLAY 有权
标题翻译：薄膜晶体管，电路设备和液晶显示器
公开(公告)号：US20070023759A1
公开(公告)日：2007-02-01
申请号：US11469748
申请日：2006-09-01
申请人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
发明人： Masato Hiramatsu , Masakiyo Matsumura , Mikihiko Nishitani , Yoshinobu Kimura , Yoshitaka Yamamoto
IPC分类号： H01L29/00
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78618 , H01L29/78675
摘要： A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.
摘要翻译：薄膜晶体管包括一个导电型半导体层（11）; 源区域（12）和漏极区域（13），其分开设置在所述半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅极电极，其中，所述源极区域与所述沟道（16）之间的所述接合面的宽度（W SUB）设置在源极区域和漏极区域之间，不同于上述沟道区域和漏极区域之间的接合面的宽度（W SUB）。

10. 发明申请

US20050161676A1 Thin film semiconductor device having arrayed configuration of semiconductor crystals 审中-公开
标题翻译：具有半导体晶体排列构造的薄膜半导体器件
公开(公告)号：US20050161676A1
公开(公告)日：2005-07-28
申请号：US11062560
申请日：2005-02-23
申请人： Yoshinobu Kimura , Masakiyo Matsumura , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshitaka Yamamoto , Hideo Koseki
发明人： Yoshinobu Kimura , Masakiyo Matsumura , Mikihiko Nishitani , Masato Hiramatsu , Masayuki Jyumonji , Yoshitaka Yamamoto , Hideo Koseki
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L31/113
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/268 , H01L29/66757 , H01L29/78675
摘要： A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation. By the above order of steps, it becomes possible to obtain a thin film semiconductor device which has small numbers of crystals and less variance of grain size of crystals for each unit of electric circuit, compared with a device produced by the conventional process. Further, the process makes it possible to be even the boundary surface between the crystallized layer and the insulation layer in a device.
摘要翻译：对薄膜半导体器件的制造方法进行说明。在该方法中，沉积在玻璃基底层上的非单晶半导体薄膜层在层照射步骤之前被处理成岛形薄膜层。通过使用栅电极作为照射掩模，在岛状薄膜层上形成绝缘膜层和栅电极之后，对非单晶半导体的薄膜层进行激光照射，由此中心由栅电极掩蔽的岛状薄膜层的区域被结晶化，同时，未被栅极电极掩蔽的两侧区域退火。接下来，在退火区域中形成源电极和漏电极。杂质离子的注入可以在激光照射之前或之后进行。通过上述步骤，与通过常规方法制造的器件相比，可以获得每个电路单元具有少量晶体和较小晶体粒径变化的薄膜半导体器件。此外，该方法使得可以在器件中甚至结晶层和绝缘层之间的边界面。

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