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1. 外观设计

USD651990S1 Semiconductor manufacturing equipment 有权
公开(公告)号：USD651990S1
公开(公告)日：2012-01-10
申请号：US29371214
申请日：2010-11-29
申请人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata
设计人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata

2. 外观设计

USD652395S1 Semiconductor manufacturing equipment 有权
标题翻译：半导体制造设备
公开(公告)号：USD652395S1
公开(公告)日：2012-01-17
申请号：US29371213
申请日：2010-11-29
申请人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata
设计人： Masakazu Shimada , Takashi Nogami , Satoshi Aizawa , Seiyo Nakashima , Tomoyuki Yamada , Shinobu Sugiura , Yukinori Aburatani , Mitsuhiro Nagata

3. 发明授权

US07700054B2 Substrate processing apparatus having gas side flow via gas inlet 有权
标题翻译：具有通过气体入口的气体侧流动的基板处理装置
公开(公告)号：US07700054B2
公开(公告)日：2010-04-20
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Seiyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

4. 发明授权

US09698037B2 Substrate processing apparatus 有权
公开(公告)号：US09698037B2
公开(公告)日：2017-07-04
申请号：US13156925
申请日：2011-06-09
申请人： Seiyo Nakashima , Yuichi Matsuda , Takashi Nogami , Shinobu Sugiura , Tomoyuki Yamada
发明人： Seiyo Nakashima , Yuichi Matsuda , Takashi Nogami , Shinobu Sugiura , Tomoyuki Yamada
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67757 , H01L21/67017
摘要： A substrate processing apparatus includes a holder configured to hold a substrate and carry the substrate into a process chamber, a waiting station located outside the process chamber in which the holder waits prior to carrying the substrate into the process chamber, a circulation path configured to circulate a gas throughout the waiting station, and an exhaust path formed in the circulation path and configured to exhaust the gas from the waiting station.

5. 发明授权

US08303712B2 Substrate processing apparatus, method for manufacturing semiconductor device, and process tube 有权
标题翻译：基板处理装置，半导体装置的制造方法以及处理管
公开(公告)号：US08303712B2
公开(公告)日：2012-11-06
申请号：US12363045
申请日：2009-01-30
申请人： Seiyo Nakashima , Tomoyuki Yamada , Masakazu Shimada
发明人： Seiyo Nakashima , Tomoyuki Yamada , Masakazu Shimada
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45591 , C23C16/4584 , H01L21/67017 , H01L21/67303 , H01L21/68792
摘要： In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.
摘要翻译：在基板处理装置中，处理容器构造成容纳并处理保持在水平位置的基板。气体导入口安装在处理容器的第一侧的周边，并被构造成从衬底的横向方向将气体引入处理容器。排气口安装在与第一侧相对的处理容器的第二侧，并且构造成从衬底的横向方向排出处理容器内的气体。倾斜部分安装在处理容器内的气体导入口和排气口之间，构成为引导导入处理容器的气体的流路。

6. 发明申请

US20090197402A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESS TUBE 有权
标题翻译：基板加工装置，制造半导体装置的方法和工艺管
公开(公告)号：US20090197402A1
公开(公告)日：2009-08-06
申请号：US12363045
申请日：2009-01-30
申请人： Seiyo NAKASHIMA , Tomoyuki Yamada , Masakazu Shimada
发明人： Seiyo NAKASHIMA , Tomoyuki Yamada , Masakazu Shimada
IPC分类号： H01L21/02 , C23C16/54
CPC分类号： C23C16/45591 , C23C16/4584 , H01L21/67017 , H01L21/67303 , H01L21/68792
摘要： In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.
摘要翻译：在基板处理装置中，处理容器构造成容纳并处理保持在水平位置的基板。气体导入口安装在处理容器的第一侧的周边，并被构造成从衬底的横向方向将气体引入处理容器。排气口安装在与第一侧相对的处理容器的第二侧，并且构造成从衬底的横向方向排出处理容器内的气体。倾斜部分安装在处理容器内的气体导入口和排气口之间，构成为引导导入处理容器的气体的流路。

7. 发明申请

US20080153314A1 Substrate processing apparatus, method of manufacturing semiconductor device, and heating apparatus 有权
标题翻译：基板处理装置，半导体装置的制造方法以及加热装置
公开(公告)号：US20080153314A1
公开(公告)日：2008-06-26
申请号：US11987493
申请日：2007-11-30
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Yukinori Aburatani , Tomoyuki Yamada , Sieyo Nakashima , Masashi Sugishita
IPC分类号： H01L21/00 , B01J19/00 , F27B5/14
CPC分类号： H01L21/67109 , F27B17/0025
摘要： An object of the present invention is to improve substrate processing efficiency. A substrate processing apparatus has a reaction tube that processes a substrate inside, and a heating apparatus disposed so as to surround an external periphery of the reaction tube, so that at least a gas inlet tube is disposed on a side surface in an area in which the substrate is processed inside the reaction tube, and the heating apparatus has a heat insulator that surrounds the reaction tube, an inlet opening formed in the shape of a groove in the heat insulator from the lower end of the heating apparatus so as to avoid the gas inlet tube, and a heating element disposed between the heat insulator and the reaction tube.
摘要翻译：本发明的目的是提高基板处理效率。基板处理装置具有处理内部的基板的反应管和设置成围绕反应管的外周的加热装置，使得至少一个气体入口管设置在其中的在反应管内加工基板，加热装置具有围绕反应管的绝热体，从加热装置的下端形成为绝热体的槽状的入口开口，以避免气体入口管和设置在隔热件和反应管之间的加热元件。

8. 发明授权

US08541871B2 Multilayered lead frame for a semiconductor light-emitting device 有权
标题翻译：用于半导体发光器件的多层引线框架
公开(公告)号：US08541871B2
公开(公告)日：2013-09-24
申请号：US12716938
申请日：2010-03-03
申请人： Hidekazu Tomohiro , Masayuki Fujii , Norio Satou , Tomoyuki Yamada , Tomio Kusano
发明人： Hidekazu Tomohiro , Masayuki Fujii , Norio Satou , Tomoyuki Yamada , Tomio Kusano
IPC分类号： H01L23/495
CPC分类号： H01L33/62 , H01L23/49582 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/85439 , H01L2224/85464 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2224/45099 , H01L2924/00
摘要： A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.
摘要翻译：通过以大致整体的方式施加镀镍（102），镀钯（103）和镀金（104）的方式形成用于半导体器件的引线框架（100），以引导诸如铜薄板的框架体（101）并且进一步将银电镀（105）选择性地施加到将被半导体器件的封装封装的内部部分的一部分。引线框架（100）还可以包括封装的基部。镀银有助于内部部件的良好的光反射率和引线接合效率，而闪镀电镀有助于在封装外部的外部部件具有优异的耐腐蚀性和焊接效率。

9. 发明授权

US08112183B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08112183B2
公开(公告)日：2012-02-07
申请号：US12260211
申请日：2008-10-29
申请人： Tomoyuki Yamada
发明人： Tomoyuki Yamada
IPC分类号： G06F19/00
CPC分类号： H01L21/67109 , H01L21/67253
摘要： A substrate processing apparatus detects malfunction of mechanisms in MFC. An inert gas supply line, a first shut-off valve shutting off the inert gas supply, a process gas supply line, and a second shut-off valve shutting off the process gas supply are installed upstream of the MFC. A gas supply pipe connected to a process chamber, a third shut-off valve shutting off gas supply to the gas supply pipe, an exhaust vent line which is exhaustible, and a fourth shut-off valve shutting off gas supply to the exhaust vent line are installed downstream of the MFC. A main control unit determines that the MFC is abnormal if a transition time exceeds a previously set time when the MFC transitions from a closed state to an opened state while the shut-off valves are in a closed state.
摘要翻译：基板处理装置检测MFC中的机构的故障。惰性气体供给管线，关闭惰性气体源的第一截止阀，处理气体供应管线和关闭工艺气体供应的第二截止阀安装在MFC的上游。连接到处理室的气体供给管，关闭气体供给管的气体供给的第三截止阀，可排出的排气管，以及关闭排气管线的气体供给的第四截止阀安装在MFC的下游。如果在关闭阀处于关闭状态时，当MFC从关闭状态转换到打开状态时，如果转换时间超过预先设定的时间，则主控制单元确定MFC异常。

10. 发明申请

US20110300981A1 FRICTION DRIVE BELT 审中-公开
标题翻译：摩擦驱动皮带
公开(公告)号：US20110300981A1
公开(公告)日：2011-12-08
申请号：US13202414
申请日：2010-02-24
申请人： Shinji Takahashi , Kenichiro Furuta , Hiroyuki Shiriike , Tomoyuki Yamada , Hiroyuki Tachibana
发明人： Shinji Takahashi , Kenichiro Furuta , Hiroyuki Shiriike , Tomoyuki Yamada , Hiroyuki Tachibana
IPC分类号： F16G1/06
CPC分类号： C08K3/346 , C08K3/06 , C08K3/26 , C08K5/04 , C08K7/26 , C08L23/16 , C08L77/00 , C08L91/00 , C08L2205/16 , C08L2312/00 , F16G5/20 , C08L21/00
摘要： A friction drive belt (B) includes a belt body (10) that is wrapped around pulleys in contact therewith to transmit power. At least a pulley contact portion (15) of the belt main body (10) is made of a rubber composition containing 30-80 parts by mass of at least one layered silicate selected from a smectite group and a vermiculite group, per 100 parts by mass of raw rubber containing an ethylene-α-olefin elastomer.
摘要翻译：摩擦传动带（B）包括带状体（10），所述带体（10）缠绕在与其接触的皮带轮上以传递动力。带主体（10）的至少一个滑轮接触部分（15）由橡胶组合物制成，该橡胶组合物含有30-80质量份选自蒙脱石组和蛭石组中的至少一种层状硅酸盐，每100份含有乙烯-α-烯烃弹性体的生橡胶的质量。

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