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1. 发明授权

US07463297B2 Liquid crystal display device provided with an image capturing function 失效
标题翻译：具有摄像功能的液晶显示装置
公开(公告)号：US07463297B2
公开(公告)日：2008-12-09
申请号：US10998836
申请日：2004-11-30
申请人： Masahiro Yoshida , Takashi Nakamura , Hirotaka Hayashi , Norio Tada , Jun Hirota , Masaki Kinoshita
发明人： Masahiro Yoshida , Takashi Nakamura , Hirotaka Hayashi , Norio Tada , Jun Hirota , Masaki Kinoshita
IPC分类号： H04N5/335
CPC分类号： H01L27/146 , G09G3/3648
摘要： To enable acquisition of image data in multiple tone levels in a short capturing time, a liquid crystal display device 1 includes a photodiode having sensitivity R, a capacitor having capacitance C and configured to store a charge in response to an electric signal converted by the photodiode in a state where an initial voltage V is applied thereto, a SRAM configured to retain binary data which indicate as to whether or not an amount of charge stored in the capacitor is equal to or above a threshold voltage Vth, an image capturing control unit 5 configured to generate pixel data in multiple tone levels based on the binary data outputted from the SRAM of a plurality of adjacent pixels. Here, at least any one value of R, V, C, and Vth in each of the pixels is set to a different value from relevant values of other adjacent pixels.
摘要翻译：为了在短的拍摄时间内以多个色调级别获取图像数据，液晶显示装置1包括具有灵敏度R的光电二极管，具有电容C的电容器，并且被配置为响应于由光电二极管转换的电信号而存储电荷在施加初始电压V的状态下，配置为保持表示存储在电容器中的电荷量是否等于或高于阈值电压Vth的二进制数据的SRAM，图像捕获控制单元5 被配置为基于从多个相邻像素的SRAM输出的二进制数据生成多个音调电平的像素数据。这里，每个像素中的R，V，C和Vth中的至少任何一个值被设置为与其它相邻像素的相关值不同的值。

2. 发明申请

US20050128331A1 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US20050128331A1
公开(公告)日：2005-06-16
申请号：US10998836
申请日：2004-11-30
申请人： Masahiro Yoshida , Takashi Nakamura , Hirotaka Hayashi , Norio Tada , Jun Hirota , Masaki Kinoshita
发明人： Masahiro Yoshida , Takashi Nakamura , Hirotaka Hayashi , Norio Tada , Jun Hirota , Masaki Kinoshita
IPC分类号： G02F1/1368 , G02F1/133 , G09G3/20 , G09G3/36 , H01L27/146 , H04N5/335
CPC分类号： H01L27/146 , G09G3/3648
摘要： To enable acquisition of image data in multiple tone levels in a short capturing time, a liquid crystal display device 1 includes a photodiode having sensitivity R, a capacitor having capacitance C and configured to store a charge in response to an electric signal converted by the photodiode in a state where an initial voltage V is applied thereto, a SRAM configured to retain binary data which indicate as to whether or not an amount of charge stored in the capacitor is equal to or above a threshold voltage Vth, an image capturing control unit 5 configured to generate pixel data in multiple tone levels based on the binary data outputted from the SRAM of a plurality of adjacent pixels. Here, at least any one value of R, V, C, and Vth in each of the pixels is set to a different value from relevant values of other adjacent pixels.
摘要翻译：为了在短的拍摄时间内以多个色调级别获取图像数据，液晶显示装置1包括具有灵敏度R的光电二极管，具有电容C的电容器，并且被配置为响应于由光电二极管转换的电信号而存储电荷在施加初始电压V的状态下，配置为保持表示存储在电容器中的电荷量是否等于或高于阈值电压Vth的二进制数据的SRAM，图像捕获控制单元5 被配置为基于从多个相邻像素的SRAM输出的二进制数据生成多个音调电平的像素数据。这里，每个像素中的R，V，C和Vth中的至少任何一个值被设置为与其它相邻像素的相关值不同的值。

3. 发明申请

US20050256966A1 Communication terminal device, information providing device, and cellular telephone system 有权
标题翻译：通信终端设备，信息提供设备和蜂窝电话系统
公开(公告)号：US20050256966A1
公开(公告)日：2005-11-17
申请号：US11118380
申请日：2005-05-02
申请人： Jun Hirota , Masaki Kinoshita
发明人： Jun Hirota , Masaki Kinoshita
IPC分类号： H04M3/42 , G06F3/14 , H04L29/06 , H04M1/02 , H04M1/725 , H04M3/493 , H04M11/08 , H04Q7/38 , G06F15/16
CPC分类号： H04L65/604 , H04L29/06027 , H04L65/4092 , H04L65/608 , H04M1/0214 , H04M2250/16 , H04N21/2543 , H04N21/41407 , H04N21/4312 , H04N21/4314 , H04N21/4882 , H04N21/6581 , H04N21/8133
摘要： A communication terminal device includes a first display part configured to display streaming sub information, a second display part configured to display streaming main information related to the streaming sub information, a sub information reception unit configured to receive the streaming sub information sequentially transmitted from an information providing device and to display the received streaming sub information on the first display part, a request transmission unit configured to transmit to the information providing device an information request signal for requesting the streaming main information related to the streaming sub information displayed on the first display part, and a main information reception unit configured to receive the streaming main information and to display the streaming main information on the second display part.
摘要翻译：一种通信终端装置，具备：第一显示部，被配置为显示流媒体子信息;第二显示部，被配置为显示与所述流媒体子信息相关的流媒体主信息;子信息接收部，被配置为接收从信息顺序发送的流式传输子信息提供设备并在第一显示部分上显示所接收的流式传输子信息;请求传输单元，被配置为向信息提供设备发送信息请求信号，用于请求与第一显示部分上显示的流式传输子信息相关的传输主要信息以及主信息接收单元，被配置为接收流式主信息并在第二显示部分上显示流主要信息。

4. 发明授权

US07392058B2 Communication terminal device, information providing device, and cellular telephone system 有权
标题翻译：通信终端设备，信息提供设备和蜂窝电话系统
公开(公告)号：US07392058B2
公开(公告)日：2008-06-24
申请号：US11118380
申请日：2005-05-02
申请人： Jun Hirota , Masaki Kinoshita
发明人： Jun Hirota , Masaki Kinoshita
IPC分类号： H04M1/00
CPC分类号： H04L65/604 , H04L29/06027 , H04L65/4092 , H04L65/608 , H04M1/0214 , H04M2250/16 , H04N21/2543 , H04N21/41407 , H04N21/4312 , H04N21/4314 , H04N21/4882 , H04N21/6581 , H04N21/8133
摘要： A communication terminal device includes a first display part configured to display streaming sub information, a second display part configured to display streaming main information related to the streaming sub information, a sub information reception unit configured to receive the streaming sub information sequentially transmitted from an information providing device and to display the received streaming sub information on the first display part, a request transmission unit configured to transmit to the information providing device an information request signal for requesting the streaming main information related to the streaming sub information displayed on the first display part, and a main information reception unit configured to receive the streaming main information and to display the streaming main information on the second display part.
摘要翻译：一种通信终端装置，具备：第一显示部，被配置为显示流媒体子信息;第二显示部，被配置为显示与所述流媒体子信息相关的流媒体主信息;子信息接收部，被配置为接收从信息顺序发送的流式传输子信息提供设备并在第一显示部分上显示所接收的流式传输子信息;请求传输单元，被配置为向信息提供设备发送信息请求信号，用于请求与第一显示部分上显示的流式传输子信息相关的传输主要信息以及主信息接收单元，被配置为接收流式主信息并在第二显示部分上显示流主要信息。

5. 发明授权

US08084830B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08084830B2
公开(公告)日：2011-12-27
申请号：US12556005
申请日：2009-09-09
申请人： Hiroshi Kanno , Kenichi Murooka , Jun Hirota , Hideyuki Tabata
发明人： Hiroshi Kanno , Kenichi Murooka , Jun Hirota , Hideyuki Tabata
IPC分类号： H01L27/11
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/1027
摘要： The memory cell is located at respective intersections between the first wirings and the second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The rectifier element includes a p type first semiconductor region, and a n type second semiconductor region. The first semiconductor region is formed of, at least in part, silicon-germanium mixture (Si1-xGex (0
摘要翻译：存储单元位于第一布线和第二布线之间的相应交点处。每个存储单元具有串联连接的整流元件和可变电阻元件。整流元件包括p型第一半导体区域和n型第二半导体区域。第一半导体区域至少部分地由硅 - 锗混合物（Si1-xGex（0

6. 发明授权

US07521352B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07521352B2
公开(公告)日：2009-04-21
申请号：US11790723
申请日：2007-04-27
申请人： Hideo Shinomiya , Jun Hirota , Mie Matsuo , Hisashi Kaneko
发明人： Hideo Shinomiya , Jun Hirota , Mie Matsuo , Hisashi Kaneko
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , G03F9/708 , G03F9/7084 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming a copper anti-diffusion film on a copper trench wiring layer, and forming an opening portion in the copper anti-diffusion film by laser ablation, the opening portion being formed in a region corresponding to an alignment region used for lithography process for forming an aluminum wiring on the copper trench wiring layer.
摘要翻译：一种半导体器件的制造方法，其特征在于，在铜沟布线层上形成铜抗扩散膜，通过激光烧蚀在所述铜抗扩散膜中形成开口部，所述开口部形成在与所述铜用于在铜沟布线层上形成铝布线的光刻工艺的区域。

7. 发明授权

US4097661A Process for producing conjugated diolefinic polymers 失效
标题翻译：制备共轭二烯聚合物的方法
公开(公告)号：US4097661A
公开(公告)日：1978-06-27
申请号：US788351
申请日：1977-04-18
申请人： Koei Komatsu , Kenji Itoyama , Jun Hirota , Akio Nishijima
发明人： Koei Komatsu , Kenji Itoyama , Jun Hirota , Akio Nishijima
IPC分类号： C08F4/00 , C08F2/38 , C08F4/42 , C08F4/46 , C08F36/00 , C08F36/04 , C08F4/56
CPC分类号： C08F36/04
摘要： A process for producing a conjugated diolefinic polymer by polymerizing at least one conjugated diolefin or copolymerizing at least one conjugated diolefin with at least one vinyl aromatic hydrocarbon in a hydrocarbon solvent in the presence of an alfin catalyst and at least one molecular weight regulator selected from the group consisting of (A) unsaturated halohydrocarbons represented by the general formula, RCX .dbd. CYZ, wherein R represents hydrogen, an alkyl group having 1 to 7 carbon atoms, a vinyl group, a phenyl group, a substituted phenyl group, or a halogen atom and X, Y and Z represent independently a hydrogen or halogen atom, at least one of said R, X, Y and Z being a halogen atom, (B) halogenated aromatic hydrocarbons, (C) ethers, polyethers, and acetals and (D) tertiary amines and, if necessary, a dihydro aromatic hydrocarbon, characterized in that said polymerization or copolymerization is effected in the presence of 0.03 to 0.9 mole of water and/or an alcohol per mole of organosodium contained in said alfin catalyst. According to this invention, there is obtained a polymer or copolymer excellent in green strength and processability of the unvulcanized compound and in physical properties of the vulcanizate.
摘要翻译：一种制备共轭二烯烃聚合物的方法，其通过在烯烃催化剂和至少一种分子量调节剂的存在下，在烃溶剂中聚合至少一种共轭二烯烃或共聚至少一种共轭二烯烃与至少一种乙烯基芳烃，由以下通式表示的（A）不饱和卤代烃：RCX = CYZ，其中R表示氢，具有1至7个碳原子的烷基，乙烯基，苯基，取代的苯基或卤素原子并且X，Y和Z分别独立地表示氢原子或卤素原子，所述R，X，Y和Z中的至少一个为卤素原子，（B）卤代芳香烃，（C）醚，聚醚和缩醛和（D ）叔胺和如果需要的二氢芳族烃，其特征在于所述聚合或共聚在每摩尔o的0.03至0.9摩尔的水和/或醇的存在下进行所述烯烃催化剂中含有的果糖钠。根据本发明，获得了未硫化化合物的生坯强度和加工性能以及硫化橡胶的物理性能优异的聚合物或共聚物。

8. 发明授权

US08436331B2 Memory device and method for manufacturing same 失效
标题翻译：存储器件及其制造方法
公开(公告)号：US08436331B2
公开(公告)日：2013-05-07
申请号：US12844374
申请日：2010-07-27
申请人： Yoko Iwakaji , Jun Hirota , Kyoichi Suguro , Moto Yabuki
发明人： Yoko Iwakaji , Jun Hirota , Kyoichi Suguro , Moto Yabuki
IPC分类号： H01L21/02
CPC分类号： H01L27/1021 , G11C13/0007 , G11C2213/71 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/16 , H01L45/1675
摘要： According to one embodiment, a method for manufacturing a memory device is disclosed. The method includes forming a silicon diode. At least an upper portion of the silicon diode is made of a semiconductor material containing silicon and doped with impurity. The method includes forming a metal layer made of a metal on the silicon diode. The method includes forming a metal nitride layer made of a nitride of the metal on the metal layer. The method includes forming a resistance change film. In addition, the method includes reacting the metal layer with the silicon diode and the metal nitride layer by heat treatment to form an electrode film containing the metal, silicon, and nitrogen.
摘要翻译：根据一个实施例，公开了一种用于制造存储器件的方法。该方法包括形成硅二极管。至少硅二极管的上部由含有硅并掺杂杂质的半导体材料制成。该方法包括在硅二极管上形成由金属制成的金属层。该方法包括在金属层上形成由金属的氮化物制成的金属氮化物层。该方法包括形成电阻变化膜。此外，该方法包括通过热处理使金属层与硅二极管和金属氮化物层反应，以形成含有金属，硅和氮的电极膜。

9. 发明申请

US20100213550A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100213550A1
公开(公告)日：2010-08-26
申请号：US12556005
申请日：2009-09-09
申请人： Hiroshi Kanno , Kenichi Murooka , Jun Hirota , Hideyuki Tabata
发明人： Hiroshi Kanno , Kenichi Murooka , Jun Hirota , Hideyuki Tabata
IPC分类号： H01L27/10
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/1027
摘要： The memory cell is located at respective intersections between the first wirings and the second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The rectifier element includes a p type first semiconductor region, and a n type second semiconductor region. The first semiconductor region is formed of, at least in part, silicon-germanium mixture (Sii-xGex (0
摘要翻译：存储单元位于第一布线和第二布线之间的相应交点处。每个存储单元具有串联连接的整流元件和可变电阻元件。整流元件包括p型第一半导体区域和n型第二半导体区域。第一半导体区域至少部分地由硅 - 锗混合物（Sii-xGex（0

10. 发明授权

US08309958B2 Semiconductor memory device and method of manufacturing same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08309958B2
公开(公告)日：2012-11-13
申请号：US12872284
申请日：2010-08-31
申请人： Jun Hirota , Yoko Iwakaji , Moto Yabuki
发明人： Jun Hirota , Yoko Iwakaji , Moto Yabuki
IPC分类号： H01L29/06 , H01L29/12 , H01L45/00
CPC分类号： H01L27/1021 , H01L27/101
摘要： According to one embodiment, a semiconductor memory device includes a word line interconnection layer, a bit line interconnection layer and a pillar. The word line interconnection layer includes a plurality of word lines which extend in a first direction. The bit line interconnection layer includes a plurality of bit lines which extend in a second direction crossing over the first direction. The pillar is arranged between each of the word lines and each of the bit lines. The pillar includes a silicon diode and a variable resistance film, and the silicon diode includes a p-type portion and an n-type portion. The word line interconnection layer and the bit line interconnection layer are alternately stacked, and a compressive force is applied to the silicon diode in a direction in which the p-type portion and the n-type portion become closer to each other.
摘要翻译：根据一个实施例，半导体存储器件包括字线互连层，位线互连层和柱。字线互连层包括沿第一方向延伸的多个字线。位线互连层包括沿与第一方向交叉的第二方向延伸的多个位线。支柱布置在每个字线和每个位线之间。支柱包括硅二极管和可变电阻膜，并且硅二极管包括p型部分和n型部分。字线互连层和位线互连层交替堆叠，并且在p型部分和n型部分变得更接近的方向上对硅二极管施加压缩力。

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