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1. 发明授权

US07521352B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07521352B2
公开(公告)日：2009-04-21
申请号：US11790723
申请日：2007-04-27
申请人： Hideo Shinomiya , Jun Hirota , Mie Matsuo , Hisashi Kaneko
发明人： Hideo Shinomiya , Jun Hirota , Mie Matsuo , Hisashi Kaneko
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , G03F9/708 , G03F9/7084 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming a copper anti-diffusion film on a copper trench wiring layer, and forming an opening portion in the copper anti-diffusion film by laser ablation, the opening portion being formed in a region corresponding to an alignment region used for lithography process for forming an aluminum wiring on the copper trench wiring layer.
摘要翻译：一种半导体器件的制造方法，其特征在于，在铜沟布线层上形成铜抗扩散膜，通过激光烧蚀在所述铜抗扩散膜中形成开口部，所述开口部形成在与所述铜用于在铜沟布线层上形成铝布线的光刻工艺的区域。

2. 发明申请

US20070254474A1 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20070254474A1
公开(公告)日：2007-11-01
申请号：US11790723
申请日：2007-04-27
申请人： Hideo Shinomiya , Jun Hirota , Mie Matsuo , Hisashi Kaneko
发明人： Hideo Shinomiya , Jun Hirota , Mie Matsuo , Hisashi Kaneko
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , G03F9/708 , G03F9/7084 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming a copper anti-diffusion film on a copper trench wiring layer, and forming an opening portion in the copper anti-diffusion film by laser aberration, the opening portion being formed in a region corresponding to an alignment region used for lithography process for forming an aluminum wiring on the copper trench wiring layer.
摘要翻译：一种半导体器件的制造方法，其特征在于，在铜沟布线层上形成铜抗扩散膜，通过激光像差在所述铜防扩散膜中形成开口部，所述开口部形成在对应于用于在铜沟布线层上形成铝布线的光刻工艺的区域。

3. 发明申请

US20070210406A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070210406A1
公开(公告)日：2007-09-13
申请号：US11715963
申请日：2007-03-09
申请人： Jun Hirota , Hideo Shinomiya
发明人： Jun Hirota , Hideo Shinomiya
IPC分类号： H01L29/00 , H01L21/44
CPC分类号： H01L21/76802 , H01L21/76814 , H01L21/76829 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first interlayer insulating film, a second interlayer insulating film formed on the first interlayer insulating film, a plug having a lower portion surrounded by the first interlayer insulating film and an upper portion projecting from the first interlayer insulating film and surrounded by the second interlayer insulating film, a wire formed in the second interlayer insulating film, and having a connected portion that is connected to the plug and a non-connected portion that is not connected to the plug, and a stopper insulating film formed in a region between the first interlayer insulating film and the non-connected portion of the wire and between the second interlayer insulating film and the upper portion of the plug.
摘要翻译：半导体器件包括第一层间绝缘膜，形成在第一层间绝缘膜上的第二层间绝缘膜，具有被第一层间绝缘膜包围的下部的插塞和从第一层间绝缘膜突出的上部并被第二层间绝缘膜，形成在第二层间绝缘膜中的线，并且具有连接到插头的连接部分和未连接到插头的非连接部分，以及形成在区域中的阻挡绝缘膜在第一层间绝缘膜和线的非连接部分之间以及第二层间绝缘膜和插塞的上部之间。

4. 发明申请

US20130077461A1 STORAGE DEVICE 审中-公开
标题翻译：储存设备
公开(公告)号：US20130077461A1
公开(公告)日：2013-03-28
申请号：US13423755
申请日：2012-03-19
申请人： Akihiro Koga , Yasushi Tomizawa , Hideo Shinomiya , Moto Yabuki , Jun Hirota , Yoshihisa Iwata , Masayuki Ichige , Kikuko Sugimae , Junya Matsunami
发明人： Akihiro Koga , Yasushi Tomizawa , Hideo Shinomiya , Moto Yabuki , Jun Hirota , Yoshihisa Iwata , Masayuki Ichige , Kikuko Sugimae , Junya Matsunami
IPC分类号： G11B9/00
CPC分类号： G11B9/02 , G11B9/1418 , G11B9/1436
摘要： A storage device includes a recording medium, a probe, a substrate, and a processing unit. The recording medium stores a signal. The probe reads or writes the signal to/from the recording medium. The substrate is provided with the probe via a conductive anchor interposed therebetween and a first connection terminal connected to the probe. The processing unit is provided on the substrate and has a second connection terminal. The second connection terminal is connected to the first connection terminal.
摘要翻译：存储装置包括记录介质，探针，基板和处理单元。记录介质存储信号。探头将信号读取或写入记录介质。基板经由插入其间的导电锚固体和连接到探针的第一连接端子设置有探针。处理单元设置在基板上，并具有第二连接端子。第二连接端子连接到第一连接端子。

5. 发明授权

US5762110A Dents for reed in high-speed weaving machine, and method of manufacturing same 失效
标题翻译：用于高速编织机的筘头及其制造方法
公开(公告)号：US5762110A
公开(公告)日：1998-06-09
申请号：US666273
申请日：1996-09-10
申请人： Mitugu Enomoto , Hideo Shinomiya , Yukio Miya , Takanori Nanya , Shinji Ikeda
发明人： Mitugu Enomoto , Hideo Shinomiya , Yukio Miya , Takanori Nanya , Shinji Ikeda
IPC分类号： C23C16/26 , C23C16/458 , D03D49/62 , C23C16/50
CPC分类号： D03D49/62 , C23C16/26 , C23C16/458 , D03D47/278 , Y10S428/938 , Y10T428/24975
摘要： A dent (1A) for a reed for use on a high-speed weaving machine, comprises a thin flat strip (3) made of stainless steel, and a hard carbon film (2) formed on only the surface of a working ridge edge portion (3b) of the thin flat strip (3) to come into sliding contact with a yarn. The method of manufacture comprising steps of superposing a plurality of thin flat strips (3) made of a stainless steel in the same shape in a stack with the flat side surfaces (3a) of the adjacent thin flat strips (3) in close contact with each other, placing the stack of thin flat strips (3) in a film forming atmosphere with the ridge edge portions opposite the working edge portions (3b) to come in sliding contact with a yarn trued up by a dent aligning jig, and coating the working ridge edge portions (3b) of the thin flat strips (3) exposed to the film forming atmosphere with a hard carbon film (2).
摘要翻译： PCT No.PCT / JP94 / 02193 Sec。 371日期：1996年9月10日 102（e）日期1996年9月10日PCT 1994年12月22日PCT PCT。第WO95 / 17541号公报日期：1995年6月29日在高速织机上使用的用于簧片的凹槽（1A）包括由不锈钢制成的薄扁平条（3）和仅在表面上形成的硬碳膜（2）所述薄平条带（3）的工作脊边缘部分（3b）与纱线滑动接触。制造方法包括以下步骤：将叠层中与相邻薄片（3）的平坦侧表面（3a）形成相同形状的由不锈钢制成的多个薄扁平条（3）叠置成与彼此相对地，将薄的扁平条（3）堆叠在具有与工作边缘部分（3b）相对的边缘部分的成膜气氛中，以与由凹痕对准夹具修剪的纱线滑动接触，并且涂覆用硬碳膜（2）暴露于成膜气氛的薄平板条（3）的工作脊边缘部分（3b）。

6. 发明授权

US06492278B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06492278B2
公开(公告)日：2002-12-10
申请号：US09742116
申请日：2000-12-22
申请人： Hideo Shinomiya , Shoji Seta
发明人： Hideo Shinomiya , Shoji Seta
IPC分类号： H01L21302
CPC分类号： H01L21/31144
摘要： A second resist film is formed on a first resist film and then patterned. Thereafter, an SOG film is formed on the entire surface of the resultant structure to cover the second resist film. Subsequently, the SOG film and the second resist film and the first resist film are removed to pattern the SOG film and the first resist film. After that, using the patterned the first resist film as a mask, a trench is formed.
摘要翻译：在第一抗蚀剂膜上形成第二抗蚀剂膜，然后将其图案化。此后，在所得结构的整个表面上形成SOG膜以覆盖第二抗蚀剂膜。随后，除去SOG膜和第二抗蚀剂膜和第一抗蚀剂膜以图案化SOG膜和第一抗蚀剂膜。之后，使用图案化的第一抗蚀剂膜作为掩模，形成沟槽。

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