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1. 发明申请

US20070142962A1 Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the same 有权
标题翻译：半导体基板转印装置和配备有该基板的半导体基板处理装置
公开(公告)号：US20070142962A1
公开(公告)日：2007-06-21
申请号：US11445035
申请日：2006-06-01
申请人： Masahiro Takizawa , Masaei Suwada , Takashi Wada
发明人： Masahiro Takizawa , Masaei Suwada , Takashi Wada
IPC分类号： G06F7/00 , B65H1/00
CPC分类号： H01L21/67265 , H01L21/67276 , H01L21/67781
摘要： A semiconductor substrate transfer apparatus for transferring semiconductor substrates from a first container to a second container, includes: multiple end effectors; at least one robot arm with which the multiple end effectors are independently rotatably joined; and a controller storing software including instructions to judge which end effector or end effectors in the multiple end effectors are to be selected based on a distribution status of substrates stored in the first and second containers and to rotate the selected end effector(s) for unloading a substrate or substrates from the first container and loading the substrate or substrates to the second container.
摘要翻译：一种用于将半导体衬底从第一容器转移到第二容器的半导体衬底传送装置，包括：多个端部执行器; 至少一个机器人手臂，多个端部执行器可独立地可旋转地连接; 以及控制器，其存储软件，其包括用于基于存储在所述第一和第二容器中的基板的分布状态来判断所述多个末端执行器中的哪个末端执行器或末端执行器被选择的指令，并且旋转所选择的末端执行器以用于卸载来自第一容器的衬底或衬底，并将衬底或衬底装载到第二容器。

2. 发明授权

US07618226B2 Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the same 有权
标题翻译：半导体基板转印装置和配备有该基板的半导体基板处理装置
公开(公告)号：US07618226B2
公开(公告)日：2009-11-17
申请号：US11445035
申请日：2006-06-01
申请人： Masahiro Takizawa , Masaei Suwada , Takashi Wada
发明人： Masahiro Takizawa , Masaei Suwada , Takashi Wada
IPC分类号： B65B69/00
CPC分类号： H01L21/67265 , H01L21/67276 , H01L21/67781
摘要： A semiconductor substrate transfer apparatus for transferring semiconductor substrates from a first container to a second container, includes: multiple end effectors; at least one robot arm with which the multiple end effectors are independently rotatably joined; and a controller storing software including instructions to judge which end effector or end effectors in the multiple end effectors are to be selected based on a distribution status of substrates stored in the first and second containers and to rotate the selected end effector(s) for unloading a substrate or substrates from the first container and loading the substrate or substrates to the second container.
摘要翻译：一种用于将半导体衬底从第一容器转移到第二容器的半导体衬底传送装置，包括：多个端部执行器; 至少一个机器人手臂，多个端部执行器可独立地可旋转地连接; 以及控制器，其存储软件，其包括用于基于存储在所述第一和第二容器中的基板的分布状态来判断所述多个末端执行器中的哪个末端执行器或末端执行器被选择的指令，并且旋转所选择的末端执行器以用于卸载来自第一容器的衬底或衬底，并将衬底或衬底装载到第二容器。

3. 发明授权

US08041450B2 Position sensor system for substrate transfer robot 有权
标题翻译：基板传送机器人位置传感器系统
公开(公告)号：US08041450B2
公开(公告)日：2011-10-18
申请号：US11867525
申请日：2007-10-04
申请人： Masahiro Takizawa , Masaei Suwada
发明人： Masahiro Takizawa , Masaei Suwada
IPC分类号： G06F19/00 , G05B15/02
CPC分类号： H01L21/67265 , H01L21/68707
摘要： A substrate processing apparatus comprises a substrate handling chamber, a pair of position sensors, and a substrate transfer robot. Each of the sensors comprises an emitter configured to emit a beam of light, and a receiver configured to receive the light beam. The substrate transfer robot comprises an end effector and a robot actuator. The end effector is configured to hold a substrate such that the substrate has a same expected position with respect to the end effector every time the substrate is held. The robot actuator is configured to move the end effector within the handling chamber to transfer substrates among a plurality of substrate stations. An edge of a substrate held in the expected position by the end effector can partially block a light beam of one of the position sensors, while another end of the end effector partially blocks a light beam of the other position sensor.
摘要翻译：基板处理装置包括基板处理室，一对位置传感器和基板传送机器人。每个传感器包括被配置为发射光束的发射器和被配置为接收光束的接收器。基板传送机器人包括端部执行器和机器人致动器。端部执行器被配置为保持基板，使得每次保持基板时，基板相对于末端执行器具有相同的预期位置。机器人致动器构造成使处理室内的末端执行器移动以在多个基板站之间传送基板。通过端部执行器保持在预期位置的基板的边缘可以部分地阻挡位置传感器之一的光束，而末端执行器的另一端部分地阻挡另一个位置传感器的光束。

4. 发明申请

US20090252580A1 WAFER PROCESSING APPARATUS WITH WAFER ALIGNMENT DEVICE 有权
标题翻译：具有水平对准装置的波浪加工设备
公开(公告)号：US20090252580A1
公开(公告)日：2009-10-08
申请号：US12062419
申请日：2008-04-03
申请人： Masahiro Takizawa , Masaei Suwada , Masayuki Akagawa
发明人： Masahiro Takizawa , Masaei Suwada , Masayuki Akagawa
IPC分类号： H01L21/67
CPC分类号： H01L21/68707 , H01L21/681 , Y10S414/135 , Y10S414/136
摘要： A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially blocks light received by the first photosensor at a ready-to-load position and substantially entirely blocks light received by the first photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction; and a second photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer does not block light received by the second photosensor at the ready-to-load position and partially blocks light received by the second photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction.
摘要翻译：一种半导体处理装置，包括：晶片处理室; 晶圆处理室; 晶片处理装置; 第一光电传感器，其设置在晶片处理室前面的晶片处理室中，在晶片处理室的位置处，晶片部分地阻挡由第一光电传感器接收的光在准备加载位置，并且当基板完全阻挡由第一光电传感器接收的光时晶片从准备位置朝向晶片处理室在x轴方向移动; 以及第二光电传感器，其在所述晶片处理室的前方设置在所述晶片处理室的位置处，所述晶片处理室在所述晶片不会阻挡由所述第二光电传感器在所述准备加载位置接收的光的位置，并且部分地阻挡由所述第二光电传感器接收的光晶片在准备加载位置朝向晶片处理室沿x轴方向移动。

5. 发明授权

US08758514B2 Cluster type semiconductor processing apparatus 有权
标题翻译：集群式半导体处理装置
公开(公告)号：US08758514B2
公开(公告)日：2014-06-24
申请号：US11681668
申请日：2007-03-02
申请人： Masahiro Takizawa , Masaei Suwada , Takashi Hagino
发明人： Masahiro Takizawa , Masaei Suwada , Takashi Hagino
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： C23C16/54 , H01L21/67005 , H01L21/67167 , H01L21/67196
摘要： A cluster type semiconductor processing apparatus includes a wafer handling chamber having a polygonal base including multiple sides for wafer processing chambers and two adjacent sides for wafer loading/unloading chambers as viewed in a direction of an axis of the wafer handling chamber. An angle A between two adjacent sides of the multiple sides for wafer processing chambers is greater than an angle B which is calculated by dividing 360° by the number of the total sides consisting of the multiple sides for wafer processing chambers and the two adjacent sides for wafer loading/unloading chambers.
摘要翻译：集束型半导体处理装置包括晶片处理室，该晶片处理室具有多个晶圆处理室，该多边形基板包括用于晶片处理室的多个边和用于在晶片处理室的轴线方向上观察的晶片装载/卸载室的两个相邻边。用于晶片处理室的多个边的两个相邻侧之间的角度A大于通过将360°除以由晶片处理室的多个边组成的总边数和两个相邻的两边的角度B来计算的角度B，晶圆装载/卸载室。

6. 发明授权

US07963736B2 Wafer processing apparatus with wafer alignment device 有权
标题翻译：具有晶圆对准装置的晶片处理装置
公开(公告)号：US07963736B2
公开(公告)日：2011-06-21
申请号：US12062419
申请日：2008-04-03
申请人： Masahiro Takizawa , Masaei Suwada , Masayuki Akagawa
发明人： Masahiro Takizawa , Masaei Suwada , Masayuki Akagawa
IPC分类号： H01L21/677
CPC分类号： H01L21/68707 , H01L21/681 , Y10S414/135 , Y10S414/136
摘要： A semiconductor-processing apparatus includes: a wafer handling chamber; a wafer processing chamber; a wafer handling device; a first photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer partially blocks light received by the first photosensor at a ready-to-load position and substantially entirely blocks light received by the first photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction; and a second photosensor disposed in the wafer handling chamber in front of the wafer processing chamber at a position where the wafer does not block light received by the second photosensor at the ready-to-load position and partially blocks light received by the second photosensor when the wafer moves from the ready-to-load position toward the wafer processing chamber in the x-axis direction.
摘要翻译：一种半导体处理装置，包括：晶片处理室; 晶圆处理室; 晶片处理装置; 第一光电传感器，其设置在晶片处理室前面的晶片处理室中，在晶片处理室的位置处，晶片部分地阻挡由第一光电传感器接收的光在准备加载位置，并且当基板完全阻挡由第一光电传感器接收的光时晶片从准备位置朝向晶片处理室在x轴方向移动; 以及第二光电传感器，其在所述晶片处理室的前方设置在所述晶片处理室的位置处，所述晶片处理室在所述晶片不会阻挡由所述第二光电传感器在所述准备加载位置接收的光的位置，并且部分地阻挡由所述第二光电传感器接收的光晶片在准备加载位置朝向晶片处理室沿x轴方向移动。

7. 发明申请

US20090061074A1 TECHNOLOGY OF DETECTING ABNORMAL OPERATION OF PLASMA PROCESS 审中-公开
标题翻译：检测等离子体工艺异常操作的技术
公开(公告)号：US20090061074A1
公开(公告)日：2009-03-05
申请号：US12266326
申请日：2008-11-06
申请人： Masahiro Takizawa , Takashi Wada
发明人： Masahiro Takizawa , Takashi Wada
IPC分类号： C23C16/52
CPC分类号： H01J37/32935
摘要： A method of detecting abnormal operation of a plasma process, includes: (i) detecting a potential Vpp1 between an upper electrode and a lower electrode disposed parallel to each other in a reaction camber at a time T1 after the plasma process begins in the reaction chamber; (ii) detecting a Vpp2 between the upper electrode and the lower electrode at a time T2 after T1; (iii) comparing Vpp1 and Vpp2 to obtain an operation value; and (iv) determining abnormal operation if the operation value is within a predetermined range.
摘要翻译：一种检测等离子体工艺的异常操作的方法包括：（i）在反应室中等离子体处理开始之后的时间T1，检测在反应曲面中彼此平行设置的上电极和下电极之间的电位Vpp1 ; （ii）在T1之后的时间T2检测上电极和下电极之间的Vpp2; （iii）比较Vpp1和Vpp2以获得操作值; 以及（iv）如果操作值在预定范围内，则确定异常操作。

8. 发明授权

US07571732B2 Ignition control of remote plasma unit 有权
标题翻译：远程等离子体单元的点火控制
公开(公告)号：US07571732B2
公开(公告)日：2009-08-11
申请号：US11390832
申请日：2006-03-28
申请人： Masahiro Takizawa , Takashi Wada , Satoru Noguchi
发明人： Masahiro Takizawa , Takashi Wada , Satoru Noguchi
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862
摘要： A method of maintaining a remote plasma unit for cleaning a semiconductor-processing apparatus includes: (i) detecting if the semiconductor-processing apparatus is in an idle state; (ii) if the idle state is detected, igniting the remote plasma unit for cleaning the semiconductor-processing apparatus after a lapse of a given time period; (iii) detecting if the remote plasma unit is ignited in step (ii); and (iv) if the remote plasma unit is not ignited in step (ii), retrying ignition of the remote plasma unit.
摘要翻译：保持用于清洁半导体处理装置的远程等离子体单元的方法包括：（i）检测半导体处理装置是否处于空闲状态; （ii）如果检测到空闲状态，则在经过给定时间段之后点燃远程等离子体单元以清洁半导体处理装置; （iii）在步骤（ii）中检测远程等离子体单元是否点燃; 和（iv）如果远程等离子体单元在步骤（ii）中未点燃，则重试远程等离子体单元的点火。

9. 发明授权

US07340320B2 Method of recipe control operation 有权
标题翻译：配方控制操作方法
公开(公告)号：US07340320B2
公开(公告)日：2008-03-04
申请号：US11105052
申请日：2005-04-13
申请人： Masahiro Takizawa , Takashi Wada , Satoru Noguchi
发明人： Masahiro Takizawa , Takashi Wada , Satoru Noguchi
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： An operation method of a recipe control process in which multiple processing targets are processed continuously in a processing apparatus using recipes that specify a set of control parameters specifying the processing conditions of processing targets. The method comprises the steps of: (I) specifying correction coefficients to correct at least one of the parameters' values for each processing target, separately from the recipes, and (II) performing the recipe control process for multiple processing targets and applying the correction coefficients to each processing target to adjust the parameters' values.
摘要翻译：一种配方控制处理的操作方法，其中在处理装置中使用规定指定处理目标的处理条件的一组控制参数的配方连续处理多个处理目标。该方法包括以下步骤：（I）与配方分开地指定校正系数以校正每个处理目标的参数值中的至少一个值，以及（II）对多个处理目标执行配方控制处理并应用校正系数到每个处理目标来调整参数值。

10. 发明申请

US20060275931A1 Technology of detecting abnormal operation of plasma process 审中-公开
标题翻译：检测等离子体工艺异常运行的技术
公开(公告)号：US20060275931A1
公开(公告)日：2006-12-07
申请号：US11134774
申请日：2005-05-20
申请人： Masahiro Takizawa , Takashi Wada
发明人： Masahiro Takizawa , Takashi Wada
IPC分类号： H01L21/00
CPC分类号： H01J37/32935
摘要： A method of detecting abnormal operation of a plasma process, includes: (i) detecting a potential Vpp1 between an upper electrode and a lower electrode disposed parallel to each other in a reaction camber at a time T1 after the plasma process begins in the reaction chamber; (ii) detecting a Vpp2 between the upper electrode and the lower electrode at a time T2 after T1; (iii) comparing Vpp1 and Vpp2 to obtain an operation value; and (iv) determining abnormal operation if the operation value is within a predetermined range.
摘要翻译：一种检测等离子体工艺的异常操作的方法包括：（i）在等离子体处理开始之后的时间T 1，在反应曲面中检测在彼此平行设置的上电极和下电极之间的电位Vpp 1 反应室; （ii）在T 1之后的时间T 2检测上电极和下电极之间的Vpp 2; （iii）比较Vpp 1和Vpp 2以获得操作值; 以及（iv）如果操作值在预定范围内，则确定异常操作。

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