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1. 发明授权

US07561384B2 Magneto-resistive sensor having small track width and sensor height using stopper layer 失效
标题翻译：磁阻传感器具有小的轨道宽度和传感器高度，使用阻挡层
公开(公告)号：US07561384B2
公开(公告)日：2009-07-14
申请号：US11289798
申请日：2005-11-29
申请人： Masahiro Osugi , Taku Shintani , Katsuro Watanabe , Nobuo Yoshida
发明人： Masahiro Osugi , Taku Shintani , Katsuro Watanabe , Nobuo Yoshida
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , G01R33/09 , G11B5/3163 , G11B5/3169
摘要： A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the side wall in the track width direction or on the side wall in the sensor height direction of the magnetoresistive film. As a means to solve a fence and lift-off leftover of a resist in a process for forming a track and a process for forming a sensor height, a stopper layer is provided on the magnetoresistive film and the stopper layer on the refill film, and performing lift-off by CMP. By using a metallic material which has a small CMP polishing rate for at least the first stopper layer, the magnetoresistive film and the first stopper layer can be etched simultaneously and a pattern formed. As a result, decrease of the height of the resist mask by RIE can be suppressed and lift-off leftover can be prevented.
摘要翻译：通过在剥离和产生栅栏之后抑制剩余抗蚀剂掩模来提供高输出磁阻传感器，并且通过使得容易地去除在轨道宽度方向上或侧壁上沉积在侧壁上的再沉积磁阻膜的传感器高度方向。作为用于形成轨迹的工序中的抗蚀剂的栅栏和剥离残留的手段以及形成传感器高度的工序，在磁阻膜和再填充膜上的阻挡层上设置有阻挡层，通过CMP执行剥离。通过使用对于至少第一阻挡层具有小的CMP抛光速率的金属材料，可以同时蚀刻磁阻膜和第一阻挡层并形成图案。结果，可以抑制RIE的抗蚀剂掩模的高度的降低，并且可以防止剥离残留物。

2. 发明申请

US20060132983A1 Magneto-resistive sensor with stopper layer and fabrication process 失效
标题翻译：具有阻塞层和制造工艺的磁阻传感器
公开(公告)号：US20060132983A1
公开(公告)日：2006-06-22
申请号：US11289798
申请日：2005-11-29
申请人： Masahiro Osugi , Taku Shintani , Katsuro Watanabe , Nobuo Yoshida
发明人： Masahiro Osugi , Taku Shintani , Katsuro Watanabe , Nobuo Yoshida
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39 , G01R33/09 , G11B5/3163 , G11B5/3169
摘要： A high output magneto-resistive sensor is provided by suppressing leftover resist mask after lift-off and generation of a fence, and by making it easy to remove the redepositions deposited on the side wall in the track width direction or on the side wall in the sensor height direction of the magnetoresistive film. As a means to solve a fence and lift-off leftover of a resist in a process for forming a track and a process for forming a sensor height, a stopper layer is provided on the magnetoresistive film and the stopper layer on the refill film, and performing lift-off by CMP. By using a metallic material which has a small CMP polishing rate for at least the first stopper layer, the magnetoresistive film and the first stopper layer can be etched simultaneously and a pattern formed. As a result, decrease of the height of the resist mask by RIE can be suppressed and lift-off leftover can be prevented.
摘要翻译：通过在剥离和产生栅栏之后抑制剩余抗蚀剂掩模来提供高输出磁阻传感器，并且通过使得容易地去除在轨道宽度方向上或侧壁上沉积在侧壁上的再沉积磁阻膜的传感器高度方向。作为用于形成轨迹的工序中的抗蚀剂的栅栏和剥离残留的手段以及形成传感器高度的工序，在磁阻膜和再填充膜上的阻挡层上设置有阻挡层，通过CMP执行剥离。通过使用对于至少第一阻挡层具有小的CMP抛光速率的金属材料，可以同时蚀刻磁阻膜和第一阻挡层并形成图案。结果，可以抑制RIE的抗蚀剂掩模的高度的降低，并且可以防止剥离残留物。

3. 发明授权

US07859799B2 Magnetoresistive head and a manufacturing method thereof 有权
标题翻译：磁阻头及其制造方法
公开(公告)号：US07859799B2
公开(公告)日：2010-12-28
申请号：US11706152
申请日：2007-02-13
申请人： Katsuro Watanabe , Taku Shintani , Kazuhiro Ueda , Masahiro Osugi
发明人： Katsuro Watanabe , Taku Shintani , Kazuhiro Ueda , Masahiro Osugi
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , G11B5/3163 , G11B5/398
摘要： Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer and instability of reproducing property resulting from shield process, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. In an embodiment of a magnetoresistive head of the present invention, length in the sensor height direction of bottom surface of a pinning layer is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer. The angle formed by an edge in the sensor height direction of the pinning layer to the surface extended from a bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer to the surface extended from a bottom surface of the magnetoresistive film. Height of top surface of a sensor height direction refill film is equal to or higher than the top surface of the magnetoresistive film.
摘要翻译：根据本发明的实施例减小了在传感器高度方向上的磁阻膜的接合边缘处的蚀刻损伤的影响，降低了上磁屏蔽层和下磁屏蔽层之间的介电击穿电压的劣化以及再现性能的不稳定性由屏蔽过程产生，并且在CPP磁阻头中将静电容量维持在较小的值。在本发明的磁阻头的一个实施例中，钉扎层的底表面的传感器高度方向上的长度比第一铁磁层的底表面的传感器高度方向上的长度长。由钉扎层的传感器高度方向的边缘到从磁阻膜的底面延伸的表面形成的角度小于由第二铁磁层的传感器高度方向上的边缘延伸到表面延伸的角度从磁阻膜的底表面。传感器高度方向充填膜的顶表面的高度等于或高于磁阻膜的顶表面。

4. 发明申请

US20070206333A1 Magnetoresistive head and a manufacturing method thereof 有权
标题翻译：磁阻头及其制造方法
公开(公告)号：US20070206333A1
公开(公告)日：2007-09-06
申请号：US11706152
申请日：2007-02-13
申请人： Katsuro Watanabe , Taku Shintani , Kazuhiro Ueda , Masahiro Osugi
发明人： Katsuro Watanabe , Taku Shintani , Kazuhiro Ueda , Masahiro Osugi
IPC分类号： G11B5/33
CPC分类号： G11B5/3903 , G11B5/3163 , G11B5/398
摘要： Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer and instability of reproducing property resulting from shield process, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. In an embodiment of a magnetoresistive head of the present invention, length in the sensor height direction of bottom surface of a pinning layer is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer. The angle formed by an edge in the sensor height direction of the pinning layer to the surface extended from a bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer to the surface extended from a bottom surface of the magnetoresistive film. Height of top surface of a sensor height direction refill film is equal to or higher than the top surface of the magnetoresistive film.
摘要翻译：根据本发明的实施例减小了在传感器高度方向上的磁阻膜的接合边缘处的蚀刻损伤的影响，降低了上磁屏蔽层和下磁屏蔽层之间的介电击穿电压的劣化以及再现性能的不稳定性由屏蔽过程产生，并且在CPP磁阻头中将静电容量维持在较小的值。在本发明的磁阻头的一个实施例中，钉扎层的底表面的传感器高度方向上的长度比第一铁磁层的底表面的传感器高度方向上的长度长。由钉扎层的传感器高度方向的边缘到从磁阻膜的底面延伸的表面形成的角度小于由第二铁磁层的传感器高度方向上的边缘延伸到表面延伸的角度从磁阻膜的底表面。传感器高度方向充填膜的顶表面的高度等于或高于磁阻膜的顶表面。

5. 发明授权

US07446981B2 Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head 失效
标题翻译：磁头，磁头制造工艺和安装磁头的磁盘存储装置
公开(公告)号：US07446981B2
公开(公告)日：2008-11-04
申请号：US11492324
申请日：2006-07-24
申请人： Taku Shintani , Katsuro Watanabe , Nobuo Yoshida , Hisako Takei
发明人： Taku Shintani , Katsuro Watanabe , Nobuo Yoshida , Hisako Takei
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In one embodiment, the magnetic head is fabricated so that the height of the upper surface of the refill film along the sensor height direction is the same as that of the magnetoresistance layer in a portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer and the distance from the upper surface of the refill film along the sensor height direction to the upper surface of the lower shield layer gradually increases in a region from the portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer to a point at a certain distance away from the portion.
摘要翻译：本发明提供了一种高产量的高输出磁头，其能够使由上屏蔽层的磁壁移动引起的感应电流泄漏或噪声最小化。在一个实施例中，磁头被制造成使得沿着传感器高度方向的补充膜的上表面的高度与沿着传感器高度方向的补充膜接触的部分中的磁阻层的高度相同与沿着传感器高度方向的再充填膜的上表面的距离相对于下屏蔽层的上表面的距离从沿着传感器高度方向的再填充膜的部分接触的区域逐渐增加磁阻层到远离该部分一定距离处的点。

6. 发明申请

US20070030592A1 Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head 失效
标题翻译：磁头，磁头制造工艺和安装磁头的磁盘存储装置
公开(公告)号：US20070030592A1
公开(公告)日：2007-02-08
申请号：US11492324
申请日：2006-07-24
申请人： Taku Shintani , Katsuro Watanabe , Nobuo Yoshida , Hisako Takei
发明人： Taku Shintani , Katsuro Watanabe , Nobuo Yoshida , Hisako Takei
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： This invention provides a high-output magnetic head with a high yield, which is capable of minimizing sense current leak or noise caused by a shift of the magnetic wall of an upper shield layer. In one embodiment, the magnetic head is fabricated so that the height of the upper surface of the refill film along the sensor height direction is the same as that of the magnetoresistance layer in a portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer and the distance from the upper surface of the refill film along the sensor height direction to the upper surface of the lower shield layer gradually increases in a region from the portion where the refill film along the sensor height direction comes in contact with the magnetoresistance layer to a point at a certain distance away from the portion.
摘要翻译：本发明提供了一种高产量的高输出磁头，其能够使由上屏蔽层的磁壁移动引起的感应电流泄漏或噪声最小化。在一个实施例中，磁头被制造成使得沿着传感器高度方向的补充膜的上表面的高度与沿着传感器高度方向的补充膜接触的部分中的磁阻层的高度相同与沿着传感器高度方向的再充填膜的上表面的距离相对于下屏蔽层的上表面的距离从沿着传感器高度方向的再填充膜的部分接触的区域逐渐增加磁阻层到远离该部分一定距离处的点。

7. 发明申请

US20060007603A1 Magnetoresistive sensor with refill film, fabrication process, and magnetic disk storage apparatus mounting magnetoresistive sensor 审中-公开
标题翻译：具有补充膜的磁阻传感器，制造工艺和安装磁阻传感器的磁盘存储装置
公开(公告)号：US20060007603A1
公开(公告)日：2006-01-12
申请号：US11177967
申请日：2005-07-08
申请人： Kenichi Meguro , Taku Shintani , Katsuro Watanabe , Nobuo Yoshida
发明人： Kenichi Meguro , Taku Shintani , Katsuro Watanabe , Nobuo Yoshida
IPC分类号： G11B5/33 , G11B5/127 , G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： Embodiments of the invention provide a high-output magnetic reading head by making it easy to remove a re-deposited substance that deposits on the side wall surface in the track width direction or the side wall surface in the sensor height direction of a magneto-resistance film in a fabrication process of the magnetic reading head. In one embodiment, a refill film that is fabricated first of a refill film along track width direction or a refill film along sensor height direction is fabricated such that a layer in contact with the magneto-resistance film is formed of a material that is slow in etching rate but possible to minimize deterioration of characteristics due to thermal treatment and a layer(s) other than the layer in contact with the magneto-resistance film is formed of a material(s) that is fast in etching rate.
摘要翻译：本发明的实施例提供了一种高输出磁读头，其特征在于，能够容易地除去在磁阻的传感器高度方向上的轨道宽度方向或侧壁面上的侧壁面上沉积的再沉积物质胶片在磁读头的制作过程中。在一个实施例中，制造沿着轨道宽度方向首先由补充膜制造的补充膜，或沿着传感器高度方向的补片膜，使得与磁阻膜接触的层由缓慢的材料形成蚀刻速率，但是可能使由于热处理引起的特性劣化最小化，并且除了与磁阻膜接触的层以外的层由蚀刻速率快的材料形成。

8. 发明授权

US07154713B2 CPP-type magnetic head with less deformation and a magnetic recording/reproducing system using the same 失效
标题翻译：具有较小变形的CPP型磁头和使用其的磁记录/再现系统
公开(公告)号：US07154713B2
公开(公告)日：2006-12-26
申请号：US11322262
申请日：2006-01-03
申请人： Katsuro Watanabe , Kikuo Kusukawa , Taku Shintani , Kenichi Meguro
发明人： Katsuro Watanabe , Kikuo Kusukawa , Taku Shintani , Kenichi Meguro
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/102 , G11B5/3106 , G11B5/3133 , G11B5/3163 , G11B5/3169 , G11B5/3903 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： A high output, magnetoresistive head with a CPP structure is disclosed which reduces or prevents deformation near the air bearing surface of the read element portion layer at the time of air bearing surface processing. In the CPP structure magnetoresistive head, the deformation near the air bearing surface as a result of mechanical polishing during the air bearing surface processing can be reduced by forming deformation prevention layers having a higher shear modulus than the first ferromagnetic layer, and a second ferromagnetic layer between a magnetoresistive film and at least one of a lower shield layer and an upper shield layer.
摘要翻译：公开了一种具有CPP结构的高输出磁阻头，其在空气轴承表面处理时减小或防止读取元件部分层的空气支承表面附近的变形。在CPP结构磁阻头中，通过形成具有比第一铁磁层更高的剪切模量的变形防止层，可以减少在空气轴承表面加工期间由于机械抛光而在空气轴承表面附近的变形，以及第二铁磁层在磁阻膜和下屏蔽层和上屏蔽层中的至少一个之间。

9. 发明申请

US20080212238A1 Magnetoresistive head with larger longitudinal biasing 审中-公开
标题翻译：磁阻头具有较大的纵向偏置
公开(公告)号：US20080212238A1
公开(公告)日：2008-09-04
申请号：US12012341
申请日：2008-01-31
申请人： Katsuro Watanabe , Satoru Okamoto , Masahiro Osugi , Koji Okazaki
发明人： Katsuro Watanabe , Satoru Okamoto , Masahiro Osugi , Koji Okazaki
IPC分类号： G11B5/33
CPC分类号： G11B5/59633 , G11B5/59666
摘要： Embodiments of the present invention help to efficiently apply a longitudinal biasing with appropriate strength from a longitudinal biasing layer to a free layer even in a small read gap length. According to one embodiment, in the track width direction of the magnetoresistive film, the longitudinal biasing layer excluding its portion close to the magnetoresistive film is made approximately uniform in thickness. An edge toward the magnetoresistive film of the longitudinal biasing layer is positioned more outwardly in the track width direction than an edge in the track width direction of the free layer. A portion closest to the substrate of the interface between the longitudinal biasing layer and the insulator on the track-width sides is positioned lower than the interface between the magnetoresistive film and the lower magnetic shield layer.
摘要翻译：本发明的实施例有助于即使在小的读取间隙长度中也可以将具有适当强度的纵向偏置从纵向偏置层施加到自由层。根据一个实施例，在磁阻膜的磁道宽度方向上，除了靠近磁阻膜的部分之外的纵向偏置层的厚度大致均匀。朝向纵向偏置层的磁阻膜的边缘比沿自由层的轨道宽度方向的边缘更靠外侧位于轨道宽度方向上。在纵向偏置层和轨道宽度侧的绝缘体之间的界面最靠近的部分位于低于磁阻膜和下部磁屏蔽层之间的界面的位置。

10. 发明授权

US07274542B2 Magnetic sensor having a free layer containing a single magnetic domain 失效
标题翻译：磁传感器具有含有单个磁畴的自由层
公开(公告)号：US07274542B2
公开(公告)日：2007-09-25
申请号：US10358179
申请日：2003-02-05
申请人： Taku Shintani , Katsuro Watanabe , Masahiko Hatatani , Kikuo Kusukawa
发明人： Taku Shintani , Katsuro Watanabe , Masahiko Hatatani , Kikuo Kusukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/09 , G11B5/3903 , H01L43/08
摘要： A magnetic sensor includes a spacer having at least a nonmagnetic metal layer inserted between the upper shield layer and the longitudinal bias layers or between the upper shield layer and the longitudinal bias layers plus the magnetoresistive film, the shortest distance between the longitudinal bias layers and the free layer of the magnetoresistive film is set smaller than the shortest distance between the longitudinal bias layers and the upper shield layer, and this arrangement ensures that the amount of magnetic flux entering the magnetoresistive film from the longitudinal bias layers is larger than that absorbed by the upper shield layer, thus realizing a magnetic sensor whose Barkhausen noise is suppressed.
摘要翻译：磁传感器包括具有插入在上屏蔽层和纵向偏置层之间或上屏蔽层和纵向偏置层之间的至少非磁性金属层加上磁阻膜的间隔件，纵向偏置层与纵向偏置层之间的最短距离磁阻膜的自由层被设定为小于纵向偏置层和上部屏蔽层之间的最短距离，并且这种布置确保了从纵向偏置层进入磁阻膜的磁通量大于由上屏蔽层，从而实现了巴克豪森噪声抑制的磁传感器。

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