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    • 9. 发明授权
    • Gate drive circuit of voltage drive switching element
    • 电压驱动开关元件的栅极驱动电路
    • US06271709B1
    • 2001-08-07
    • US09453204
    • 1999-12-03
    • Shin KimuraMasahiro NagasuSatoru InaridaHideki MiyazakiKatsunori Suzuki
    • Shin KimuraMasahiro NagasuSatoru InaridaHideki MiyazakiKatsunori Suzuki
    • H03K1716
    • H03K17/168H03K17/163
    • A gate drive circuit of a voltage drive switching element, which is characterized by control of di/dt and dv/dt when an IGBT is switched by controlling increases in the switching time and loss of the IGBT, includes a drive means for amplifying a signal for controlling the switching operation of a voltage drive switching device including the IGBT, a means for detecting the gate voltage of the IGBT, a voltage decrease (increase) means for slowly decreasing (increasing) the output voltage when the drive means is turned on (off) in the course of time, and a voltage increase (decrease) means for slowly increasing (decreasing) the output voltage. By switching from the voltage decrease (increase) means to the voltage increase (decrease) means according to the detected value of the gate voltage of the IGBT, di/dt and dv/dt are controlled when the IGBT is turned on (off).
    • 电压驱动开关元件的栅极驱动电路,其特征在于,通过控制IGBT的切换时间和损耗的切换来切换IGBT时的di / dt和dv / dt的控制,包括用于放大信号的驱动装置 用于控制包括IGBT的电压驱动开关装置的切换操作,用于检测IGBT的栅极电压的装置,用于当驱动装置接通时缓慢降低(增加)输出电压的电压降低(增加)装置( 关闭),并且电压增加(减小)意味着缓慢增加(降低)输出电压。 通过从IGBT的栅极电压的检测值切换到电压降低(增加)装置到电压增加(减小)的手段,当IGBT导通(关闭)时,di / dt和dv / dt被控制。