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    • 1. 发明授权
    • A system for producing image signals of a subject image by an image
sensing device
    • 一种用于通过图像感测装置产生被摄体图像的图像信号的系统
    • US4899213A
    • 1990-02-06
    • US366220
    • 1989-06-12
    • Masahiro KonishiMasafumi InuiyaAkira MuramatsuMasahiro Kato
    • Masahiro KonishiMasafumi InuiyaAkira MuramatsuMasahiro Kato
    • H04N9/07H04N9/04
    • H04N9/045
    • A system is provided for producing image signals of a photographed subject image by a solid state image sensing device and for producing a brightness signal and line sequential color difference signals from the image signal. The subject image is sensed by the image sensing device which has a color filter formed thereon. First and second horizontal scanning lines of picture elements are alternately arranged and the picture elements are opposed to filter elements of the color filter. The first horizontal scanning lines separately transmit at least red light and green light and the second horizontal scanning lines transmit at least blue light and green light, to thereby obtain color image signals. The image signal thus obtained are signal processed to produce the line sequential color difference signals R-Y and B-Y. With this signal processing, the system can produce the image signals including the line sequential color difference signals by a simplified arrangement without impairing the color productivity.
    • 提供一种用于通过固态图像感测装置产生拍摄对象图像的图像信号并且用于从图像信号产生亮度信号和行顺序色差信号的系统。 被摄体图像由其上形成有滤色器的图像感测装置感测。 图像元素的第一和第二水平扫描线被交替布置,并且图像元素与滤色器的滤色器元件相对。 第一水平扫描线至少分别发送红光和绿光,第二水平扫描线至少发射蓝光和绿光,从而获得彩色图像信号。 由此获得的图像信号被信号处理以产生行顺序色差信号R-Y和B-Y。 通过该信号处理,系统可以通过简化的布置产生包括行顺序色差信号的图像信号,而不损害色彩生产率。
    • 7. 发明授权
    • Method for producing bonded wafer
    • 接合晶片的制造方法
    • US08691665B2
    • 2014-04-08
    • US13514414
    • 2010-11-18
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • Satoshi OkaHiroji AgaMasahiro KatoNobuhiko Noto
    • H01L21/30H01L21/46H01L21/00
    • H01L21/3247H01L21/302H01L21/3065H01L21/76254
    • The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
    • 本发明涉及一种接合晶片的制造方法,其特征在于,在含有氢或氯化氢的气氛中,对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理, 其中预先在其上放置接合晶片的基座的表面,在平坦化热处理时使用的基座被涂覆有硅膜。 结果,提供了一种接合晶片的制造方法,即使在将粘合晶片的薄膜的表面平坦化的热处理后,也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法 在离子注入分层方法中进行分层。