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    • 9. 发明授权
    • Semiconductor light emitting device with current confining layer
    • 具有电流限制层的半导体发光器件
    • US5404031A
    • 1995-04-04
    • US270115
    • 1994-07-01
    • Kazuaki SasakiHiroshi NakatsuOsamu YamamotoMasanori WatanabeSaburo Yamamoto
    • Kazuaki SasakiHiroshi NakatsuOsamu YamamotoMasanori WatanabeSaburo Yamamoto
    • H01L33/00H01L33/10H01L33/14H01L33/24H01L33/28H01L33/30H01L33/38
    • H01L33/38H01L33/0062H01L33/10H01L33/145H01L33/24H01L33/405
    • A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
    • 公开了一种半导体发光器件,其通过向有源层的一部分提供电流来允许有源层的一部分产生光。 半导体发光器件包括:具有上表面和下表面的半导体衬底,上表面具有阶梯部分,阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层,所述电流限制层在所述阶梯部分处是不连续的,所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构,所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。 在半导体发光器件中,从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。