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1. 发明授权

US5228047A Semiconductor laser device and a method for producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

2. 发明授权

US5404031A Semiconductor light emitting device with current confining layer 失效
标题翻译：具有电流限制层的半导体发光器件
公开(公告)号：US5404031A
公开(公告)日：1995-04-04
申请号：US270115
申请日：1994-07-01
申请人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
发明人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
IPC分类号： H01L33/00 , H01L33/10 , H01L33/14 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/38
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
摘要翻译：公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。

3. 发明授权

US5208468A Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film 失效
标题翻译：半导体激光装置具有设置在小面和保护膜之间的含硫膜
公开(公告)号：US5208468A
公开(公告)日：1993-05-04
申请号：US727375
申请日：1991-07-05
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

4. 发明授权

US5042044A Semiconductor laser device, a semiconductor wafer 失效
标题翻译：半导体激光器件，半导体晶片
公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/24 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

5. 发明授权

US4977568A Semiconductor laser device 失效
公开(公告)号：US4977568A
公开(公告)日：1990-12-11
申请号：US286682
申请日：1988-12-19
申请人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
发明人： Saburo Yamamoto , Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo
IPC分类号： H01S5/12 , H01S5/223 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2234 , H01S5/2235 , H01S5/2277
摘要： There is disclosed a semiconductor laser device with a strip-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation. This semiconductor laser device comprises an optical waveguide that a semiconductor laser device with a stripe-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer just above the striped channel of the substrate based on a decrease in the effective refractive index due to the striped channel, the outside of which absorbs a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a plurality of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer.

6. 发明授权

US4860299A Semiconductor laser device 失效
公开(公告)号：US4860299A
公开(公告)日：1989-08-22
申请号：US195069
申请日：1988-05-17
申请人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
发明人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2232 , H01S5/2275
摘要： A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).

7. 发明授权

US5260231A Method for the production of a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US5260231A
公开(公告)日：1993-11-09
申请号：US998436
申请日：1992-12-30
申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
发明人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
IPC分类号： H01S5/02 , H01S5/028 , H01L21/20
CPC分类号： H01S5/0281 , H01S5/028 , H01S5/0201 , H01S5/0282 , H01S5/0283 , Y10S148/095
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
摘要翻译：公开了从小面发射激光的半导体激光器件。半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和保护膜。

8. 发明授权

US4984244A Semiconductor laser device 失效
公开(公告)号：US4984244A
公开(公告)日：1991-01-08
申请号：US406903
申请日：1989-09-13
申请人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
发明人： Saburo Yamamoto , Taiji Morimoto , Kazuaki Sasaki , Masaki Kondo , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate, a striped mesa disposed on the substrate and having an active layer for laser oscillation, a current injection layer disposed on the striped mesa and having a width smaller than that of the striped mesa, and a burying layer disposed on both sides of the current injection layer so as to come into contact with the side walls of the current injection layer, the burying layer being capable of absorbing laser light produce in the active layer and of preventing current from flowing through the outside of the striped mesa.

9. 发明授权

US4945525A Optical information processing apparatus 失效
标题翻译：光信息处理装置
公开(公告)号：US4945525A
公开(公告)日：1990-07-31
申请号：US239753
申请日：1988-09-02
申请人： Osamu Yamamoto , Toshihiko Yoshida , Saburo Yamamoto
发明人： Osamu Yamamoto , Toshihiko Yoshida , Saburo Yamamoto
IPC分类号： G11B7/12 , G11B7/135
CPC分类号： G11B7/1384 , G11B7/124
摘要： An optical information processing apparatus including a substrate of a transparent material, first and second optical waveguides formed on opposite faces of said transparent substrate, a light introducing device for introducing reflected light from an information writing medium into the first and second optical waveguides, and a detecting device for detecting reproduction signal, tracking error signal and focusing error signal based on the reflected light introduced into the first and second optical waveguides.

10. 发明授权

US4720834A Internal-reflection-interference semiconductor laser device 失效
标题翻译：内反射干涉半导体激光器件
公开(公告)号：US4720834A
公开(公告)日：1988-01-19
申请号：US807867
申请日：1985-12-11
申请人： Osamu Yamamoto , Hiroshi Hayashi , Taiji Morimoto , Saburo Yamamoto
发明人： Osamu Yamamoto , Hiroshi Hayashi , Taiji Morimoto , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S3/082 , H01S5/042 , H01S5/10 , H01S5/22 , H01S3/19
CPC分类号： H01S3/082 , H01S5/10 , H01S5/1021 , H01S5/22
摘要： An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length l.sub.1 of the first laser operation area is shorter than the internal-cavity length l.sub.2 of the second laser operation area, the reflectivity R.sub.1 at the facet on the side of the first laser operation area is smaller than the reflectivity R.sub.2 at the facet on the side of the second laser operation area.
摘要翻译：一种内反射干涉半导体激光器件，包括从一个面到内部反射部的范围的第一激光操作区域和从另一个面到内部反射部的范围的第二激光操作区域，其中当内部反射干涉半导体激光器的内腔长度l1 第一激光操作区域比第二激光器操作区域的内腔长度l2短，第一激光操作区域侧面上的反射率R1小于第一激光器操作区域侧面上的反射率R2 第二激光操作区域。

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