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1. 发明授权

US06702892B2 Production device for high-quality silicon single crystals 有权
标题翻译：高品质硅单晶生产设备
公开(公告)号：US06702892B2
公开(公告)日：2004-03-09
申请号：US09926285
申请日：2001-11-20
申请人： Masahiko Okui , Manabu Nishimoto , Takayuki Kubo , Fumio Kawahigashi , Hiroshi Asano
发明人： Masahiko Okui , Manabu Nishimoto , Takayuki Kubo , Fumio Kawahigashi , Hiroshi Asano
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1068
摘要： An apparatus is provided which is to be used in producing single crystals for silicon wafers useful as semiconductor materials and which can stably produce large-diameter, long-length and high-quality single crystals from which wafers limited in the number of grown-in defects can be taken. This silicon single crystal production apparatus comprises a cooling member surrounding the single crystal to be pulled up and having an internal surface coaxial with the pulling axis and thermal insulating members disposed outside the outer surface and below the bottom surface of the cooling member, the cooling member having an internal surface diameter of 1.20D to 2.50D (D being the diameter of the single crystal to be pulled up) and a length of not less than 0.25D, the distance from the melt surface to the bottom surface of the cooling member being 0.30D to 0.85D and the bottom side of the thermal insulating member below the cooling member having an inside diameter smaller than the inside diameter of the bottom of the cooling member.
摘要翻译：提供了一种用于制造用作半导体材料的硅晶片的单晶的装置，其可以稳定地生产大直径，长长和高质量的单晶，其中限制了多个生长缺陷的晶片可以服用这种硅单晶制造装置包括围绕单晶的被拉起并具有与牵引轴同轴的内表面的冷却构件和设置在冷却构件的外表面的外表面的外表面的下方的隔热构件，内表面直径为1.20D至2.50D（D为待拉起的单晶的直径），长度不小于0.25D，从冷却件的熔体表面到底表面的距离为 0.30D至0.85D，并且所述隔热构件的底部在所述冷却构件下方的内径小于所述冷却构件的底部的内径。

2. 发明授权

US06767400B2 Crystal growth method 有权
标题翻译：晶体生长法
公开(公告)号：US06767400B2
公开(公告)日：2004-07-27
申请号：US10130671
申请日：2002-09-24
申请人： Takayuki Kubo , Fumio Kawahigashi , Hiroshi Asano , Shinichiro Miki , Manabu Nishimoto
发明人： Takayuki Kubo , Fumio Kawahigashi , Hiroshi Asano , Shinichiro Miki , Manabu Nishimoto
IPC分类号： C30B1520
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500° C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.
摘要翻译：在使用围绕单晶的冷却构件的CZ工艺中，允许冷却构件有效地用于增加拉制速度。防止由于过度冷却导致的单晶的裂纹发生。获得高质量的晶体。为了实现这些目的，与单晶4的外周面相对的冷却部件6的内周面的温度即使在下端也被限制在500℃以下，其温度成为最高的。为了达到上述限制，冷却部件5的厚度T为10〜50mm。冷却部件6的高度H为单晶4的直径D的0.1〜1.5倍。

3. 发明授权

US06514335B1 High-quality silicon single crystal and method of producing the same 有权
标题翻译：高品质硅单晶及其制造方法
公开(公告)号：US06514335B1
公开(公告)日：2003-02-04
申请号：US09486300
申请日：2000-02-24
申请人： Kazuyuki Egashira , Masahiko Okui , Manabu Nishimoto , Tadami Tanaka , Shunji Kuragaki , Takayuki Kubo , Shingo Kizaki , Junji Horii , Makoto Ito
发明人： Kazuyuki Egashira , Masahiko Okui , Manabu Nishimoto , Tadami Tanaka , Shunji Kuragaki , Takayuki Kubo , Shingo Kizaki , Junji Horii , Makoto Ito
IPC分类号： C30B1514
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206
摘要： A method of producing a high-quality silicon single crystal of a large diameter and a long size in a good yield by controlling the positions where ring-like oxygen-induced stacking faults (R-OSF) occur in the crystal faces and minimizing grown-in defects such a dislocation clusters and infrared scattering bodies that are introduced in the pulling step. Wafers produced from the above-high-quality silicon single crystal contain little harmful defects that would deteriorate device characteristics and can be effectively adapted to larger scale integration and size reduction of the devices. Therefore, the method can be extensively utilized in the field of producing semiconductor silicon single crystals.
摘要翻译：通过控制在晶面中发生环状氧诱导堆垛层错（R-OSF）的位置，并且使生长期最长的方法，通过控制产生高直径和长尺寸的高质量硅单晶的方法，在引入步骤中引入的诸如位错簇和红外散射体的缺陷中。由上述高质量硅单晶制造的晶片几乎没有损坏器件特性的有害缺陷，并且可以有效地适应于器件的大规模集成和尺寸减小。因此，该方法可广泛用于制造半导体硅单晶领域。

4. 发明授权

US06338757B1 Single crystal pull-up apparatus 有权
标题翻译：单晶上拉装置
公开(公告)号：US06338757B1
公开(公告)日：2002-01-15
申请号：US09582918
申请日：2000-07-07
申请人： Manabu Nishimoto , Masahiko Okui , Takayuki Kubo , Shingo Kizaki , Junji Horii
发明人： Manabu Nishimoto , Masahiko Okui , Takayuki Kubo , Shingo Kizaki , Junji Horii
IPC分类号： C30B3500
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention was achieved in order to provide an apparatus for pulling a single crystal with which a single crystal having a low density of grown-in defects called infrared scatterers, dislocation clusters or the like can be grown. In the apparatus for pulling a single crystal having a crucible to be charged with a melt, a heater arranged around the crucible, a straightening vane in the shape of a side surface of an inverted truncated cone or a cylinder surrounding a pulled single crystal and a heat shield plate for inhibiting the radiant heat from diverging upward in the chamber from the side surface of the pulled single crystal located in the vicinity of the melt surface are arranged.
摘要翻译：实现本发明是为了提供一种用于拉出单晶的装置，通过该装置可以生长出具有低密度的成长缺陷的称为红外散射体，位错簇等的单晶。在用于拉取具有熔融物的坩埚的单晶体的装置中，设置在坩埚周围的加热器，具有倒立的圆锥体的侧面形状的矫直叶片或围绕拉出的单晶的圆柱体布置了用于抑制从位于熔融表面附近的被拉取的单晶的侧表面向室内发散的辐射热的隔热板。

5. 发明授权

US06607594B2 Method for producing silicon single crystal 有权
公开(公告)号：US06607594B2
公开(公告)日：2003-08-19
申请号：US10020574
申请日：2001-12-18
申请人： Hideki Fujiwara , Manabu Nishimoto , Isamu Miyamoto , Hiroshi Morita
发明人： Hideki Fujiwara , Manabu Nishimoto , Isamu Miyamoto , Hiroshi Morita
IPC分类号： C30B1500
CPC分类号： C30B29/06 , C30B15/305
摘要： A method for producing a silicon single crystal, the method being capable of suppressing the dislocation of a single crystal. When a silicon single crystal is produced by a Czochralski method in which a horizontal magnetic field or a cusp magnetic field is applied and the single crystal during growth is dislocated, the single crystal with dislocations is dissolved in a nonmagnetic field condition and thereafter a magnetic field is applied again to pull up the silicon single crystal. The flow rate of argon gas is designed to be 100 L/min or more and the pressure in a furnace is designed to be 6700 pa or less when the single crystal with dislocations is dissolved.

6. 发明授权

US08460463B2 Silicon wafer and method for producing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US08460463B2
公开(公告)日：2013-06-11
申请号：US12544448
申请日：2009-08-20
申请人： Shigeru Umeno , Manabu Nishimoto , Masataka Hourai
发明人： Shigeru Umeno , Manabu Nishimoto , Masataka Hourai
IPC分类号： C30B15/00 , C30B21/06
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B15/305 , C30B29/06 , C30B30/04 , C30B31/20 , C30B33/02 , H01L21/02008 , H01L21/261 , H01L21/3221 , H01L29/66325
摘要： A silicon wafer is produced through the steps of forming a silicon ingot by a CZ method with an interstitial oxygen concentration of not more than 7.0×1017 atoms/cm3 and with a diameter of a COP occurring region not more than a diameter of a crystal, slicing a wafer from the silicon ingot after doping the silicon ingot with phosphorus, forming a polysilicon layer or a strained layer on one main surface of the wafer, and mirror polishing the other main surface of the wafer.
摘要翻译：通过以间隔氧浓度为7.0×10 17原子/ cm 3以下且COP发生区域的直径不大于晶体直径的CZ法形成硅锭的步骤来制造硅晶片，在用磷掺杂硅锭之后，从硅锭切片晶片，在晶片的一个主表面上形成多晶硅层或应变层，并对晶片的另一个主表面进行镜面抛光。

7. 发明申请

US20100051945A1 SILICON WAFER AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20100051945A1
公开(公告)日：2010-03-04
申请号：US12544448
申请日：2009-08-20
申请人： Shigeru Umeno , Manabu Nishimoto , Masataka Hourai
发明人： Shigeru Umeno , Manabu Nishimoto , Masataka Hourai
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/3225 , C30B15/203 , C30B15/206 , C30B15/305 , C30B29/06 , C30B30/04 , C30B31/20 , C30B33/02 , H01L21/02008 , H01L21/261 , H01L21/3221 , H01L29/66325
摘要： A silicon wafer is produced through the steps of forming a silicon ingot by a CZ method with an interstitial oxygen concentration of not more than 7.0×1017 atoms/cm3 and with a diameter of a COP occurring region not more than a diameter of a crystal, slicing a wafer from the silicon ingot after doping the silicon ingot with phosphorus, forming a polysilicon layer or a strained layer on one main surface of the wafer, and mirror polishing the other main surface of the wafer.
摘要翻译：通过以间隔氧浓度为7.0×10 17原子/ cm 3以下且COP发生区域的直径不大于晶体直径的CZ法形成硅锭的步骤来制造硅晶片，在用磷掺杂硅锭之后，从硅锭切片晶片，在晶片的一个主表面上形成多晶硅层或应变层，并对晶片的另一个主表面进行镜面抛光。

8. 发明申请

US20100024717A1 Reversed action diameter control in a semiconductor crystal growth system 审中-公开
标题翻译：半导体晶体生长系统中的反向动作直径控制
公开(公告)号：US20100024717A1
公开(公告)日：2010-02-04
申请号：US12221224
申请日：2008-07-31
申请人： Benno Orschel , Manabu Nishimoto
发明人： Benno Orschel , Manabu Nishimoto
IPC分类号： C30B15/22 , C30B35/00
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008
摘要： A semiconductor crystal growth method includes pulling a crystal from melt in a crucible at a nominal pull speed and generating a crucible lift signal to compensate reduction in melt level in the crucible. Based on diameter of the crystal, the method includes generating a correction signal and combining the crucible lift signal and the correction signal to keep the crystal diameter substantially constant.
摘要翻译：半导体晶体生长方法包括以标称拉伸速度从坩埚中的熔体中拉出晶体并产生坩埚提升信号以补偿坩埚中的熔融水平的降低。基于晶体的直径，该方法包括产生校正信号并组合坩埚提升信号和校正信号以保持晶体直径基本恒定。

9. 发明授权

US5156807A Method for improving machinability of titanium and titanium alloys and free-cutting titanium alloys 失效
标题翻译：提高钛和钛合金和自由切割钛合金的机械性能的方法
公开(公告)号：US5156807A
公开(公告)日：1992-10-20
申请号：US769253
申请日：1991-10-01
申请人： Tatsuo Nagata , Wataru Takahashi , Manabu Nishimoto , Shiroh Kitayama , Yoshihito Sugimoto
发明人： Tatsuo Nagata , Wataru Takahashi , Manabu Nishimoto , Shiroh Kitayama , Yoshihito Sugimoto
IPC分类号： C22C14/00
CPC分类号： C22C14/00
摘要： The machinability of titanium or a titanium alloy is improved without adversely affecting the hot workability and fatigue strength or corrosion resistance by addition of P: 0.01-1.0% along with one or both of S: 0.01-1.0% and Ni: 0.01-2.0%, or along with S: 0.01-1.0%, Ni: 0.01-2.0%, and REM: 0.01-5.0%, on a weight basis.

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