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1. 发明授权

US5798833A Rotation speed measuring machine for flying globe 失效
标题翻译：用于飞行地球仪的旋转速度测量机
公开(公告)号：US5798833A
公开(公告)日：1998-08-25
申请号：US665691
申请日：1996-06-18
申请人： Masahide Onuki , Satoru Kinuhata , Yuichi Takeuchi , Yoshiaki Miyamoto , Tetsuo Yamaguchi
发明人： Masahide Onuki , Satoru Kinuhata , Yuichi Takeuchi , Yoshiaki Miyamoto , Tetsuo Yamaguchi
IPC分类号： A63B43/06 , A63B69/36 , G01P3/48 , G01P3/486 , G01S17/50 , A63B57/00
CPC分类号： A63B24/0021 , A63B69/3658 , G01P3/48 , G01P3/486 , A63B2024/0034 , A63B2102/02 , A63B2207/02 , A63B2220/35 , A63B2220/805 , A63B2220/806 , A63B2220/807 , A63B43/06 , G01S17/50
摘要： A rotation speed measuring machine for a flying globe is formed of a light projecting device 10 projecting light on a measurement conducting area A which is a space including an expected flying route of a flying globe B after the globe has been hit at a hitting position, a light receiving device 20 which receives reflection light from the flying globe flying in the measurement conducting area A and which outputs a signal according to the fluctuation of the amount of reflected light, and a rotational speed detecting means 30 detecting the rotational speed of the flying globe B based on the output signal from the light receiving device 20 in order to measure the rotational speed of the flying globe B by putting a mark M having a light reflectance rate different from the reflectance rate of the surface texture on a part of the surface of the flying globe B and by detecting the amount of reflected light from the mark. The amount of spin of the flying globe B is measured at around the highest point of the flight locus.
摘要翻译：用于飞球的旋转速度测量机由射出装置10形成，该投光装置10将光投射在测量导电区域A上，测量导电区域A是在击球位置之后包括飞球体B的预期飞行路线的空间，接收来自飞球的反射光在测量导电区域A中飞行并且根据反射光量的波动输出信号的光接收装置20，以及检测飞行的转速的转速检测装置30 基于来自光接收装置20的输出信号的B球，以便通过将具有与表面纹理的反射率不同的光反射率的标记M放置在表面的一部分上来测量飞球B的旋转速度并且通过检测来自标记的反射光的量。在飞行轨迹的最高点附近测量飞球B的旋转量。

2. 发明授权

US08901573B2 Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US08901573B2
公开(公告)日：2014-12-02
申请号：US14129998
申请日：2012-08-08
申请人： Yuichi Takeuchi , Naohiro Suzuki
发明人： Yuichi Takeuchi , Naohiro Suzuki
IPC分类号： H01L29/15 , H01L21/336 , H01L21/265 , H01L29/78 , H01L27/098 , H01L29/66 , H01L29/06 , H01L29/16 , H01L21/04 , H01L29/808 , H01L29/10
CPC分类号： H01L21/265 , H01L21/0465 , H01L27/098 , H01L29/0619 , H01L29/063 , H01L29/0638 , H01L29/0661 , H01L29/0696 , H01L29/1025 , H01L29/1066 , H01L29/1608 , H01L29/66068 , H01L29/66909 , H01L29/78 , H01L29/8083
摘要： A semiconductor device includes a silicon carbide semiconductor substrate, a transistor formed in a cell region of the semiconductor substrate, and a voltage-breakdown-resistant structure formed in a region which surrounds an outer periphery of the cell region. The semiconductor substrate includes a first conductivity type substrate, a first conductivity type drift layer on the first conductivity type substrate, a second conductivity type layer on the drift layer, and a first conductivity type layer on the second conductivity type layer. The voltage-breakdown-resistant structure includes a first recess which surrounds the outer periphery of the cell region and reaches the drift layer, a trench located at a side surface of the recess on an inner periphery of the recess, and a second conductivity type buried layer buried in the trench to provide the side surface of the first recess.
摘要翻译：半导体器件包括碳化硅半导体衬底，形成在半导体衬底的单元区域中的晶体管，以及形成在围绕电池区域的外周的区域中的耐电压击穿结构。半导体衬底包括第一导电类型衬底，第一导电类型衬底上的第一导电类型漂移层，漂移层上的第二导电类型层和第二导电类型层上的第一导电类型层。耐电压结构包括围绕电池区域的外周并到达漂移层的第一凹部，位于凹部的内周上的凹部的侧表面处的沟槽，以及第二导电类型埋置埋置在沟槽中以提供第一凹部的侧表面。

3. 发明申请

US20140145212A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20140145212A1
公开(公告)日：2014-05-29
申请号：US14129998
申请日：2012-08-08
申请人： Yuichi Takeuchi , Naohiro Suzuki
发明人： Yuichi Takeuchi , Naohiro Suzuki
IPC分类号： H01L29/06 , H01L29/66 , H01L21/265
CPC分类号： H01L21/265 , H01L21/0465 , H01L27/098 , H01L29/0619 , H01L29/063 , H01L29/0638 , H01L29/0661 , H01L29/0696 , H01L29/1025 , H01L29/1066 , H01L29/1608 , H01L29/66068 , H01L29/66909 , H01L29/78 , H01L29/8083
摘要： A semiconductor device includes a silicon carbide semiconductor substrate, a transistor formed in a cell region of the semiconductor substrate, and a voltage-breakdown-resistant structure formed in a region which surrounds an outer periphery of the cell region. The semiconductor substrate includes a first conductivity type substrate, a first conductivity type drift layer on the first conductivity type substrate, a second conductivity type layer on the drift layer, and a first conductivity type layer on the second conductivity type layer. The voltage-breakdown-resistant structure includes a first recess which surrounds the outer periphery of the cell region and reaches the drift layer, a trench located at a side surface of the recess on an inner periphery of the recess, and a second conductivity type buried layer buried in the trench to provide the side surface of the first recess.
摘要翻译：半导体器件包括碳化硅半导体衬底，形成在半导体衬底的单元区域中的晶体管，以及形成在围绕电池区域的外周的区域中的耐电压击穿结构。半导体衬底包括第一导电类型衬底，第一导电类型衬底上的第一导电类型漂移层，漂移层上的第二导电类型层和第二导电类型层上的第一导电类型层。耐电压结构包括围绕电池区域的外周并到达漂移层的第一凹部，位于凹部的内周上的凹部的侧表面处的沟槽，以及第二导电类型埋置埋置在沟槽中以提供第一凹部的侧表面。

4. 发明授权

US08252135B2 Decorative molded article and method for producing the same 失效
标题翻译：装饰成型品及其制造方法
公开(公告)号：US08252135B2
公开(公告)日：2012-08-28
申请号：US12674316
申请日：2008-09-17
申请人： Yuichi Takeuchi , Yoshitomo Nagata , Kazuhiko Moriya , Yoko Toda , Nobuo Tan
发明人： Yuichi Takeuchi , Yoshitomo Nagata , Kazuhiko Moriya , Yoko Toda , Nobuo Tan
IPC分类号： B32B37/00
CPC分类号： B44C1/175 , B44C3/00 , Y10T428/24802
摘要： A decorative molded article which is obtained by transferring hydraulically a hydraulic transfer film comprising a transfer layer including at least two layers of a curable resin layer with an active energy ray and a printed design layer such that the curable resin layer with an ionization radiation becomes a surface layer, wherein the printed design layer comprises a layer printed with a design to be raised which is obtained by using an ink containing an inorganic pigment having a degree of swelling of 200% or more, and the surface of the transfer layer has the raised design corresponding to the design of the layer printed with a design to be raised; and a method for producing a decorative molded article having a raised portion, after a hydraulic transfer film is activated and transferred onto a product to be transferred, the hydraulic transfer film includes a support film, and a printed design layer having a curable resin layer and a layer printed with a design to be raised, which is obtained by using an ink containing an inorganic pigment having a degree of swelling of 200% or more, and the printed design layer does not include a solid print layer obtained by using an ink containing an inorganic pigment having a degree of swelling of 200% or more; the curable resin layer is semi-cured; the support film is removed from the transfer layer, the transfer layer is dried, and the curable resin layer is completely cured.
摘要翻译：一种装饰成型品，其通过水力转印包含具有至少两层可固化树脂层的转印层和活性能量射线和印刷图案层的液压转印膜，使得具有电离辐射的固化性树脂层变为表面层，其中所述印刷图案层包括通过使用含有膨胀度为200％以上的无机颜料的油墨而获得的待升高设计的层，并且所述转印层的表面具有凸起设计对应于印刷设计的图案设计; 以及制造具有凸起部分的装饰成型品的方法，在液压转印膜被活化并转移到待转印的产品上之后，水转印膜包括支撑膜和具有可固化树脂层的印刷设计层和通过使用含有膨润度为200％以上的无机颜料的油墨而印刷的要设置的层叠层，印刷图案层不包含通过使用含有具有200％以上的膨润度的无机颜料; 固化树脂层半固化; 从转印层除去支撑膜，干燥转印层，使固化性树脂层完全固化。

5. 发明申请

US20110189445A1 DECORATIVE MOLDED ARTICLE AND METHOD FOR PRODUCING THE SAME 失效
标题翻译：装饰成型品及其制造方法
公开(公告)号：US20110189445A1
公开(公告)日：2011-08-04
申请号：US12674316
申请日：2008-09-17
申请人： Yuichi Takeuchi , Yoshitomo Nagata , Kazuhiko Moriya , Yoko Toda , Nobuo Tan
发明人： Yuichi Takeuchi , Yoshitomo Nagata , Kazuhiko Moriya , Yoko Toda , Nobuo Tan
IPC分类号： B44C1/175 , B32B3/10
CPC分类号： B44C1/175 , B44C3/00 , Y10T428/24802
摘要： A decorative molded article which is obtained by transferring hydraulically a hydraulic transfer film comprising a transfer layer including at least two layers of a curable resin layer with an active energy ray and a printed design layer such that the curable resin layer with an ionization radiation becomes a surface layer, wherein the printed design layer comprises a layer printed with a design to be raised which is obtained by using an ink containing an inorganic pigment having a degree of swelling of 200% or more, and the surface of the transfer layer has the raised design corresponding to the design of the layer printed with a design to be raised; and a method for producing a decorative molded article having a raised portion, after a hydraulic transfer film is activated and transferred onto a product to be transferred, the hydraulic transfer film includes a support film, and a printed design layer having a curable resin layer and a layer printed with a design to be raised, which is obtained by using an ink containing an inorganic pigment having a degree of swelling of 200% or more, and the printed design layer does not include a solid print layer obtained by using an ink containing an inorganic pigment having a degree of swelling of 200% or more; the curable resin layer is semi-cured; the support film is removed from the transfer layer, the transfer layer is dried, and the curable resin layer is completely cured.
摘要翻译：一种装饰成型品，其通过水力转印包含具有至少两层可固化树脂层的转印层和活性能量射线和印刷图案层的液压转印膜，使得具有电离辐射的固化性树脂层变为表面层，其中所述印刷图案层包括通过使用含有膨胀度为200％以上的无机颜料的油墨而获得的待升高设计的层，并且所述转印层的表面具有凸起设计对应于印刷设计的图案设计; 以及制造具有凸起部分的装饰成型品的方法，在液压转印膜被活化并转移到待转印的产品上之后，水转印膜包括支撑膜和具有可固化树脂层的印刷设计层和通过使用含有膨润度为200％以上的无机颜料的油墨而印刷的要设置的层叠层，印刷图案层不包含通过使用含有具有200％以上的膨润度的无机颜料; 固化树脂层半固化; 从转印层除去支撑膜，干燥转印层，使固化性树脂层完全固化。

6. 发明授权

US07541300B2 Silicon carbide semiconductor device and method for manufacturing the same 有权
公开(公告)号：US07541300B2
公开(公告)日：2009-06-02
申请号：US11826070
申请日：2007-07-12
申请人： Malhan Rajesh Kumar , Yuichi Takeuchi
发明人： Malhan Rajesh Kumar , Yuichi Takeuchi
IPC分类号： H01L21/00
CPC分类号： H01L29/7828 , H01L29/1608 , H01L29/66666 , H01L29/7391 , H01L29/7397 , Y10S438/931
摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; a trench penetrating the second and the third semiconductor layers to reach the first semiconductor layer; a channel layer on a sidewall and a bottom of the trench; an oxide film on the channel layer; a gate electrode on the oxide film; a first electrode connecting to the third semiconductor layer; and a second electrode connecting to the silicon carbide substrate. A position of a boundary between the first semiconductor layer and the second semiconductor layer is disposed lower than an utmost lowest position of the oxide film.

7. 发明申请

US20080014702A1 Silicon carbide semiconductor device and method for manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US20080014702A1
公开(公告)日：2008-01-17
申请号：US11826070
申请日：2007-07-12
申请人： Malhan Kumar , Yuichi Takeuchi
发明人： Malhan Kumar , Yuichi Takeuchi
IPC分类号： H01L21/336
CPC分类号： H01L29/7828 , H01L29/1608 , H01L29/66666 , H01L29/7391 , H01L29/7397 , Y10S438/931
摘要： A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; a trench penetrating the second and the third semiconductor layers to reach the first semiconductor layer; a channel layer on a sidewall and a bottom of the trench; an oxide film on the channel layer; a gate electrode on the oxide film; a first electrode connecting to the third semiconductor layer; and a second electrode connecting to the silicon carbide substrate. A position of a boundary between the first semiconductor layer and the second semiconductor layer is disposed lower than an utmost lowest position of the oxide film.
摘要翻译：碳化硅半导体器件包括：具有碳化硅衬底，第一半导体层，第二半导体层和第三半导体层的半导体衬底; 穿过第二和第三半导体层的沟槽到达第一半导体层; 在沟槽的侧壁和底部上的沟道层; 沟道层上的氧化膜; 氧化膜上的栅电极; 连接到第三半导体层的第一电极; 以及连接到碳化硅衬底的第二电极。第一半导体层和第二半导体层之间的边界的位置被设置为低于氧化膜的最低位置。

8. 发明申请

US20060284217A1 Silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件
公开(公告)号：US20060284217A1
公开(公告)日：2006-12-21
申请号：US11501777
申请日：2006-08-10
申请人： Rajesh Kumar , Yuichi Takeuchi , Mitsuhiro Kataoka , Suhail Jeremy , Andrei Mihaila , Florin Udrea
发明人： Rajesh Kumar , Yuichi Takeuchi , Mitsuhiro Kataoka , Suhail Jeremy , Andrei Mihaila , Florin Udrea
IPC分类号： H01L29/80
CPC分类号： H01L29/8083 , H01L29/1608
摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.
摘要翻译：碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。沟槽沿预定的延伸方向延伸。第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。第二部分垂直突出成为梳形。第三部分延伸到延伸方向。第四部分垂直突出成梳状，并且电连接到源层。每个第二部分通过接触孔连接到第二栅极层。

9. 发明申请

US20060205195A1 Method of forming an ohmic contact in wide band semiconductor 有权
标题翻译：在宽带半导体中形成欧姆接触的方法
公开(公告)号：US20060205195A1
公开(公告)日：2006-09-14
申请号：US11159264
申请日：2005-06-23
申请人： Rajesh Malhan , Yuichi Takeuchi , Irina Nikitina , Konstantin Vassilevski , Nicholas Wright , Alton Horsfall
发明人： Rajesh Malhan , Yuichi Takeuchi , Irina Nikitina , Konstantin Vassilevski , Nicholas Wright , Alton Horsfall
IPC分类号： H01L21/28
CPC分类号： H01L29/7802 , H01L21/0485 , H01L29/41766 , H01L29/45 , H01L29/66068 , H01L29/7395
摘要： A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction between the substrate and the deposited metal that forms a modified layer in the substrate having modified properties different than the substrate, and by-products composed of a silicide and a nanocrystalline graphite layer; selectively etching the substrate to remove one or more of the by-products of the solid state chemical reaction from a surface of the substrate; and depositing a metal film composed of a transition group metal over the modified layer on the substrate to form the ohmic contact. The modified layer permits formation of the ohmic contact without high temperature annealing after depositing the metal film.
摘要翻译：在由宽带隙半导体材料构成的衬底上形成欧姆接触的方法包括：在衬底上沉积过渡金属组金属; 在高温下使基板退火，从而在基板和沉积金属之间产生固态化学反应，所述金属在衬底中形成改性的特性，其具有不同于衬底的改性，以及由硅化物和纳米晶体石墨层组成的副产物 ; 选择性地蚀刻所述基板以从所述基板的表面去除所述固态化学反应的一种或多种副产物; 以及在所述基板上在所述改性层上沉积由过渡金属组成的金属膜以形成欧姆接触。在沉积金属膜之后，改性层允许形成欧姆接触而不进行高温退火。

10. 发明授权

US06363988B1 Manufacturing apparatus for single-wire bead 有权
标题翻译：单丝珠的制造装置
公开(公告)号：US06363988B1
公开(公告)日：2002-04-02
申请号：US09567265
申请日：2000-05-09
申请人： Takuya Yasufuku , Yuichi Takeuchi
发明人： Takuya Yasufuku , Yuichi Takeuchi
IPC分类号： B29D3048
CPC分类号： B29D30/48 , B29D2030/0044 , B29D2030/482
摘要： A manufacturing apparatus for single-wire bead provided with a winding device winding a wire onto a drum to form a formed bead, a thread winding device winding a thread to both ends of the wire on approximately same position in a circumferencial direction of the formed bead to form an intermediate bead, an apex fitting device fitting an apex to the intermediate bead to form a finished bead, and having a transfering device reciprocating between a first position and a second position. On the first position, the formed bead is taken out of the winding device and the intermediate bead is taken out of the thread winding device. And, on the second position, the formed bead is transferred to the thread winding device and the intermediate bead is transferred to the apex fitting device.
摘要翻译：一种用于单线珠的制造装置，其具有将线缠绕在滚筒上以形成成形的卷边的卷绕装置;线圈绕线装置，其在形成的珠的圆周方向上的大致相同的位置处将线缠绕在线的两端以形成中间珠，顶点装配装置，其将顶点装配到中间珠，以形成成品珠，并且具有在第一位置和第二位置之间往复运动的传送装置。在第一位置，将成形的胎圈从卷绕装置中取出，将中间胎圈从卷绕装置中取出。并且，在第二位置，将成形的胎圈转移到卷线装置，将中间胎圈转移到顶点装配装置。

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