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1. 发明申请

US20110048757A1 HERMETIC SEALING CAP 有权
标题翻译：口腔封口帽
公开(公告)号：US20110048757A1
公开(公告)日：2011-03-03
申请号：US12990719
申请日：2009-01-30
申请人： Masaharu Yamamoto , Junji Hira
发明人： Masaharu Yamamoto , Junji Hira
IPC分类号： H05K5/06
CPC分类号： H01L23/06 , H01L23/10 , H01L2224/16225 , H01L2924/01079 , H01L2924/16195
摘要： A more thinnable hermetic sealing cap can be provided. This hermetic sealing cap (10) is employed for an electronic component housing package (100) housing an electronic component (40) and includes a cap body portion (1) mainly composed of Ti.
摘要翻译：可以提供更薄的密封盖。这种气密密封盖（10）用于容纳电子部件（40）的电子部件壳体封装（100），并且包括主要由Ti构成的盖主体部分（1）。

2. 发明申请

US20080271908A1 Hermetic Sealing Cap, Method of Manufacturing Hermetic Sealing Cap and Electronic Component Storage Package 审中-公开
标题翻译：密封密封帽，密封密封盖和电子元件储存包装制造方法
公开(公告)号：US20080271908A1
公开(公告)日：2008-11-06
申请号：US10568075
申请日：2005-09-26
申请人： Masaharu Yamamoto , Kenji Takano , Junji Hira
发明人： Masaharu Yamamoto , Kenji Takano , Junji Hira
IPC分类号： H05K5/06 , B05D5/12
CPC分类号： H03H9/1014 , H01L23/06 , H01L23/10 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/16195 , H03H9/1071 , H01L2924/00 , H01L2224/0401
摘要： Cap for airtight sealing (1) that not only suppresses any deterioration of the properties of electronic parts (20) to thereby reduce material costs but also enables use of Pb-free solders, and that is capable of suppressing any airtightness deterioration. This cap for airtight sealing comprises low thermal expansion layer (2); Ni—Co alloy layer (3) superimposed on the surface of the low thermal expansion layer and composed mainly of Ni wherein a diffusion acceleration material is contained; Ni layer (4) superimposed on the surface of the Ni—Co alloy layer; and solder layer (5) superimposed on the surface of the Ni layer at regions for bonding of electronic part accommodation member (10) and composed mainly of Sn. The Ni layer has the functions of not only suppressing any diffusion of the Ni—Co alloy layer into the solder layer at about 235° C. (first temperature) but also at bonding of the solder layer with the electronic part accommodation member at about 300° to about 320° C. (second temperature), diffusing the Ni—Co alloy layer via the Ni layer into the solder layer.
摘要翻译：气密密封盖（1）不仅可以抑制电子部件（20）的性能的劣化，从而降低材料成本，而且能够使用无铅焊料，并且能够抑制任何气密性劣化。用于密封的该盖包括低热膨胀层（2）; Ni-Co合金层（3）叠加在低热膨胀层的表面上，主要由Ni构成，其中包含扩散加速材料; Ni层（4）叠加在Ni-Co合金层的表面上; 和焊料层（5），其叠加在Ni层的表面上，用于键合电子部件容纳部件（10）并且主要由Sn组成的区域。 Ni层的功能不仅在约235℃（第一温度）下抑制Ni-Co合金层在焊料层中的扩散，而且在焊料层与电子部件容纳部件的接合处约为300℃ °至约320℃（第二温度），通过Ni层将Ni-Co合金层扩散到焊料层中。

3. 发明授权

US08431820B2 Hermetic sealing cap 有权
标题翻译：密封盖
公开(公告)号：US08431820B2
公开(公告)日：2013-04-30
申请号：US12990719
申请日：2009-01-30
申请人： Masaharu Yamamoto , Junji Hira
发明人： Masaharu Yamamoto , Junji Hira
IPC分类号： H05K5/06
CPC分类号： H01L23/06 , H01L23/10 , H01L2224/16225 , H01L2924/01079 , H01L2924/16195
摘要： A more thinnable hermetic sealing cap can be provided. This hermetic sealing cap (10) is employed for an electronic component housing package (100) housing an electronic component (40) and includes a cap body portion (1) mainly composed of Ti.
摘要翻译：可以提供更薄的密封盖。这种气密密封盖（10）用于容纳电子部件（40）的电子部件壳体封装（100），并且包括主要由Ti构成的盖主体部分（1）。

4. 发明授权

US09350007B2 Connection plate for battery terminals and method for manufacturing connection plate for battery terminals 有权
标题翻译：电池端子用连接板及电池端子用连接板的制造方法
公开(公告)号：US09350007B2
公开(公告)日：2016-05-24
申请号：US13981768
申请日：2012-01-19
申请人： Yoshimitsu Oda , Masaharu Yamamoto , Masaaki Ishio
发明人： Yoshimitsu Oda , Masaharu Yamamoto , Masaaki Ishio
IPC分类号： H01M2/20 , H01R11/11 , H01M10/0525
CPC分类号： H01M2/202 , H01M2/206 , H01M10/0525 , H01R11/11 , Y02T10/7011 , Y10T29/49224
摘要： A connection plate for battery terminals capable of inhibiting a first member and a second member from being detached from each other is provided. This bus bar 2 (connection plate for battery terminals) includes a first member (3) including a first hole (30) and an embedding hole (31), made of first metal and a second member (4) having a second hole (42), including a base (40) made of second metal, embedded in the embedding hole of the first member, while an intermetallic compound layer (5) containing at least one of the first metal and the second metal is formed on an interface between the embedding hole of the first member and the second member.
摘要翻译：提供了能够抑制第一构件和第二构件彼此分离的用于电池端子的连接板。该汇流条2（电池端子用连接板）具备由第一金属构成的具备第一孔（30）和嵌入孔（31）的第一构件（3）和具有第二孔（42）的第二构件），包括嵌入在第一构件的嵌入孔中的由第二金属制成的基座（40），同时在第一金属和第二金属之间的界面上形成包含第一金属和第二金属中的至少一个的金属间化合物层（5）第一构件和第二构件的嵌入孔。

5. 发明申请

US20090301749A1 HERMETIC SEALING CAP, ELECTRONIC COMPONENT ACCOMMODATION PACKAGE, AND METHOD FOR PRODUCING HERMETIC SEALING CAP 有权
标题翻译：密封密封盖，电子元件住宿包装及生产密封密封垫的方法
公开(公告)号：US20090301749A1
公开(公告)日：2009-12-10
申请号：US11915914
申请日：2007-02-13
申请人： Tsuyoshi Tanaka , Masaharu Yamamoto
发明人： Tsuyoshi Tanaka , Masaharu Yamamoto
IPC分类号： H05K5/06 , B44C1/22 , B23K1/20
CPC分类号： H01L23/10 , H01L21/4817 , H01L23/06 , H01L2224/16 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1617 , H01L2924/16195 , H01L2924/1627
摘要： A hermetic sealing cap can be provided which is capable of suppressing that a production process becomes complicated, and additionally of suppressing that a solder layer wetly spreads inward on a sealing surface. This hermetic sealing cap (1, 30) includes a base member (2), a first plating layer (3, 31) that is formed on the surface of the base member, and a second plating layer (4, 32) that is formed on the surface of the first plating layer and is less oxidized than the first plating layer, wherein a part of the second plating layer in an area (S1, S5) inside an area (S2, S6) to which an electronic component accommodation member is joined is removed so that the surface of the first plating layer is exposed, and the surface of the first plating layer that is exposed in the area from which the second plating layer is removed is oxidized.
摘要翻译：可以提供一种能够抑制生产过程变得复杂的气密密封盖，另外抑制焊料层在密封表面上向内湿润地扩展。该气密密封盖（1,30）包括基体（2），形成在基体表面上的第一镀层（3,31）和形成的第二镀层（4,32）在第一镀层的表面上比第一镀层氧化少，其中在电子部件容纳部件的区域（S2，S6）内的区域（S1，S5）内的区域（S1，S5）中的部分第二镀层被除去，使得第一镀层的表面被暴露，并且暴露在从其去除第二镀层的区域中的第一镀层的表面被氧化。

6. 发明授权

US07173331B2 Hermetic sealing cap and method of manufacturing the same 有权
标题翻译：密封盖及其制造方法
公开(公告)号：US07173331B2
公开(公告)日：2007-02-06
申请号：US10926102
申请日：2004-08-26
申请人： Shigeji Matsubara , Masaharu Yamamoto , Toshiaki Fukusako , Yoshito Tagashira
发明人： Shigeji Matsubara , Masaharu Yamamoto , Toshiaki Fukusako , Yoshito Tagashira
IPC分类号： H01L23/12
CPC分类号： H01L21/50 , H01L23/04 , H01L23/053 , H01L23/10 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/16152 , H01L2924/1617 , H01L2924/16195 , H01L2924/163 , Y10S257/924
摘要： A hermetic sealing cap member capable of suppressing deterioration of characteristics of an electronic component resulting from a sealant such as solder coming into contact with the electronic component in a package is obtained. This hermetic sealing cap, which is a hermetic sealing cap employed for an electronic component storing package for storing an electronic component (5, 34), comprises a hermetic sealing cap member (11, 41), a first plating layer (12, 42) formed at least on a region other than a region of the hermetic sealing cap member formed with a sealant (3, 32) and a second plating layer (13, 43), formed on the region of the hermetic sealing cap member on which the sealant is arranged, containing a material superior in wettability with the sealant to the first plating layer.
摘要翻译：获得能够抑制由包装中的与电子部件接触的焊料等密封剂导致的电子部件的特性劣化的气密密封盖部件。作为用于存储电子部件（5,34）的电子部件存放包装的气密密封盖的气密密封盖包括气密密封盖部件（11,41），第一镀层（12,42）至少形成在形成有密封剂（3,32）和第二镀层（13,43）的气密密封帽构件的区域以外的区域上，所述密封剂构件形成在密封盖构件的区域上，密封剂被布置成含有与密封剂相比在第一镀层上润湿性优异的材料。

7. 发明授权

US06290746B1 Method of producing metal ball and semiconductor package 有权
标题翻译：金属球和半导体封装的生产方法
公开(公告)号：US06290746B1
公开(公告)日：2001-09-18
申请号：US09448447
申请日：1999-11-24
申请人： Masaharu Yamamoto
发明人： Masaharu Yamamoto
IPC分类号： B22P702
CPC分类号： B22F1/0048 , H05K3/3478
摘要： The purpose of the present invention is to improve releasability from the jig of a method of producing a minute metal ball by heating and melting and then cooling a metal piece of specific dimensions and further, to present a metal ball with very good dimensional accuracy and sphericity, even though diameter is minute. By means of the above-mentioned method, very good releasability between the metal ball and jig after melting and cooling is obtained and long-term use of the tool becomes possible by placing a metal piece on a jig with a layer of fine powder of BN, AlN or C having low wettability with the metal piece in between, or by making a layer of fine powder adhere to the surface of the metal piece and then placing this metal piece on the jig or shaking and arranging individual metal pieces in holes in the same. Moreover, the layer of fine powder on the jig or the surface of the metal piece used in the method of the present invention does not prevent spheroidising of the metal piece under surface tension during melting, and there is no deterioration of surface properties of the metal ball that is obtained and it is thereby possible to markedly improve dimensional accuracy and sphericity of the metal ball.
摘要翻译：本发明的目的是通过加热和熔化然后冷却特定尺寸的金属片来提高制造微小金属球的方法的夹具的脱模性，并且进一步提供具有非常好的尺寸精度和球形度的金属球，即使直径是微小的。通过上述方法，获得熔融冷却后金属球和夹具之间非常好的剥离性，并且通过将金属片放置在具有BN的细粉末层的夹具上，可以长期使用该工具，与金属片之间具有低润湿性的AlN或C，或者通过使金属片的表面附着细小的粉末层，然后将该金属片放置在夹具上或摇动并将各个金属片排列在孔中相同。此外，在本发明的方法中使用的夹具或金属片表面上的细粉末层在熔融期间不能防止金属片在表面张力下的球化，并且金属的表面性质不会劣化球，从而可以显着提高金属球的尺寸精度和球形度。

8. 发明授权

US5512769A High breakdown voltage semiconductor device and method of fabricating the same 失效
标题翻译：高击穿电压半导体器件及其制造方法
公开(公告)号：US5512769A
公开(公告)日：1996-04-30
申请号：US312671
申请日：1994-09-27
申请人： Masaharu Yamamoto
发明人： Masaharu Yamamoto
IPC分类号： H01L27/06 , H01L29/78 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7835 , H01L27/0629
摘要： A high breakdown voltage semiconductor device is constituted, in either a semiconductor substrate or a lightly doped well diffused layer having deep diffusion depth, of a heavily doped diffused layer as a heavily doped drain diffused layer, a lightly doped diffused layer having deeper diffusion depth that the heavily doped diffused layer, and a lightly doped diffused layer adjacent to the heavily doped diffused layer called as an offset diffused layer. The heavily doped diffused layer functions as a part of the drain diffused layer, and has depth around 0.3 to 0.6 micron meter, and impurity concentration of 10.sup.19 to 10.sup.20 impurities/cm.sup.3. The width of the heavily doped diffused layer is set to 4 to 5 micron meters or greater. If the width of the heavily doped diffused layer is set less than this value, the breakdown voltage at an edge is lowered, and thereby impairment of the breakdown voltage occurs. The lightly doped diffused layer also functions as a part of the drain diffused layer. The lightly doped diffused layer is arranged, in particular, to relax the gradient of the impurity concentration of the drain diffused layer due to the heavily doped diffused layer. If the impurity concentration of the lightly doped diffused layer is too low, the resistance becomes high, so that adequate current can not be obtained. In the high breakdown voltage transistor, a gate electrode is formed above the edge of the lightly doped diffused layer. The breakdown voltage of the device is determined by the size of the offset diffused layer and its impurity concentration.
摘要翻译：在作为重掺杂漏极扩散层的重掺杂扩散层的半导体衬底或具有深扩散深度的轻掺杂阱扩散层中的高击穿电压半导体器件构成具有较深扩散深度的轻掺杂扩散层，重掺杂扩散层以及与重掺杂扩散层相邻的轻掺杂扩散层称为偏移扩散层。重掺杂扩散层作为漏极扩散层的一部分起作用，其深度约为0.3至0.6微米，杂质浓度为1019至1020杂质/ cm3。重掺杂扩散层的宽度设定为4〜5微米或更大。如果重掺杂扩散层的宽度被设定为小于该值，则边缘处的击穿电压降低，从而发生击穿电压的损坏。轻掺杂扩散层还用作漏极扩散层的一部分。特别地，轻掺杂扩散层被布置为由于重掺杂扩散层而放宽了漏极扩散层的杂质浓度的梯度。如果轻掺杂扩散层的杂质浓度太低，则电阻变高，不能获得足够的电流。在高击穿电压晶体管中，在轻掺杂扩散层的边缘上方形成栅电极。器件的击穿电压由偏移扩散层的尺寸及其杂质浓度决定。

9. 发明授权

US08785029B2 Connection plate for battery terminals and method for manufacturing connection plate for battery terminals 有权
标题翻译：电池端子用连接板及电池端子用连接板的制造方法
公开(公告)号：US08785029B2
公开(公告)日：2014-07-22
申请号：US13996278
申请日：2011-12-07
申请人： Yoshimitsu Oda , Masaharu Yamamoto , Masaaki Ishio
发明人： Yoshimitsu Oda , Masaharu Yamamoto , Masaaki Ishio
IPC分类号： H01M2/20 , H01R43/02 , H01B1/02 , B21K23/04 , H01M10/0525
CPC分类号： H01M2/202 , B21K23/04 , H01B1/023 , H01B1/026 , H01M10/0525 , H01M2220/20 , H01R43/0221 , Y02E60/122 , Y02P70/54 , Y10T29/49204 , Y10T29/49213 , Y10T29/49224
摘要： A connection plate for battery terminals capable of inhibiting a base and a battery terminal connection portion from being detached from each other is provided. This connection plate for battery terminals (2) includes a battery terminal connection portion (4) fitted into a second hole (31) of a base (3) made of first metal, including a hole for connection (42) into which a second battery terminal (1b) is inserted and a flange portion (4b), while the battery terminal connection portion is constituted by at least a first layer (40) made of second metal, arranged on a side opposite to the base and a second layer (41) made of third metal, arranged between the base and the first layer.
摘要翻译：提供一种用于能够抑制基座和电池端子连接部分彼此分离的电池端子的连接板。该电池端子用连接板（2）具备嵌入第1金属制的基座（3）的第2孔（31）的电池端子连接部（4），该第2孔包括用于连接的孔（42），第2电池插入端子（1b）和凸缘部分（4b），而电池端子连接部分由至少由第二金属制成的第一层（40）构成，布置在与基座相对的一侧上，第二层（41 ）由第三金属制成，布置在基底和第一层之间。

10. 发明授权

US07790988B2 Hermetic sealing cap, electronic component accommodation package, and method for producing hermetic sealing cap 有权
标题翻译：密封盖，电子元件住宿包，以及密封盖生产方法
公开(公告)号：US07790988B2
公开(公告)日：2010-09-07
申请号：US11915914
申请日：2007-02-13
申请人： Tsuyoshi Tanaka , Masaharu Yamamoto
发明人： Tsuyoshi Tanaka , Masaharu Yamamoto
IPC分类号： H01L23/02 , H05K5/06
CPC分类号： H01L23/10 , H01L21/4817 , H01L23/06 , H01L2224/16 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1617 , H01L2924/16195 , H01L2924/1627
摘要： A hermetic sealing cap can be provided which is capable of suppressing that a production process becomes complicated, and additionally of suppressing that a solder layer wetly spreads inward on a sealing surface. This hermetic sealing cap (1, 30) includes a base member (2), a first plating layer (3, 31) that is formed on the surface of the base member, and a second plating layer (4, 32) that is formed on the surface of the first plating layer and is less oxidized than the first plating layer, wherein a part of the second plating layer in an area (S1, S5) inside an area (S2, S6) to which an electronic component accommodation member is joined is removed so that the surface of the first plating layer is exposed, and the surface of the first plating layer that is exposed in the area from which the second plating layer is removed is oxidized.
摘要翻译：可以提供一种能够抑制生产过程变得复杂的气密密封盖，另外抑制焊料层在密封表面上向内湿润地扩展。该气密密封盖（1,30）包括基体（2），形成在基体表面上的第一镀层（3,31）和形成的第二镀层（4,32）在第一镀层的表面上比第一镀层氧化少，其中在电子部件容纳部件的区域（S2，S6）内的区域（S1，S5）内的区域（S1，S5）中的部分第二镀层被除去，使得第一镀层的表面被暴露，并且暴露在从其去除第二镀层的区域中的第一镀层的表面被氧化。

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