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    • 7. 发明授权
    • Non-volatile memory device and transistor circuits on the same chip
    • 同一芯片上的非易失性存储器件和晶体管电路
    • US5239197A
    • 1993-08-24
    • US939853
    • 1992-09-02
    • Masaharu Yamamoto
    • Masaharu Yamamoto
    • H01L27/105
    • H01L27/105
    • This invention relates to a semiconductor device comprising an N-type semiconductor substrate, an intermediate breakdown voltage part comprised of a first P-type diffusion layer formed in the N-type semiconductor substrate, a high breakdown voltage part comprised of a second P-type diffusion layer formed in the N-type semiconductor substrate, and a transistor circuit part formed in the N-type semiconductor substrate. According to the invention, a semiconductor device capable of simultaneously forming plural functioning devices in a single semiconductor substrate, causing hardly any short channel effect, is obtained.
    • 本发明涉及一种包括N型半导体衬底的半导体器件,由在N型半导体衬底中形成的第一P型扩散层构成的中间击穿电压部分,由第二P型 形成在N型半导体衬底中的扩散层和形成在N型半导体衬底中的晶体管电路部分。 根据本发明,可以获得能够在单个半导体衬底中同时形成多个功能器件的几乎不产生短沟道效应的半导体器件。