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1. 发明授权

US5093063A Method of producing polyvinyl alcohol fibers 失效
标题翻译：生产聚乙烯醇纤维的方法
公开(公告)号：US5093063A
公开(公告)日：1992-03-03
申请号：US446732
申请日：1989-12-06
申请人： Masaharu Watanabe , Kenichi Tanimoto , Kazutaka Kooda , Naohiko Nagata , Keiichi Wakayama , Tsunetoshi Matsuda
发明人： Masaharu Watanabe , Kenichi Tanimoto , Kazutaka Kooda , Naohiko Nagata , Keiichi Wakayama , Tsunetoshi Matsuda
IPC分类号： D01D5/06 , D01F6/14
CPC分类号： D01D5/06 , D01F6/14 , Y10T428/2913
摘要： A high tenacity, high initial modulus polyvinyl alcohol fiber is produced by:(1) dissolving polyvinyl alcohol with a degree of polymerization of not less than 1,500 in a solvent capable of giving a 5 wt % polyvinyl alcohol solution and the solvent is further characterized in that the nuclear magnetic resonance spectrum measured at 50.degree. C. after storage of the solution at 50.degree. C. for 96 hours following preparation thereof is substantially identical with that measured at 50.degree. C. immediately after preparation thereof, with peaks for the three kinds of hydroxyl groups of polyvinyl alcohol being clearly distinguishable in each nuclear magnetic resonance spectrum,(ii) forming filaments by spinning the spinning solution under conditions which satisfy the requirementsDs.ltoreq.5.0 wherein Ds is the spinning stretch ratio defined as the ratio (V.sub.2 /V.sub.1) of the take off speed (V.sub.2) to the first take off roller speed (V.sub.1),(iii) subjecting the filaments thus-formed to multistage stretching in at least two stages either continuously with step (ii) or after temporarily winding up the filaments, wherein at least one stretching stage in the multistage stretching is conducted at a temperature of not lower than 200.degree. C. until the total stretch ratio amounts to not less than 15.

2. 发明授权

US4971861A Polyvinyl alcohol fiber and method of manufacture thereof 失效
标题翻译：聚乙烯醇纤维及其制造方法
公开(公告)号：US4971861A
公开(公告)日：1990-11-20
申请号：US138109
申请日：1987-12-28
申请人： Masaharu Watanabe , Kenichi Tanimoto , Kazutaka Kooda , Naohiko Nagata , Keiichi Wakayama , Tsunetoshi Matsuda
发明人： Masaharu Watanabe , Kenichi Tanimoto , Kazutaka Kooda , Naohiko Nagata , Keiichi Wakayama , Tsunetoshi Matsuda
IPC分类号： D01D5/06 , D01F6/14
CPC分类号： D01D5/06 , D01F6/14 , Y10T428/2913
摘要： A high tenacity, high intitial modulus polyvinyl alcohol fiber showing a high level of crystalline heat of fusion, characterized in that the fiber is made of polyvinyl alcohol having a degree of polymerization of not less than 1,500, has a tenacity of not less than 17 g/d and an initial modulus of elasticity of not less than 400 g/d and shows a crystalline heat of fusion of not less than 29 cal/g, and a method of producing said polyvinyl alcohol fiber comprising:(i) dissolving polyvinyl alcohol with a degree of polymerization of not less than 1,500 in a solvent capable of giving a 5 wt % polyvinyl alcohol solution and the solvent is further characterized in that the nuclear magnetic resonance spectrum measured at 50.degree. C. after storage of the solution at 50.degree. C. for 96 hours following preparation thereof is substantially identical with that measured at 50.degree. C. immediately after preparation thereof, with peaks for the three kinds of hydroxyl groups of polyvinyl alcohol being clearly distinguishable in each nuclear magnetic resonance spectrum,(ii) forming unstretched filaments by spinning the spinning solution under conditions which satisfy the requirementDs.ltoreq.5.0 wherein Ds is the spinning stretch ratio defined as the ratio (V.sub.2 V.sub.1) of the take off speed (V.sub.2) to the first take off roller speed (V.sub.1),(iii) subjecting the unstretched filaments thus-formed to multistage stretching in at least two stages either continuously with step (ii) or after temporarily winding up the frilaments, wherein at least one stretching stage in the multistage stretching is conducted at a temperature of not lower than 200.degree. C. until the total stretch ratio amounts to not less than 15.

3. 发明申请

US20090181158A1 Method of Producing Cell Culture Container 审中-公开
标题翻译：生产细胞培养容器的方法
公开(公告)号：US20090181158A1
公开(公告)日：2009-07-16
申请号：US12298155
申请日：2007-04-24
申请人： Takeshi Ikeya , Masaharu Watanabe , Kana Miyazaki , Toru Shibuya
发明人： Takeshi Ikeya , Masaharu Watanabe , Kana Miyazaki , Toru Shibuya
IPC分类号： B05D3/00
CPC分类号： C12M23/20 , C12M23/12
摘要： To produce a cell culture container which is suitable for use in, for example, biochemical experiments, clinical experiments, and research and development of drugs. The production of the cell culture container includes providing a cell culture container base 1 having a plurality of wells serving as regions for culturing cells; applying a hydrophilic photosensitive composition to the bottom surface of each of the wells, to thereby form a coating 3; subjecting the coating 3 to patternwise light exposure; and removing an uncured portion of the coating through development, to thereby yield a cell culture container having, on the bottom surface of each well, a patterned hydrophilic coating layer formed of a photo-cured product.
摘要翻译：生产适用于生物化学实验，临床实验和药物研发的细胞培养容器。细胞培养容器的制造包括提供具有多个作为培养细胞的区域的孔的细胞培养容器基底1; 将亲水性感光性组合物涂布到各孔的底面，由此形成涂层3; 对涂层3进行图案曝光; 通过显影除去未固化的涂层部分，从而得到细胞培养容器，其在每个孔的底表面上形成由光固化产物形成的图案化亲水涂层。

4. 发明授权

US06404597B1 Magnetic head device with feature protecting a conductive wire extending to a magnetic core 失效
标题翻译：磁头装置具有保护延伸到磁芯的导线的特征
公开(公告)号：US06404597B1
公开(公告)日：2002-06-11
申请号：US09605710
申请日：2000-06-27
申请人： Masaharu Watanabe
发明人： Masaharu Watanabe
IPC分类号： G11B548
CPC分类号： G11B5/48 , G11B5/17 , G11B5/53 , G11B5/531
摘要： A core chip includes a magnetic core having a magnetic gap and a coil formed around the magnetic core. A head base includes a first main face on which a wiring pattern is formed, and a second main face on which the core chip is mounted. A conductive wire derived from the coil is electrically connected by extending only via the first main face. One end portion of the first main face is slanted and the core chip is mounted on the one end portion of the second main face. A recess or a slit is formed on the slanted portion of the first main face to extend the conductive wire therein.
摘要翻译：核心芯片包括具有磁隙的磁芯和围绕磁芯形成的线圈。头基部包括形成有布线图案的第一主面和安装有芯片的第二主面。从线圈导出的导线通过仅经由第一主面而延伸而电连接。第一主面的一端部倾斜，芯片安装在第二主面的一端部。在第一主面的倾斜部分上形成凹部或狭缝，以使导电线在其中延伸。

5. 发明授权

US5598025A Semiconductor device comprises an impurity layer having boron ions in the form of clusters of icosahedron structure 失效
标题翻译：半导体器件包括具有二十面体结构的簇的形式的硼离子的杂质层
公开(公告)号：US5598025A
公开(公告)日：1997-01-28
申请号：US392481
申请日：1995-02-23
申请人： Atsushi Murakoshi , Ichiro Mizushima , Masaharu Watanabe , Masahiko Yoshiki
发明人： Atsushi Murakoshi , Ichiro Mizushima , Masaharu Watanabe , Masahiko Yoshiki
IPC分类号： H01L21/02 , H01L21/265 , H01L21/28 , H01L21/3215 , H01L21/70 , H01L29/04 , H01L29/167 , H01L29/307 , H01L29/227
CPC分类号： H01L21/26513 , H01L21/32155
摘要： An impurity diffusion layer shallow in diffusion depth and high in activity is formed in a semiconductor device. In the semiconductor device, clusters of icosahedron structure each composed of boron atoms are formed in the silicon crystal of the impurity layer of the semiconductor device so as to function as acceptors. Further, after the clusters of icosahedron structure each composed of 12 boron atoms have been formed by implanting boron ions at high concentration, the device is processed at temperature lower than 700.degree. C. to prevent the boron from being decreased due to combination with silicon. Since an impurity layer shallow in diffusion from the substrate surface and high in activity can be formed and further the clusters of icosahedron structure each composed of 12 boron atoms can be utilized as acceptors, it is possible to realize a high doping even in the manufacturing process for the devices not suitable for high temperature annealing.
摘要翻译：在半导体器件中形成扩散深浅且活性高的杂质扩散层。在半导体装置中，由半导体装置的杂质层的硅晶体形成由硼原子构成的二十面体结构的簇，作为受体。此外，在通过以高浓度注入硼离子形成每个由12个硼原子构成的二十面体结构的簇之后，在低于700℃的温度下处理器件，以防止由于与硅的组合而使硼降低。由于可以形成从衬底表面扩散浅的杂质层和高活性的杂质层，并且由12个硼原子组成的二十面体结构的簇可以用作受体，即使在制造过程中也可以实现高掺杂对于不适合高温退火的器件。

6. 发明授权

US4649408A Charge storage type semiconductor device and method for producing same 失效
标题翻译：电荷存储型半导体器件及其制造方法
公开(公告)号：US4649408A
公开(公告)日：1987-03-10
申请号：US551001
申请日：1983-11-15
申请人： Hirokazu Sekine , Katuhiko Morimune , Masaharu Watanabe , Nobuo Suzuki
发明人： Hirokazu Sekine , Katuhiko Morimune , Masaharu Watanabe , Nobuo Suzuki
IPC分类号： H01L21/324 , H01L27/108 , H01L27/148 , H01L29/10 , H01L29/32 , H01L29/768 , H01L29/78 , H01L27/02 , H01L27/14 , H01L29/167
CPC分类号： H01L27/14887 , H01L21/324 , H01L27/10805 , H01L29/1091 , H01L29/32 , H01L29/76841
摘要： A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions.
摘要翻译：一种电荷存储型半导体器件，包括半导体衬底和用于在衬底的那些部分中积累电荷的装置，所述装置位于衬底的一个主表面附近。基板具有高缺陷密度的缺陷区域和至少一个不存在晶体缺陷或低缺陷密度的无缺陷区域，并形成在至少基板主表面附近。缺陷区域防止不必要的少数载流子流入电荷存储区域。

7. 发明申请

US20110235898A1 MATCHING PROCESS IN THREE-DIMENSIONAL REGISTRATION AND COMPUTER-READABLE STORAGE MEDIUM STORING A PROGRAM THEREOF 审中-公开
标题翻译：三维注册和计算机可读存储介质的匹配过程存储其程序
公开(公告)号：US20110235898A1
公开(公告)日：2011-09-29
申请号：US13053819
申请日：2011-03-22
申请人： Masaharu Watanabe , Fumiaki Tomita
发明人： Masaharu Watanabe , Fumiaki Tomita
IPC分类号： G06K9/32
CPC分类号： G06T7/33 , G06T2207/10012
摘要： The matching process includes: finding first and second three-dimensional reconstruction point sets that contain three-dimensional position coordinates of segments, and first and second feature set that contain three-dimensional information regarding vertices of the segments, from image data of an object (S2 to S4); and matching the first feature set with the second feature set, thereby determining a corresponding point of the first and second three-dimensional reconstruction point sets (S5 to S10), wherein Step S5 carries out initial matching with respect to the segments; Step S6 selects a feature point from the first feature set; Step S7 specifies an adjustment region containing the selected feature point; Step S8 carries out fine adjustment of matching with respect to the segments within the adjustment region; and Steps S6 to S8 are performed at each increase of the adjustment region and at each selection of the feature point.
摘要翻译：匹配过程包括：从对象的图像数据（第一和第二特征集合）中找到包含段的三维位置坐标的第一和第二三维重构点集合以及包含关于段顶点的三维信息的第一和第二特征集 S2至S4）; 并且将所述第一特征集合与所述第二特征集匹配，从而确定所述第一和第二三维重构点集合的对应点（S5至S10），其中步骤S5针对所述片段执行初始匹配; 步骤S6从第一特征集中选择特征点; 步骤S7指定包含所选特征点的调整区域; 步骤S8对调整区域内的段进行匹配的微调整; 并且在调整区域的每次增加和特征点的每次选择时执行步骤S6至S8。

8. 发明授权

US5662843A Method for the production of polyolefin hollow fiber filter bundles 失效
标题翻译：聚烯烃中空纤维过滤束生产方法
公开(公告)号：US5662843A
公开(公告)日：1997-09-02
申请号：US571433
申请日：1995-12-13
申请人： Takashi Monzen , Masaharu Watanabe
发明人： Takashi Monzen , Masaharu Watanabe
IPC分类号： B01D63/00 , B01D63/02 , B01D71/26 , B29C41/14 , B29C70/84 , B01D67/00 , B01D69/08
CPC分类号： B29C70/845 , B01D63/022 , B01D63/023 , B29C2793/009 , B29C41/14 , B29K2023/00 , B29L2031/14
摘要： A filter element includes a bundle of hollow fibers made of first polyolefin. The bundle has at least one end sealed with second polyolefin having an average molecular weight in the range of 1,000 to 16,000. The filter element is produced by a method including the steps of fusing the second polyolefin having a fusion point lower than that of the first polyolefin, attaching the fused second polyolefin to at least one end of the bundle, allowing the attached second polyolefin to set, thereby providing the bundle with a sealed portion, and cutting off the leading end of the sealed portion.
摘要翻译：过滤元件包括由第一聚烯烃制成的中空纤维束。该束具有至少一端用平均分子量在1,000至16,000范围内的第二聚烯烃密封。过滤元件通过包括以下步骤的方法制备，该方法包括将熔点低于第一聚烯烃的熔点的第二聚烯烃熔合，将熔融的第二聚烯烃连接到束的至少一端，允许附着的第二聚烯烃固化，从而为束提供密封部分，并且切断密封部分的前端。

9. 发明授权

US5505858A Polyolefin filter element and method for the production thereof 失效
标题翻译：聚烯烃过滤元件及其制造方法
公开(公告)号：US5505858A
公开(公告)日：1996-04-09
申请号：US220195
申请日：1994-03-30
申请人： Takashi Monzen , Masaharu Watanabe
发明人： Takashi Monzen , Masaharu Watanabe
IPC分类号： B01D63/00 , B01D63/02 , B01D71/26 , B29C41/14 , B29C70/84
CPC分类号： B29C70/845 , B01D63/022 , B01D63/023 , B29C2793/009 , B29C41/14 , B29K2023/00 , B29L2031/14
摘要： A filter element includes a bundle of hollow fibers made of first polyolefin. The bundle has at least one end sealed with second polyolefin having an average molecular weight in the range of 1,000 to 16,000. The filter element is produced by a method including the steps of fusing the second polyolefin having a fusion point lower than that of the first polyolefin, attaching the fused second polyolefin to at least one end of the bundle, allowing the attached second polyolefin to set, thereby providing the bundle with a sealed portion, and cutting off the leading end of the sealed portion.
摘要翻译：过滤元件包括由第一聚烯烃制成的中空纤维束。该束具有至少一端用平均分子量在1,000至16,000范围内的第二聚烯烃密封。过滤元件通过包括以下步骤的方法制备，该方法包括将熔点低于第一聚烯烃的熔点的第二聚烯烃熔合，将熔融的第二聚烯烃连接到束的至少一端，允许附着的第二聚烯烃固化，从而为束提供密封部分，并且切断密封部分的前端。

10. 发明授权

US5413943A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5413943A
公开(公告)日：1995-05-09
申请号：US997363
申请日：1992-12-28
申请人： Atsushi Murakoshi , Ichiro Mizushima , Masaharu Watanabe , Masahiko Yoshiki
发明人： Atsushi Murakoshi , Ichiro Mizushima , Masaharu Watanabe , Masahiko Yoshiki
IPC分类号： H01L21/02 , H01L21/265 , H01L21/28 , H01L21/3215 , H01L21/70 , H01L29/04 , H01L29/167
CPC分类号： H01L21/26513 , H01L21/32155
摘要： An impurity diffusion layer shallow in diffusion depth and high in activity is formed in a semiconductor device. In the semiconductor device, clusters of icosahedron structure each composed of boron atoms are formed in the silicon crystal of the impurity layer of the semiconductor device so as to function as acceptors. Further, after the clusters of icosahedron structure each composed of 12 boron atoms have been formed by implanting boron ions at high concentration, the device is processed at temperature lower than 700.degree. C. to prevent the boron from being decreased due to combination with silicon. Since an impurity layer shallow in diffusion from the substrate surface and high in activity can be formed and further the clusters of icosahedron structure each composed of 12 boron atoms can be utilized as acceptors, it is possible to realize a high doping even in the manufacturing process for the devices not suitable for high temperature annealing.
摘要翻译：在半导体器件中形成扩散深浅且活性高的杂质扩散层。在半导体装置中，由半导体装置的杂质层的硅晶体形成由硼原子构成的二十面体结构的簇，作为受体。此外，在通过以高浓度注入硼离子形成每个由12个硼原子构成的二十面体结构的簇之后，在低于700℃的温度下处理器件，以防止由于与硅的组合而使硼降低。由于可以形成从衬底表面扩散浅的杂质层和高活性的杂质层，并且由12个硼原子组成的二十面体结构的簇可以用作受体，即使在制造过程中也可以实现高掺杂对于不适合高温退火的器件。

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