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    • 3. 发明授权
    • MOS type semiconductor device
    • MOS型半导体器件
    • US5973359A
    • 1999-10-26
    • US190929
    • 1998-11-12
    • Takashi KobayashiTatsuhiko FujihiraShigeyuki TakeuchiYoshiki KondoShoichi Furuhata
    • Takashi KobayashiTatsuhiko FujihiraShigeyuki TakeuchiYoshiki KondoShoichi Furuhata
    • H01L29/739H01L21/76H01L27/02H01L27/04H01L29/78H01L29/76H01L29/94
    • H01L29/7395H01L27/0251H01L27/0255H01L29/1095H01L29/7808H01L29/7811
    • A MOS type semiconductor device is provided which includes a series Zener diode array for overvoltage protection, which is provided between source regions and an electrode having substantially the same potential as a drain electrode, and a field insulating film on which the series Zener diode array is provided. The thickness T (.mu.m) of the field insulating film is determined as a function of the clamp voltage V.sub.CE (V) of the series Zener diode array, such that the thickness T is held in the range as represented by: T.gtoreq.2.0.times.10.sup.-3 .times.V.sub.CE. The width W.sub.1 (.mu.m) of a portion of a second-conductivity-type isolation well that is close to the field insulating film on which the series Zener diode array is provided, and the width W.sub.2 (.mu.m) of a portion of the second-conductivity-type isolation well that is close to the field insulating film on which the series Zener diode array is not provided, are determined as a function of the clamp voltage V.sub.CE of the series Zener diode array, such that the widths W.sub.1, W.sub.2 are held in respective ranges as represented by: W.sub.1 .gtoreq.0.15 V.sub.CE, and W.sub.2 .gtoreq.0.05 V.sub.CE. By controlling the widths W.sub.1, W.sub.2 to these ranges, respectively, the concentration of current into an end portion of the cell portion of the device can be prevented upon cut-off of current from an inductive load.
    • 提供一种MOS型半导体器件,其包括用于过电压保护的串联齐纳二极管阵列,其设置在源极区域和具有与漏极电极基本相同的电位的电极之间,以及场致绝缘膜,串联齐纳二极管阵列 提供。 确定场绝缘膜的厚度T(μm)作为串联齐纳二极管阵列的钳位电压VCE(V)的函数,使得厚度T保持在如下所示的范围内:T> / = 2.0x10-3xVCE。 第二导电型隔离阱的与串联齐纳二极管阵列的场绝缘膜接近的部分的宽度W1(μm)和宽度W2(μm) 靠近不具有串联齐纳二极管阵列的场绝缘膜的第二导电型隔离阱被确定为串联齐纳二极管阵列的钳位电压VCE的函数,使得宽度W1,W2 保持在各自的范围内,如:W1> / = 0.15VCE,W2> / = 0.05VCE。 通过分别将宽度W1,W2控制到这些范围,可以在从感性负载切断电流时,防止电流进入器件的电池部分端部的电流的浓度。