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1. 发明申请

US20110054184A1 SURFACE TREATMENT AGENT AND SURFACE TREATMENT METHOD 审中-公开
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US20110054184A1
公开(公告)日：2011-03-03
申请号：US12870439
申请日：2010-08-27
申请人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
发明人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
IPC分类号： C07F7/00 , C09K3/00
CPC分类号： C07F7/10 , H01L21/0271 , H01L21/306 , H01L21/3105
摘要： The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.
摘要翻译：本发明的目的是提供一种表面处理剂，其能够有效地防止在基板上设置的无机图案或树脂图案的图案塌陷，以及使用这种表面处理剂的表面处理方法。此外，作为另一个目的，本发明的目的是提供一种能够在基材表面上高度进行甲硅烷基化处理的表面处理剂和使用这种表面处理剂的表面处理方法。用于底物表面处理的表面处理剂含有甲硅烷基化剂和甲硅烷基化杂环化合物。

2. 发明授权

US08623131B2 Surface treatment agent and surface treatment method 有权
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US08623131B2
公开(公告)日：2014-01-07
申请号：US12889905
申请日：2010-09-24
申请人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
发明人： Masaaki Yoshida , Mai Sugawara , Jun Koshiyama
IPC分类号： C09D5/00
CPC分类号： C09D7/20
摘要： Provided are a surface treatment agent that can effectively suppress pattern collapse of an inorganic pattern or resin pattern provided on a substrate, a surface treatment method using such a surface treatment agent, as well as a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. A surface treatment agent is used that is employed in hydrophobization treatment of a substrate surface and includes a silylation agent containing at least one compound having a disilazane structure and a solvent containing a five- or six-membered ring lactone compound.
摘要翻译：提供了能够有效地抑制基板上设置的无机图案或树脂图案的图案塌陷的表面处理剂，使用这样的表面处理剂的表面处理方法以及可以进行甲硅烷基化处理的表面处理剂在基材表面上的高度，以及使用这种表面处理剂的表面处理方法。使用表面处理剂，其用于底物表面的疏水化处理，并且包括含有至少一种具有二硅氮烷结构的化合物和含有五元或六元环内酯化合物的溶剂的甲硅烷基化剂。

3. 发明授权

US08410296B2 Surface treatment agent and surface treatment method 有权
标题翻译：表面处理剂和表面处理方法
公开(公告)号：US08410296B2
公开(公告)日：2013-04-02
申请号：US12943466
申请日：2010-11-10
申请人： Masaaki Yoshida , Mai Sugawara , Naohisa Ueno , Jun Koshiyama
发明人： Masaaki Yoshida , Mai Sugawara , Naohisa Ueno , Jun Koshiyama
IPC分类号： C07F7/10
CPC分类号： C07F7/10 , G03F7/11
摘要： Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.
摘要翻译：即使在基材表面的材料为TiN或SiN的情况下，也可以使用这种表面处理剂的表面处理方法，能够高度疏水化的表面处理剂。本发明的表面处理剂含有环状硅氮烷化合物。作为该环状硅氮烷化合物，可以使用2,2,5,5-四甲基-2,5-二脱氧-1-氮杂环戊烷和2,2,6,6-四甲基-2,6-二脱氧-1- 氮杂环己烷和环状三硅氮烷化合物如2,2,4,4,6,6-六甲基环三硅氮烷和2,4,6-三甲基-2,4,6-三乙烯基环三氮烷是优选的。在表面处理中，将基材表面暴露于根据本发明的表面处理剂，并且将基材表面疏水化。

4. 发明授权

US11007896B2 Storage apparatus, control apparatus, and moving body 有权
公开(公告)号：US11007896B2
公开(公告)日：2021-05-18
申请号：US15568193
申请日：2016-06-15
申请人： Masaaki Yoshida , Hideo Yanagita
发明人： Masaaki Yoshida , Hideo Yanagita
IPC分类号： B60L58/13 , B60L58/21 , H02J7/00 , H01M10/44 , H02J7/14 , B60L3/00 , B60L58/16 , B60L50/16 , H01M4/58 , H01M10/0525 , H01M10/46 , H01M10/48 , B60W20/00 , H01M10/052 , H01M4/02 , B60L11/18
摘要： A storage apparatus stores output property data including groups of residual capacities of a secondary battery and output densities corresponding to the residual capacities. In the output property data, both a difference between a residual capacity of a group that includes an extreme value in the output densities and a residual capacity of a group that includes an output density that immediately precedes the extreme value, and a difference between the residual capacity of the group that includes the extreme value in the output densities and a residual capacity of a group that includes an output density that immediately follows the extreme value are less than a difference between output densities of other groups adjacent to each other.

5. 发明授权

US07982531B2 Reference voltage generating circuit and power supply device using the same 有权
标题翻译：参考电压发生电路及其使用的电源装置
公开(公告)号：US07982531B2
公开(公告)日：2011-07-19
申请号：US11915440
申请日：2007-03-20
申请人： Masaaki Yoshida , Hiroaki Nakanishi
发明人： Masaaki Yoshida , Hiroaki Nakanishi
IPC分类号： G05F3/24 , H01L27/088
CPC分类号： H01L27/0883
摘要： A reference voltage generating circuit for generating a reference voltage includes MOSFETs connected to each other. At least one of the MOSFETs includes a control gate and a floating gate that is made hole-rich or discharged by ultraviolet irradiation, and the reference voltage generating circuit is configured to output the difference between threshold voltages of a pair of the MOSFETs as the reference voltage.
摘要翻译：用于产生参考电压的参考电压产生电路包括彼此连接的MOSFET。 MOSFET中的至少一个包括通过紫外线照射使空穴富集或放电的控制栅极和浮置栅极，并且参考电压产生电路被配置为输出一对MOSFET的阈值电压之间的差作为参考电压。

6. 发明授权

US07924400B2 Method for measuring liquid immersion lithography soluble fraction in organic film 有权
$Method for measuring liquid immersion lithography soluble fraction in organic film$
标题翻译：有机膜中液浸光刻可溶级分的测定方法
公开(公告)号：US07924400B2
公开(公告)日：2011-04-12
申请号：US12067925
申请日：2006-09-25
申请人： Nobuyuki Kohda , Masaaki Yoshida , Takayuki Yajima , Hiromitsu Tsuji
发明人： Nobuyuki Kohda , Masaaki Yoshida , Takayuki Yajima , Hiromitsu Tsuji
IPC分类号： G03B27/52 , G03B27/42
CPC分类号： G01N1/02 , G01N2001/028 , G01N2013/003 , G03F7/2041 , G03F7/70341 , G03F7/70608
摘要： A method for measuring a liquid immersion lithography soluble fraction in an organic film including a mounting step of mounting a droplet of a liquid immersion medium for liquid immersion lithography on a surface of an organic film formed on a substrate; and a transfer step of transferring a component in the organic film into the droplet.
摘要翻译：一种用于测量有机膜中的液浸光刻可溶部分的方法，包括将用于液浸光刻的液浸介质液滴安装在形成在基板上的有机膜的表面上的安装步骤; 以及将有机膜中的成分转移到液滴中的转印步骤。

7. 发明申请

US20100124720A1 MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME 审中-公开
标题翻译：用于保护膜形成的材料，以及使用其形成光电子图案的方法
公开(公告)号：US20100124720A1
公开(公告)日：2010-05-20
申请号：US11995291
申请日：2006-07-05
申请人： Keita Ishiduka , Kotaro Endo , Masaaki Yoshida
发明人： Keita Ishiduka , Kotaro Endo , Masaaki Yoshida
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/70341 , G03F7/70958 , G03F7/70983
摘要： This invention provides a material for protective film formation, comprising at least an alkali soluble polymer comprising at least one of constitutional units represented by general formulae (I) and (II) and an alcoholic solvent. The material for protective film formation can simultaneously prevent a deterioration in a resist film during liquid immersion exposure and a deterioration in a liquid for liquid immersion exposure used and, at the same time, can form a resist pattern with a good shape without the need to increase the number of treatment steps.
摘要翻译：本发明提供一种用于保护膜形成的材料，其至少包含含有由通式（I）和（II）表示的结构单元和醇溶剂中的至少一种的碱溶性聚合物。用于保护膜形成的材料可以同时防止液浸期间的抗蚀剂膜的劣化和用于液浸的液体的劣化，并且同时可以形成具有良好形状的抗蚀剂图案，而不需要增加治疗步骤的数量。

8. 发明申请

US20090272973A1 Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line 失效
标题翻译：半导体晶片包括由切割线划分的半导体芯片和在划线上形成的工艺监视电极焊盘
公开(公告)号：US20090272973A1
公开(公告)日：2009-11-05
申请号：US11794649
申请日：2006-11-22
申请人： Masaaki Yoshida , Satoshi Kouno
发明人： Masaaki Yoshida , Satoshi Kouno
IPC分类号： H01L23/58 , H01L23/544
CPC分类号： H01L22/34 , H01L22/32 , H01L27/0207 , H01L2224/02166 , H01L2224/05554
摘要： The present invention discloses a semiconductor wafer having a scribe line dividing the semiconductor wafer into a matrix of plural semiconductor chips. The semiconductor wafer includes a polysilicon layer, a poly-metal interlayer insulation film formed on the polysilicon layer, and a first metal wiring layer formed on the poly-metal interlayer insulation film. The semiconductor wafer includes a process-monitor electrode pad formed on a dicing area of the scribe line. The process-monitor electrode pad has a width greater than the width of the dicing area. The process-monitor electrode pad includes a contact hole formed in the poly-metal insulation film for connecting the first metal wiring layer to the polysilicon layer.
摘要翻译：本发明公开了一种具有将半导体晶片分割为多个半导体芯片的矩阵的划线的半导体晶片。半导体晶片包括形成在多晶硅层上的多晶硅层，多金属层间绝缘膜和形成在多金属层间绝缘膜上的第一金属布线层。半导体晶片包括形成在划线的切割区域上的处理监测电极焊盘。处理监视器电极焊盘的宽度大于切割区域的宽度。处理监视电极焊盘包括形成在多金属绝缘膜中的接触孔，用于将第一金属布线层连接到多晶硅层。

9. 发明授权

US07592122B2 Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition 有权
标题翻译：光致抗蚀剂组合物和用于光致抗蚀剂组合物的低分子化合物和高分子化合物
公开(公告)号：US07592122B2
公开(公告)日：2009-09-22
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08C19/28
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译：具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

10. 发明授权

US07579645B2 Semiconductor device having non-volatile memory cell 失效
标题翻译：具有非易失性存储单元的半导体器件
公开(公告)号：US07579645B2
公开(公告)日：2009-08-25
申请号：US10588479
申请日：2005-12-19
申请人： Masaaki Yoshida
发明人： Masaaki Yoshida
IPC分类号： H01L29/788
CPC分类号： G11C16/30 , G11C16/0433 , H01L21/823462 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is disclosed that includes a nonvolatile memory cell having a memory transistor and a selection transistor, and a peripheral circuit transistor. The memory transistor includes a memory gate oxide film that is arranged on a semiconductor substrate, and a floating gate made of polysilicon that is arranged on the memory gate oxide film. The selection transistor is serially connected to the memory transistor and includes a selection gate oxide film that is arranged on the semiconductor substrate, and a selection gate made of polysilicon that is arranged on the selection gate oxide film. The peripheral circuit transistor includes a peripheral circuit gate oxide film that is arranged on the semiconductor substrate, and a peripheral circuit gate made of polysilicon that is arranged on the peripheral circuit gate oxide film. The memory gate oxide film is arranged to be thinner than the peripheral circuit gate oxide film.
摘要翻译：公开了一种半导体器件，其包括具有存储晶体管和选择晶体管的非易失性存储单元和外围电路晶体管。存储晶体管包括布置在半导体衬底上的存储栅极氧化膜和布置在存储栅极氧化膜上的由多晶硅制成的浮置栅极。选择晶体管串联连接到存储晶体管，并且包括布置在半导体衬底上的选择栅极氧化膜以及布置在选择栅氧化膜上的由多晶硅制成的选择栅极。外围电路晶体管包括布置在半导体衬底上的外围电路栅极氧化膜，以及设置在外围电路栅氧化膜上的由多晶硅制成的外围电路栅极。存储栅氧化膜被布置成比外围电路栅极氧化膜薄。

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