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1. 发明授权

US4524369A Plastic information-recording medium 失效
标题翻译：塑料信息记录介质
公开(公告)号：US4524369A
公开(公告)日：1985-06-18
申请号：US391374
申请日：1982-06-23
申请人： Masaaki Sato , Aizo Kaneda , Makio Watanabe
发明人： Masaaki Sato , Aizo Kaneda , Makio Watanabe
IPC分类号： B41M5/26 , G11B7/24 , G11B7/243 , G11B7/253 , G11B7/26 , G01D15/34
CPC分类号： G11B7/26 , G11B7/2533 , G11B7/2433 , G11B7/2536
摘要： A plastic information-recording medium comprises a pair of juxtaposed transparent plastic substrates molded from a composition, which is comprised of a copolymer consisting of 5 to 25% by weight of acrylonitrile or methacrylonitrile and 95 to 75% by weight of at least one of other monomers copolymerizable with acrylonitrile or methacrylonitrile than styrene or a styrene derivative, or a composition comprising at least 70% by weight of the copolymer and at most 30% by weight of butadiene rubber, and has a clearance between the substrates, the clearance being gas-tightly blocked from an outside atmosphere by joining the substrates together at peripheral edges thereof, and a recording film being provided on each of clearance-facing sides of the substrates.
摘要翻译：塑料信息记录介质包括由组合物模制的一对并置的透明塑料基材，该组合物由共聚物组成，该共聚物由5至25重量％的丙烯腈或甲基丙烯腈和95至75重量％的其它至少一种可与苯乙烯或苯乙烯衍生物共聚的单体与丙烯腈或甲基丙烯腈共聚的单体，或包含共聚物的至少70重量％和至多30重量％的丁二烯橡胶的组合物，并且在基材之间具有间隙，通过在其周边边缘处将基板接合在一起而与外部气氛紧密地阻挡，并且在基板的面向两侧的每个上设置有记录膜。

2. 发明授权

US06531760B1 Semiconductor device 失效
公开(公告)号：US06531760B1
公开(公告)日：2003-03-11
申请号：US09558105
申请日：2000-04-25
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L23495
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0695 , H01L2224/85399
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

3. 发明授权

US06265782B1 Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film 有权
标题翻译：半导体器件，半导体芯片安装基板，制造器件和基板的方法，粘合剂和粘合剂双重涂膜
公开(公告)号：US06265782B1
公开(公告)日：2001-07-24
申请号：US09284131
申请日：1999-08-30
申请人： Kazunori Yamamoto , Yasushi Shimada , Yasushi Kumashiro , Teiichi Inada , Hiroyuki Kuriya , Aizo Kaneda , Takeo Tomiyama , Yoshihiro Nomura , Yoichi Hosokawa , Hiroshi Kirihara , Akira Kageyama
发明人： Kazunori Yamamoto , Yasushi Shimada , Yasushi Kumashiro , Teiichi Inada , Hiroyuki Kuriya , Aizo Kaneda , Takeo Tomiyama , Yoshihiro Nomura , Yoichi Hosokawa , Hiroshi Kirihara , Akira Kageyama
IPC分类号： H01L2348
CPC分类号： H01L23/49827 , C09J163/00 , H01L23/13 , H01L23/3128 , H01L23/49816 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/50 , H01L24/73 , H01L24/83 , H01L2224/2919 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83856 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/15159 , H01L2924/15184 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , Y10T428/28 , Y10T428/2848 , Y10T428/2852 , Y10T428/287 , Y10T428/31511 , Y10T428/31515 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.
摘要翻译：本发明旨在提高半导体器件中的封装后的耐温循环性，并且提高吸湿回流焊性，并提供在25℃下的储能弹性模量为10〜2000MPa的粘合剂和使用动态粘弹性光谱仪测量的260℃下的储存弹性模量为3至50MPa，以及使用粘合剂的双面粘合膜，半导体器件和半导体芯片安装基板，以及它们的生产处理。

4. 发明授权

US6072231A Semiconductor device 失效
公开(公告)号：US6072231A
公开(公告)日：2000-06-06
申请号：US066877
申请日：1998-04-28
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

5. 发明授权

US5914530A Semiconductor device 失效
公开(公告)号：US5914530A
公开(公告)日：1999-06-22
申请号：US52981
申请日：1998-04-01
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

6. 发明授权

US5612569A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5612569A
公开(公告)日：1997-03-18
申请号：US464131
申请日：1995-06-05
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L23/31 , H01L23/495 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/32 , H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/05 , H01L24/06 , H01L25/105 , H01L29/0657 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/06136 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/73215 , H01L2224/85205 , H01L2224/8592 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , Y10T29/49121
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要翻译：由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

7. 发明授权

US5514905A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5514905A
公开(公告)日：1996-05-07
申请号：US329824
申请日：1994-10-27
申请人： Toshiyuki Sakuta , Kazuyuki Miyazawa , Satoshi Oguchi , Aizo Kaneda , Masao Mitani , Shozo Nakamura , Kunihiko Nishi , Gen Murakami
发明人： Toshiyuki Sakuta , Kazuyuki Miyazawa , Satoshi Oguchi , Aizo Kaneda , Masao Mitani , Shozo Nakamura , Kunihiko Nishi , Gen Murakami
IPC分类号： H01L23/29 , H01L23/495 , H01L23/48 , H01L29/41
CPC分类号： H01L23/4951 , H01L23/293 , H01L2224/05599 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48599 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/14
摘要： A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.
摘要翻译：半导体器件与半导体芯片相连，该半导体芯片在与其前表面或第一主表面的中心位置相对应的部分处具有多个接合焊盘;半导体芯片，覆盖在半导体芯片上并具有开口与接合焊盘相对应，多个有机绝缘膜上的引线以及密封或封装这些成分的成型树脂。

8. 发明授权

US5334875A Stacked semiconductor memory device and semiconductor memory module containing the same 失效
标题翻译：堆叠的半导体存储器件和包含其的半导体存储器模块
公开(公告)号：US5334875A
公开(公告)日：1994-08-02
申请号：US1649
申请日：1993-03-02
申请人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
发明人： Toshio Sugano , Kohji Nagaoka , Seiichiro Tsukui , Yoshiaki Wakashima , Michio Tanimoto , Masayuki Watanabe , Suguru Sakaguchi , Kunihiko Nishi , Aizo Kaneda , Kohji Serizawa , Michiharu Honda , Tohru Yoshida , Takeshi Komaru , Atsushi Nakamura
IPC分类号： G11C5/00 , H01L23/498 , H01L25/065 , H05K1/14 , H05K1/18 , H05K3/34 , H05K3/36 , H01L23/16
CPC分类号： G11C5/02 , G11C5/00 , G11C5/06 , H01L23/49805 , H01L25/0657 , H01L2224/16 , H01L2225/0651 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06579 , H01L2225/06596 , H01L2924/07811 , H01L2924/09701 , H05K1/144 , H05K1/182 , H05K3/3421 , H05K3/363
摘要： There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and a large capacity while minimizing the mounting area. In order to achieve this memory, the TAB (Tape Automated Bonding) of the prior art is mounted on an electrically conductive connector, and a plurality of structures composed of the TAB and the connector are stacked. Moreover, the connector mounting the TAB thereon is constructed such that the independent terminals of the stacked TABs may not be shorted.
摘要翻译：存在增加需要大容量存储器的器件的面积的趋势，其由半导体存储器占据。这种趋势阻碍了设备尺寸的减小。本发明旨在提供一种能够在最小化安装面积的同时具有高集成度，高密度和大容量的存储器。为了实现这种记忆，现有技术的TAB（磁带自动接合）被安装在导电连接器上，并且由TAB和连接器组成的多个结构被堆叠。此外，将TAB安装在其上的连接器构造成使得堆叠的TAB的独立端子可能不会短路。

9. 发明授权

US4900501A Method and apparatus for encapsulating semi-conductors 失效
标题翻译：用于封装半导体的方法和装置
公开(公告)号：US4900501A
公开(公告)日：1990-02-13
申请号：US924773
申请日：1986-10-30
申请人： Junichi Saeki , Aizo Kaneda , Masakazu Ozawa , Takashi Nakagawa , Kunihiko Nishi
发明人： Junichi Saeki , Aizo Kaneda , Masakazu Ozawa , Takashi Nakagawa , Kunihiko Nishi
IPC分类号： B29C45/02 , B29C45/14 , B29C45/26 , B29L31/34 , H01L21/56
CPC分类号： H01L21/565 , B29C45/14655 , H01L24/97 , B29C2045/2712 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/181
摘要： A resin-molded semiconductor is produced by using an apparatus which comprises a mold having a plurailty of pots from which a molding resin is fed under pressure, mutually independent runners extending from each pot, and a plurality of cavities serially disposed at the end of each runner, said cavities being filled with a molding resin fed under pressure from said pots, with a part to be molded placed in each cavity. The process and apparatus of this invention prevent the molding defects resulting from the excessive flow resistance of resin and greatly improves the use efficiency of resin.
摘要翻译：通过使用包括具有多个罐的模具的模具来制造树脂模制的半导体，所述模具具有在压力下从其中供给模制树脂的模具，从每个罐延伸的相互独立的浇道，以及串联地设置在每个端部的多个空腔所述空腔中填充有从所述罐加压的模制树脂，其中待模制的部件放置在每个空腔中。本发明的方法和装置防止由树脂的过大流动阻力引起的模制缺陷，并大大提高了树脂的使用效率。

10. 发明授权

US06621170B2 Semiconductor device, substrate for mounting semiconductor chip, processes for their production, adhesive, and double-sided adhesive film 有权
标题翻译：半导体器件，用于安装半导体芯片的基板，其制造方法，粘合剂和双面粘合剂膜
公开(公告)号：US06621170B2
公开(公告)日：2003-09-16
申请号：US09842441
申请日：2001-04-26
申请人： Kazunori Yamamoto , Yasushi Shimada , Yasushi Kumashiro , Teiichi Inada , Hiroyuki Kuriya , Aizo Kaneda , Takeo Tomiyama , Yoshihiro Nomura , Yoichi Hosokawa , Hiroshi Kirihara , Akira Kageyama
发明人： Kazunori Yamamoto , Yasushi Shimada , Yasushi Kumashiro , Teiichi Inada , Hiroyuki Kuriya , Aizo Kaneda , Takeo Tomiyama , Yoshihiro Nomura , Yoichi Hosokawa , Hiroshi Kirihara , Akira Kageyama
IPC分类号： H01L2348
CPC分类号： H01L23/49827 , C09J163/00 , H01L23/13 , H01L23/3128 , H01L23/49816 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/50 , H01L24/73 , H01L24/83 , H01L2224/2919 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83856 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/12041 , H01L2924/12044 , H01L2924/15159 , H01L2924/15184 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , Y10T428/28 , Y10T428/2848 , Y10T428/2852 , Y10T428/287 , Y10T428/31511 , Y10T428/31515 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： The present invention aims at an improvement in temperature-cycle resistance after packaging in semiconductor devices and also an improvement in moisture-absorbed reflow resistance, and provides an adhesive having a storage elastic modulus at 25° C. of from 10 to 2,000 MPa and a storage elastic modulus at 260° C. of from 3 to 50 MPa as measured with a dynamic viscoelastic spectrometer, and also a double-sided adhesive film, a semiconductor device and a semiconductor chip mounting substrate which make use of the adhesive, and their production process.
摘要翻译：本发明旨在提高半导体器件中的封装后的耐温循环性，并且提高吸湿回流焊性，并提供在25℃下的储能弹性模量为10〜2000MPa的粘合剂和使用动态粘弹性光谱仪测量的260℃下的储存弹性模量为3至50MPa，以及使用粘合剂的双面粘合膜，半导体器件和半导体芯片安装基板，以及它们的生产处理。

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