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1. 发明授权

US09297393B2 Actuator 有权
标题翻译：执行器
公开(公告)号：US09297393B2
公开(公告)日：2016-03-29
申请号：US13029559
申请日：2011-02-17
申请人： Tetsuro Matsumoto
发明人： Tetsuro Matsumoto
IPC分类号： F01B3/00 , F15B15/18 , B60T13/74 , F15B15/10
CPC分类号： F15B15/18 , B60T13/745 , F15B15/103
摘要： An actuator is equipped with a moveable part 160 that moves according to changes in an intake amount of air, a cylinder 140 that contains air and pumps the air through a fluid pipe 150 to the moveable part 160 according to pressure applied to the air, and a piston 130 that applies pressure to the air in the cylinder 140. Further, the actuator is equipped with a motor 100 that generates rotational force, and a screw 110 and a slide nut 120 that convert the rotational force to a force to move the piston 130. The air is enclosed in the moveable part 160, the cylinder 140 and the fluid pipe 150.
摘要翻译：致动器配备有根据空气进入量的变化而移动的可移动部分160，包含空气的气缸140，并且根据施加到空气的压力通过流体管150将空气泵送到可移动部分160;以及活塞130，其向气缸140中的空气施加压力。此外，致动器配备有产生旋转力的电动机100，以及螺杆110和滑动螺母120，其将旋转力转换成将活塞移动的力空气被封闭在可移动部分160，气缸140和流体管道150中。

2. 发明授权

US08952594B2 Actuator 有权
标题翻译：执行器
公开(公告)号：US08952594B2
公开(公告)日：2015-02-10
申请号：US13084042
申请日：2011-04-11
申请人： Tetsuro Matsumoto
发明人： Tetsuro Matsumoto
IPC分类号： H02N11/00 , H01L41/107 , F03G7/00
CPC分类号： F03G7/005
摘要： An actuator includes an electrolyte membrane, first and second driving electrodes that are disposed on the opposite surfaces and that give a potential difference to the electrolyte membrane, a sensor that is formed on the electrolyte membrane and that detects a force acting on the electrolyte membrane, and a driving control circuit that supplies a drive voltage to the first and second driving electrodes on the basis of an instruction signal and a detection output of the sensor. The driving control circuit applies a PWM drive voltage with a duty ratio corresponding to a difference between the instruction signal and the detection output of the sensor across the first driving electrode and the second driving electrode.
摘要翻译：致动器包括电解质膜，第一和第二驱动电极，其布置在相对的表面上并且给予电解质膜的电位差;形成在电解质膜上并且检测作用在电解质膜上的力的传感器; 以及驱动控制电路，其基于所述传感器的指示信号和检测输出，向所述第一驱动电极和所述第二驱动电极提供驱动电压。驱动控制电路施加PWM驱动电压，其占空比对应于指示信号和传感器的检测输出之间的差异跨越第一驱动电极和第二驱动电极。

3. 发明申请

US20120319934A1 ELECTRO-OPTICAL DEVICE, METHOD OF DRIVING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
标题翻译：电光装置，其驱动方法和电子装置
公开(公告)号：US20120319934A1
公开(公告)日：2012-12-20
申请号：US13595842
申请日：2012-08-27
申请人： Tomoyuki OKUYAMA , Tetsuro MATSUMOTO
发明人： Tomoyuki OKUYAMA , Tetsuro MATSUMOTO
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G02F1/1362 , G02F2203/30 , G02F2203/60 , G09G3/2014 , G09G3/2025 , G09G2320/041
摘要： An electro-optical device includes a pixel that has an electro-optical element with a light transmittance that changes to a predetermined value in response to an applied voltage, which changes in response to the temperature. A light source irradiates light to the pixel. A driving unit includes a predetermined number of sub-fields having the same length in one frame. The driving unit provides either an on-voltage indicating light-on or an off-voltage indicating light-off to the pixel in each of the predetermined number of the sub-fields in response to the grayscale to be displayed. A temperature measuring unit measures the temperature and outputs a temperature signal. A time controlling unit controls the length of one sub-field on the basis of the temperature signal. A light intensity controlling unit controls the intensity of the light incident on the pixel on the basis of the temperature signal.
摘要翻译：电光装置包括具有响应于随温度而变化的施加电压而具有变化到预定值的光透射率的电光元件的像素。光源将光照射到像素。驱动单元包括在一帧中具有相同长度的预定数量的子场。驱动单元响应于要显示的灰度，向预定数量的子场中的每一个中的像素提供指示点亮或断开电压的指示点亮的导通电压。温度测量单元测量温度并输出温度信号。时间控制单元基于温度信号来控制一个子场的长度。光强度控制单元基于温度信号来控制入射在像素上的光的强度。

4. 发明授权

US08274462B2 Electro-optical device, method of driving the same, and electronic apparatus 有权
标题翻译：电光装置及其驱动方法以及电子装置
公开(公告)号：US08274462B2
公开(公告)日：2012-09-25
申请号：US12542033
申请日：2009-08-17
申请人： Tomoyuki Okuyama , Tetsuro Matsumoto
发明人： Tomoyuki Okuyama , Tetsuro Matsumoto
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G02F1/1362 , G02F2203/30 , G02F2203/60 , G09G3/2014 , G09G3/2025 , G09G2320/041
摘要： An electro-optical device includes a pixel that has an electro-optical element with a light transmittance that changes to a predetermined value in response to an applied voltage, which changes in response to the temperature. A light source irradiates light to the pixel. A driving unit includes a predetermined number of sub-fields having the same length in one frame. The driving unit provides either an on-voltage indicating light-on or an off-voltage indicating light-off to the pixel in each of the predetermined number of the sub-fields in response to the grayscale to be displayed. A temperature measuring unit measures the temperature and outputs a temperature signal. A time controlling unit controls the length of one sub-field on the basis of the temperature signal. A light intensity controlling unit controls the intensity of the light incident on the pixel on the basis of the temperature signal.
摘要翻译：电光装置包括具有响应于随温度而变化的施加电压而具有变化到预定值的光透射率的电光元件的像素。光源将光照射到像素。驱动单元包括在一帧中具有相同长度的预定数量的子场。驱动单元响应于要显示的灰度，向预定数量的子场中的每一个中的像素提供指示点亮或断开电压的指示点亮的导通电压。温度测量单元测量温度并输出温度信号。时间控制单元基于温度信号来控制一个子场的长度。光强度控制单元基于温度信号来控制入射在像素上的光的强度。

5. 发明申请

US20100289731A1 ELECTRO-OPTICAL DEVICE, DRIVING METHOD THEREFOR, AND ELECTRONIC APPARATUS 有权
标题翻译：电光器件，其驱动方法和电子设备
公开(公告)号：US20100289731A1
公开(公告)日：2010-11-18
申请号：US12777735
申请日：2010-05-11
申请人： Tetsuro MATSUMOTO
发明人： Tetsuro MATSUMOTO
IPC分类号： G09G3/36
CPC分类号： G09G3/2025 , G09G3/3648 , G09G2320/041
摘要： An electro-optical device includes a temperature detecting unit that detects temperature, wherein the electro-optical device sets a number of sub-frames of plural sub-frames included in one frame according to the temperature detected by the temperature detecting unit and sets a luminance level of pixels in each of the plural sub-frames to at least a first level or a second level to perform gradation display.
摘要翻译：电光装置包括温度检测单元，其检测温度，其中，所述电光装置根据由所述温度检测单元检测到的温度设定包括在一帧中的多个子帧的子帧数，并设定亮度将多个子帧中的每一个的像素级别设置为至少第一级或第二级，以执行灰度显示。

6. 发明授权

US06919622B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06919622B2
公开(公告)日：2005-07-19
申请号：US10774405
申请日：2004-02-10
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0695 , H01L2224/85399
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要翻译：由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

7. 发明授权

US06326681B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06326681B1
公开(公告)日：2001-12-04
申请号：US09482648
申请日：2000-01-13
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L23495
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0695 , H01L2224/85399
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要翻译：由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

8. 再颁专利

USRE36232E Apparatus for molding fibrous material 失效
标题翻译：纤维材料成型装置
公开(公告)号：USRE36232E
公开(公告)日：1999-06-22
申请号：US960354
申请日：1997-10-29
申请人： Mitsuo Terada , Tetsuro Matsumoto , Kiyofumi Hashimoto
发明人： Mitsuo Terada , Tetsuro Matsumoto , Kiyofumi Hashimoto
IPC分类号： B30B11/24 , C05F9/00 , C05F11/00 , B29C47/00
CPC分类号： C05F9/00 , B29C47/0066 , B29C47/385 , B29C47/6012 , B29C47/6025 , B29C47/6093 , B30B11/24 , C05F11/00 , Y02W30/43
摘要： Disclosed is an apparatus for molding a fibrous material .�.mainly containing waste paper.!., in which a fibrous material .�.mainly containing waste paper.!. is thrown into a cylindrical cylinder from a raw material throwing port, being fed to the leading edge of the cylindrical casing by the feeding action of a rotary screw provided in the cylindrical casing, and discharged from the leading edge, the apparatus comprising: a molding/discharging member provided at the leading edge of the cylindrical casing for compressing the fibrous material fed to the leading edge of the casing into a specified shape and discharging the compressed fibrous material.
摘要翻译：公开了一种用于模制主要包含废纸的纤维材料的设备，其中主要包含废纸的纤维材料从原材料投入口被投入到圆柱形圆柱体中，被馈送到圆柱形壳体的前缘通过设置在圆筒形壳体中的旋转螺杆的进给动作，并从前缘排出，该装置包括：成型/排出构件，设置在圆柱形壳体的前缘处，用于压缩供给至前缘的前端的纤维材料套管形成指定的形状并排出压缩的纤维材料。

9. 发明授权

US5863817A Semiconductor device 失效
公开(公告)号：US5863817A
公开(公告)日：1999-01-26
申请号：US46542
申请日：1998-03-24
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34 , H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

10. 发明授权

US5436484A Semiconductor integrated circuit device having input protective elements and internal circuits 失效
标题翻译：具有输入保护元件和内部电路的半导体集成电路器件
公开(公告)号：US5436484A
公开(公告)日：1995-07-25
申请号：US143151
申请日：1993-10-29
申请人： Hidetoshi Iwai , Kazumichi Mitsusada , Masamichi Ishihara , Tetsuro Matsumoto , Kazuyuki Miyazawa , Hisao Katto , Kousuke Okuyama
发明人： Hidetoshi Iwai , Kazumichi Mitsusada , Masamichi Ishihara , Tetsuro Matsumoto , Kazuyuki Miyazawa , Hisao Katto , Kousuke Okuyama
IPC分类号： H01L21/8238 , H01L21/8242 , H01L27/02 , H01L27/092 , H01L29/78 , H01L29/06
CPC分类号： H01L21/823864 , H01L27/0251 , H01L27/0266 , H01L27/0922 , H01L27/10873 , H01L29/78
摘要： Disclosed is a semiconductor device having an internal circuit protected by an electrostatic protective circuit, the internal circuit and electrostatic protective circuit being formed on the same semiconductor substrate. The internal circuit includes MIS elements and has a double-diffused drain structure, while the protective circuit has a single-diffused drain structure. The internal circuit can be, e.g., a DRAM, and the protective circuit can have diffused resistors and clamping MIS elements. The single-diffused drain structure can be formed in the protective circuit on the semiconductor substrate, while providing double-diffused drain structure in the internal circuit on the same substrate, by: (1) scanning the ion implanting apparatus to avoid ion implantation of the first ions into the region of the protective circuit, and/or (2) forming a photoresist film over the region of the protective circuit to prevent ion implanation of the first ions into the protective circuit region. As a further embodiment of the present invention, a semiconductor integrated circuit device is provided wherein the source and drain regions of an MOSFET in the internal circuit have lightly doped drain (LDD) structure in order to suppress the appearance of hot carriers, and the source and drain regions of an MOSFET in the input/output circuit have structure doped with phosphorus at a high impurity concentration, in order to enhance an electrostatic breakdown voltage.
摘要翻译：公开了具有被静电保护电路保护的内部电路的半导体器件，内部电路和静电保护电路形成在同一半导体衬底上。内部电路包括MIS元件，并具有双扩散漏极结构，而保护电路具有单扩散漏极结构。内部电路可以是例如DRAM，并且保护电路可以具有扩散电阻器和钳位MIS元件。单扩散漏极结构可以形成在半导体衬底上的保护电路中，同时通过以下步骤在同一衬底上的内部电路中提供双扩散漏极结构：（1）扫描离子注入装置以避免离子注入第一离子进入保护电路的区域，和/或（2）在保护电路的区域上形成光致抗蚀剂膜，以防止第一离子离子注入保护电路区域。作为本发明的另一实施例，提供了一种半导体集成电路器件，其中内部电路中的MOSFET的源极和漏极区域具有轻掺杂漏极（LDD）结构，以便抑制热载流子的出现，源极并且输入/输出电路中的MOSFET的漏极区域掺杂有高杂质浓度的磷的结构，以增强静电击穿电压。

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