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    • 9. 发明授权
    • Removing reflective layers from EUV mirrors
    • 从EUV镜子中去除反射层
    • US07919004B2
    • 2011-04-05
    • US12534659
    • 2009-08-03
    • Martin WeiserOlaf BorkUlrich Andiel
    • Martin WeiserOlaf BorkUlrich Andiel
    • B29D11/00
    • G02B5/0825C23F4/00G02B5/0891G03F1/24G03F1/72
    • A method for removing at least one reflective layer (4a, 4b) from an optical element (1) for EUV lithography, wherein the optical element (1) has a substrate (2) and an interlayer (6) between the substrate (2) and the at least one reflective layer (4a, 4b). The method includes etching away the at least one reflective layer (4a, 4b) as far as the interlayer (6) with an etching gas (7), wherein the material of the interlayer (6) does not react with the etching gas (7), and wherein, after the etching away, the interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms. Also, an optical element (1) for reflecting radiation in the EUV wavelength range includes a substrate (2), at least one reflective layer (4a, 4b), and an interlayer (6) arranged between the substrate (2) and the at least one reflective layer (4a, 4b). The interlayer (6) is composed at least partly of a material which does not react with a halogen or a halogen compound as etching gas (7) and which is selected, in particular, from one or more of the following: alkali metal halides, alkaline earth metal halides and aluminum oxide (Al2O3). The interlayer (6) has a surface roughness of less than 0.5 nm rms, preferably of less than 0.2 nm rms, and more preferably of less than 0.1 nm rms.
    • 一种用于从用于EUV光刻的光学元件(1)去除至少一个反射层(4a,4b)的方法,其中所述光学元件(1)在所述基板(2)之间具有基板(2)和中间层(6) 和所述至少一个反射层(4a,4b)。 该方法包括使用蚀刻气体(7)将至少一个反射层(4a,4b)蚀刻掉至中间层(6),其中中间层(6)的材料不与蚀刻气体(7)反应 ),并且其中在蚀刻之后,中间层(6)具有小于0.5nm rms,优选小于0.2nm rms,更优选小于0.1nm rms的表面粗糙度。 此外,用于反射EUV波长范围的辐射的光学元件(1)包括基板(2),至少一个反射层(4a,4b)和布置在基板(2)和基板 至少一个反射层(4a,4b)。 中间层(6)至少部分由不与卤素或卤素化合物作为蚀刻气体(7)反应的材料组成,特别是选自以下的一种或多种:碱金属卤化物, 碱土金属卤化物和氧化铝(Al2O3)。 中间层(6)具有小于0.5nm rms,优选小于0.2nm rms,更优选小于0.1nm rms的表面粗糙度。