专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08013364B2 Semiconductor devices and structures thereof 有权
标题翻译：半导体器件及其结构
公开(公告)号：US08013364B2
公开(公告)日：2011-09-06
申请号：US12579807
申请日：2009-10-15
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L23/52
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

2. 发明授权

US07629225B2 Methods of manufacturing semiconductor devices and structures thereof 有权
标题翻译：制造半导体器件的方法及其结构
公开(公告)号：US07629225B2
公开(公告)日：2009-12-08
申请号：US11151134
申请日：2005-06-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/76
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了在集成电路的互连和其结构之间形成气隙的方法。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

3. 发明授权

US09401322B2 Semiconductor devices and structures thereof 有权
标题翻译：半导体器件及其结构
公开(公告)号：US09401322B2
公开(公告)日：2016-07-26
申请号：US13190310
申请日：2011-07-25
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L29/40 , H01L23/522 , H01L21/768
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

4. 发明申请

US20100032841A1 Semiconductor Devices and Structures Thereof 有权
标题翻译：半导体器件及其结构
公开(公告)号：US20100032841A1
公开(公告)日：2010-02-11
申请号：US12579807
申请日：2009-10-15
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L23/522
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

5. 发明申请

US20060281295A1 Methods of manufacturing semiconductor devices and structures thereof 有权
公开(公告)号：US20060281295A1
公开(公告)日：2006-12-14
申请号：US11151134
申请日：2005-06-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/4763
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

6. 发明授权

US08148235B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08148235B2
公开(公告)日：2012-04-03
申请号：US12618567
申请日：2009-11-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/76
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了在集成电路的互连和其结构之间形成气隙的方法。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

7. 发明申请

US20100144112A1 Methods of Manufacturing Semiconductor Devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100144112A1
公开(公告)日：2010-06-10
申请号：US12618567
申请日：2009-11-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/764 , H01L21/762
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了在集成电路的互连和其结构之间形成气隙的方法。第一绝缘材料沉积在工件上方，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

8. 发明申请

US20110278730A1 Semiconductor Devices and Structures Thereof 审中-公开
标题翻译：半导体器件及其结构
公开(公告)号：US20110278730A1
公开(公告)日：2011-11-17
申请号：US13190310
申请日：2011-07-25
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann
IPC分类号： H01L23/48 , B82Y99/00
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

9. 发明授权

US06602123B1 Finishing pad design for multidirectional use 失效
标题翻译：整理垫设计用于多方向使用
公开(公告)号：US06602123B1
公开(公告)日：2003-08-05
申请号：US10243879
申请日：2002-09-13
申请人： Markus Naujok
发明人： Markus Naujok
IPC分类号： B24D1100
CPC分类号： B24B37/24
摘要： A polishing pad (for example, polishing pad 305) for use in polarization of a semiconductor wafer (for example, semiconductor wafer 420), the polishing pad 305 featuring a plurality of different polishing surfaces, depending upon the direction of the movement of the polishing pad 305. The polishing pad 305 may take the form of a polishing disc or a polishing belt. The polarization of the semiconductor wafer 420 can then take place at a fewer number of polishing stations, thereby reducing the amount of time needed and reducing the probability of damage to the semiconductor wafer 420.
摘要翻译：用于半导体晶片（例如，半导体晶片420）的偏振的抛光垫（例如，抛光垫305），具有多个不同抛光表面的抛光垫305，其取决于抛光的移动方向抛光垫305可以采取抛光盘或抛光带的形式。然后半导体晶片420的极化可以在较少数量的抛光站进行，从而减少所需的时间量并降低对半导体晶片420的损坏概率。

10. 发明授权

US07282451B2 Methods of forming integrated circuit devices having metal interconnect layers therein 有权
公开(公告)号：US07282451B2
公开(公告)日：2007-10-16
申请号：US11216686
申请日：2005-08-31
申请人： Duk Ho Hong , Kyoung Woo Lee , Markus Naujok , Roman Knoefler
发明人： Duk Ho Hong , Kyoung Woo Lee , Markus Naujok , Roman Knoefler
IPC分类号： H01L21/302
CPC分类号： C25D5/022 , H01L21/31144 , H01L21/76802 , H01L21/76877 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming metal interconnect layers include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming a recess in the electrically insulating layer, at a location adjacent the contact hole. The contact hole and the recess are then filled with a first electrically conductive material (e.g., tungsten (W)). At least a portion of the first electrically conductive material within the contact hole is then exposed. This exposure occurs by etching back a portion of the electrically insulating layer using the first electrically conductive material within the contact hole and within the recess as an etching mask. The first electrically conductive material within the recess is then removed to expose another portion of the electrically insulating layer. Following this, the exposed portion of the first electrically conductive material is covered with a second electrically conductive material (e.g., copper (Cu)), which directly contacts the exposed portion of the first electrically conductive material. This covering step results in the definition of a wiring pattern including the first and second electrically conductive materials.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式