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1. 发明授权

US08013364B2 Semiconductor devices and structures thereof 有权
标题翻译：半导体器件及其结构
公开(公告)号：US08013364B2
公开(公告)日：2011-09-06
申请号：US12579807
申请日：2009-10-15
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L23/52
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

2. 发明授权

US07629225B2 Methods of manufacturing semiconductor devices and structures thereof 有权
标题翻译：制造半导体器件的方法及其结构
公开(公告)号：US07629225B2
公开(公告)日：2009-12-08
申请号：US11151134
申请日：2005-06-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/76
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了在集成电路的互连和其结构之间形成气隙的方法。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

3. 发明授权

US09401322B2 Semiconductor devices and structures thereof 有权
标题翻译：半导体器件及其结构
公开(公告)号：US09401322B2
公开(公告)日：2016-07-26
申请号：US13190310
申请日：2011-07-25
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L29/40 , H01L23/522 , H01L21/768
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

4. 发明申请

US20110278730A1 Semiconductor Devices and Structures Thereof 审中-公开
标题翻译：半导体器件及其结构
公开(公告)号：US20110278730A1
公开(公告)日：2011-11-17
申请号：US13190310
申请日：2011-07-25
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann
IPC分类号： H01L23/48 , B82Y99/00
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

5. 发明申请

US20100032841A1 Semiconductor Devices and Structures Thereof 有权
标题翻译：半导体器件及其结构
公开(公告)号：US20100032841A1
公开(公告)日：2010-02-11
申请号：US12579807
申请日：2009-10-15
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L23/522
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了一种在互连之间具有气隙的结构。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

6. 发明申请

US20060281295A1 Methods of manufacturing semiconductor devices and structures thereof 有权
公开(公告)号：US20060281295A1
公开(公告)日：2006-12-14
申请号：US11151134
申请日：2005-06-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/4763
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

7. 发明授权

US08148235B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08148235B2
公开(公告)日：2012-04-03
申请号：US12618567
申请日：2009-11-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/76
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了在集成电路的互连和其结构之间形成气隙的方法。第一绝缘材料沉积在工件上，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

8. 发明申请

US20100144112A1 Methods of Manufacturing Semiconductor Devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100144112A1
公开(公告)日：2010-06-10
申请号：US12618567
申请日：2009-11-13
申请人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
发明人： Markus Naujok , Hermann Wendt , Alois Gutmann , Muhammed Shafi Pallachalil
IPC分类号： H01L21/764 , H01L21/762
CPC分类号： H01L23/5222 , H01L21/7682 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
摘要翻译：公开了在集成电路的互连和其结构之间形成气隙的方法。第一绝缘材料沉积在工件上方，并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。导电线形成在第一和第二绝缘层中。处理第二绝缘材料以去除牺牲部分，并且去除第一绝缘材料的至少一部分，在导线之间形成气隙。第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。工件的第一区域可以在处理期间被掩蔽，使得第二绝缘材料在工件的第二区域变得可渗透，但在第一区域中仍然不可渗透，从而允许在第二区域中形成气隙，但是不是第一个地区。

9. 发明授权

US08860225B2 Devices formed with dual damascene process 有权
标题翻译：器件形成双镶嵌工艺
公开(公告)号：US08860225B2
公开(公告)日：2014-10-14
申请号：US13271878
申请日：2011-10-12
申请人： Philipp Riess , Erdem Kaltalioglu , Hermann Wendt
发明人： Philipp Riess , Erdem Kaltalioglu , Hermann Wendt
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/522 , H01L21/768 , H01L21/316 , H01L23/532
CPC分类号： H01L23/53238 , H01L21/31608 , H01L21/31629 , H01L21/31695 , H01L21/76808 , H01L21/76816 , H01L23/5226 , H01L23/53228 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Structures and methods of forming metallization layers on a semiconductor component are disclosed. The method includes etching a metal line trench using a metal line mask, and etching a via trench using a via mask after etching the metal line trench. The via trench is etched only in regions common to both the metal line mask and the via mask.
摘要翻译：公开了在半导体部件上形成金属化层的结构和方法。该方法包括使用金属线掩模蚀刻金属线沟槽，并且在蚀刻金属线沟槽之后使用通孔掩模蚀刻通孔沟槽。通孔沟槽仅在金属线掩模和通孔掩模两者共同的区域中被蚀刻。

10. 发明申请

US20120119389A1 Method for Fabricating a Semiconductor Chip and Semiconductor Chip 有权
标题翻译：制造半导体芯片和半导体芯片的方法
公开(公告)号：US20120119389A1
公开(公告)日：2012-05-17
申请号：US12946138
申请日：2010-11-15
申请人： Markus Menath , Hermann Wendt , Berthold Schuderer
发明人： Markus Menath , Hermann Wendt , Berthold Schuderer
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H01L23/3114 , H01L21/3065 , H01L21/30655 , H01L21/78 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method includes structuring a semiconductor substrate to produce a number semiconductor chips. Each of the semiconductor chips includes a first main face and a number of side faces. An indentation is formed at a transition between the first main face and the side faces.
摘要翻译：一种方法包括构造半导体衬底以产生数量的半导体芯片。每个半导体芯片包括第一主面和多个侧面。在第一主面和侧面之间的过渡处形成有凹陷。

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