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1. 发明申请

US20070018755A1 Acoustic wave transducer with transverse mode suppression 有权
标题翻译：具有横向模式抑制的声波换能器
公开(公告)号：US20070018755A1
公开(公告)日：2007-01-25
申请号：US10563890
申请日：2004-06-16
申请人： Markus Mayer , Ralph Stommer , Gunter Kovacs , Andreas Bergmann , Pasi Tikka
发明人： Markus Mayer , Ralph Stommer , Gunter Kovacs , Andreas Bergmann , Pasi Tikka
IPC分类号： H03H9/64
CPC分类号： H03H9/02992 , H03H9/02881 , H03H9/14532 , H03H9/1455
摘要： The invention relates to a transducer that works with surface acoustic waves in which interfering transversal modes are suppressed. This is accomplished by mutually adapting to one another the transversal excitation profile of the acoustic wave and the transversal basic mode of the waveguide formed by the acoustic spur and adjacent exterior areas. This adaptation is accomplished by dividing the acoustic spur into an excitation area and marginal areas, whereby the width of a marginal area is approximately one-quarter wavelength of the transversal basic mode, and whereby the wave number of the transversal basic mode in the excitation area is zero. In one advantageous further development of the invention, an excitation strength that is a function of the transversal coordinate can be attained that is optimally adapted to the basic mode by dividing the excitation area in the transversal direction into partial spurs that are wired to one another serially and/or in parallel.
摘要翻译：本发明涉及一种能够抑制干扰横向模式的表面声波工作的换能器。这是通过彼此相互适应的声波的横向激励分布和由声学支线和相邻的外部区域形成的波导的横向基本模式来实现的。这种适应是通过将声学刺激分成激发区域和边缘区域来实现的，由此边缘区域的宽度大约是横向基本模式的四分之一波长，并且由此激励区域中的横向基本模式的波数是零。在本发明的一个有利的进一步发展中，可以获得作为横向坐标的函数的激励强度，其通过将横向方向上的激励区域划分为相互连接的部分马刺来最佳地适应于基本模式和/或并行。

2. 发明申请

US20060164183A1 Bulk acoustic wave resonator and circuit comprising same 有权
公开(公告)号：US20060164183A1
公开(公告)日：2006-07-27
申请号：US10530507
申请日：2003-09-18
申请人： Pasi Tikka , Ralph Stommer , Edgar Schmidhammer , Michael Unterberger
发明人： Pasi Tikka , Ralph Stommer , Edgar Schmidhammer , Michael Unterberger
IPC分类号： H03H9/70 , H03H9/58
CPC分类号： H03H9/583
摘要： The invention relates to a resonator operating with bulk acoustic waves (BAW resonator, BAW=Bulk Acoustic Wave) and band-pass filters constructed of such resonators. To increase the edge steepness of the transmission band of a BAW band-pass filter, the invention proposes reducing the effective coupling of a BAW resonator by using the connection in parallel of a BAW resonator and a capacitor instead of only one resonator. In addition, to increase the edge steepness of the transmission band, the use of a connection of coupled BAW resonators in the serial branch of a filter circuit with another resonator or resonator stack in the parallel branch of the filter circuit is proposed, the additional resonator or resonator stack being connected to the center electrode of the resonator stack specified initially.

3. 发明申请

US20050082951A1 Electrical component having overlapping electrodes, and method for the manufacture of same 有权
标题翻译：具有重叠电极的电气部件及其制造方法
公开(公告)号：US20050082951A1
公开(公告)日：2005-04-21
申请号：US10900515
申请日：2004-07-28
申请人： Pasi Tikka , Ralph Stommer , Edgar Schmidhammer , Habbo Heinze
发明人： Pasi Tikka , Ralph Stommer , Edgar Schmidhammer , Habbo Heinze
IPC分类号： H01L41/08 , H03H3/02 , H03H9/13
CPC分类号： H03H9/132
摘要： Overlapped electrodes of an electrical component are dimensioned in such a way that when there is translational displacement of one electrode in relation to the electrode situated opposite, their area of overlap remains within a manufacturing tolerance β/2, and also remains constant within the tolerance limits when there is a simultaneous rotation of the electrodes with respect to one another. This is achieved in that the intersecting edge pairs of the overlapping electrodes are designed parallel to one another, whereby the length, measured in the direction parallel to the respective edge pair, of the corresponding electrode everywhere exceeds by β the corresponding length of the area of overlap.
摘要翻译：电气部件的重叠电极的尺寸设计成使得当相对于位于相对的电极存在一个电极的平移位移时，它们的重叠面积保持在制造公差β/ 2内，并且在公差范围内保持恒定当电极相对于彼此同时旋转时。这样做的原因在于，重叠电极的相交边缘对被设计为彼此平行，由此在相应电极的平行于相应边缘对的方向上测量的长度在每个地方超过了相应的长度交叠。

4. 发明申请

US20060211261A1 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20060211261A1
公开(公告)日：2006-09-21
申请号：US11084728
申请日：2005-03-18
申请人： Ralph Stommer
发明人： Ralph Stommer
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/324 , H01L29/0847 , H01L29/1054 , H01L29/78
摘要： The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted into a surface of a semiconductor substrate such that a germanium-containing layer inside the semiconductor substrate is formed. Then, the surface of the semiconductor surface is oxidized down to and including the upper part of the germanium-containing layer, thereby pushing the implanted germanium atoms from the surface down into the semiconductor substrate and thereby enhancing the germanium concentration inside the remaining germanium-containing layer and forming a layer with enhanced germanium concentration inside the semiconductor substrate. The fabrication of the semiconductor device is concluded such that the active region of the device is placed at least partly within the layer with enhanced germanium concentration.
摘要翻译：本发明涉及半导体器件的制造方法。为了在器件的有源区域中提供高载流子迁移率，锗原子被注入到半导体衬底的表面中，使得形成半导体衬底内的含锗层。然后，将半导体表面的表面氧化到含锗层的上部并包括其上部，从而将注入的锗原子从表面向下推入半导体衬底，从而提高剩余的含锗层内的锗浓度并且在半导体衬底内形成具有增强的锗浓度的层。结论是半导体器件的制造使得器件的有源区域至少部分地放置在具有增强的锗浓度的层内。

5. 发明申请

US20060194443A1 Field effect transistor with gate spacer structure and low-resistance channel coupling 失效
标题翻译：具有栅极间隔结构和低电阻沟道耦合的场效应晶体管
公开(公告)号：US20060194443A1
公开(公告)日：2006-08-31
申请号：US11363263
申请日：2006-02-28
申请人： Matthias Goldbach , Ralph Stommer
发明人： Matthias Goldbach , Ralph Stommer
IPC分类号： H01L21/461 , H01L31/113
CPC分类号： H01L21/823864 , H01L21/82345 , H01L21/823468 , H01L21/823842 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Spacer structures of field effect transistor structures are enhanced at least in sections with immobile charge carriers. The charge accumulated in the spacer structures induces an enhancement zone of mobile charge carriers in the underlying semiconductor substrate. The enhancement zone reduces the resistance of a channel coupling between the respective source/drain region and a channel region of the respective field effect transistor structure, wherein the channel region being controlled by a potential of a gate electrode. Source/drain regions drawn back from the gate electrode of the field effect transistor structure reduce an overlap capacitance between the gate electrode and the respective source/drain regions. A method for fabricating transistor arrangements having n-FETs and p-FETs with enhanced spacer structures.
摘要翻译：场效应晶体管结构的间隔结构至少在具有固定电荷载流子的部分被增强。在间隔结构中累积的电荷在底层半导体衬底中引起移动电荷载流子的增强区。增强区减小相应的源极/漏极区域和相应的场效应晶体管结构的沟道区域之间的沟道耦合的电阻，其中沟道区域由栅电极的电位控制。从场效应晶体管结构的栅电极引出的源极/漏极区域减小了栅极电极和相应的源极/漏极区域之间的重叠电容。一种用于制造具有n-FET和具有增强的间隔结构的p-FET的晶体管布置的方法。

6. 发明申请

US20070082454A1 Microelectronic device and method of manufacturing a microelectronic device 审中-公开
标题翻译：微电子器件及其制造方法
公开(公告)号：US20070082454A1
公开(公告)日：2007-04-12
申请号：US11247982
申请日：2005-10-12
申请人： Ralph Stommer , Marc Strasser
发明人： Ralph Stommer , Marc Strasser
IPC分类号： H01L21/76 , H01L23/62 , H01L23/58
CPC分类号： H01L21/823462 , H01L21/823437 , H01L21/823487 , H01L28/40 , H01L29/512 , H01L29/517 , H01L29/518 , H01L29/66621
摘要： A microelectronic device comprises a substrate and a transistor. The transistor comprises a channel region in the substrate, a recess in the channel region, a first dielectric layer and a second dielectric layer. The first dielectric layer comprises a first dielectric material and is deposited at the bottom of the recess. The second dielectric layer comprises a second dielectric material and is deposited at a sidewall of the recess. The dielectric constant of the first dielectric material is higher than the dielectric constant of the second dielectric material. A gate electrode is positioned in the recess and is electrically insulated from the channel region by the first and second dielectric layers.
摘要翻译：微电子器件包括衬底和晶体管。晶体管包括衬底中的沟道区，沟道区中的凹槽，第一介电层和第二介电层。第一介电层包括第一电介质材料并沉积在凹槽的底部。第二电介质层包括第二电介质材料并沉积在凹槽的侧壁处。第一介电材料的介电常数高于第二介电材料的介电常数。栅极位于凹槽中，并且通过第一和第二介电层与沟道区电绝缘。

7. 发明申请

US20050244725A1 Apparatus and method for structure exposure of a photoreactive layer 审中-公开
标题翻译：光反应层结构曝光的装置和方法
公开(公告)号：US20050244725A1
公开(公告)日：2005-11-03
申请号：US11120660
申请日：2005-05-02
申请人： Ralph Stommer
发明人： Ralph Stommer
IPC分类号： G03B27/42 , G03C5/00 , G03F1/00 , G03F7/20 , G03F9/00 , G06F17/50
CPC分类号： G03F1/50 , G03F1/38
摘要： Exposure apparatus for structure exposure of a photoreactive material of a photoreactive layer with electromagnetic radiation, having a radiation source of electromagnetic radiation at a predetermined wavelength λ, a mask device in a form of a plate and having input and output faces for electromagnetic radiation. The mask device has a mask structure element composed of a mask material, which has a predetermined refractive index ncore at the wavelength of the electromagnetic radiation, and a surrounding material which is adjacent to surfaces of the mask structure element, which run essentially at right angles to an x direction and have a refractive index nxclad at the predetermined wavelength, with the x direction being a predetermined direction parallel to a plate level of the mask device, and having predetermined mathematical relationships between the variables ncore, nxclad, λ and dxcore, with dxcore being the extent of the mask structure element in the x direction.
摘要翻译：用于具有电磁辐射的光反应层的光反应性材料结构曝光的曝光装置，具有预定波长λ的电磁辐射辐射源，板形式的掩模装置，并具有用于电磁辐射的输入和输出面。掩模装置具有掩模结构元件，该掩模结构元件由在电磁辐射波长处具有预定折射率的核心的掩模材料构成，并且与掩模结构的表面相邻的周围材料元件，其基本上与x方向成直角，并且具有预定波长的折射率n×xadad，x方向是平行于掩模装置的板级的预定方向，以及在变量n ，n×xclad，λ和d xcore之间具有预定的数学关系，其中d xcore 为掩模结构元件在x方向上的程度。

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