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1. 发明授权

US06590271B2 Extension of shallow trench isolation by ion implantation 有权
公开(公告)号：US06590271B2
公开(公告)日：2003-07-08
申请号：US09939337
申请日：2001-08-24
申请人： Mark Y. Liu , Leonard C. Pipes , Mitchell C. Taylor
发明人： Mark Y. Liu , Leonard C. Pipes , Mitchell C. Taylor
IPC分类号： H01L2176
CPC分类号： H01L21/76237
摘要： A shallow trench isolation (STI) structure is formed by etching trenches into the surface of a substrate in alignment with a patterned masking layer. An ion implantation of, for example, carbon, nitrogen, or oxygen, is performed so as to create an electrically insulating layer extending downwardly from a bottom surface of the trench. By implanting such extensions, STI structures with greater effective aspect ratios may be obtained which, in turn, allow greater packing density in integrated circuits. Implanted isolation structures may be formed without etching a trench by implanting into regions of the substrate. In this way, trench etch, dielectric back-fill, and planarization operations can be eliminated. Furthermore the implanted regions may be formed by multiple implants at different energies so as to obtain multiple, typically contiguous, target ranges. Ions of various masses or charges may be used so as to obtain the desired implant depth and concentration profile in the isolation structures, independent of whether these structures are trench extensions or formed directly beneath a planarized substrate surface.

2. 发明授权

US06432798B1 Extension of shallow trench isolation by ion implantation 有权
标题翻译：通过离子注入扩展浅沟槽隔离
公开(公告)号：US06432798B1
公开(公告)日：2002-08-13
申请号：US09636297
申请日：2000-08-10
申请人： Mark Y. Liu , Leonard C. Pipes , Mitchell C. Taylor
发明人： Mark Y. Liu , Leonard C. Pipes , Mitchell C. Taylor
IPC分类号： H01L2176
CPC分类号： H01L21/76237
摘要： A shallow trench isolation (STI) structure is formed by etching trenches into the surface of a substrate in alignment with a patterned masking layer. An ion implantation of, for example, carbon, nitrogen, or oxygen, is performed so as to create an electrically insulating layer extending downwardly from a bottom surface of the trench. By implanting such extensions, STI structures with greater effective aspect ratios may be obtained which, in turn, allow greater packing density in integrated circuits. Implanted isolation structures may be formed without etching a trench by implanting into regions of the substrate. In this way, trench etch, dielectric back-fill, and planarization operations can be eliminated. Furthermore the implanted regions may be formed by multiple implants at different energies so as to obtain multiple, typically contiguous, target ranges. Ions of various masses or charges may be used so as to obtain the desired implant depth and concentration profile in the isolation structures, independent of whether these structures are trench extensions or formed directly beneath a planarized substrate surface.
摘要翻译：通过将沟槽蚀刻到与图案化掩模层对准的衬底的表面中来形成浅沟槽隔离（STI）结构。进行例如碳，氮或氧的离子注入，以形成从沟槽的底表面向下延伸的电绝缘层。通过植入这种扩展，可以获得具有更大有效纵横比的STI结构，这又可以在集成电路中允许更大的堆积密度。可以通过注入到衬底的区域中而不蚀刻沟槽来形成植入式隔离结构。以这种方式，可以消除沟槽蚀刻，电介质背面填充和平坦化操作。此外，植入区域可以由不同能量的多个植入物形成，以便获得多个通常连续的目标范围。可以使用各种质量或电荷的离子，以便在隔离结构中获得期望的注入深度和浓度分布，而不管这些结构是沟槽延伸还是直接形成在平坦化的衬底表面下方。

3. 发明授权

US07061068B2 Shallow trench isolation structures having uniform and smooth topography 失效
标题翻译：浅沟槽隔离结构具有均匀光滑的地形
公开(公告)号：US07061068B2
公开(公告)日：2006-06-13
申请号：US10764751
申请日：2004-01-26
申请人： Leonard C. Pipes , Rita Slilaty
发明人： Leonard C. Pipes , Rita Slilaty
IPC分类号： H01L29/00
CPC分类号： H01L21/31053 , H01L21/76237
摘要： Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation (STI) structure. The ion implantation can change or affect the polish rates of the material and the polish selectivity, and reduce or minimize unwanted topography resulting from chemical mechanical polishing (CMP). After CMP, the resulting STI structure has a more uniform and smooth topography.
摘要翻译：在形成浅沟槽隔离（STI）结构期间，将离子注入半导体衬底上的电介质层和/或阻挡层中以改变两层或两层的抛光速率。离子注入可以改变或影响材料的抛光速率和抛光选择性，并且减少或最小化由化学机械抛光（CMP）引起的不希望的形貌。在CMP之后，所得到的STI结构具有更均匀和平滑的形貌。

4. 发明授权

US06713385B1 Implanting ions in shallow trench isolation structures 有权
标题翻译：在浅沟槽隔离结构中植入离子
公开(公告)号：US06713385B1
公开(公告)日：2004-03-30
申请号：US10285109
申请日：2002-10-31
申请人： Leonard C. Pipes , Rita Slilaty
发明人： Leonard C. Pipes , Rita Slilaty
IPC分类号： H01L214763
CPC分类号： H01L21/31053 , H01L21/76237
摘要： Ions are implanted into the dielectric layer and/or barrier layer over a semiconductor substrate to change the polish rates of either or both layers during formation of a shallow trench isolation (STI) structure. The ion implantation can change or affect the polish rates of the material and the polish selectivity, and reduce or minimize unwanted topography resulting from chemical mechanical polishing (CMP). After CMP, the resulting STI structure has a more uniform and smooth topography.
摘要翻译：在形成浅沟槽隔离（STI）结构期间，将离子注入半导体衬底上的电介质层和/或阻挡层中以改变两层或两层的抛光速率。离子注入可以改变或影响材料的抛光速率和抛光选择性，并且减少或最小化由化学机械抛光（CMP）引起的不希望的形貌。在CMP之后，所得到的STI结构具有更均匀和平滑的形貌。

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