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1. 发明授权

US6153443A Method of fabricating a magnetic random access memory 失效
标题翻译：制造磁性随机存取存储器的方法
公开(公告)号：US6153443A
公开(公告)日：2000-11-28
申请号：US216821
申请日：1998-12-21
申请人： Mark Durlam , Gloria Kerszykowski , Jon M. Slaughter , Eugene Chen , Saied N. Tehrani , Kelly W. Kyler , X. Theodore Zhu
发明人： Mark Durlam , Gloria Kerszykowski , Jon M. Slaughter , Eugene Chen , Saied N. Tehrani , Kelly W. Kyler , X. Theodore Zhu
IPC分类号： G11C11/14 , G11C11/15 , H01F10/14 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L27/22 , H01L43/08 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , H01L27/115
摘要： An improved and novel fabrication method for magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (53, 54). A dielectric layer (40, 41) is deposited on the circuit, and trenches (42, 43) are formed in the dielectric layer. A blanket layer (46), which includes magnetic layers (48, 49) and a non-magnetic layer (50) sandwiched by the magnetic layers, is deposited on dielectric layer (41) and in the trenches. Then, the blanket layer outside the trenches is removed and MRAM elements (53, 54) are formed in the trenches.
摘要翻译：提供了一种用于磁阻随机存取存储器（MRAM）的改进和新颖的制造方法。 MRAM设备具有用于管理存储器元件的存储器元件和电路。电路包括集成在基板（11）上的晶体管（12a），数字线（29）等。首先在CMOS工艺之下制造电路，然后制造磁存储元件（53,54）。电介质层（40,41）沉积在电路上，并在电介质层中形成沟槽（42,43）。包含磁性层（48,49）和由磁性层夹着的非磁性层（50）的覆盖层（46）沉积在电介质层（41）和沟槽中。然后，去除沟槽外的覆盖层，并在沟槽中形成MRAM元件（53,54）。

2. 发明授权

US06518071B1 Magnetoresistive random access memory device and method of fabrication thereof 失效
标题翻译：磁阻随机存取存储器件及其制造方法
公开(公告)号：US06518071B1
公开(公告)日：2003-02-11
申请号：US10109429
申请日：2002-03-28
申请人： Mark A. Durlam , Mark F. Deherrera , Kelly W. Kyler , Brian R. Butcher , Gregory W. Grynkewich , Steven M. Smith , Charles Snyder , Jon M. Slaughter
发明人： Mark A. Durlam , Mark F. Deherrera , Kelly W. Kyler , Brian R. Butcher , Gregory W. Grynkewich , Steven M. Smith , Charles Snyder , Jon M. Slaughter
IPC分类号： H01L2100
CPC分类号： H01L43/12
摘要： A method of fabricating a MRAM device with a taper comprising the steps of providing a substrate, forming a dielectric region with positioned on the substrate, patterning and isotropically etching through the dielectric region to the substrate to form a trench, depositing the MRAM device within the trench wherein the MRAM device includes a first ferromagnetic region with a width positioned on the substrate, a non-ferromagnetic spacer layer with a width positioned on the first ferromagnetic region, and a second ferromagnetic region with a width positioned on the non-ferromagnetic spacer layer wherein the taper is formed by making the width of the first ferromagnetic region greater than the width of the non-ferromagnetic spacer layer, and the width of the non-ferromagnetic spacer layer greater than the width of the second ferromagnetic region so that the first ferromagnetic region is separated from the second ferromagnetic region.
摘要翻译：一种制造具有锥形的MRAM器件的方法，包括以下步骤：提供衬底，形成位于衬底上的电介质区域，对介质区域进行图案化和各向同性地蚀刻到衬底以形成沟槽，将MRAM器件沉积在沟槽，其中MRAM器件包括位于衬底上的宽度的第一铁磁区域，具有位于第一铁磁区域上的宽度的非铁磁间隔层，以及位于非铁磁间隔层上的宽度的第二铁磁区域其中所述锥形通过使所述第一铁磁性区域的宽度大于所述非铁磁间隔层的宽度而形成，并且所述非铁磁隔离层的宽度大于所述第二铁磁区域的宽度，使得所述第一铁磁性区域区域与第二铁磁区域分离。

3. 发明授权

US08237437B2 Two-axis magnetic field sensor with multiple pinning directions 有权
标题翻译：具有多个钉扎方向的双轴磁场传感器
公开(公告)号：US08237437B2
公开(公告)日：2012-08-07
申请号：US13023260
申请日：2011-02-08
申请人： Bradley N Engel , Phillip G. Mather , Jon M. Slaughter
发明人： Bradley N Engel , Phillip G. Mather , Jon M. Slaughter
IPC分类号： G01R33/09 , G01R33/02
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3272 , H01F41/304 , H01F41/308 , H01L27/22
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.
摘要翻译：制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。在加热和冷却时，铁磁膜被固定在不同的期望方向上。

4. 发明授权

US07067331B2 Method of making amorphous alloys for semiconductor device 有权
标题翻译：制造半导体器件的非晶合金的方法
公开(公告)号：US07067331B2
公开(公告)日：2006-06-27
申请号：US10980930
申请日：2004-11-03
申请人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
发明人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/12431
摘要： An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.
摘要翻译：公开了一种适用于磁电子器件的钴铁基（CoFe基）磁性合金的非晶层。在本发明的最优选实施例中，在MTJ叠层中提供至少一个非晶层，以增加MTJ叠层中各层的平滑度，同时也提高所得装置的磁性能。此外，本发明的合金还可用于包覆应用中，以提供用于磁电子器件中的信号线的电流容纳以及用作制造写入头的材料。

5. 发明授权

US08497538B2 MRAM synthetic antiferromagnet structure 有权
标题翻译： MRAM合成反铁磁结构
公开(公告)号：US08497538B2
公开(公告)日：2013-07-30
申请号：US11444089
申请日：2006-05-31
申请人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

6. 发明授权

US08257596B2 Two-axis magnetic field sensor with substantially orthogonal pinning directions 有权
标题翻译：两轴磁场传感器具有基本正交的钉扎方向
公开(公告)号：US08257596B2
公开(公告)日：2012-09-04
申请号：US12433679
申请日：2009-04-30
申请人： Phillip G. Mather , Jon M. Slaughter
发明人： Phillip G. Mather , Jon M. Slaughter
IPC分类号： B44C1/22 , G08B17/12
CPC分类号： G01R31/318357 , B82Y25/00 , G01R33/072 , G01R33/093 , G01R33/098 , Y10T29/4902
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layer with a properly aligned orienting field (90) and then removing the orienting field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions by one of 1) tailoring the intrinsic anisotropy of the reference layer during the depositing step, 2) forming a long axes of one of the patterned shapes (62, 63) at a non-orthogonal angle to the long axes of the other patterned shape (62, 63) when etched, or 3) applying a compensating field when pinning the reference layers.
摘要翻译：制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对准的定向场（90）处理参考层，然后去除定向场时，高纵横比图案提供使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。在加热和冷却时，铁磁膜通过以下步骤中的一种被钉扎在不同的期望方向：1）在沉积步骤期间调整参考层的固有各向异性; 2）形成一个图案形状（62,63）的长轴，在蚀刻时与另一图案形状（62,63）的长轴成非正交角，或者3）在固定参考层时施加补偿场。

7. 发明授权

US07684161B2 Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence 有权
标题翻译：具有降低温度依赖性的合成反铁磁体结构的方法和装置
公开(公告)号：US07684161B2
公开(公告)日：2010-03-23
申请号：US11406566
申请日：2006-04-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
摘要翻译：合成反铁磁体（SAF）结构包括第一铁磁层，第一插入层，耦合层，第二插入层和第二铁磁层。插入层包括选择的材料，使得SAF显示降低的反铁磁耦合强度的温度依赖性。插入层可以包括CoFe或CoFeX合金。选择插入层的厚度使得它们不增加单轴各向异性或劣化任何其它性质。

8. 发明授权

US07635902B2 Low power magnetoelectronic device structures utilizing enhanced permeability materials 失效
标题翻译：利用增强的渗透性材料的低功率磁电子器件结构
公开(公告)号：US07635902B2
公开(公告)日：2009-12-22
申请号：US11867189
申请日：2007-10-04
申请人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
发明人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5.A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
摘要翻译：提供了低功率磁电子器件结构及其制造方法。一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。增强的导电介电材料具有不小于约1.5的渗透性。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102）并沉积导线（104）。形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于磁电子器件。

9. 发明申请

US20090279212A1 Two-Axis Magnetic Field Sensor with Multiple Pinning Directions 有权
标题翻译：具有多个固定方向的双轴磁场传感器
公开(公告)号：US20090279212A1
公开(公告)日：2009-11-12
申请号：US12117396
申请日：2008-05-08
申请人： Bradley N. Engel , Phillip G. Mather , Jon M. Slaughter
发明人： Bradley N. Engel , Phillip G. Mather , Jon M. Slaughter
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/093 , H01F10/3272 , H01F41/304 , H01F41/308 , H01L27/22
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layers with a properly aligned saturating field (90) and then removing the saturating field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions.
摘要翻译：制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对齐的饱和场（90）处理参考层，然后去除饱和场时，高纵横比图案提供使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。在加热和冷却时，铁磁膜被固定在不同的期望方向上。

10. 发明授权

US07098495B2 Magnetic tunnel junction element structures and methods for fabricating the same 有权
公开(公告)号：US07098495B2
公开(公告)日：2006-08-29
申请号：US10899610
申请日：2004-07-26
申请人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
发明人： JiJun Sun , Renu W. Dave , Jon M. Slaughter , Johan Akerman
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/132 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/12
摘要： Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer.Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.

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