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1. 发明申请

US20070235839A1 Semiconductor devices utilizing AlGaAsP 审中-公开
标题翻译：利用AlGaAsP的半导体器件
公开(公告)号：US20070235839A1
公开(公告)日：2007-10-11
申请号：US11246346
申请日：2005-10-07
申请人： Mark DeVito , Paul Crump , Jun Wang , Weimin Dong , Michael Grimshaw , Christopher Ebert
发明人： Mark DeVito , Paul Crump , Jun Wang , Weimin Dong , Michael Grimshaw , Christopher Ebert
IPC分类号： H01L29/20 , H01L21/00
CPC分类号： H01S5/343 , B82Y20/00 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L31/03046 , H01L31/04 , Y02E10/544
摘要： A method of minimizing stress within large area semiconductor devices which utilize a GaAs substrate and one or more thick layers of AlxGa1-xAs is provided, as well as the resultant device. In general, each thick AlxGa1-xAs layer within the semiconductor structure is replaced, during the structure's fabrication, with an AlxGa1-xAszP1-z layer of approximately the same thickness and with the same concentrations of Al and Ga. The AlxGa1-xAszP1-z layer is lattice matched to the GaAs substrate by replacing a small percentage of the As in the layer with P.
摘要翻译：提供了利用GaAs衬底和一个或多个厚层的Al x Ga 1-x As As的大面积半导体器件内的应力最小化的方法，以及结果装置。通常，半导体结构中的每个厚的Al x Al x Ga 1-x O As层在结构的制造期间被替换为Al x 大约相同厚度和相同浓度的Al和Ga的Ga 1-x S 1 z z 1 1 z z层，Al < 通过代替小的GaN层，与GaN衬底晶格匹配， As在与P的层中的百分比

2. 发明申请

US20070053396A1 Semiconductor lasers utilizing AlGaAsP 审中-公开
标题翻译：利用AlGaAsP的半导体激光器
公开(公告)号：US20070053396A1
公开(公告)日：2007-03-08
申请号：US11212420
申请日：2005-08-24
申请人： Mark DeVito , Paul Crump , Jun Wang , Weimin Dong , Michael Grimshaw
发明人： Mark DeVito , Paul Crump , Jun Wang , Weimin Dong , Michael Grimshaw
IPC分类号： H01S3/14
CPC分类号： H01S5/343 , B82Y20/00
摘要： A means of controlling the stress in a laser diode structure through the use of AlGaAsP is provided. Depending upon the amount of phosphorous in the material, it can be used to either match the lattice constant of GaAs, thus forming a strainless structure, or mismatch the lattice constant of GaAs, thereby adding tensile stress to the structure. Tensile stress can be used to mitigate the compressive stress due to material mismatches within the structure (e.g., a highly strained compressive quantum well), or due to the heat sink bonding procedure.
摘要翻译：提供了通过使用AlGaAsP来控制激光二极管结构中的应力的手段。取决于材料中磷的含量，它可以用于匹配GaAs的晶格常数，从而形成无应变结构，或使GaAs的晶格常数失配，从而为结构增加拉应力。可以使用拉伸应力来减轻由于结构内的材料错配（例如，高应变压缩量子阱）或由于散热器结合过程引起的压缩应力。

3. 发明申请

US20060023763A1 Semiconductor lasers with hybrid materials systems 审中-公开
标题翻译：半导体激光器与混合材料系统
公开(公告)号：US20060023763A1
公开(公告)日：2006-02-02
申请号：US10902224
申请日：2004-07-28
申请人： Jason Farmer , Mark DeVito , Zhe Huang , Paul Crump , Michael Grimshaw , Prabhuram Thiagarajan , Weimin Dong , Jun Wang
发明人： Jason Farmer , Mark DeVito , Zhe Huang , Paul Crump , Michael Grimshaw , Prabhuram Thiagarajan , Weimin Dong , Jun Wang
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/3213 , H01S5/343
摘要： A semiconductor laser and a method of forming the same are provided. The semiconductor laser includes cladding layers comprised of hybrid materials systems which have different conduction to valance band gap offset ratios with respect to GaAs. As a result of these hybrid structures, lower junction voltages on both the n-side and p-side of the laser structure are achieved, thereby increasing the electrical to optical conversion efficiency of the laser.
摘要翻译：提供半导体激光器及其形成方法。半导体激光器包括由相对于GaAs具有不同的传导与价带宽偏移比的混合材料系统组成的覆层。作为这些混合结构的结果，实现了激光器结构的n侧和p侧的较低的结电压，从而增加了激光器的电转换效率。

4. 发明授权

US09343873B2 Laser diode with high efficiency 有权
标题翻译：激光二极管效率高
公开(公告)号：US09343873B2
公开(公告)日：2016-05-17
申请号：US13823277
申请日：2011-09-12
申请人： Paul Crump , Goetz Erbert , Hans Wenzel
发明人： Paul Crump , Goetz Erbert , Hans Wenzel
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , A61B18/20 , A61B18/00 , A61B19/00 , H01S5/32
CPC分类号： H01S5/20 , A61B18/203 , A61B2018/00476 , A61B2090/049 , H01S5/2031 , H01S5/22 , H01S5/3213 , H01S2301/185
摘要： It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time.For this purpose, the active layer (10), the first cladding layer (14), the first waveguide layer (12), the second waveguide layer (16), and the second cladding layer (18) should be designed such that 0.01 μm≦dwL≦1.0 μm and Δn≧0.04, where dwL is the sum total of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10), and the layer thickness of the second waveguide layer (16) and Δn is a maximum of the refractive index difference between the first cladding layer (14) and the first waveguide layer (12) and the refractive index difference between the second waveguide layer (16) and the second cladding layer (18).
摘要翻译：本发明的目的是同时具有高效率和高眼睛安全性的光源。为此，应设计有源层（10），第一覆层（14），第一波导层（12），第二波导层（16）和第二覆层（18），使得0.01μm＆ ; dwL＆nlE;1.0μm和＆Dgr;n≥0.04，其中dwL是第一波导层（12）的层厚度的总和，有源层（10）的层厚度和第二波导的层厚度层（16）和＆Dgr; n是第一包层（14）和第一波导层（12）之间的折射率差的最大值和第二波导层（16）与第二包层之间的折射率差（18）。

5. 发明申请

US20130208748A1 LASER DIODE WITH HIGH EFFICIENCY 有权
标题翻译：激光二极管效率高
公开(公告)号：US20130208748A1
公开(公告)日：2013-08-15
申请号：US13823277
申请日：2011-09-12
申请人： Paul Crump , Goetz Erbert , Hans Wenzel
发明人： Paul Crump , Goetz Erbert , Hans Wenzel
IPC分类号： H01S5/20
CPC分类号： H01S5/20 , A61B18/203 , A61B2018/00476 , A61B2090/049 , H01S5/2031 , H01S5/22 , H01S5/3213 , H01S2301/185
摘要： It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time.For this purpose, the active layer (10), the first cladding layer (14), the first waveguide layer (12), the second waveguide layer (16), and the second cladding layer (18) should be designed such that 0.01 μm≦dWL≦1.0 μm and Δn≧0.04, where dWL is the sum total of the layer thickness of the first waveguide layer (12), the layer thickness of the active layer (10), and the layer thickness of the second waveguide layer (16) and Δn is a maximum of the refractive index difference between the first cladding layer (14) and the first waveguide layer (12) and the refractive index difference between the second waveguide layer (16) and the second cladding layer (18).
摘要翻译：本发明的目的是同时具有高效率和高眼睛安全性的光源。为此，应设计有源层（10），第一覆层（14），第一波导层（12），第二波导层（16）和第二覆层（18），使得0.01μm @ dWL @ 1.0mum和Deltan> = 0.04，其中dWL是第一波导层（12）的层厚度的总和，有源层（10）的层厚度和第二波导层的层厚度（16）和Deltan是第一包层（14）和第一波导层（12）之间的折射率差和第二波导层（16）与第二包层（18）之间的折射率差的最大值，。

6. 发明授权

US08798109B2 High-efficiency diode laser 有权
标题翻译：高效二极管激光器
公开(公告)号：US08798109B2
公开(公告)日：2014-08-05
申请号：US13978222
申请日：2011-12-28
申请人： Erbert Götz , Hans Wenzel , Paul Crump
发明人： Erbert Götz , Hans Wenzel , Paul Crump
IPC分类号： H01S5/10
CPC分类号： H01S5/2018 , H01S5/2031 , H01S5/3213 , H01S2301/166 , H01S2301/18
摘要： A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.
摘要翻译：激光二极管具有第一n导电包覆层，布置在其中的第一n导电波导层，有源层适于产生布置在第一波导层上的辐射，布置在有源层上的第二导电波导层以及第二导电包覆层，布置在第二波导层上，第一波导层的层厚度之和，有源层的层厚度和第二波导层的层厚度之和大于1μm，第二波导层的层厚小于150nm。基模的最大模式强度在有源层外侧的区域中，第一波导层的折射率与第一包层的折射率之差为0.04〜0.01。

7. 发明授权

US08537869B2 Broad area diode laser with high efficiency and small far-field divergence 有权
标题翻译：广域二极管激光器具有效率高，远场偏差小
公开(公告)号：US08537869B2
公开(公告)日：2013-09-17
申请号：US13464495
申请日：2012-05-04
申请人： Paul Crump , Goetz Erbert , Hans Wenzel , Joerg Fricke
发明人： Paul Crump , Goetz Erbert , Hans Wenzel , Joerg Fricke
IPC分类号： H01S5/00
CPC分类号： H01S5/2036 , H01S5/20 , H01S5/205 , H01S2301/18
摘要： A broad area laser, with high efficiency and small far-field divergence, has an active layer, a first contact and a second contact, each having a width larger than 10 μm. An anti-wave guiding layer, which is positioned laterally with respect to the active region, is enclosed between the first and second contacts, wherein a refractive index of the anti-wave guiding layer is larger than a minimum refractive index of cladding layers. A minimum distance between the anti-wave guiding layer and a projection of one of the contacts on the plane of the anti-wave guiding layer is between 0 and 100 μm.
摘要翻译：具有高效率和小的远场散度的广域激光器具有宽度大于10um的有源层，第一接触和第二接触。相对于有源区域侧向定位的反波导层被包围在第一和第二触点之间，其中反射波导层的折射率大于包覆层的最小折射率。抗波导层与抗波导层平面上的触点之间的最小距离在0和100μm之间。

8. 发明申请

US20130287057A1 HIGH-EFFICIENCY DIODE LASER 有权
标题翻译：高效二极管激光
公开(公告)号：US20130287057A1
公开(公告)日：2013-10-31
申请号：US13978222
申请日：2011-12-28
申请人： Erbert Götz , Hans Wenzel , Paul Crump
发明人： Erbert Götz , Hans Wenzel , Paul Crump
IPC分类号： H01S5/20
CPC分类号： H01S5/2018 , H01S5/2031 , H01S5/3213 , H01S2301/166 , H01S2301/18
摘要： A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.
摘要翻译：激光二极管具有第一n导电包覆层，布置在其中的第一n导电波导层，有源层适于产生布置在第一波导层上的辐射，布置在有源层上的第二导电波导层和第二导电包覆层，布置在第二波导层上，第一波导层的层厚度之和，有源层的层厚度和第二波导层的层厚度之和大于1μm，第二波导层的层厚小于150nm。基模的最大模式强度在有源层外侧的区域中，第一波导层的折射率与第一包层的折射率之差为0.04〜0.01。

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