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1. 发明授权

US08299416B2 High speed quantum efficiency measurement apparatus utilizing solid state lightsource 有权
标题翻译：利用固态光源的高速量子效率测量装置
公开(公告)号：US08299416B2
公开(公告)日：2012-10-30
申请号：US12660688
申请日：2010-03-01
申请人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01N21/64 , G01J1/58
CPC分类号： G01N21/55 , G01N21/59 , G01N2021/556 , G01N2201/0627 , G01N2201/0691 , H02S50/10
摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.
摘要翻译：本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是监控。提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

2. 发明申请

US20100219327A1 High speed quantum efficiency measurement apparatus utilizing solid state lightsource 有权
标题翻译：利用固态光源的高速量子效率测量装置
公开(公告)号：US20100219327A1
公开(公告)日：2010-09-02
申请号：US12660688
申请日：2010-03-01
申请人： Mark A. Arbore , David L. Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Mark A. Arbore , David L. Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01J1/44 , G01N21/55
CPC分类号： G01N21/55 , G01N21/59 , G01N2021/556 , G01N2201/0627 , G01N2201/0691 , H02S50/10
摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.
摘要翻译：本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是监控。提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

3. 发明申请

US20100201374A1 High speed detection of shunt defects in photovoltaic and optoelectronic devices 有权
标题翻译：光电和光电器件分流缺陷的高速检测
公开(公告)号：US20100201374A1
公开(公告)日：2010-08-12
申请号：US12658489
申请日：2010-02-08
申请人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01R31/04
CPC分类号： G01R31/2656 , G01N21/66 , H02S50/10
摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.
摘要翻译：本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据过热风险等级。

4. 发明授权

US08278937B2 High speed detection of shunt defects in photovoltaic and optoelectronic devices 有权
标题翻译：光电和光电器件分流缺陷的高速检测
公开(公告)号：US08278937B2
公开(公告)日：2012-10-02
申请号：US12658489
申请日：2010-02-08
申请人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01R31/02
CPC分类号： G01R31/2656 , G01N21/66 , H02S50/10
摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.
摘要翻译：本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据过热风险等级。

5. 发明授权

US07538333B1 Contactless charge measurement of product wafers and control of corona generation and deposition 失效
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07538333B1
公开(公告)日：2009-05-26
申请号：US11460517
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： H01J37/30 , H01J37/317 , G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

6. 发明授权

US07248062B1 Contactless charge measurement of product wafers and control of corona generation and deposition 有权
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07248062B1
公开(公告)日：2007-07-24
申请号：US10701112
申请日：2003-11-04
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

7. 发明授权

US07719294B1 Systems configured to perform a non-contact method for determining a property of a specimen 有权
标题翻译：被配置为执行用于确定样本的属性的非接触方法的系统
公开(公告)号：US07719294B1
公开(公告)日：2010-05-18
申请号：US11460505
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems configured to perform a non-contact method for determining a property of a specimen are provided. One system configured to perform a non-contact method for determining a property of a specimen includes a focused biasing device configured to provide a stimulus to a focused spot on the specimen. The system also includes a sensor configured to measure a parameter of a measurement spot on the specimen. The measurement spot overlaps the focused spot. The system further includes a processor configured to determine the property of the specimen from the parameter.
摘要翻译：提供被配置为执行用于确定样本的属性的非接触方法的系统。被配置为执行用于确定样本的属性的非接触方法的一个系统包括被配置为向所述样本上的聚焦点提供刺激的聚焦偏置装置。该系统还包括被配置为测量样品上的测量点的参数的传感器。测量点与聚焦点重叠。该系统还包括处理器，该处理器被配置为根据该参数确定样本的属性。

8. 发明授权

US07012438B1 Methods and systems for determining a property of an insulating film 失效
标题翻译：用于确定绝缘膜性能的方法和系统
公开(公告)号：US07012438B1
公开(公告)日：2006-03-14
申请号：US10616086
申请日：2003-07-09
申请人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
发明人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
IPC分类号： G01R27/08 , G01R27/26 , G01N27/60
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.
摘要翻译：提供一种用于确定绝缘膜的性质的方法。该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。提供一种确定绝缘膜厚度的方法。该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。该方法还可以包括使用电压衰减速率和与泄漏和膜厚度有关的理论模型来确定膜的厚度。

9. 发明授权

US06335630B1 Contactless method for measuring total charge of an oxide layer on a semiconductor wafer using corona charge 有权
公开(公告)号：US06335630B1
公开(公告)日：2002-01-01
申请号：US09749485
申请日：2000-12-26
申请人： Tom G. Miller , Roger L. Verkuil , Gregory S. Horner
发明人： Tom G. Miller , Roger L. Verkuil , Gregory S. Horner
IPC分类号： G01R3126
摘要： A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.

10. 发明授权

US07358748B1 Methods and systems for determining a property of an insulating film 有权
标题翻译：用于确定绝缘膜性能的方法和系统
公开(公告)号：US07358748B1
公开(公告)日：2008-04-15
申请号：US11291075
申请日：2005-11-30
申请人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
发明人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
IPC分类号： G01R27/08 , G01R27/26 , G01R31/302 , G01N27/60
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.
摘要翻译：提供一种用于确定绝缘膜的性质的方法。该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。提供一种确定绝缘膜厚度的方法。该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。该方法还可以包括使用电压衰减速率和与电流泄漏和膜厚度有关的理论模型来确定膜的厚度。

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