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1. 发明授权

US06587605B2 Method and apparatus for providing optical interconnection 有权
公开(公告)号：US06587605B2
公开(公告)日：2003-07-01
申请号：US09780174
申请日：2001-02-09
申请人： Mario J. Paniccia , Michael T. Morse , Valluri R. M. Rao
发明人： Mario J. Paniccia , Michael T. Morse , Valluri R. M. Rao
IPC分类号： G02B612
CPC分类号： G02F1/025 , G02B6/43
摘要： A method and an apparatus providing an optical interconnection in an integrated circuit die. In one embodiment, an optical interconnection is used to optically interconnect a waveguide-based optical modulator through the insulating layer and back side of the semiconductor substrate of the integrated circuit die. In one embodiment, an insulating oxide layer is disposed between a semiconductor waveguide optical modulator and the back side of the semiconductor substrate. Optical conduits are disposed in the insulating oxide layer at the locations where light enters and exits the semiconductor waveguide optical modulator. In one embodiment, the optical conduits have indexes of refraction substantially equal to the indexes of refraction of the semiconductor substrate and the semiconductor waveguide optical modulator. Thus, attenuation of the light used to optically couple the semiconductor waveguide optical modulator through the back side of the semiconductor substrate is reduced.

2. 发明授权

US6125217A Clock distribution network 失效
标题翻译：时钟分配网络
公开(公告)号：US6125217A
公开(公告)日：2000-09-26
申请号：US105502
申请日：1998-06-26
申请人： Mario J. Paniccia , Ian A. Young , Thomas P. Thomas , Valluri R. M. Rao
发明人： Mario J. Paniccia , Ian A. Young , Thomas P. Thomas , Valluri R. M. Rao
IPC分类号： G02B6/42 , G02B6/43 , G06F1/10 , G02B6/12 , G06F1/04
CPC分类号： G02B6/43 , G06F1/105 , G02B6/4249
摘要： A method and an apparatus for providing an optical clock distribution network. In one embodiment, an optical source is configured to emit optical pulses at a desired clock frequency. The optical pulses are separated into a plurality of split optical pulses, each of which is received by a clock receiver node in a semiconductor die. In one embodiment, each clock receiver node locally generates a photocurrent in response to the split optical beams. Each of the photocurrents is locally converted into voltage and thus into local clock signals, which are used to clock the local area of the integrated circuit. In one embodiment, the semiconductor die includes an additional clock receiver node used to clock a clock generation circuit included in the semiconductor die. The clock generation circuit generates clock signals that are in phase with each other and the other clock signals generated throughout the semiconductor die. In one embodiment, the clock signals generated by the clock generation circuit are used to clock and phase lock input/output communications on the semiconductor die as well as off chip input/output communications between the semiconductor die and other external semiconductor dice of the system.
摘要翻译：一种用于提供光时钟分配网络的方法和装置。在一个实施例中，光源被配置为以期望的时钟频率发射光脉冲。光脉冲被分离成多个分裂光脉冲，每个分裂光脉冲由半导体管芯中的时钟接收器节点接收。在一个实施例中，响应于分离的光束，每个时钟接收器节点局部地产生光电流。每个光电流被局部地转换成电压并因此被转换成本地时钟信号，这些时钟信号用于对集成电路的局部区域进行时钟。在一个实施例中，半导体管芯包括用于对包括在半导体管芯中的时钟产生电路进行时钟的附加时钟接收器节点。时钟发生电路产生彼此同相的时钟信号和在整个半导体管芯中产生的其它时钟信号。在一个实施例中，由时钟产生电路产生的时钟信号用于在半导体管芯上进行时钟和锁相输入/输出通信，以及半导体管芯与系统的其它外部半导体管芯之间的离线输入/输出通信。

3. 发明授权

US6072179A Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit 有权
标题翻译：使用基于红外激光的光学探针的方法和装置，用于直接从集成电路中的有源区测量电压
公开(公告)号：US6072179A
公开(公告)日：2000-06-06
申请号：US130741
申请日：1998-08-07
申请人： Mario J. Paniccia , Valluri R. M. Rao , Wai Mun Yee
发明人： Mario J. Paniccia , Valluri R. M. Rao , Wai Mun Yee
IPC分类号： G01R1/06 , G01N21/41 , G01R19/00 , G01R31/302 , G01R31/311 , G01R31/28
CPC分类号： G01R31/311
摘要： A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 .mu.m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.
摘要翻译：一种用于检测设置在半导体中的集成电路的有源区域中的电场的方法和装置。在一个实施例中，激光束以大于约0.9μm的波长工作。激光束通过半导体衬底的背面聚焦到P-N结，例如MOS晶体管的漏极。作为自由载体吸收的结果，激光束在P-N结附近被部分吸收。当在P-N结上施加信号时，将根据P-N结附近的耗尽区的调制来调制自由载流子吸收的程度。激光束穿过P-N结区域，从结点后面的氧化物界面和金属反射出来，并通过P-N结返回并返回硅表面。用光学检测系统检测该反射激光束中的幅度调制。

4. 发明授权

US6049639A Method and apparatus providing optical input/output through the back side of an integrated circuit die 失效
标题翻译：通过集成电路管芯的背侧提供光输入/输出的方法和装置
公开(公告)号：US6049639A
公开(公告)日：2000-04-11
申请号：US995277
申请日：1997-12-19
申请人： Mario J. Paniccia , Valluri R. M. Rao
发明人： Mario J. Paniccia , Valluri R. M. Rao
IPC分类号： G02B6/43 , G02B6/12
CPC分类号： G02B6/43 , H01L25/105 , H01L2924/0002
摘要： A method and an apparatus providing optical input/output in an integrated circuit. In one embodiment, optical modulators and demodulators, which are coupled to integrated circuit input/output nodes, are disposed on or within the back side semiconductor substrate of a flip chip packaged integrated circuit. Since a flip chip packaged integrated circuit die is utilized, full access to the optical modulators and demodulators is provided from the back side of the integrated circuit die for optical input/output. In one embodiment, a heat sink including a light source and an optical assembly is thermally and optically coupled to the back side of the integrated circuit die. A light beam is directed to the optical modulators and the deflected modulated light beam is routed and directed to the optical demodulators to realize optical input/output. In one embodiment, infrared light may be utilized such that the optical modulators and demodulators are disposed within a silicon semiconductor substrate. Since silicon is partially transparent to infrared light, optical input/output is realized through the back side and through the semiconductor substrate of the flip chip packaged integrated circuit die.
摘要翻译：一种在集成电路中提供光输入/输出的方法和装置。在一个实施例中，耦合到集成电路输入/输出节点的光调制器和解调器设置在倒装芯片封装集成电路的背面半导体衬底上或其内部。由于利用了倒装芯片封装的集成电路管芯，所以从用于光输入/输出的集成电路管芯的背面提供对光调制器和解调器的完全访问。在一个实施例中，包括光源和光学组件的散热器被热和光耦合到集成电路管芯的背面。光束被引导到光调制器，并且偏转的调制光束被路由并被引导到光解调器以实现光输入/输出。在一个实施例中，可以利用红外光，使得光学调制器和解调器设置在硅半导体衬底内。由于硅对红外光部分透明，所以通过背面和通过倒装芯片封装的集成电路裸片的半导体衬底实现光输入/输出。

5. 发明授权

US6075908A Method and apparatus for optically modulating light through the back side of an integrated circuit die 失效
标题翻译：通过集成电路管芯的背侧对光进行光学调制的方法和装置
公开(公告)号：US6075908A
公开(公告)日：2000-06-13
申请号：US993786
申请日：1997-12-19
申请人： Mario J. Paniccia , Valluri R. M. Rao , Ian A. Young
发明人： Mario J. Paniccia , Valluri R. M. Rao , Ian A. Young
IPC分类号： G02B6/12 , G02F1/015 , G02F1/21
CPC分类号： G02F1/218 , G02B2006/12107 , G02B2006/12142 , G02F2001/0152 , G02F2201/307
摘要： An optical modulator that modulates light through the semiconductor substrate through the back side of a flip chip packaged integrated circuit. The optical modulator of the present invention enables integrated circuit signals to be extracted through the back side of the semiconductor substrate. In one embodiment, an optical modulator is disposed within a flip chip packaged integrated circuit die. The optical modulator includes a deflector and a diffraction grating. An infrared light beam is directed through the back side of a silicon substrate of the integrated circuit die, deflected off the deflector through the diffraction grating and back out the back side of the integrated circuit die. The diffraction grating modulates the phase of a portion of the deflected light beam in response to an integrated circuit signal. A resulting diffraction interference occurs between the phase modulated portions and non-phase modulated portions of the deflected light beam. The interference causes amplitude modulation of a zero order diffraction of the deflected light beam, from which the integrated circuit signal can be extracted.
摘要翻译：一种光学调制器，其通过倒装芯片封装集成电路的背面来调制通过半导体衬底的光。本发明的光调制器能够通过半导体基板的背面提取集成电路信号。在一个实施例中，光学调制器设置在倒装芯片封装集成电路管芯内。光学调制器包括偏转器和衍射光栅。红外光束被引导通过集成电路管芯的硅衬底的背面，通过衍射光栅偏转偏转器并从集成电路管芯的背面退出。衍射光栅响应于集成电路信号调制偏转光束的一部分的相位。在偏转光束的相位调制部分和非相位调制部分之间产生衍射干涉。干扰引起偏转光束的零级衍射的幅度调制，可从中提取集成电路信号。

6. 发明授权

US06690036B2 Method and apparatus for steering an optical beam in a semiconductor substrate 有权
标题翻译：用于在半导体衬底中转向光束的方法和装置
公开(公告)号：US06690036B2
公开(公告)日：2004-02-10
申请号：US09811171
申请日：2001-03-16
申请人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
发明人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
IPC分类号： H01L2724
CPC分类号： G02B6/122 , G02B6/2813 , G02F1/025 , G02F1/2955 , G02F2001/217
摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.
摘要翻译：一种光学转向方法和装置。在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出MMI设备的多个输出中的每一个光学耦合到MMI设备的输入。相位阵列设置在半导体衬底中。相位阵列包括多个输入和多个输出。光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。

7. 发明授权

US06650802B1 Method and apparatus for switching an optical beam 有权
标题翻译：用于切换光束的方法和装置
公开(公告)号：US06650802B1
公开(公告)日：2003-11-18
申请号：US09470574
申请日：1999-12-22
申请人： Michael T. Morse , Mario J. Paniccia
发明人： Michael T. Morse , Mario J. Paniccia
IPC分类号： G02B626
CPC分类号： G02F1/025 , G02B6/43
摘要： A device for switching an optical beam. In one embodiment, the disclosed optical switching device includes an array of trench capacitors providing a phase array disposed between an optical input port and an optical output port in a semiconductor substrate of an integrated circuit die. In one embodiment, the trench capacitors are biased with control circuitry disposed in the semiconductor substrate on the same integrated circuit die. In one embodiment, the array of trench capacitors are biased by the control circuitry to control a charge distribution in the array to switch an optical beam passing from the optical input port through the array of trench capacitors to the optical output port. In another embodiment, there are a plurality of N optical output ports opposite the optical input port and a phase array is provided by the array of trench capacitors. The array of trench capacitors is biased to control a charge distribution across the phase array. Thus, an incident optical beam from the optical input port is selectively directed to any one of the plurality of N optical output ports. In yet another embodiment, there are a plurality of M optical input ports and corresponding phase arrays opposite the plurality of M optical output ports to provide an M×N optical switch.
摘要翻译：一种用于切换光束的装置。在一个实施例中，所公开的光开关器件包括沟槽电容器阵列，其提供设置在集成电路管芯的半导体衬底中的光输入端口和光输出端口之间的相位阵列。在一个实施例中，沟槽电容器被设置在同一集成电路管芯上的半导体衬底中的控制电路偏压。在一个实施例中，沟槽电容器阵列由控制电路偏置以控制阵列中的电荷分布，以将从光输入端口通过沟槽电容器阵列的光束切换到光输出端口。在另一实施例中，存在与光输入端口相对的多个N个光输出端口，并且由阵列的沟槽电容器提供相位阵列。沟槽电容器阵列被偏置以控制跨越相位阵列的电荷分布。因此，来自光输入端口的入射光束被选择性地导向多个N个光输出端口中的任一个。在又一实施例中，存在多个M个光输入端口和与多个M个光输出端口相对的相应的相位阵列，以提供MxN光开关。

8. 发明授权

US08829566B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08829566B2
公开(公告)日：2014-09-09
申请号：US11724805
申请日：2007-03-15
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0312
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

9. 发明授权

US08338857B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08338857B2
公开(公告)日：2012-12-25
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

10. 发明申请

US20100320502A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 有权
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20100320502A1
公开(公告)日：2010-12-23
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

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