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1. 发明授权

US06690036B2 Method and apparatus for steering an optical beam in a semiconductor substrate 有权
标题翻译：用于在半导体衬底中转向光束的方法和装置
公开(公告)号：US06690036B2
公开(公告)日：2004-02-10
申请号：US09811171
申请日：2001-03-16
申请人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
发明人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
IPC分类号： H01L2724
CPC分类号： G02B6/122 , G02B6/2813 , G02F1/025 , G02F1/2955 , G02F2001/217
摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.
摘要翻译：一种光学转向方法和装置。在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出MMI设备的多个输出中的每一个光学耦合到MMI设备的输入。相位阵列设置在半导体衬底中。相位阵列包括多个输入和多个输出。光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。

2. 发明授权

US06891653B2 Method and apparatus for steering an optical beam in a semiconductor substrate 失效
标题翻译：用于在半导体衬底中转向光束的方法和装置
公开(公告)号：US06891653B2
公开(公告)日：2005-05-10
申请号：US10177872
申请日：2002-06-19
申请人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
发明人： Ansheng Liu , Mario J. Paniccia , Michael T. Morse , Dmitri E. Nikonov , Yi Ding
IPC分类号： G02B6/122 , G02B6/28 , G02F1/025 , G02F1/295
CPC分类号： G02B6/122 , G02B6/2813 , G02F1/025 , G02F1/2955 , G02F2001/217
摘要： An optical steering method and apparatus. In one aspect of the present invention, the disclosed apparatus includes a multi-mode interference (MMI) device disposed in a semiconductor substrate. The MMI device includes an input and a plurality of outputs. Each one of the plurality of outputs of the MMI device is optically coupled to the input of the MMI device. A phase array is disposed in the semiconductor substrate. The phase array includes a plurality of inputs and a plurality of outputs. The plurality of inputs of the phase array optically are coupled to the plurality of outputs of the phase array. The phase array is coupled to control relative phase differences between optical beams output by each one of the plurality of outputs of the phase array.
摘要翻译：一种光学转向方法和装置。在本发明的一个方面，所公开的装置包括设置在半导体衬底中的多模干涉（MMI）装置。 MMI设备包括输入和多个输出。 MMI设备的多个输出中的每一个光耦合到MMI设备的输入。相位阵列设置在半导体衬底中。相位阵列包括多个输入和多个输出。光学上的相位阵列的多个输入耦合到相位阵列的多个输出端。相位阵列被耦合以控制由相位阵列的多个输出中的每一个输出的光束之间的相对相位差。

3. 发明授权

US08829566B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08829566B2
公开(公告)日：2014-09-09
申请号：US11724805
申请日：2007-03-15
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107 , H01L31/18 , H01L31/028 , H01L31/0312
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

4. 发明授权

US08338857B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US08338857B2
公开(公告)日：2012-12-25
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/028 , H01L31/0352
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

5. 发明申请

US20100320502A1 GERMANIUM/SILICON AVALANCHE PHOTODETECTOR WITH SEPARATE ABSORPTION AND MULTIPLICATION REGIONS 有权
标题翻译：具有单独吸收和多样化区域的锗/硅玻璃光电转换器
公开(公告)号：US20100320502A1
公开(公告)日：2010-12-23
申请号：US12870811
申请日：2010-08-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

6. 发明授权

US07233051B2 Germanium/silicon avalanche photodetector with separate absorption and multiplication regions 有权
标题翻译：锗/硅雪崩光电探测器，具有单独的吸收和乘法区域
公开(公告)号：US07233051B2
公开(公告)日：2007-06-19
申请号：US11170556
申请日：2005-06-28
申请人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
发明人： Michael T. Morse , Olufemi I. Dosunmu , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L31/107
CPC分类号： H01L31/1075 , H01L27/14629 , H01L31/028 , H01L31/0312 , H01L31/1812 , Y02E10/547
摘要： A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要翻译：公开了一种基于半导体波导的光接收器。根据本发明的方面的装置包括吸收区域，其包括靠近第二类型的半导体区域的第一类型的半导体区域。第一类型的半导体是吸收第一波长范围内的光并且第二类型的半导体吸收在第二波长范围内的光。倍增区域被定义为接近并与吸收区域分离。乘法区域包括本征半导体区域，其中存在用于乘以在吸收区域中产生的电子的电场。

7. 发明授权

US07116847B2 Method and apparatus for polarization insensitive phase shifting of an optical beam in an optical device 有权
公开(公告)号：US07116847B2
公开(公告)日：2006-10-03
申请号：US11205409
申请日：2005-08-16
申请人： Ansheng Liu , Richard Jones , Mario J. Paniccia , Graham T. Reed
发明人： Ansheng Liu , Richard Jones , Mario J. Paniccia , Graham T. Reed
IPC分类号： G02F1/295
CPC分类号： G02F1/025 , G02F2203/06
摘要： An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.

8. 发明授权

US06788837B2 Method and apparatus for interleaving and switching an optical beam in a semiconductor substrate 有权
标题翻译：用于在半导体衬底中交错和切换光束的方法和装置
公开(公告)号：US06788837B2
公开(公告)日：2004-09-07
申请号：US09819520
申请日：2001-03-27
申请人： Ansheng Liu , Mario J. Paniccia
发明人： Ansheng Liu , Mario J. Paniccia
IPC分类号： G02B626
CPC分类号： G02B6/12007 , G02B6/2813 , G02B6/29352 , G02B6/29386 , H04J14/0208 , H04J14/021
摘要： An optical interleaving switching method and apparatus. In one aspect of the present invention, the disclosed apparatus includes first and second multi-mode interference (MMI) coupling devices disposed in a semiconductor substrate. Each of the first and second MMI coupling devices include first and second inputs and first and second outputs. A first optical coupler having a first optical path length is included. The first output of the first MMI coupling device is optically coupled to the first input of the second MMI coupling device through the first optical coupler. A second optical coupler having a second optical path length is also included. The second output of the first MMI coupling device is optically coupled to the second input of the second MMI coupling device through the second optical coupler. The first optical path length of the first optical coupler is different than the second optical path length of the second optical coupler. In another aspect of the invention, a 2×2 optical switch is optically coupled to the inputs and/or outputs of the first and/or second MMI coupling devices providing multiplexing/demultiplexing and switching functionality for multi-channel optical input and/or output beams.
摘要翻译：一种光交错切换方法和装置。在本发明的一个方面，所公开的设备包括设置在半导体衬底中的第一和第二多模干涉（MMI）耦合器件。第一和第二MMI耦合装置中的每一个包括第一和第二输入以及第一和第二输出。包括具有第一光路长度的第一光耦合器。第一MMI耦合器件的第一输出通过第一光耦合器光耦合到第二MMI耦合器件的第一输入端。还包括具有第二光程长度的第二光耦合器。第一MMI耦合装置的第二输出通过第二光耦合器光耦合到第二MMI耦合装置的第二输入端。第一光耦合器的第一光路长度不同于第二光耦合器的第二光路长度。在本发明的另一方面，2x2光开关光学耦合到第一和/或第二MMI耦合器件的输入和/或输出，为多通道光输入和/或输出光束提供复用/解复用和切换功能。

9. 发明申请

US20110315858A1 OPTICAL RECEIVER ARCHITECTURE USING A MIRRORED SUBSTRATE 有权
标题翻译：使用镜像基板的光接收机架构
公开(公告)号：US20110315858A1
公开(公告)日：2011-12-29
申请号：US12825257
申请日：2010-06-28
申请人： John Heck , Ansheng Liu , Mario J. Paniccia
发明人： John Heck , Ansheng Liu , Mario J. Paniccia
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： G02B6/4214 , G02B6/422
摘要： Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.
摘要翻译：用于提供集成电路管芯组件的反射目标区域的技术和架构。在一个实施例中，模具的反射斜面可允许从模组件的侧表面的方向接收光信号以反射到光电检测器中。在另一个实施例中，模具的联接表面中的一个或多个凹槽提供相应的杠杆点，用于将斜面的目标区域与光电检测器的检测表面对准。

10. 发明授权

US07421200B2 Reduced loss ultra-fast semiconductor modulator and switch 有权
标题翻译：减速超快速半导体调制器和开关
公开(公告)号：US07421200B2
公开(公告)日：2008-09-02
申请号：US11007858
申请日：2004-12-09
申请人： Ansheng Liu , Mario J. Paniccia , Haisheng Rong
发明人： Ansheng Liu , Mario J. Paniccia , Haisheng Rong
IPC分类号： H04J14/00
CPC分类号： H04B10/505 , G02F1/2257 , G02F1/3515 , G02F1/3526
摘要： An optical modulator or switch is disclosed. An apparatus includes an optical splitter disposed in a semiconductor material that splits an optical beam having a first wavelength into first and second portions. The first and second portions of the optical beam are to be directed through first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam to amplify and phase shift the first portion of the optical beam. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.
摘要翻译：公开了一种光调制器或开关。一种装置包括设置在半导体材料中的光分路器，其将具有第一波长的光束分成第一和第二部分。光束的第一和第二部分分别被引导通过第一和第二光波导。第一光波导也被光学耦合以接收泵浦光束以放大和相移光束的第一部分。二极管结构设置在第一光波导中，并且被选择性地偏置以从响应于光波导中的两个光子吸收而产生的第一光波导扫出自由载流子。光耦合器设置在半导体材料中并且光学耦合到第一和第二光波导以组合光束的第一和第二部分。

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