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1. 发明授权

US07361444B1 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 有权
标题翻译：使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法
公开(公告)号：US07361444B1
公开(公告)日：2008-04-22
申请号：US09256034
申请日：1999-02-23
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/023
CPC分类号： G03F7/091 , Y10S430/145
摘要： Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the resist limiting interfacial mixing and contamination of resist by an outgassing product. The bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-ray, e-beam, and ion beam technology.
摘要翻译：公开了包括双层和顶面成像的多层抗蚀剂结构，其利用用作ARC的调谐底层，平坦化层和耐蚀刻硬掩模，其特性如光学，化学和物理性质被定制以产生呈现高分辨率的多层抗蚀剂结构自由光刻及其制备方法。这些下层膜包括其加工条件被控制的基于酚醛清漆的抗蚀剂的组，诸如BARL材料的聚芳基砜，聚羟基苯乙烯基衍生物，作为与含有交联剂的蒽甲醇反应的聚羟基苯乙烯和聚羟基苯乙烯的共聚物的实例，以及酸催化剂（热酸生成剂），聚酰亚胺，聚醚，特别是聚亚芳基醚，聚芳基硫醚，聚碳酸酯如聚芳基碳酸酯，环氧化物，环氧丙烯酸酯，聚亚芳基如聚苯撑，聚亚芳基亚乙烯基如聚亚苯基亚乙烯基，聚乙烯基咔唑，环烯烃和聚酯。这种膜的折射率和消光系数在UV和DUV波长，特别是365,248,293和157nm以及EUV下可调节为约1.4至约2.1和约0.1至约0.6。此外，在本发明中制备的底层膜不与抗蚀剂界面混合和除气产物对抗蚀剂的污染相互作用。双层和TSI抗蚀剂结构可用于248,193,157，EUV，X射线，电子束和离子束技术。

2. 发明授权

US07736833B2 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 失效
标题翻译：使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法
公开(公告)号：US07736833B2
公开(公告)日：2010-06-15
申请号：US11906391
申请日：2007-10-02
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/091 , G03F7/0757 , G03F7/094 , G03F7/405 , Y10S430/145
摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.
摘要翻译：包括双层和顶面成像的多层抗蚀剂结构，其利用调节的作为ARC，平坦化层和耐蚀刻硬质掩模的底层，其特性如光学，化学和物理性质被定制以提供表现出高分辨率，无残留光刻的多层抗蚀剂结构以及制备这些材料的方法。

3. 发明申请

US20080124650A1 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 失效
标题翻译：使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法
公开(公告)号：US20080124650A1
公开(公告)日：2008-05-29
申请号：US11906391
申请日：2007-10-02
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles Latulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles Latulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/004
CPC分类号： G03F7/091 , G03F7/0757 , G03F7/094 , G03F7/405 , Y10S430/145
摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.
摘要翻译：包括双层和顶面成像的多层抗蚀剂结构，其利用调节的作为ARC，平坦化层和耐蚀刻硬质掩模的底层，其特性如光学，化学和物理性质被定制以提供表现出高分辨率，无残留光刻的多层抗蚀剂结构以及制备这些材料的方法。

4. 发明授权

US07709177B2 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 失效
公开(公告)号：US07709177B2
公开(公告)日：2010-05-04
申请号：US11906390
申请日：2007-10-02
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/091 , G03F7/0757 , G03F7/094 , G03F7/405 , Y10S430/145
摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

5. 发明申请

US20080124649A1 Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 失效
公开(公告)号：US20080124649A1
公开(公告)日：2008-05-29
申请号：US11906390
申请日：2007-10-02
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/091 , G03F7/0757 , G03F7/094 , G03F7/405 , Y10S430/145
摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

6. 发明授权

US06344305B1 Radiation sensitive silicon-containing resists 失效
标题翻译：辐射敏感含硅抗蚀剂
公开(公告)号：US06344305B1
公开(公告)日：2002-02-05
申请号：US09654350
申请日：2000-09-01
申请人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
发明人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.
摘要翻译：提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物。一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线，光束和离子束照射。

7. 发明授权

US06187505B1 Radiation sensitive silicon-containing resists 失效
标题翻译：辐射敏感含硅抗蚀剂
公开(公告)号：US06187505B1
公开(公告)日：2001-02-13
申请号：US09241441
申请日：1999-02-02
申请人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
发明人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.
摘要翻译：提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物。一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线，光束和离子束照射。

8. 发明授权

US06821718B2 Radiation sensitive silicon-containing negative resists and use thereof 有权
标题翻译：辐射敏感含硅负极抗蚀剂及其用途
公开(公告)号：US06821718B2
公开(公告)日：2004-11-23
申请号：US10657168
申请日：2003-09-09
申请人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
IPC分类号： G03C500
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/106
摘要： A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.
摘要翻译：负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b）酸敏感性交联剂，和（c）辐射敏感性酸发生剂。抗蚀剂组合物用于在基材中形成图案化的材料层。

9. 发明授权

US6087064A Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method 有权
标题翻译：倍半硅氧烷聚合物，合成方法，光致抗蚀剂组合物和多层平版印刷方法
公开(公告)号：US6087064A
公开(公告)日：2000-07-11
申请号：US146867
申请日：1998-09-03
申请人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
发明人： Qinghuang Lin , Marie Angelopoulos , Ahmad D. Katnani , Ratnam Sooriyakumaran
IPC分类号： G03F7/004 , G03F7/075 , G03C1/725
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/128
摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr.sub.3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.
摘要翻译：通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

10. 发明授权

US06653045B2 Radiation sensitive silicon-containing negative resists and use thereof 有权
标题翻译：辐射敏感含硅负极抗蚀剂及其用途
公开(公告)号：US06653045B2
公开(公告)日：2003-11-25
申请号：US09785609
申请日：2001-02-16
申请人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/106
摘要： A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.
摘要翻译：负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b）酸敏感性交联剂，和（c）辐射敏感性酸发生剂。抗蚀剂组合物用于在基材中形成图案化的材料层。

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