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    • 2. 发明授权
    • Semiconductor memory circuit and method for operating the same in a standby mode
    • 半导体存储器电路及其在待机模式下的操作方法
    • US07356718B2
    • 2008-04-08
    • US11032535
    • 2005-01-10
    • Manfred MenkeEsther Vega-Ordonez
    • Manfred MenkeEsther Vega-Ordonez
    • G06F1/26
    • G11C11/40622G11C5/14G11C11/406G11C11/4074G11C2211/4067
    • A semiconductor memory circuit having a controller by means of which the semiconductor memory circuit can be switched into a standby mode with a reduced power requirement, comprises an analog subcircuit having a power input and a signal output and is characterized by the fact that a switching device for feeding electrical power is connected to the power input and the controller is connected to the switching device in such a way that the switching device can be driven by the controller in such a way that the switching device, in the standby mode, supplies the analog subcircuit with electrical power during a first periodically repeated time duration and does not supply it with electrical power during a second periodically repeated time duration.
    • 一种具有控制器的半导体存储器电路,其中半导体存储器电路可以通过其降低功率需求而切换到待机模式,包括具有电源输入和信号输出的模拟子电路,其特征在于开关器件 用于供电的电力被连接到电力输入端,并且控制器以这样的方式连接到开关装置,使得开关装置可以由控制器驱动,使得处于待机模式的开关装置提供模拟 在第一周期性重复持续时间期间具有电力的分支电路,并且在第二周期性重复持续时间期间不提供电力。
    • 4. 发明授权
    • Pseudostatic memory circuit
    • 伪静态存储器电路
    • US06909657B2
    • 2005-06-21
    • US10675433
    • 2003-09-30
    • Andreas JakobsThomas JanikManfred MenkeEckehard Plättner
    • Andreas JakobsThomas JanikManfred MenkeEckehard Plättner
    • G11C11/406G11C7/00
    • G11C11/40603G11C11/406G11C11/40611
    • A psuedostatic memory circuit is selected by a memory selection signal. A control circuit, in a first operating mode, carries out a refresh of the memory area at a refresh address after reception of the refresh request signal by generation of a refresh signal if the memory circuit is deselected or if, in the event of selection of the memory circuit by the memory selection signal, the access to the memory area is ended before the generation of a further refresh request signal. The control circuit, in a second operating mode, interrupts an access to the memory area for the writing and read-out of data and carries out a refresh of the memory area by generation of a refresh signal if the memory circuit is selected and a further refresh request signal is received before the ending of the access to the memory area.
    • 通过存储器选择信号选择伪静态存储器电路。 如果取消选择存储器电路,则在第一操作模式中的控制电路在接收到刷新请求信号之后的刷新地址处刷新存储器区域,或者如果在选择 通过存储器选择信号的存储器电路,在生成另外的刷新请求信号之前结束对存储器区域的访问。 在第二操作模式中,控制电路中断对存储器区域的访问以便写入和读出数据,并且如果选择了存储器电路,则通过产生刷新信号来进行存储区域的刷新 在访问存储器区域的结束之前接收到刷新请求信号。
    • 5. 发明授权
    • Integrated charge pump
    • 集成电荷泵
    • US07323927B2
    • 2008-01-29
    • US11318059
    • 2005-12-19
    • Manfred Menke
    • Manfred Menke
    • G05F1/10
    • H02M3/07
    • An integrated charge pump is provided, comprising: a pump capacitor having a first terminal and a second terminal; a control unit, which operates the charge pump in an alternation between a first phase and a second phase; a first switching device in order to charge the pump capacitor with a pump voltage in the first phase; a second switching device in order to pull the potential of the first terminal to a predetermined potential in the second phase, and in order to connect the second terminal of the pump capacitor to an output node, the second switching device having a first transistor in order to connect the second terminal of the pump capacitor to the output node, a substrate terminal of the first transistor being fixedly connected to the output node; and the second switching device pulling the first terminal to the predetermined potential with a gradient, the gradient being chosen such that at no point in time is a diode breakdown voltage exceeded in the first transistor.
    • 提供了一种集成电荷泵,包括:具有第一端子和第二端子的泵电容器; 控制单元,其在第一阶段和第二阶段之间交替地操作所述电荷泵; 第一开关装置,用于在第一相中以泵浦电压对泵电容器充电; 第二开关装置,以便将第一端子的电位拉到第二相中的预定电位,并且为了将泵电容器的第二端子连接到输出节点,第二开关装置按顺序具有第一晶体管 将泵电容器的第二端子连接到输出节点,第一晶体管的基板端子固定地连接到输出节点; 并且所述第二开关器件以梯度将所述第一端子拉到所述预定电位,所述梯度被选择为使得在任何时间点都不是在所述第一晶体管中超过二极管击穿电压。
    • 6. 发明授权
    • Charge pump
    • 电荷泵
    • US5546296A
    • 1996-08-13
    • US279919
    • 1994-07-25
    • Dominique SavignacDieter GleisManfred Menke
    • Dominique SavignacDieter GleisManfred Menke
    • G11C11/407G11C5/14H02M3/07H03K19/00
    • G11C5/145H02M3/073
    • A charge pump assembly includes a storage capacitor having one terminal for a first supply potential and another terminal for pickup of an output potential. The assembly has one charge pump or two charge pumps being controlled by push-pull signals. Each charge pump includes a p-channel MOS transistor having a gate terminal being controlled by a first signal and having a drain-to-source path with one terminal being connected to the other terminal of the storage capacitor. A sliding capacitor has one terminal being connected to the other terminal of the drain-to-source path of the p-channel MOS transistor and another terminal being controlled by a second signal. An n-channel MOS transistor has a gate terminal being controlled by a third signal and a drain-to-source path being connected between a second supply potential and the one terminal of the sliding capacitor. A pulse shaper device is supplied by an oscillator device for generating the signals, in such a way that the p-channel MOS transistor is conducting only whenever the second signal is at a high level, and the n-channel MOS transistor is conducting only whenever the second signal is at a low level.
    • 电荷泵组件包括具有用于第一电源电位的一个端子和用于拾取输出电位的另一端子的存储电容器。 该组件具有一个电荷泵或两个电荷泵由推挽信号控制。 每个电荷泵包括一个p沟道MOS晶体管,其栅极端子由第一个信号控制,并具有一个漏极到源极通路,一个端子连接到存储电容器的另一个端子。 滑动电容器具有一个端子连接到p沟道MOS晶体管的漏极 - 源极通路的另一个端子,另一个端子由第二个信号控制。 n沟道MOS晶体管的栅极端子由第三信号控制,漏极 - 源极路径连接在第二电源电位和滑动电容器的一个端子之间。 脉冲整形器由用于产生信号的振荡器提供,使得只有当第二信号处于高电平时,p沟道MOS晶体管才导通,并且n沟道MOS晶体管仅在 第二信号处于低电平。
    • 9. 发明申请
    • DENTAL IMPLANT FOR SUPPORTING A DENTAL PROSTHESIS
    • 用于支持牙齿假体的牙科植入物
    • US20080113316A1
    • 2008-05-15
    • US11876892
    • 2007-10-23
    • Manfred Menke
    • Manfred Menke
    • A61C8/00
    • A61C8/0022A61C8/0018A61C8/005A61C8/006
    • Dental implant (10) for supporting a dental prosthesis on a jaw bone, is equipped with a main body (12), which comprises a securing portion (14) intended to be anchored in the bone tissue and, lying opposite it, a head portion (16). The head portion (16) protrudes radially beyond the securing portion (14) with respect to the longitudinal axis of the main body (12) to form a support face (26), in such a way that, in the state of insertion in the jaw bone, the pressure of the dental implant (10) on the jaw bone is reduced, and a sinking movement of the dental implant (10) into the jaw bone is effectively avoided, even over quite long periods of time.
    • 用于支撑颌骨上的牙科假体的牙种植体(10)装备有主体(12),该主体包括一个固定部分(14),该固定部分将被锚固在骨组织中,并且与其相对置, (16)。 头部(16)相对于主体(12)的纵向轴线径向突出超过固定部分(14)以形成支撑面(26),使得在插入到主体 颌骨上的牙植入物(10)的压力减小,并且即使在相当长的时间段内也能有效地避免牙植入物(10)进入颚骨的下沉运动。
    • 10. 发明申请
    • Integrated circuit and method for generating a ready signal
    • 用于产生就绪信号的集成电路和方法
    • US20050179477A1
    • 2005-08-18
    • US11032536
    • 2005-01-10
    • Manfred Menke
    • Manfred Menke
    • G01R19/165H01L23/58H03K17/22H03L7/00
    • H03K17/22G01R19/16552
    • An integrated circuit comprises an input for receiving a supply voltage, a field-effect transistor with a gate which is connected to the input in such a manner that the gate voltage present at the gate is a function of the supply voltage, a voltage source for generating a reference voltage which is connected to the input for receiving the supply voltage, a device for determining whether the gate voltage of the field effect transistor exceeds a turn-on voltage of the field-effect transistor, and a device for generating a ready signal which indicates that the supply voltage is high enough for performing functions of the integrated circuit, the device for generating being constructed for generating the ready signal when the gate voltage of the field-effect transistor exceeds the turn-on voltage of the field-effect transistor. The integrated circuit is characterized by the fact that a device for detecting the reference voltage generated by the voltage source is provided and the device for generating the ready signal is also constructed for generating the ready signal only when the reference voltage lies within a predetermined interval.
    • 集成电路包括用于接收电源电压的输入端,具有栅极的场效应晶体管,栅极连接到输入端,使得存在于栅极的栅极电压是电源电压的函数;电压源, 产生连接到用于接收电源电压的输入的参考电压,用于确定场效应晶体管的栅极电压是否超过场效应晶体管的接通电压的装置,以及用于产生就绪信号的装置 其指示电源电压足够高以用于执行集成电路的功能,当场效应晶体管的栅极电压超过场效应晶体管的接通电压时,用于产生的器件被构造用于产生就绪信号 。 集成电路的特征在于,提供用于检测由电压源产生的参考电压的装置,并且用于产生就绪信号的装置也被构造用于仅在参考电压处于预定间隔内时才产生就绪信号。