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1. 发明授权

US06716643B1 Method for producing a semiconductor memory element 有权
标题翻译：半导体存储元件的制造方法
公开(公告)号：US06716643B1
公开(公告)日：2004-04-06
申请号：US10048192
申请日：2002-06-03
申请人： Manfred Engelhardt , Volker Weinrich
发明人： Manfred Engelhardt , Volker Weinrich
IPC分类号： H01G706
CPC分类号： H01L27/10852 , H01L21/31144 , H01L28/55
摘要： A method for fabricating a contact hole for a semiconductor memory element. The memory element includes a silicon substrate, an intermediate dielectric layer on the substrate, and an upper layer on the intermediate dielectric layer. The method includes forming a perforated mask on the upper layer, the mask including a material that exhibits temperature stability. The upper layer and a depression are etched into the intermediate dielectric layer as far as a residual thickness using the perforated mask. A layer including O3/TEOS-SiO2 is deposited onto a structure thus obtained. The layer including O3/TEOS-SiO2 is removed from a bottom of the depression by etching. The depression is lowered by etching to produce the contact hole as far as an interface with the silicon substrate, the silicon substrate being uncovered, and the layer including O3/TEOS-SiO2 serving as a lateral seal of the upper layer during the lowering of the depression.
摘要翻译：一种用于制造用于半导体存储元件的接触孔的方法。存储元件包括硅衬底，衬底上的中间电介质层和中间电介质层上的上层。该方法包括在上层上形成穿孔掩模，该掩模包括表现出温度稳定性的材料。使用穿孔掩模将上层和凹陷蚀刻到中间介电层中至达残留厚度。将包含O 3 / TEOS-SiO 2的层沉积到由此获得的结构上。通过蚀刻从凹陷的底部除去包含O 3 / TEOS-SiO 2的层。通过蚀刻降低凹陷以产生接触孔，直到与硅衬底的界面，硅衬底未被覆盖，并且包含O 3 / TEOS-SiO 2的层在下降期间作为上层的侧向密封萧条。

2. 发明授权

US06210595B1 Method for producing structures having a high aspect ratio and structure having a high aspect ratio 有权
标题翻译：具有高纵横比和高纵横比的结构的结构的制造方法
公开(公告)号：US06210595B1
公开(公告)日：2001-04-03
申请号：US09149829
申请日：1998-09-08
申请人： Volker Weinrich , Manfred Engelhardt
发明人： Volker Weinrich , Manfred Engelhardt
IPC分类号： C23F100
CPC分类号： H01L27/10852 , C23F4/00 , H01L21/0335 , H01L21/32139 , H01L28/55 , H01L28/91
摘要： A method for producing structures having a high aspect ratio includes the following steps: a material of the structure to be produced is provided in the form of a layer, a mask is applied to the layer, the layer is subjected to dry etching using the mask, thereby forming redepositions of the layer material on side walls of the mask and the mask is removed, so that a structure having a high aspect ratio is left behind. The method enables very high (≧1 &mgr;m) and very thin (≦50 nm) structures to be produced in a relatively simple and rapid manner in only very few process steps and with only one mask technique. Structures having such large aspect ratios, particularly when they are composed of a conductive material, cannot be produced, or can be produced only with a high outlay, by using other methods.
摘要翻译：具有高纵横比的结构的制造方法包括以下步骤：以层的形式提供要制造的结构材料，将掩模施加到该层上，使用掩模进行干蚀刻，从而在掩模的侧壁上形成层材料的再沉积，并且去除掩模，使得留下具有高纵横比的结构。该方法使得非常高（> = 1mum）和非常薄（<= 50nm）的结构以相对简单和快速的方式仅在非常少的工艺步骤中产生，并且仅使用一种掩模技术。具有这样大的纵横比的结构，特别是当它们由导电材料组成时，不能通过使用其它方法产生，或者仅通过高成本制造。

3. 发明授权

US06454956B1 Structuring method 有权
标题翻译：结构方法
公开(公告)号：US06454956B1
公开(公告)日：2002-09-24
申请号：US09128389
申请日：1998-08-03
申请人： Manfred Engelhardt , Volker Weinrich
发明人： Manfred Engelhardt , Volker Weinrich
IPC分类号： B08B104
CPC分类号： H01L21/02052 , H01L21/0274 , H01L21/31053 , H01L21/31122 , H01L21/31144 , H01L21/32139 , H01L28/55 , H01L28/60 , Y10S438/959 , Y10S438/963
摘要： A method for structuring at least one layer to be structured. First, a mask is applied to the layer and the layer is structured using the mask. After the structuring step, the mask is then removed, while leaving behind redepositions of the material of the layer. The redepositions of the material of the layer are removed by mechanical polishing or chemical-mechanical polishing.
摘要翻译：一种用于构造至少一层待构造层的方法。首先，将掩模应用于层，并且使用掩模来构造层。在结构化步骤之后，然后去除掩模，同时留下层的材料的再沉积。通过机械抛光或化学机械抛光去除层的材料的再沉积。

4. 发明授权

US07045070B1 Method of producing an electrode configuration and method of electrically contacting the electrode configuration 失效
标题翻译：制造电极结构的方法和电接触电极结构的方法
公开(公告)号：US07045070B1
公开(公告)日：2006-05-16
申请号：US09645807
申请日：2000-08-24
申请人： Volker Weinrich , Manfred Engelhardt , Werner Pamler , Hermann Wendt
发明人： Volker Weinrich , Manfred Engelhardt , Werner Pamler , Hermann Wendt
IPC分类号： H01B13/00 , H01L21/00
CPC分类号： H01L28/60 , H01L21/32136 , H01L21/32139
摘要： The electrode configuration includes at least one structured layer. A mask is produced on the layer to be structured and the layer is dry etched. The mask is at least slightly etchable by dry etching. The mask contains a metal silicide, a metal nitride or a metal oxide.
摘要翻译：电极配置包括至少一个结构化层。在待结构的层上产生掩模，并且该层被干蚀刻。该掩模至少可通过干蚀刻轻微刻蚀。掩模包含金属硅化物，金属氮化物或金属氧化物。

5. 发明授权

US06730562B2 Method of patterning ferroelectric layers 失效
标题翻译：铁电层图案的方法
公开(公告)号：US06730562B2
公开(公告)日：2004-05-04
申请号：US10364819
申请日：2003-02-11
申请人： Manfred Engelhardt , Walter Hartner , Frank Hintermaier , Günther Schindler , Volker Weinrich
发明人： Manfred Engelhardt , Walter Hartner , Frank Hintermaier , Günther Schindler , Volker Weinrich
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L21/31122
摘要： A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×106 V/m without a significant leakage current.
摘要翻译：用于在半导体衬底上构造铁电层的方法保留或再生强电介质层的粘附和耐击穿电压，这对于在大规模集成的FeRAM和DRAM存储器组件中产生存储电容器尤其重要。 H 2 O或O 2的添加主要导致铁电层的静电击穿强度的恢复，特别是当铁电体用作储能电容器的电介质并且必须承受5-10×10 6的电场时，这尤其重要 > V / m，没有明显的漏电流。

6. 发明授权

US06566220B2 Method for fabricating a semiconductor memory component 有权
公开(公告)号：US06566220B2
公开(公告)日：2003-05-20
申请号：US10013234
申请日：2001-12-10
申请人： Manfred Engelhardt , Volker Weinrich , Franz Kreupl , Manuela Schiele
发明人： Manfred Engelhardt , Volker Weinrich , Franz Kreupl , Manuela Schiele
IPC分类号： H01L2992
CPC分类号： H01L28/75 , H01L27/10852 , H01L28/55
摘要： The invention relates to a method for fabricating a semiconductor memory component, in particular a DRAM or FeRAM having a silicon substrate. The lower electrode of a storage capacitor is insulated from the silicon substrate by a barrier layer. The barrier layer is patterned using a hard mask, in particular, made from SiO2, SiN, SiON, before the storage capacitor is applied, and the mask layer which remains after the patterning is removed so as to uncover the patterned barrier layer. The invention provides for the patterned barrier layer to be embedded in SiO2 by means of CVD (chemical vapor deposition) prior to the removal of the remaining mask layer, and for the remaining mask layer, together with the SiO2 embedding, to be removed from the surface of the barrier layer using an SiO2-CMP (chemical mechanical polishing) process.

7. 发明授权

US06315913B1 Structuring method 有权
标题翻译：结构方法
公开(公告)号：US06315913B1
公开(公告)日：2001-11-13
申请号：US09146636
申请日：1998-09-03
申请人： Manfred Engelhardt , Volker Weinrich
发明人： Manfred Engelhardt , Volker Weinrich
IPC分类号： B01J1910
CPC分类号： H01L21/02071 , H01L21/31122 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A method for structuring at least one layer to be structured. Initially, a mask is applied to the layer and the layer is structured using the mask. After the structuring step, the mask is then removed, while leaving behind redepositions of the material of the layer. The redepositions of the material of the layer are then removed by sound action.
摘要翻译：一种用于构造至少一层待构造层的方法。最初，将掩模应用于该层，并且使用掩模来构造该层。在结构化步骤之后，然后去除掩模，同时留下层的材料的再沉积。然后通过声音动作去除层的材料的再沉积。

8. 发明授权

US06296777B1 Structuring process 有权
标题翻译：结构过程
公开(公告)号：US06296777B1
公开(公告)日：2001-10-02
申请号：US09128388
申请日：1998-08-03
申请人： Manfred Engelhardt , Volker Weinrich
发明人： Manfred Engelhardt , Volker Weinrich
IPC分类号： C23F102
CPC分类号： H01L21/31144 , H01L21/32139
摘要： A layer is structured by first applying a sacrificial layer on the layer to be structured, forming a mask with an inorganic material on the sacrificial layer, then patterning the sacrificial layer and the layer to be structured through the mask, and, finally, removing the sacrificial layer and the mask.
摘要翻译：通过首先在待结构的层上施加牺牲层，在牺牲层上形成具有无机材料的掩模，然后通过掩模对牺牲层和待结构的层进行图案化，并最终去除牺牲层和面具。

9. 发明授权

US08877631B2 Interconnect arrangement and associated production methods 有权
标题翻译：互连安排和相关生产方式
公开(公告)号：US08877631B2
公开(公告)日：2014-11-04
申请号：US13110022
申请日：2011-05-18
申请人： Manfred Engelhardt , Werner Pamler , Guenther Schindler
发明人： Manfred Engelhardt , Werner Pamler , Guenther Schindler
IPC分类号： H01L21/4763 , H01L23/522 , H01L23/532 , H01L21/768 , H01L27/108
CPC分类号： H01L21/7681 , H01L21/7682 , H01L23/5222 , H01L23/53295 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： An interconnect arrangement and fabrication method are described. The interconnect arrangement includes an electrically conductive mount substrate, a dielectric layer formed on the mount substrate, and an electrically conductive interconnect formed on the dielectric layer. At least a portion of the dielectric layer under the interconnect contains a cavity. To fabricate the interconnect arrangement, a sacrificial layer is formed on the mount substrate and the interconnect layer is formed on the sacrificial layer. The interconnect layer and the sacrificial layer are structured to produce a structured interconnect on the structured sacrificial layer. A porous dielectric layer is formed on a surface of the mount substrate and of the structured interconnect as well as the sacrificial layer. The sacrificial layer is then removed to form the cavity under the interconnect.
摘要翻译：描述了互连装置和制造方法。互连装置包括导电安装基板，形成在安装基板上的电介质层和形成在电介质层上的导电布线。互连下方的电介质层的至少一部分包含空腔。为了制造互连布置，在安装基板上形成牺牲层，并且在牺牲层上形成互连层。互连层和牺牲层被构造成在结构化牺牲层上产生结构化互连。在安装基板和结构化互连的表面以及牺牲层上形成多孔电介质层。然后去除牺牲层以在互连下形成空腔。

10. 发明授权

US08722514B2 Semiconductor devices having insulating substrates and methods of formation thereof 有权
标题翻译：具有绝缘基板的半导体器件及其形成方法
公开(公告)号：US08722514B2
公开(公告)日：2014-05-13
申请号：US13007892
申请日：2011-01-17
申请人： Carsten von Koblinski , Volker Strutz , Manfred Engelhardt
发明人： Carsten von Koblinski , Volker Strutz , Manfred Engelhardt
IPC分类号： H01L21/30 , H01L21/46 , H01L23/31
CPC分类号： H01L43/14 , H01L21/78 , H01L21/84 , H01L23/3121 , H01L23/3171 , H01L23/3178 , H01L23/3185 , H01L24/06 , H01L27/12 , H01L27/22 , H01L43/04 , H01L43/065 , H01L43/12 , H01L2224/04042 , H01L2224/05553 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15788 , H01L2924/181 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.
摘要翻译：在一个实施例中，半导体器件包括玻璃衬底，设置在玻璃衬底上的半导体衬底和设置在半导体衬底内和/或之上的磁传感器。

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